Write Amplification Reduction in Flash-Based SSDs Through Extent-Based Temperature Identification

Abstract We apply an extent-based clustering technique to the problem of identifying "hot" or frequently-written data in an SSD, allowing such data to be segregated for improved cleaning performance. We implement and evaluate this technology in simulation, using a page-mapped FTL with Greedy cleaning and separate hot and cold write frontiers. We compare it with two recently proposed hot data identification algorithms, Multiple Hash Functions and Multiple Bloom Filters, keeping the remainder of the FTL / cleaning algorithm unchanged. In almost all cases write amplification was lower with the extent-based algorithm; although in some cases the improvement was modest, in others it was as much as 20%. These gains are achieved with very small amounts of memory, e.g. roughly 10 KB for the implementation tested, an important factor for SSDs where most DRAM is dedicated to address maps and data buffers

A Survey on the Integration of NAND Flash Storage in the Design of File Systems and the Host Storage Software Stack

With the ever-increasing amount of data generate in the world, estimated to reach over 200 Zettabytes by 2025, pressure on efficient data storage systems is intensifying. The shift from HDD to flash-based SSD provides one of the most fundamental shifts in storage technology, increasing performance capabilities significantly. However, flash storage comes with different characteristics than prior HDD storage technology. Therefore, storage software was unsuitable for leveraging the capabilities of flash storage. As a result, a plethora of storage applications have been design to better integrate with flash storage and align with flash characteristics. In this literature study we evaluate the effect the introduction of flash storage has had on the design of file systems, which providing one of the most essential mechanisms for managing persistent storage. We analyze the mechanisms for effectively managing flash storage, managing overheads of introduced design requirements, and leverage the capabilities of flash storage. Numerous methods have been adopted in file systems, however prominently revolve around similar design decisions, adhering to the flash hardware constrains, and limiting software intervention. Future design of storage software remains prominent with the constant growth in flash-based storage devices and interfaces, providing an increasing possibility to enhance flash integration in the host storage software stack

A Survey on the Integration of NAND Flash Storage in the Design of File Systems and the Host Storage Software Stack

With the ever-increasing amount of data generate in the world, estimated to reach over 200 Zettabytes by 2025, pressure on efficient data storage systems is intensifying. The shift from HDD to flash-based SSD provides one of the most fundamental shifts in storage technology, increasing performance capabilities significantly. However, flash storage comes with different characteristics than prior HDD storage technology. Therefore, storage software was unsuitable for leveraging the capabilities of flash storage. As a result, a plethora of storage applications have been design to better integrate with flash storage and align with flash characteristics. In this literature study we evaluate the effect the introduction of flash storage has had on the design of file systems, which providing one of the most essential mechanisms for managing persistent storage. We analyze the mechanisms for effectively managing flash storage, managing overheads of introduced design requirements, and leverage the capabilities of flash storage. Numerous methods have been adopted in file systems, however prominently revolve around similar design decisions, adhering to the flash hardware constrains, and limiting software intervention. Future design of storage software remains prominent with the constant growth in flash-based storage devices and interfaces, providing an increasing possibility to enhance flash integration in the host storage software stack

낸드 플래시 기반 저장장치의 수명 향상을 위한 계층 교차 최적화 기법

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 2. 김지홍.Replacing HDDs with NAND flash-based storage devices (SSDs) has been one of the major challenges in modern computing systems especially in regards to better performance and higher mobility. Although uninterrupted semiconductor process scaling and multi-leveling techniques lower the price of SSDs to the comparable level of HDDs, the decreasing lifetime of NAND flash memory, as a side effect of recent advanced device technologies, is emerging as one of the major barriers to the wide adoption of SSDs in high-performance computing systems. In this dissertation, we propose new cross-layer optimization techniques to extend the lifetime (in particular, endurance) of NAND flash memory. Our techniques are motivated by our key observation that erasing a NAND block with a lower voltage or at a slower speed can significantly improve NAND endurance. However, using a lower voltage in erase operations causes adverse side effects on other NAND characteristics such as write performance and retention capability. The main goal of the proposed techniques is to improve NAND endurance without affecting the other NAND requirements. We first present Dynamic Erase Voltage and Time Scaling (DeVTS), a unified framework to enable a system software to exploit the tradeoff relationship between the endurance and erase voltages/times of NAND flash memory. DeVTS includes erase voltage/time scaling and write capability tuning, each of which brings a different impact on the endurance, performance, and retention capabilities of NAND flash memory. Second, we propose a lifetime improvement technique which takes advantage of idle times between write requests when erasing a NAND block with a slower speed or when writing data to a NAND block erased with a lower voltage. We have implemented a DeVTS-enabled FTL, called dvsFTL, which optimally adjusts the erase voltage/time and write performance of NAND devices in an automatic fashion. Our experimental results show that dvsFTL can improve NAND endurance by 62%, on average, over DeVTS-unaware FTL with a negligible decrease in the overall write performance. Third, we suggest a comprehensive lifetime improvement technique which exploits variations of the retention requirements as well as the performance requirement of SSDs when writing data to a NAND block erased with a lower voltage. We have implemented dvsFTL+, an extended version of dvsFTL, which fully utilizes DeVTS by accurately predicting the write performance and retention requirements during run times. Our experimental results show that dvsFTL+ can further improve NAND endurance by more than 50% over dvsFTL while preserving all the NAND requirements. Lastly, we present a reliability management technique which prevents retention failure problems when aggressive retention-capability tuning techniques are employed in real environments. Our measurement results show that the proposed technique can recover corrupted data from retention failures up to 23 times faster over existing data recovery techniques. Furthermore, it can successfully recover severely retention-failed data, such as ones experienced 8 times longer retention times than the retention-time specification, that were not recoverable with the existing technique. Based on the evaluation studies for the developed lifetime improvement techniques, we verified that the cross-layer optimization approach has a significant impact on extending the lifetime of NAND flash-based storage devices. We expect that our proposed techniques can positively contribute to not only the wide adoption of NAND flash memory in datacenter environments but also the gradual acceleration of using flash as main memory.Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Dissertation Goals 3 1.3 Contributions 4 1.4 Dissertation Structure 5 Chapter 2 Background 7 2.1 Threshold Voltage Window of NAND Flash Memory 7 2.2 NAND Program Operation 10 2.3 Related Work 11 2.3.1 System-Level SSD Lifetime Improvement Techniques 12 2.3.2 Device-Level Endurance-Enhancing Technique 15 2.3.3 Cross-Layer Optimization Techniques Exploiting NAND Tradeoffs 17 Chapter 3 Dynamic Erase Voltage and Time Scaling 20 3.1 Erase Voltage and Time Scaling 22 3.1.1 Motivation 22 3.1.2 Erase Voltage Scaling 23 3.1.3 Erase Time Scaling 26 3.2 Write Capability Tuning 28 3.2.1 Write Performance Tuning 29 3.2.2 Retention Capability Tuning 30 3.2.3 Disturbance Resistance Tuning 33 3.3 NAND Endurance Model 34 Chapter 4 Lifetime Improvement Technique Using Write-Performance Tuning 39 4.1 Design and Implementation of dvsFTL 40 4.1.1 Overview 40 4.1.2 Write-Speed Mode Selection 41 4.1.3 Erase Voltage Mode Selection 44 4.1.4 Erase Speed Mode Selection 46 4.1.5 DeVTS-wPT Aware FTL Modules 47 4.2 Experimental Results 50 4.2.1 Experimental Settings 50 4.2.2 Workload Characteristics 53 4.2.3 Endurance Gain Analysis 54 4.2.4 Overall Write Throughput Analysis 56 4.2.5 Detailed Analysis 58 Chapter 5 Lifetime Improvement Technique Using Retention-Capability Tuning 60 5.1 Design and Implementation of dvsFTL+ 62 5.1.1 Overview 62 5.1.2 Retention Requirement Prediction 64 5.1.3 Maximization of Endurance Benefit 66 5.1.4 Minimization of Reclaim Overhead 68 5.2 Experimental Results 69 5.2.1 Experimental Settings 69 5.2.2 Workload Characteristics 70 5.2.3 Endurance Gain Analysis 72 5.2.4 NAND Requirements Analysis 73 5.2.5 Detailed Analysis of Retention-Time Predictor 76 5.2.6 Detailed Analysis of Endurance Gain 83 Chapter 6 Reliability Management Technique for NAND Flash Memory 87 6.1 Overview 89 6.2 Motivation 91 6.2.1 Limitations of the Existing Retention-Error Management Policy 91 6.2.2 Limitations of the Existing Retention-Failure Recovery Technique 92 6.3 Retention Error Recovery Technique 95 6.3.1 Charge Movement Model 95 6.3.2 A Selective Error-Correction Procedure 99 6.3.3 Implementation 100 6.4 Experimental Results 103 Chapter 7 Conclusions 108 7.1 Summary and Conclusions 108 7.2 Future Work 110 7.2.1 Lifetime Improvement Technique Exploiting The Other NAND Tradeoffs 110 7.2.2 Development of Extended Techniques for DRAM-Flash Hybrid Main Memory Systems 111 7.2.3 Development of Specialized SSDs 112 Bibliography 114 초 록 122Docto

Improving Reliability and Performance of NAND Flash Based Storage System

High seek and rotation overhead of magnetic hard disk drive (HDD) motivates development of storage devices, which can offer good random performance. As an alternative technology, NAND flash memory demonstrates low power consumption, microsecond-order access latency and good scalability. Thanks to these advantages, NAND flash based solid state disks (SSD) show many promising applications in enterprise servers. With multi-level cell (MLC) technique, the per-bit fabrication cost is reduced and low production cost enables NAND flash memory to extend its application to the consumer electronics. Despite these advantages, limited memory endurance, long data protection latency and write amplification continue to be the major challenges in the designs of NAND flash storage systems. The limited memory endurance and long data protection latency issue derive from memory bit errors. High bit error rate (BER) severely impairs data integrity and reduces memory durance. The limited endurance is a major obstacle to apply NAND flash memory to the application with high reliability requirement. To protect data integrity, hard-decision error correction codes (ECC) such as Bose-Chaudhuri-Hocquenghem (BCH) are employed. However, the hardware cost becomes prohibitively with the increase of BER when the BCH ECC is employed to extend system lifetime. To extend system lifespan without high hardware cost, we has proposed data pattern aware (DPA) error prevention system design. DPA realizes BER reduction by minimizing the occurrence of data patterns vulnerable to high BER with simple linear feedback shift register circuits. Experimental results show that DPA can increase the system lifetime by up to 4× with marginal hardware cost. With the technology node scaling down to 2Xnm, BER increases up to 0.01. Hard-decision ECCs and DPA are no longer applicable to guarantee data integrity due to either prohibitively high hardware cost or high storage overhead. Soft-decision ECC, such as lowdensity parity check (LDPC) code, has been introduced to provide more powerful error correction capability. However, LDPC code demands extra memory sensing operations, directly leading to long read latency. To reduce LDPC code induced read latency without adverse impact on system reliability, we has proposed FlexLevel NAND flash storage system design. The FlexLevel design reduces BER by broadening the noise margin via threshold voltage (Vth) level reduction. Under relatively low BER, no extra sensing level is required and therefore read performance can be improved. To balance Vth level reduction induced capacity loss and the read speedup, the FlexLevel design identifies the data with high LDPC overhead and only performs Vth reduction to these data. Experimental results show that compared with the best existing works, the proposed design achieves up to 11% read speedup with negligible capacity loss. Write amplification is a major cause to performance and endurance degradation of the NAND flash based storage system. In the object-based NAND flash device (ONFD), write amplification partially results from onode partial update and cascading update. Onode partial update only over-writes partial data of a NAND flash page and incurs unnecessary data migration of the un-updated data. Cascading update is update to object metadata in a cascading manner due to object data update or migration. Even through only several bytes in the object metadata are updated, one or more page has to be re-written, significantly degrading write performance. To minimize write operations incurred by onode partial update and cascading update, we has proposed a Data Migration Minimizing (DMM) device design. The DMM device incorporates 1) the multi-level garbage collection technique to minimize the unnecessary data migration of onode partial update and 2) the virtual B+ tree and diff cache to reduce the write operations incurred by cascading update. The experiment results demonstrate that the DMM device can offer up to 20% write reduction compared with the best state-of-art works

High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

Improving Data Management and Data Movement Efficiency in Hybrid Storage Systems

University of Minnesota Ph.D. dissertation.July 2017. Major: Computer Science. Advisor: David Du. 1 computer file (PDF); ix, 116 pages.In the big data era, large volumes of data being continuously generated drive the emergence of high performance large capacity storage systems. To reduce the total cost of ownership, storage systems are built in a more composite way with many different types of emerging storage technologies/devices including Storage Class Memory (SCM), Solid State Drives (SSD), Shingle Magnetic Recording (SMR), Hard Disk Drives (HDD), and even across off-premise cloud storage. To make better utilization of each type of storage, industries have provided multi-tier storage through dynamically placing hot data in the faster tiers and cold data in the slower tiers. Data movement happens between devices on one single device and as well as between devices connected via various networks. Toward improving data management and data movement efficiency in such hybrid storage systems, this work makes the following contributions: To bridge the giant semantic gap between applications and modern storage systems, passing a piece of tiny and useful information (I/O access hints) from upper layers to the block storage layer may greatly improve application performance or ease data management in heterogeneous storage systems. We present and develop a generic and flexible framework, called HintStor, to execute and evaluate various I/O access hints on heterogeneous storage systems with minor modifications to the kernel and applications. The design of HintStor contains a new application/user level interface, a file system plugin and a block storage data manager. With HintStor, storage systems composed of various storage devices can perform pre-devised data placement, space reallocation and data migration polices assisted by the added access hints. Each storage device/technology has its own unique price-performance tradeoffs and idiosyncrasies with respect to workload characteristics they prefer to support. To explore the internal access patterns and thus efficiently place data on storage systems with fully connected (i.e., data can move from one device to any other device instead of moving tier by tier) differential pools (each pool consists of storage devices of a particular type), we propose a chunk-level storage-aware workload analyzer framework, simplified as ChewAnalyzer. With ChewAnalzyer, the storage manager can adequately distribute and move the data chunks across different storage pools. To reduce the duplicate content transferred between local storage devices and devices in remote data centers, an inline Network Redundancy Elimination (NRE) process with Content-Defined Chunking (CDC) policy can obtain a higher Redundancy Elimination (RE) ratio but may suffer from a considerably higher computational requirement than fixed-size chunking. We build an inline NRE appliance which incorporates an improved FPGA based scheme to speed up CDC processing. To efficiently utilize the hardware resources, the whole NRE process is handled by a Virtualized NRE (VNRE) controller. The uniqueness of this VNRE that we developed lies in its ability to exploit the redundancy patterns of different TCP flows and customize the chunking process to achieve a higher RE ratio