A 1.2 V and 69 mW 60 GHz Multi-channel Tunable CMOS Receiver Design

A multi-channel receiver operating between 56 GHz and 70 GHz for coverage of different 60 GHz bands worldwide is implemented with a 90 nm Complementary Metal-Oxide Semiconductor (CMOS) process. The receiver containing an LNA, a frequency down-conversion mixer and a variable gain amplifier incorporating a band-pass filter is designed and implemented. This integrated receiver is tested at four channels of centre frequencies 58.3 GHz, 60.5 GHz, 62.6 GHz and 64.8 GHz, employing a frequency plan of an 8 GHz-intermediate frequency (IF). The achieved conversion gain by coarse gain control is between 4.8 dB–54.9 dB. The millimeter-wave receiver circuit is biased with a 1.2V supply voltage. The measured power consumption is 69 mW

A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends

Current reuse topology in UWB CMOS LNA

Non

Design and Simulation of Two Stage Wideband CMOS Amplifier in 90 NM Technology

Design and simulation of 7 GHz CMOS wideband amplifier(CMOSWA) using a modified cascode circuit realized in  90-nm CMOS technology is presented here. The proposed system consists of two stages, namely a modified folded cascode and an inductively degenerated common source amplifier. The circuit is experimented with and without a feedback network. This work discusses the performance variation as a function of reactive components, and the initial stage results in 22 dB gain,2.6 GHz bandwidth, and 40GHz unity gain-bandwidth. The circuit without the feedback network exhibits 30.7dB gain,4.8GHz bandwidth(BW), and 10GHz unity-gain bandwidth(UGB). The reactive feedback network's inclusion helped to achieve 38.7 dB gain, 6.95GHz BW, 30GHz UGB, and 55o phase margin. The circuit consumes 1.4mW power from a 1.8V power supply. Simulation results of the proposed circuit are comparable and better than the reported wideband designs in the literature. Realization of our proposed circuit would add value to the area of wideband amplifier design

Ultra high data rate CMOS front ends

The availability of numerous mm-wave frequency bands for wireless communication has motivated the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performing measurements using on-wafer probing at 60 GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitive to the effective length and bending of the interfaces. This paper presents different 60 GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, a Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60 GHZ integrated components and systems in the main stream CMOS technology

HIGH PERFORMANCE CMOS WIDE-BAND RF FRONT-END WITH SUBTHRESHOLD OUT OF BAND SENSING

In future, the radar/satellite wireless communication devices must support multiple standards and should be designed in the form of system-on-chip (SoC) so that a significant reduction happen on cost, area, pins, and power etc. However, in such device, the design of a fully on-chip CMOS wideband receiver front-end that can process several radar/satellite signal simultaneously becomes a multifold complex problem. Further, the inherent high-power out-of-band (OB) blockers in radio spectrum will make the receiver more non-linear, even sometimes saturate the receiver. Therefore, the proper blocker rejection techniques need to be incorporated. The primary focus of this research work is the development of a CMOS high-performance low noise wideband receiver architecture with a subthreshold out of band sensing receiver. Further, the various reconfigurable mixer architectures are proposed for performance adaptability of a wideband receiver for incoming standards. Firstly, a high-performance low- noise bandwidthenhanced fully differential receiver is proposed. The receiver composed of a composite transistor pair noise canceled low noise amplifier (LNA), multi-gate-transistor (MGTR) trans-conductor amplifier, and passive switching quad followed by Tow Thomas bi-quad second order filter based tarns-impedance amplifier. An inductive degenerative technique with low-VT CMOS architecture in LNA helps to improve the bandwidth and noise figure of the receiver. The full receiver system is designed in UMC 65nm CMOS technology and measured. The packaged LNA provides a power gain 12dB (including buffer) with a 3dB bandwidth of 0.3G – 3G, noise figure of 1.8 dB having a power consumption of 18.75mW with an active area of 1.2mm*1mm. The measured receiver shows 37dB gain at 5MHz IF frequency with 1.85dB noise figure and IIP3 of +6dBm, occupies 2mm*1.2mm area with 44.5mW of power consumption. Secondly, a 3GHz-5GHz auxiliary subthreshold receiver is proposed to estimate the out of blocker power. As a redundant block in the system, the cost and power minimization of the auxiliary receiver are achieved via subthreshold circuit design techniques and implementing the design in higher technology node (180nm CMOS). The packaged auxiliary receiver gives a voltage gain of 20dB gain, the noise figure of 8.9dB noise figure, IIP3 of -10dBm and 2G-5GHz bandwidth with 3.02mW power consumption. As per the knowledge, the measured results of proposed main-high-performancereceiver and auxiliary-subthreshold-receiver are best in state of art design. Finally, the various viii reconfigurable mixers architectures are proposed to reconfigure the main-receiver performance according to the requirement of the selected communication standard. The down conversion mixers configurability are in the form of active/passive and Input (RF) and output (IF) bandwidth reconfigurability. All designs are simulated in 65nm CMOS technology. To validate the concept, the active/ passive reconfigurable mixer configuration is fabricated and measured. Measured result shows a conversion gain of 29.2 dB and 25.5 dB, noise figure of 7.7 dB and 10.2 dB, IIP3 of -11.9 dBm and 6.5 dBm in active and passive mode respectively. It consumes a power 9.24mW and 9.36mW in passive and active case with a bandwidth of 1 to 5.5 GHz and 0.5 to 5.1 GHz for active/passive case respectively

Ultra high data rate CMOS FEs

The availability of numerous mm-wave frequency bands for wireless communication has motived the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performaning measurements using on-wafer probing at 60GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitiv to the effective length and bending of the interfaces. This paper presents different 60GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, A Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60GHZ integrated components and systems in the main stream CMOS technology

HIGH LINEARITY UNIVERSAL LNA DESIGNS FOR NEXT GENERATION WIRELESS APPLICATIONS

Design of the next generation (4G) systems is one of the most active and important area of research and development in wireless communications. The 2G and 3G technologies will still co-exist with the 4G for a certain period of time. Other applications such as wireless LAN (Local Area Network) and RFID are also widely used. As a result, there emerges a trend towards integrating multiple wireless functionalities into a single mobile device. Low noise amplifier (LNA), the most critical component of the receiver front-end, determines the sensitivity and noise figure of the receiver and is indispensable for the complete system. To satisfy the need for higher performance and diversity of wireless communication systems, three LNAs with different structures and techniques are proposed in the thesis based on the 4G applications. The first LNA is designed and optimized specifically for LTE applications, which could be easily added to the existing system to support different standards. In this cascode LNA, the nonlinearity coming from the common source (CS) and common gate (CG) stages are analyzed in detail, and a novel linear structure is proposed to enhance the linearity in a relatively wide bandwidth. The LNA has a bandwidth of 900MHz with the linearity of greater than 7.5dBm at the central frequency of 1.2GHz. Testing results show that the proposed structure effectively increases and maintains linearity of the LNA in a wide bandwidth. However, a broadband LNA that covers multiple frequency ranges appears more attractive due to system simplicity and low cost. The second design, a wideband LNA, is proposed to cover multiple wireless standards, such as LTE, RFID, GSM, and CDMA. A novel input-matching network is proposed to relax the tradeoff among noise figure and bandwidth. A high gain (>10dB) in a wide frequency range (1-3GHz) and a minimum NF of 2.5dB are achieved. The LNA consumes only 7mW on a 1.2V supply. The first and second LNAs are designed mainly for the LTE standard because it is the most widely used standard in the 4G communication systems. However, WiMAX, another 4G standard, is also being widely used in many applications. The third design targets on covering both the LTE and the WiMAX. An improved noise cancelling technique with gain enhancing structure is proposed in this design and the bandwidth is enlarged to 8GHz. In this frequency range, a maximum power gain of 14.5dB and a NF of 2.6-4.3dB are achieved. The core area of this LNA is 0.46x0.67mm2 and it consumes 17mW from a 1.2V supply. The three designs in the thesis work are proposed for the multi-standard applications based on the realization of the 4G technologies. The performance tradeoff among noise, linearity, and broadband impedance matching are explored and three new techniques are proposed for the tradeoff relaxation. The measurement results indicate the techniques effectively extend the bandwidth and suppress the increase of the NF and nonlinearity at high frequencies. The three proposed structures can be easily applied to the wideband and multi-standard LNA design