A sub-threshold cell library and methodology

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.Includes bibliographical references (p. 97-102).Sub-threshold operation is a compelling approach for energy-constrained applications where speed is of secondary concern, but increased sensitivity to process variation must be mitigated in this regime. With scaling of process technologies, random within-die variation has recently introduced another degree of complexity in circuit design. This thesis proposes approaches to mitigate process variation in sub-threshold circuits through device sizing, topology selection and fault-tolerant architecture. This thesis makes several contributions to a sub-threshold circuit design methodology. A formal analysis of device sizing trade-offs between delay, energy, and variability reveals that while minimum size devices provide lowest energy and delay in sub-threshold, their increased sensitivity to random dopant fluctuation may cause functional errors. A proposed variation-driven design approach enables consistent sizing of logic gates and registers for constant functional yield. A yield constraint imposes energy overhead at low power supply voltages and changes the minimum energy operating point of a circuit.(cont.) The optimal supply and device sizing depend on the topology of the circuit and its energy versus VDD characteristic. The analysis resulted in a 56-cell library in 65nm CMOS, which is incorporated in a computer-aided design flow. A test chip synthesized from this library implements a fault-tolerant FIR filter. Algorithmic error detection enables correction of transient timing errors due to delay variability in sub-threshold, and also allows the system frequency to be set more aggressively for the average case instead of the worst case.by Joyce Y.S. Kwong.S.M

Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation

Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0.3V because of its vanishing noise margins. This paper examines the minimum-energy operation point of 2T and 3T1D e-DRAM gain cells at the 32-nm technology node with different design points: up-sizing transistors, using high- V th transistors, read/write wordline assists; as well as operating conditions (i.e., temperature). First, the e-DRAM cells are evaluated without considering any process variations. Then, a full-factorial statistical analysis of e-DRAM cells is performed in the presence of threshold voltage variations and the effect of upsizing on mean MEP is reported. Finally, it is shown that the product of the read and write lengths provides a knob to tradeoff energy-efficiency for reliable MEP energy operation.Peer ReviewedPostprint (author's final draft

Variation Resilient Adaptive Controller for Subthreshold Circuits

Subthreshold logic is showing good promise as a viable ultra-low-power circuit design technique for power-limited applications. For this design technique to gain widespread adoption, one of the most pressing concerns is how to improve the robustness of subthreshold logic to process and temperature variations. We propose a variation resilient adaptive controller for subthreshold circuits with the following novel features: new sensor based on time-to-digital converter for capturing the variations accurately as digital signatures, and an all-digital DC-DC converter incorporating the sensor capable of generating an operating operating Vdd from 0V to 1.2V with a resolution of 18.75mV, suitable for subthreshold circuit operation. The benefits of the proposed controller is reflected with energy improvement of up to 55% compared to when no controller is employed. The detailed implementation and validation of the proposed controller is discussed

Ultra Low Power Design for Digital CMOS Circuits Operating Near Threshold

Circuits operating in the subthreshold region are synonymous to low energy operation. However, the penalty in performance is colossal. In this paper, we investigate how designing in moderate inversion region recuperates some of that lost performance, while remaining very near to the minimum energy point. An power based minimum energy delay modeling that is continuous over the weak, moderate, and strong inversion regions is presented. The effect of supply voltage and device sizing on the minimum energy and performance is determined. The proposed model is utilized to design a temperature to time generator at 32nm technology node asthe application of the proposed model

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

Significance Driven Hybrid 8T-6T SRAM for Energy-Efficient Synaptic Storage in Artificial Neural Networks

Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have led to a significant interest in the development of efficient hardware implementations. In this work, we focus on designing energy efficient on-chip storage for the synaptic weights. In order to minimize the power consumption of typical digital CMOS implementations of such large-scale networks, the digital neurons could be operated reliably at scaled voltages by reducing the clock frequency. On the contrary, the on-chip synaptic storage designed using a conventional 6T SRAM is susceptible to bitcell failures at reduced voltages. However, the intrinsic error resiliency of NNs to small synaptic weight perturbations enables us to scale the operating voltage of the 6TSRAM. Our analysis on a widely used digit recognition dataset indicates that the voltage can be scaled by 200mV from the nominal operating voltage (950mV) for practically no loss (less than 0.5%) in accuracy (22nm predictive technology). Scaling beyond that causes substantial performance degradation owing to increased probability of failures in the MSBs of the synaptic weights. We, therefore propose a significance driven hybrid 8T-6T SRAM, wherein the sensitive MSBs are stored in 8T bitcells that are robust at scaled voltages due to decoupled read and write paths. In an effort to further minimize the area penalty, we present a synaptic-sensitivity driven hybrid memory architecture consisting of multiple 8T-6T SRAM banks. Our circuit to system-level simulation framework shows that the proposed synaptic-sensitivity driven architecture provides a 30.91% reduction in the memory access power with a 10.41% area overhead, for less than 1% loss in the classification accuracy.Comment: Accepted in Design, Automation and Test in Europe 2016 conference (DATE-2016

Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors.

Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. The proposed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm2 of area. Four tested microchips were measured to consume only 113 pW with a resolution of 0.21 °C and an inaccuracy of ±1.65 °C, which represents a 628× reduction in power compared to prior-art without a significant reduction in performance

Robust low-power digital circuit design in nano-CMOS technologies

Device scaling has resulted in large scale integrated, high performance, low-power, and low cost systems. However the move towards sub-100 nm technology nodes has increased variability in device characteristics due to large process variations. Variability has severe implications on digital circuit design by causing timing uncertainties in combinational circuits, degrading yield and reliability of memory elements, and increasing power density due to slow scaling of supply voltage. Conventional design methods add large pessimistic safety margins to mitigate increased variability, however, they incur large power and performance loss as the combination of worst cases occurs very rarely. In-situ monitoring of timing failures provides an opportunity to dynamically tune safety margins in proportion to on-chip variability that can significantly minimize power and performance losses. We demonstrated by simulations two delay sensor designs to detect timing failures in advance that can be coupled with different compensation techniques such as voltage scaling, body biasing, or frequency scaling to avoid actual timing failures. Our simulation results using 45 nm and 32 nm technology BSIM4 models indicate significant reduction in total power consumption under temperature and statistical variations. Future work involves using dual sensing to avoid useless voltage scaling that incurs a speed loss. SRAM cache is the first victim of increased process variations that requires handcrafted design to meet area, power, and performance requirements. We have proposed novel 6 transistors (6T), 7 transistors (7T), and 8 transistors (8T)-SRAM cells that enable variability tolerant and low-power SRAM cache designs. Increased sense-amplifier offset voltage due to device mismatch arising from high variability increases delay and power consumption of SRAM design. We have proposed two novel design techniques to reduce offset voltage dependent delays providing a high speed low-power SRAM design. Increasing leakage currents in nano-CMOS technologies pose a major challenge to a low-power reliable design. We have investigated novel segmented supply voltage architecture to reduce leakage power of the SRAM caches since they occupy bulk of the total chip area and power. Future work involves developing leakage reduction methods for the combination logic designs including SRAM peripherals