A 0.18μm CMOS low-noise elliptic low-pass continuous-time filter

This paper presents a seventh order low-pass continuous-time elliptic filter for use in a high-performance wireline communication receiver. As an additional attribute, the filter provides programmable boost in the pass-band to counteract high frequency components attenuation. The filter shows a nominal cutoff frequency of fc=34 MHz , less than 1dB ripple in the pass-band, and a maximum stop-band rejection of 65dB. The filter also exhibits low noise feature (peak root spectral noise density below 56nV√Hz) and high linearity (more than 64dB of MTPR for a DMT signal of 0.5Vpp amplitude). It has been designed in a 0.18μm CMOS technology and it is compliant with industrial operation conditions (-40 to 85° C temperature variation and ± 5% power supply deviation). Simulations show a typical power consumption of 450 mW @ 1.8V supply.Ministerio de Ciencia y Tecnología TIC2003-0235

A 0.18 μm CMOS low noise, highly linear continuous-time seventh-order elliptic low-pass filter

This paper presents a fast procedure for the system-level evaluation of noise and distortion in continuous-time integrated filters. The presented approach is based on Volterra's series theory and matrix algebra manipulation. This procedure has been integrated in a constrained optimization routine to improve the dynamic range of the filter while keeping the area and power consumption at a minimum. The proposed approach is demonstrated with the design, from system- to physical-level, of a seventh-order low-pass continuous-time elliptic filter for a high-performance broadband power-line communication receiver. The filter shows a nominal cut-off frequency of fc = 34MHz, less than 1dB ripple in the pass-band, and a maximum stop-band rejection of 65dB. Additionally, the filter features 12dB programmable boost in the pass-band to counteract high frequency components attenuation. Taking into account its wideband transfer characteristic, the filter has been implemented using G m-C techniques. The basic building block of its structure, the transconductor, uses a source degeneration topology with local feedback for linearity improving and shows a worst-case intermodulation distortion of -70 dB for two tones close to the passband edge, separated by 1MHz, with 70mV of amplitude. The filter combines very low noise (peak root spectral noise density below 56nV/√Hz) and high linearity (more than 64dB of MTPR for a DMT signal of 0.5Vpp amplitude) properties. The filter has been designed in a 0.18μm CMOS technology and it is compliant with industrial operation conditions (-40 to 85°C temperature variation and ±5% power supply deviation). The filter occupies 13mm2 and exhibits a typical power consumption of 450 mW from a 1.8V voltage supply.Ministerio de Ciencia y Tecnología TIC2003-0235

Current-Mode Sixth-Order Elliptic Band-Pass Filter Using MCDTAs

In this paper, a modified CDTA (MCDTA) is presented and the current-mode second-order band-pass, high-pass notch, and low-pass notch circuits using MCDTAs are given. Moreover, a current-mode sixth-order elliptic band-pass filter is realized by means of cascade method. Having used six MCDTAs, six grounded capacitors and two resistors, the circuit is easy to be integrated, of which the parameters can be electronically adjusted by tuning bias currents. It is noted that the results of circuit simulations are in agreement with theory

Design and study of active filters

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Single-input Multiple-output Tunable Log-domain Current-mode Universal Filter

This paper describes the design of a current-mode single-input multiple-output (SIMO) universal filter based on the log-domain filtering concept. The circuit is a direct realization of a first-order differential equation for obtaining the lossy integrator circuit. Lossless integrators are realized by log-domain lossy integrators. The proposed filter comprises only two grounded capacitors and twenty-four transistors. This filter suits to operate in very high frequency (VHF) applications. The pole-frequency of the proposed filter can be controlled over five decade frequency range through bias currents. The pole-Q can be independently controlled with the pole-frequency. Non-ideal effects on the filter are studied in detail. A validated BJT model is used in the simulations operated by a single power supply, as low as 2.5 V. The simulation results using PSpice are included to confirm the good performances and are in agreement with the theory

10-GHz fully differential Sallen–Key lowpass biquad filters in 55nm SiGe BICMOS technology

Multi-GHz lowpass filters are key components for many RF applications and are required for the implementation of integrated high-speed analog-to-digital and digital-to-analog converters and optical communication systems. In the last two decades, integrated filters in the Multi-GHz range have been implemented using III-V or SiGe technologies. In all cases in which the size of passive components is a concern, inductorless designs are preferred. Furthermore, due to the recent development of high-speed and high-resolution data converters, highly linear multi-GHz filters are required more and more. Classical open loop topologies are not able to achieve high linearity, and closed loop filters are preferred in all applications where linearity is a key requirement. In this work, we present a fully differential BiCMOS implementation of the classical Sallen Key filter, which is able to operate up to about 10 GHz by exploiting both the bipolar and MOS transistors of a commercial 55-nm BiCMOS technology. The layout of the biquad filter has been implemented, and the results of post-layout simulations are reported. The biquad stage exhibits excellent SFDR (64 dB) and dynamic range (about 50 dB) due to the closed loop operation, and good power efficiency (0.94 pW/Hz/pole) with respect to comparable active inductorless lowpass filters reported in the literature. Moreover, unlike other filters, it exploits the different active devices offered by commercial SiGe BiCMOS technologies. Parametric and Monte Carlo simulations are also included to assess the robustness of the proposed biquad filter against PVT and mismatch variations

380 MHz Low-Power Sharp-Rejection Active-RC LPF for IEEE 802.15.4a UWB WPAN

This paper describes a wide-band sharp-rejection active-RC low pass filter (LPF) for pulse-based UWB IEEE 802.15.4a WPA, applications. Sharp rejection is attributed to the combination of different AC characteristic of three biquads in series. A simple operational amplifier (Op-amp) is adopted to ensure high frequency performance for the designed filter. The LPF is designed in 0.13μm TSMC CMOS process. The cutoff frequency is 380MHz with about 50% of the tuning range from 300-500MHz. The rejection is 40 dB at 600 MHz. The passband ripple is less than 1.5dB and the filter consumes 4.6mA from 1.2V supply. Core chip size is 580 x 700μm2