Digital Circuit Design Using Floating Gate Transistors

Floating gate (flash) transistors are used exclusively for memory applications today. These applications include SD cards of various form factors, USB flash drives and SSDs. In this thesis, we explore the use of flash transistors to implement digital logic circuits. Since the threshold voltage of flash transistors can be modified at a fine granularity during programming, several advantages are obtained by our flash-based digital circuit design approach. For one, speed binning at the factory can be controlled with precision. Secondly, an IC can be re-programmed in the field, to negate effects such as aging, which has been a significant problem in recent times, particularly for mission-critical applications. Thirdly, unlike a regular MOSFET, which has one threshold voltage level, a flash transistor can have multiple threshold voltage levels. The benefit of having multiple threshold voltage levels in a flash transistor is that it allows the ability to encode more symbols in each device, unlike a regular MOSFET. This allows us to implement multi-valued logic functions natively. In this thesis, we evaluate different flash-based digital circuit design approaches and compare their performance with a traditional CMOS standard cell-based design approach. We begin by evaluating our design approach at the cell level to optimize the design’s delay, power energy and physical area characteristics. The flash-based approach is demonstrated to be better than the CMOS standard cell approach, for these performance metrics. Afterwards, we present the performance of our design approach at the block level. We describe a synthesis flow to decompose a circuit block into a network of interconnected flash-based circuit cells. We also describe techniques to optimize the resulting network of flash-based circuit cells using don’t cares. Our optimization approach distinguishes itself from other optimization techniques that use don’t cares, since it a) targets a flash-based design flow, b) optimizes clusters of logic nodes at once instead of one node at a time, c) attempts to reduce the number of cubes instead of reducing the number of literals in each cube and d) performs optimization on the post-technology mapped netlist which results in a direct improvement in result quality, as compared to pre-technology mapping logic optimization that is typically done in the literature. The resulting network characteristics (delay, power, energy and physical area) are presented. These results are compared with a standard cell-based realization of the same block (obtained using commercial tools) and we demonstrate significant improvements in all the design metrics. We also study flash-based FPGA designs (both static and dynamic), and present the tradeoff of delay, power dissipation and energy consumption of the various designs. Our work differs from previously proposed flash-based FPGAs, since we embed the flash transistors (which store the configuration bits) directly within the logic and interconnect fabrics. We also present a detailed description of how the programming of the configuration bits is accomplished, for all the proposed designs

Digital Circuit Design Using Floating Gate Transistors

Floating gate (flash) transistors are used exclusively for memory applications today. These applications include SD cards of various form factors, USB flash drives and SSDs. In this thesis, we explore the use of flash transistors to implement digital logic circuits. Since the threshold voltage of flash transistors can be modified at a fine granularity during programming, several advantages are obtained by our flash-based digital circuit design approach. For one, speed binning at the factory can be controlled with precision. Secondly, an IC can be re-programmed in the field, to negate effects such as aging, which has been a significant problem in recent times, particularly for mission-critical applications. Thirdly, unlike a regular MOSFET, which has one threshold voltage level, a flash transistor can have multiple threshold voltage levels. The benefit of having multiple threshold voltage levels in a flash transistor is that it allows the ability to encode more symbols in each device, unlike a regular MOSFET. This allows us to implement multi-valued logic functions natively. In this thesis, we evaluate different flash-based digital circuit design approaches and compare their performance with a traditional CMOS standard cell-based design approach. We begin by evaluating our design approach at the cell level to optimize the design’s delay, power energy and physical area characteristics. The flash-based approach is demonstrated to be better than the CMOS standard cell approach, for these performance metrics. Afterwards, we present the performance of our design approach at the block level. We describe a synthesis flow to decompose a circuit block into a network of interconnected flash-based circuit cells. We also describe techniques to optimize the resulting network of flash-based circuit cells using don’t cares. Our optimization approach distinguishes itself from other optimization techniques that use don’t cares, since it a) targets a flash-based design flow, b) optimizes clusters of logic nodes at once instead of one node at a time, c) attempts to reduce the number of cubes instead of reducing the number of literals in each cube and d) performs optimization on the post-technology mapped netlist which results in a direct improvement in result quality, as compared to pre-technology mapping logic optimization that is typically done in the literature. The resulting network characteristics (delay, power, energy and physical area) are presented. These results are compared with a standard cell-based realization of the same block (obtained using commercial tools) and we demonstrate significant improvements in all the design metrics. We also study flash-based FPGA designs (both static and dynamic), and present the tradeoff of delay, power dissipation and energy consumption of the various designs. Our work differs from previously proposed flash-based FPGAs, since we embed the flash transistors (which store the configuration bits) directly within the logic and interconnect fabrics. We also present a detailed description of how the programming of the configuration bits is accomplished, for all the proposed designs

SGARFACE: A Novel Detector For Microsecond Gamma Ray Bursts

The Short GAmma Ray Front Air Cherenkov Experiment (SGARFACE) is operated at the Whipple Observatory utilizing the Whipple 10m gamma-ray telescope. SGARFACE is sensitive to gamma-ray bursts of more than 100MeV with durations from 100ns to 35us and provides a fluence sensitivity as low as 0.8 gamma-rays per m^2 above 200MeV (0.05 gamma-rays per m^2 above 2GeV) and allows to record the burst time structure.Comment: 29 pages, 14 figures, accepted for publication in Astroparticle Physic

Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage

We report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this paper, we developed a multiscale simulation framework that enables the evaluation of variability in the programming window of a flash cell with sub-20-nm gate length. Furthermore, we studied the threshold voltage variability due to random dopant fluctuations and fluctuations in the distribution of the molecular clusters in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media

A model for programming characteristics of Sonos type flash with high-kappa dielectrics

Silicon Oxide Nitride Oxide Silicon (SONOS) FLASH memories have recently gained a lot of attention due to better retention and scaling opportunities over the conventional Floating Gate FLASH memories. The constant demand for device scaling, to attain higher density, higher performance, and low cost per bit, has posed charge leakage problems. SONOS type devices with high-kappa storage layers and/or high-kappa blocking oxide have been proposed to alleviate the demand for constant tunnel oxide scaling. In comparison to conventional FLASH, these devices operate at lower voltages, exhibit higher programming speeds, comparable retention times, less over-erase problem and better compatibility with low power CMOS logic; The objective of this thesis is to develop a comprehensive model which can be used to obtain the programming characteristics, i.e., shift in threshold voltage vs. program time, for trap-based FLASH memories with high-kappa dielectrics. The proposed model is used to obtain the programming characteristics for SONOS type devices. The results from this model are compared with the experimental results and in general the agreement is good. For SONOS type devices with high-kappa blocking oxides, the density of available nitride traps for charge storage is shown to have a linear dependence with the potential energy difference between the silicon substrate and the nitride storage for different gate biases. The model is also used to get an estimate of available trap energy levels in the nitride layer as a function of applied voltage

A high-Tc 4-bit periodic threshold analog-to-digital converter

Using ramp-type Josephson junctions a 4-bit periodic threshold ADC has been designed, fabricated and tested. Practical design constraints will be discussed in terms of noise immunity, flux flow, available technology, switching speed etc. In a period of four years we fabricated about 100 chips in order to bring the technology to an acceptable level and to test various designs and circuit layouts. This resulted in a basic comparator that is rather insensitive to the stray field generated by the analog input signal or variations in mask alignment during fabrication. The input signal is fed into the comparators using a resistive divider network. Full functionality at low frequencies has been demonstrate

MADX: Memristors-As-Drivers for Crossbar logic

Memristors have the potential to not only replace conventional memory, but also to open up new design possibilities because they store 1s and 0s as resistances rather than voltages. A memristor architecture that has attracted interest for its versatility and ease of integration with existing CMOS technologies is the crossbar array. In this paper, I modify the MAD scheme to create the MADX scheme for performing basic logic operations within a crossbar array. Then, I compare this scheme against two of the most well-known schemes, MAGIC and IMPLY. In the case study of a full-adder, both a one-bit and an 8-bit version, the MADX scheme achieves lower latency and substantially lower area requirements than both MAGIC and IMPLY. This is because it is more flexible about storing output values than either, does not destroy input values unlike IMPLY, and has more basic operations. In particular, it has XOR, which neither IMPLY nor MAGIC have and is useful for additionPlan II Honors Progra