Placement for fast and reliable through-silicon-via (TSV) based 3D-IC layouts

The objective of this research is to explore the feasibility of addressing the major performance and reliability problems or issues, such as wirelength, stress-induced carrier mobility variation, temperature, and quality trade-offs, found in three-dimensional integrated circuits (3D ICs) that use through-silicon vias (TSVs) at placement stage. Four main works that support this goal are included. In the first work, wirelength of TSV-based 3D ICs is the main focus. In the second work, stress-induced carrier mobility variation in TSV-based 3D ICs is examined. In the third work, temperature inside TSV-based 3D ICs is investigated. In the final work, the quality trade-offs of TSV-based 3D-IC designs are explored. In the first work, a force-directed, 3D, and gate-level placement algorithm that efficiently handles TSVs is developed. The experiments based on synthesized benchmarks indicate that the developed algorithm helps generate GDSII layouts of 3D-IC designs that are optimized in terms of wirelength. In addition, the impact of TSVs on other physical aspects of 3D-IC designs is also studied by analyzing the GDSII layouts. In the second work, the model for carrier mobility variation caused by TSV and STI stresses is developed as well as the timing analysis flow considering the stresses. The impact of TSV and STI stresses on carrier mobility variation and performance of 3D ICs is studied. Furthermore, a TSV-stress-driven, force-directed, and 3D placement algorithm is developed. It exploits carrier mobility variation, caused by stress around TSVs after fabrication, to improve the timing and area objectives during placement. In addition, the impact of keep-out zone (KOZ) around TSVs on stress, carrier mobility variation, area, wirelength, and performance of 3D ICs is studied. In the third work, two temperature-aware global placement algorithms are developed. They exploit die-to-die thermal coupling in 3D ICs to improve temperature during placement. In addition, a framework used to evaluate the results from temperature-aware global placements is developed. The main component of the framework is a GDSII-level thermal analysis that considers all structures inside a TSV-based 3D IC while computing temperature. The developed placers are compared with several state-of-the-art placers published in recent literature. The experimental results indicate that the developed algorithms help improve the temperature of 3D ICs effectively. In the final work, three block-level design styles for TSV-based die-to-wafer bonded 3D ICs are discussed. Several 3D-IC layouts in the three styles are manually designed. The main difference among these layouts is the position of TSVs. Finally, the area, wirelength, timing, power, temperature, and mechanical stress of all layouts are compared to explore the trade-offs of layout quality.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Mukhopadhyay, Saibal; Committee Member: Swaminathan, Madhava

Electro-Thermal Codesign in Liquid Cooled 3D ICs: Pushing the Power-Performance Limits

The performance improvement of today's computer systems is usually accompanied by increased chip power consumption and system temperature. Modern CPUs dissipate an average of 70-100W power while spatial and temporal power variations result in hotspots with even higher power density (up to 300W/cm^2). The coming years will continue to witness a significant increase in CPU power dissipation due to advanced multi-core architectures and 3D integration technologies. Nowadays the problems of increased chip power density, leakage power and system temperatures have become major obstacles for further improvement in chip performance. The conventional air cooling based heat sink has been proved to be insufficient for three dimensional integrated circuits (3D-ICs). Hence better cooling solutions are necessary. Micro-fluidic cooling, which integrates micro-channel heat sinks into silicon substrates of the chip and uses liquid flow to remove heat inside the chip, is an effective active cooling scheme for 3D-ICs. While the micro-fluidic cooling provides excellent cooling to 3D-ICs, the associated overhead (cooling power consumed by the pump to inject the coolant through micro-channels) is significant. Moreover, the 3D-IC structure also imposes constraints on micro-channel locations (basically resource conflict with through-silicon-vias TSVs or other structures). In this work, we investigate optimized micro-channel configurations that address the aforementioned considerations. We develop three micro-channel structures (hotspot optimized cooling configuration, bended micro-channel and hybrid cooling network) that can provide sufficient cooling to 3D-IC with minimum cooling power overhead, while at the same time, compatible with the existing electrical structure such as TSVs. These configurations can achieve up to 70% cooling power savings compared with the configuration without any optimization. Based on these configurations, we then develop a micro-fluidic cooling based dynamic thermal management approach that maintains the chip temperature through controlling the fluid flow rate (pressure drop) through micro-channels. These cooling configurations are designed after the electrical parts, and therefore, compatible with the current standard IC design flow. Furthermore, the electrical, thermal, cooling and mechanical aspects of 3D-IC are interdependent. Hence the conventional design flow that designs the cooling configuration after electrical aspect is finished will result in inefficiencies. In order to overcome this problem, we then investigate electrical-thermal co-design methodology for 3D-ICs. Two co-design problems are explored: TSV assignment and micro-channel placement co-design, and gate sizing and fluidic cooling co-design. The experimental results show that the co-design enables a fundamental power-performance improvement over the conventional design flow which separates the electrical and cooling design. For example, the gate sizing and fluidic cooling co-design achieves 12% power savings under the same circuit timing constraint and 16% circuit speedup under the same power budget

Thermal optimization of a 3-D integrated circuit

In a 3-D integrated circuit the heat source distribution has a huge effect on the temperature distribution, so an optimal heat source distribution is needed. This paper gives a numerical approach to its thermal optimization, the result can be used for 3-D integrated circuit optimal design

Thermal, Power Delivery and Reliability Management for 3D ICS

Three-dimensional (3D) integration technology is promising to continuously improve the performance of electronic devices by vertically stacking multiple active layers and connecting them with Through-Silicon-Vias (TSVs). Meanwhile, the thermal and power integrity problems are exacerbated since the power flux in 3D integrated circuits (3D ICs) increases linearly with the number of stacked layers. Moreover, the TSV structure in 3D ICs introduces new reliability problems since TSVs are vulnerable to various failure mechanisms (e.g. electromigration) and the failure of power-ground TSVs will cause voltage drop thereby significantly degrading the performance of 3D ICs. To make things worse, the high temperature, thermal gradient and power load in 3D ICs accelerate the failure of TSVs. Therefore, in order to push the 3D integration technology to full commercialization, the thermal, power integrity and reliability problem should be properly addressed in both design-time and run-time. In 3D ICs, the heat flux will easily exceed the capability of the traditional air cooling. Therefore, several aggressive cooling methods are applied to remove heat from the 3D IC, which include micro-fluidic cooling, the phase change material based cooling etc. These cooling schemes are usually implemented close to the heat source to gain high heat removal capability, thus causing more challenges to the design of 3D ICs. Unfortunately, physical design tools for 3D ICs with those aggressive cooling methods are lack. In this thesis, we will focus on 3D ICs with micro-fluidic (MF) cooling. The physical design for this kind of 3D ICs involves complex trade-offs between the circuit performance, power delivery noise, and temperature. For example, both TSVs and micro-cavities for MF cooling are fabricated in the substrate region. Therefore, they will compete in space: the allocation of signal TSVs should avoid micro-cavities to realize a feasible design, thus enforcing more constraints to the physical placement of 3D ICs. Moreover, power delivery networks (PDNs) in 3D ICs are enabled by power-ground (P/G) TSVs. The number and distribution of P/G TSVs are also constrained by micro-cavities which will influence the power integrity of the 3D IC. In addition, the capability of MF cooling degrades downstream the flow of coolant thereby causing large in-layer temperature gradient. The spatial temperature variance will affect the reliability of 3D ICs. in order to avoid it, the gate/modules in 3D ICs should be placed properly. In order to address the trade-offs 3D ICs with MF cooling, different design-time methods for application specific ICs (ASICs) and field programmable gate arrays (FPGAs) are proposed, respectively. For 3D ASICs, we propose a co-design method that integrates the design of MF cooling heat sink and P/G TSVs to the physical placement for 3D ICs. Experiments on publicly available benchmarks show that using our method, we can achieve better results compared to the traditional sequential design flow. The case for 3D FPGAs is more complicated than ASICs since the routing and logic resources are fixed and the chip power and temperature is hard to estimate until the circuit is routed. Therefore, in this thesis, we first build a design space exploration (DSE) framework to study how MF cooling affects the design of 3D FPGAs. Following this, we utilize an existing 3D FPGA placement and routing tool to develop a cooling-aware placement framework for 3D FPGAs to reduce the temperature gradient. Since the activity of 3D ICs cannot be completely estimated at the design stage, the run-time management, besides design-time methods, is required to address the thermal, power and reliability problems in 3D ICs. However, the vertically stacked structure makes the run-time management for 3D ICs more complicated than 2D ICs. The major reason of this is that the power supply noise and temperature can be coupled across layers in 3D ICs. This means the activity of one layer may affect the performance and reliability of other layers through voltage/temperature coupling. As a result, we cannot perform run-time management for each layer (perhaps implemented with dierent chips) of 3D ICs separately as in 2D systems. Therefore, the space of control nodes will become larger and more complicated. To make things worse, the existing run-time management techniques have various drawbacks (e.g. large off-line characterization overhead, poor scalability etc. ), which needs more eort to improve. In this thesis, we propose a phase-driven Q-learning based run-time management technique which can tune the activity of the processor to maximize the 3D CPU performance subject to the reliability constraint

Heurísticas bioinspiradas para el problema de Floorplanning 3D térmico de dispositivos MPSoCs

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadores y Automática, leída el 20-06-2013Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Parametrization of computational domain in isogeometric analysis: methods and comparison

International audienceParameterization of computational domain plays an important role in isogeometric analysis as mesh generation in finite element analysis. In this paper, we investigate this problem in the 2D case, i.e, how to parametrize the computational domains by planar B-spline surface from the given CAD objects (four boundary planar B-spline curves). Firstly, two kinds of sufficient conditions for injective B-spline parameterization are derived with respect to the control points. Then we show how to find good parameterization of computational domain by solving a constraint optimization problem, in which the constraint condition is the injectivity sufficient conditions of planar B-spline parametrization, and the optimization term is the minimization of quadratic energy functions related to the first and second derivatives of planar B-spline parameterization. By using this method, the resulted parameterization has no self-intersections, and the isoparametric net has good uniformity and orthogonality. After introducing a posteriori error estimation for isogeometric analysis, we propose $r$-refinement method to optimize the parameterization by repositioning the inner control points such that the estimated error is minimized. Several examples are tested on isogeometric heat conduction problem to show the effectiveness of the proposed methods and the impact of the parameterization on the quality of the approximation solution. Comparison examples with known exact solutions are also presented

Parametric Yield of VLSI Systems under Variability: Analysis and Design Solutions

Variability has become one of the vital challenges that the designers of integrated circuits encounter. variability becomes increasingly important. Imperfect manufacturing process manifest itself as variations in the design parameters. These variations and those in the operating environment of VLSI circuits result in unexpected changes in the timing, power, and reliability of the circuits. With scaling transistor dimensions, process and environmental variations become significantly important in the modern VLSI design. A smaller feature size means that the physical characteristics of a device are more prone to these unaccounted-for changes. To achieve a robust design, the random and systematic fluctuations in the manufacturing process and the variations in the environmental parameters should be analyzed and the impact on the parametric yield should be addressed. This thesis studies the challenges and comprises solutions for designing robust VLSI systems in the presence of variations. Initially, to get some insight into the system design under variability, the parametric yield is examined for a small circuit. Understanding the impact of variations on the yield at the circuit level is vital to accurately estimate and optimize the yield at the system granularity. Motivated by the observations and results, found at the circuit level, statistical analyses are performed, and solutions are proposed, at the system level of abstraction, to reduce the impact of the variations and increase the parametric yield. At the circuit level, the impact of the supply and threshold voltage variations on the parametric yield is discussed. Here, a design centering methodology is proposed to maximize the parametric yield and optimize the power-performance trade-off under variations. In addition, the scaling trend in the yield loss is studied. Also, some considerations for design centering in the current and future CMOS technologies are explored. The investigation, at the circuit level, suggests that the operating temperature significantly affects the parametric yield. In addition, the yield is very sensitive to the magnitude of the variations in supply and threshold voltage. Therefore, the spatial variations in process and environmental variations make it necessary to analyze the yield at a higher granularity. Here, temperature and voltage variations are mapped across the chip to accurately estimate the yield loss at the system level. At the system level, initially the impact of process-induced temperature variations on the power grid design is analyzed. Also, an efficient verification method is provided that ensures the robustness of the power grid in the presence of variations. Then, a statistical analysis of the timing yield is conducted, by taking into account both the process and environmental variations. By considering the statistical profile of the temperature and supply voltage, the process variations are mapped to the delay variations across a die. This ensures an accurate estimation of the timing yield. In addition, a method is proposed to accurately estimate the power yield considering process-induced temperature and supply voltage variations. This helps check the robustness of the circuits early in the design process. Lastly, design solutions are presented to reduce the power consumption and increase the timing yield under the variations. In the first solution, a guideline for floorplaning optimization in the presence of temperature variations is offered. Non-uniformity in the thermal profiles of integrated circuits is an issue that impacts the parametric yield and threatens chip reliability. Therefore, the correlation between the total power consumption and the temperature variations across a chip is examined. As a result, floorplanning guidelines are proposed that uses the correlation to efficiently optimize the chip's total power and takes into account the thermal uniformity. The second design solution provides an optimization methodology for assigning the power supply pads across the chip for maximizing the timing yield. A mixed-integer nonlinear programming (MINLP) optimization problem, subject to voltage drop and current constraint, is efficiently solved to find the optimum number and location of the pads

VLSI Design

This book provides some recent advances in design nanometer VLSI chips. The selected topics try to present some open problems and challenges with important topics ranging from design tools, new post-silicon devices, GPU-based parallel computing, emerging 3D integration, and antenna design. The book consists of two parts, with chapters such as: VLSI design for multi-sensor smart systems on a chip, Three-dimensional integrated circuits design for thousand-core processors, Parallel symbolic analysis of large analog circuits on GPU platforms, Algorithms for CAD tools VLSI design, A multilevel memetic algorithm for large SAT-encoded problems, etc