A low power low noise high accuracy sensor IC

I investigated the design and implementation of low power low noise and high accuracy sensor IC for recording neural activity and studying sleep and other behavior in small animals. The sensor IC can acquire 16 electrophysiology signals in mice. It consists of 16 amplifier channels, a digital control circuit and a 16-bit 500 KSps charge redistribution self-calibrating successive approximation analog-to-digital converter (ADC). Each channel includes programmable gains from 12 to 250, a 7K Hz low-pass 2nd-order Butterworth filter and a track and hold. The integrated noise from 1 Hz to 7K Hz is 2.5 μV for 0 V DC offset input, 3.76 μV for 0.3 V DC offset input and 5.3 μV for –0.3 V DC offset input. The power supply rejection ratios (PSRR) for VDD and VSS are 61 db and 51 db at 1K Hz. The +/-0.3 V DC input offset of each channel is cancelled with two 5-bit DACs controlling the positive input node of the 2nd gain stage and 3rd gain stage op-amps. Total power dissipation is 1.2 mW for each amplifier channel with a +/- 1.5 V power supply. The 16-bit 500 KSps ADC has an input range of 2 V, a resolution of 16 bits, 6.2 mW power consumption and operates with +/- 1.5 V power supplies. Simulations show a signal-to-noise ratio of 90 dB for an effective accuracy of 15 bits in v TSMC’s 0.25μ CMOS process. A novel interleaving architecture and an improved comparator design contribute to reducing the power while maintaining the accuracy and speed. The ADC is intended to digitize the amplified neurophysiological signals from the companion 16-amplifier-channel IC. The amplifier channel IC die area is 19 mm2 and the ADC die area is 7 mm2 in TSMC’s 0.25μ CMOS process

A 0.35 μm CMOS 17-bit@40-kS/s cascade 2-1 ΣΔ modulator with programmable gain and programmable chopper stabilization

This paper describes a 0.35μm CMOS chopper-stabilized Switched-Capacitor 2-1 cascade ΣDelta; modulator for automotive sensor interfaces. For a better fitting to the characteristics of different sensor outputs, the modulator includes a programmable set of gains (x0.5, x1, x2, and x4) and a programmable set of chopper frequencies (fs/16, fs/8, fs/4 and fs/2). It has also been designed to operate within the restrictive environmental conditions of automotive electronics (-40°C, 175°C). The modulator architecture has been selected after an exhaustive comparison among multiple ΣΔM topologies in terms of resolution, speed and power dissipation. The design of the modulator building blocks is based upon a top-down CAD methodology which combines simulation and statistical optimization at different levels of the modulator hierarchy. The circuit is clocked at 5.12MHz and consumes, all together, 14.7mW from a single 3.3-V supply. Experimental measurements result in 99.77dB of Dynamic Range (DR), which combined with the gain programmability leads to an overall DR of 112dB. This puts the presented design beyond the state-of-the-art according with the existing bibliography

700mV low power low noise implantable neural recording system design

This dissertation presents the work for design and implementation of a low power, low noise neural recording system consisting of Bandpass Amplifier and Pipelined Analog to Digital Converter (ADC) for recording neural signal activities. A low power, low noise two stage neural amplifier for use in an intelligent Radio-Frequency Identification (RFID) based on folded cascode Operational Transconductance Amplifier (OTA) is utilized to amplify the neural signals. The optimization of the number of amplifier stages is discussed to achieve the minimum power and area consumption. The amplifier power supply is 0.7V. The midband gain of amplifier is 58.4dB with a 3dB bandwidth from 0.71 to 8.26 kHz. Measured input-referred noise and total power consumption are 20.7 μVrms and 1.90 μW respectively. The measured result shows that the optimizing the number of stages can achieve lower power consumption and demonstrates the neural amplifier's suitability for instu neutral activity recording. The advantage of power consumption of Pipelined ADC over Successive Approximation Register (SAR) ADC and Delta-Sigma ADC is discussed. An 8 bit fully differential (FD) Pipeline ADC for use in a smart RFID is presented in this dissertation. The Multiplying Digital to Analog Converter (MDAC) utilizes a novel offset cancellation technique robust to device leakage to reduce the input drift voltage. Simulation results of static and dynamic performance show this low power Pipeline ADC is suitable for multi-channel neural recording applications. The performance of all proposed building blocks is verified through test chips fabricated in IBM 180nm CMOS process. Both bench-top and real animal test results demonstrate the system's capability of recording neural signals for neural spike detection

High-speed Time-interleaved Digital-to-Analog Converter (TI-DAC) for Self-Interference Cancellation Applications

Nowadays, the need for higher data-rate is constantly growing to enhance the quality of the daily communication services. The full-duplex (FD) communication is exemplary method doubling the data-rate compared to half-duplex one. However, part of the strong output signal of the transmitter interferes to the receiver-side because they share the same antenna with limited attenuation and, as a result, the receiver’s performance is corrupted. Hence, it is critical to remove the leakage signal from the receiver’s path by designing another block called self-interference cancellation (SIC). The main goal of this dissertation is to develop the SIC block embedded in the current-mode FD receivers. To this end, the regenerated cancellation current signal is fed to the inputs of the base-band filter and after the mixer of a (direct-conversion) current-mode FD receiver. Since the pattern of the transmitter (the digital signal generated by DSP) is known, a high-speed digital-to-Analog converter (DAC) with medium-resolution can perfectly suppress main part of the leakage on the receiver path. A capacitive DAC (CDAC) is chosen among the available solutions because it is compatible with advanced CMOS technology for high-speed application and the medium-resolution designs. Although the main application of the design is to perform the cancellation, it can also be employed as a stand-alone DAC in the Analog (I/Q) transmitter. The SIC circuitry includes a trans-impedance amplifier (TIA), two DACs, high-speed digital circuits, and built-in-self-test section (BIST). According to the available specification for full-duplex communication system, the resolution and working frequency of the CDAC are calculated (designed) equal to 10-bit (3 binary+ 2 binary + 5 thermometric) and 1GHz, respectively. In order to relax the design of the TIA (settling time of the DAC), the CDAC implements using 2-way time-interleaved (TI) manner (the effective SIC frequency equals 2GHz) without using any calibration technique. The CDAC is also developed with the split-capacitor technique to lower the negative effects of the conventional binary-weighted DAC. By adding one extra capacitor on the left-side of the split-capacitor, LSB-side, the value of the split-capacitor can be chosen as an integer value of the unit capacitor. As a result, it largely enhances the linearity of the CADC and cancellation performance. If the block works as a stand-alone DAC with non-TI mode, the digital input code representing a Sinus waveform with an amplitude 1dB less than full-scale and output frequency around 10.74MHz, chosen by coherent sampling rule, then the ENOB, SINAD, SFDR, and output signal are 9.4-bit, 58.2 dB, 68.4dBc, and -9dBV. The simulated value of the |DNL| (static linearity) is also less than 0.7. The similar simulation was done in the SIC mode while the capacitive-array woks in the TI mode and cancellation current is set to the full-scale. Hence, the amount of cancelling the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. equals 51.3dB, 15.1 dB, 24dBc, 66.4 dB. The designed SIC cannot work as a closed-loop design. The layout was optimally drawn in order to minimize non-linearity, the power-consumption of the decoders, and reduce the complexity of the DAC. By distributing the thermometric cells across the array and using symmetrical switching scheme, the DAC is less subjected to the linear and gradient effect of the oxide. Based on the post-layout simulation results, the deviation of the design after drawing the layout is studied. To compare the results of the schematic and post-layout designs, the exact conditions of simulation above (schematic simulations) are used. When the block works as a stand-alone CDAC, the ENOB, SINAD, SFDR are 8.5-bit, 52.6 dB, 61.3 dBc. The simulated value of the |DNL| (static linearity) is also limited to 1.3. Likewise, the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. are equal to 44dB, 11.7 dB, 19 dBc, 55.7 dB

Wideband Fully-Programmable Dual-Mode CMOS Analogue Front-End for Electrical Impedance Spectroscopy

This paper presents a multi-channel dual-mode CMOS analogue front-end (AFE) for electrochemical and bioimpedance analysis. Current-mode and voltage-mode readouts, integrated on the same chip, can provide an adaptable platform to correlate single-cell biosensor studies with large-scale tissue or organ analysis for real-time cancer detection, imaging and characterization. The chip, implemented in a 180-nm CMOS technology, combines two current-readout (CR) channels and four voltage-readout (VR) channels suitable for both bipolar and tetrapolar electrical impedance spectroscopy (EIS) analysis. Each VR channel occupies an area of 0.48 mm 2 , is capable of an operational bandwidth of 8 MHz and a linear gain in the range between -6 dB and 42 dB. The gain of the CR channel can be set to 10 kΩ, 50 kΩ or 100 kΩ and is capable of 80-dB dynamic range, with a very linear response for input currents between 10 nA and 100 μ A. Each CR channel occupies an area of 0.21 mm 2 . The chip consumes between 530 μ A and 690 μ A per channel and operates from a 1.8-V supply. The chip was used to measure the impedance of capacitive interdigitated electrodes in saline solution. Measurements show close matching with results obtained using a commercial impedance analyser. The chip will be part of a fully flexible and configurable fully-integrated dual-mode EIS system for impedance sensors and bioimpedance analysis

Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios