Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures

We present a theoretical analysis and numerical simulations of lateral current density fronts in bistable resonant-tunneling diodes with Z-shaped current-voltage characteristics. The bistability is due to the charge accumulation in the quantum well of the double-barrier structure. We focus on asymmetric structures in the regime of sequential incoherent tunneling and study the dependence of the bistability range, the front velocity and the front width on the structure parameters. We propose a sectional design of a structure that is suitable for experimental observation of front propagation and discuss potential problems of such measurements in view of our theoretical findings. We point out the possibility to use sectional resonant-tunneling structures as controllable three-terminal switches.Comment: to appear in J.Appl.Phy

Theory of charge fluctuations and domain relocation times in semiconductor superlattices

Shot noise affects differently the nonlinear electron transport in semiconductor superlattices depending on the strength of the coupling among the superlattice quantum wells. Strongly coupled superlattices can be described by a miniband Boltzmann-Langevin equation from which a stochastic drift-diffusion equation is derived by means of a consistent Chapman-Enskog method. Similarly, shot noise in weakly coupled, highly doped semiconductor superlattices is described by a stochastic discrete drift-diffusion model. The current-voltage characteristics of the corresponding deterministic model consist of a number of stable branches corresponding to electric field profiles displaying two domains separated by a domain wall. If the initial state corresponds to a voltage on the middle of a stable branch and is suddenly switched to a final voltage corresponding to the next branch, the domains relocate after a certain delay time, called relocation time. The possible scalings of this mean relocation time are discussed using bifurcation theory and the classical results for escape of a Brownian particle from a potential well.Comment: 14 pages, 2 figure

Nonlinear stochastic discrete drift-diffusion theory of charge fluctuations and domain relocation times in semiconductor superlattices

A stochastic discrete drift-diffusion model is proposed to account for the effects of shot noise in weakly coupled, highly doped semiconductor superlattices. Their current-voltage characteristics consist of a number stable multistable branches corresponding to electric field profiles displaying two domains separated by a domain wall. If the initial state corresponds to a voltage on the middle of a stable branch and a sudden voltage is switched so that the final voltage corresponds to the next branch, the domains relocate after a certain delay time. Shot noise causes the distribution of delay times to change from a Gaussian to a first passage time distribution as the final voltage approaches that of the end of the first current branch. These results agree qualitatively with experiments by Rogozia {\it et al} (Phys. Rev. B {\bf 64}, 041308(R) (2001)).Comment: 9 pages, 12 figures, 2 column forma

Dynamics of Electric Field Domains and Oscillations of the Photocurrent in a Simple Superlattice Model

A discrete model is introduced to account for the time-periodic oscillations of the photocurrent in a superlattice observed by Kwok et al, in an undoped 40 period AlAs/GaAs superlattice. Basic ingredients are an effective negative differential resistance due to the sequential resonant tunneling of the photoexcited carriers through the potential barriers, and a rate equation for the holes that incorporates photogeneration and recombination. The photoexciting laser acts as a damping factor ending the oscillations when its power is large enough. The model explains: (i) the known oscillatory static I-V characteristic curve through the formation of a domain wall connecting high and low electric field domains, and (ii) the photocurrent and photoluminescence time-dependent oscillations after the domain wall is formed. In our model, they arise from the combined motion of the wall and the shift of the values of the electric field at the domains. Up to a certain value of the photoexcitation, the non-uniform field profile with two domains turns out to be metastable: after the photocurrent oscillations have ceased, the field profile slowly relaxes toward the uniform stationary solution (which is reached on a much longer time scale). Multiple stability of stationary states and hysteresis are also found. An interpretation of the oscillations in the photoluminescence spectrum is also given.Comment: 34 pages, REVTeX 3.0, 10 figures upon request, MA/UC3M/07/9

Solution Map Analysis of a Multiscale Drift-Diffusion Model for Organic Solar Cells

In this article we address the theoretical study of a multiscale drift-diffusion (DD) model for the description of photoconversion mechanisms in organic solar cells. The multiscale nature of the formulation is based on the co-presence of light absorption, conversion and diffusion phenomena that occur in the three-dimensional material bulk, of charge photoconversion phenomena that occur at the two-dimensional material interface separating acceptor and donor material phases, and of charge separation and subsequent charge transport in each three-dimensional material phase to device terminals that are driven by drift and diffusion electrical forces. The model accounts for the nonlinear interaction among four species: excitons, polarons, electrons and holes, and allows to quantitatively predict the electrical current collected at the device contacts of the cell. Existence and uniqueness of weak solutions of the DD system, as well as nonnegativity of all species concentrations, are proved in the stationary regime via a solution map that is a variant of the Gummel iteration commonly used in the treatment of the DD model for inorganic semiconductors. The results are established upon assuming suitable restrictions on the data and some regularity property on the mixed boundary value problem for the Poisson equation. The theoretical conclusions are numerically validated on the simulation of three-dimensional problems characterized by realistic values of the physical parameters

Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions

A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenomenological procedure sketched here. The resulting boundary conditions, which incorporate only physically well-defined parameters, are used to study the classical unipolar drift-diffusion model for the Gunn effect. The analysis of its stationary solutions reveals the presence of bistability and hysteresis for a certain range of contact parameters. Several types of Gunn effect are predicted to occur in the model, when no stable stationary solution exists, depending on the value of the parameters of the injecting contact appearing in the boundary condition. In this way, the critical role played by contacts in the Gunn effect is clearly stablished.Comment: 10 pages, 6 Post-Script figure

Photo-excited semiconductor superlattices as constrained excitable media: Motion of dipole domains and current self-oscillations

A model for charge transport in undoped, photo-excited semiconductor superlattices, which includes the dependence of the electron-hole recombination on the electric field and on the photo-excitation intensity through the field-dependent recombination coefficient, is proposed and analyzed. Under dc voltage bias and high photo-excitation intensities, there appear self-sustained oscillations of the current due to a repeated homogeneous nucleation of a number of charge dipole waves inside the superlattice. In contrast to the case of a constant recombination coefficient, nucleated dipole waves can split for a field-dependent recombination coefficient in two oppositely moving dipoles. The key for understanding these unusual properties is that these superlattices have a unique static electric-field domain. At the same time, their dynamical behavior is akin to the one of an extended excitable system: an appropriate finite disturbance of the unique stable fixed point may cause a large excursion in phase space before returning to the stable state and trigger pulses and wave trains. The voltage bias constraint causes new waves to be nucleated when old ones reach the contact.Comment: 19 pages, 8 figures, to appear in Phys. Rev.