Asynchronous Circuit Stacking for Simplified Power Management

As digital integrated circuits (ICs) continue to increase in complexity, new challenges arise for designers. Complex ICs are often designed by incorporating multiple power domains therefore requiring multiple voltage converters to produce the corresponding supply voltages. These converters not only take substantial on-chip layout area and/or off-chip space, but also aggregate the power loss during the voltage conversions that must occur fast enough to maintain the necessary power supplies. This dissertation work presents an asynchronous Multi-Threshold NULL Convention Logic (MTNCL) “stacked” circuit architecture that alleviates this problem by reducing the number of voltage converters needed to supply the voltage the ICs operate at. By stacking multiple MTNCL circuits between power and ground, supplying a multiple of VDD to the entire stack and incorporating simple control mechanisms, the dynamic range fluctuation problem can be mitigated. A 130nm Bulk CMOS process and a 32nm Silicon-on-Insulator (SOI) CMOS process are used to evaluate the theoretical effect of stacking different circuitry while running different workloads. Post parasitic physical implementations are then carried out in the 32nm SOI process for demonstrating the feasibility and analyzing the advantages of the proposed MTNCL stacking architecture

Comparison of Various Pipelined and Non-Pipelined SCl 8051 ALUs

This paper describes the development of an 8-bit SCL 8051 ALU with two versions: SCL 8051 ALU with nsleep and sleep signals and SCL 8051 ALU without nsleep. Both versions have combinational logic (C/L), registers, and completion components, which all utilize slept gates. Both three-stage pipelined and non-pipelined designs were examined for both versions. The four designs were compared in terms of area, speed, leakage power, average power and energy per operation. The SCL 8051 ALU without nsleep is smaller and faster, but it has greater leakage power. It also has lower average power, and less energy consumption than the SCL 8051 ALU with both nsleep and sleep signals. The pipelined SCL 8051 ALU is bigger, slower, and has larger leakage power, average power and energy consumption than the non-pipelined SCL 8051 ALU

Enhancing Power Efficient Design Techniques in Deep Submicron Era

Excessive power dissipation has been one of the major bottlenecks for design and manufacture in the past couple of decades. Power efficient design has become more and more challenging when technology scales down to the deep submicron era that features the dominance of leakage, the manufacture variation, the on-chip temperature variation and higher reliability requirements, among others. Most of the computer aided design (CAD) tools and algorithms currently used in industry were developed in the pre deep submicron era and did not consider the new features explicitly and adequately. Recent research advances in deep submicron design, such as the mechanisms of leakage, the source and characterization of manufacture variation, the cause and models of on-chip temperature variation, provide us the opportunity to incorporate these important issues in power efficient design. We explore this opportunity in this dissertation by demonstrating that significant power reduction can be achieved with only minor modification to the existing CAD tools and algorithms. First, we consider peak current, which has become critical for circuit's reliability in deep submicron design. Traditional low power design techniques focus on the reduction of average power. We propose to reduce peak current while keeping the overhead on average power as small as possible. Second, dual Vt technique and gate sizing have been used simultaneously for leakage savings. However, this approach becomes less effective in deep submicron design. We propose to use the newly developed process-induced mechanical stress to enhance its performance. Finally, in deep submicron design, the impact of on-chip temperature variation on leakage and performance becomes more and more significant. We propose a temperature-aware dual Vt approach to alleviate hot spots and achieve further leakage reduction. We also consider this leakage-temperature dependency in the dynamic voltage scaling approach and discover that a commonly accepted result is incorrect for the current technology. We conduct extensive experiments with popular design benchmarks, using the latest industry CAD tools and design libraries. The results show that our proposed enhancements are promising in power saving and are practical to solve the low power design challenges in deep submicron era

Novel dual-Vth independent-gate FinFET circuits

This paper describes gate work function and oxide thickness tuning to realize novel circuits using dual-Vth independent-gate FinFETs. Dual-Vth FinFETs with independent gates enable series and parallel merge transformations in logic gates, realizing compact low power alternatives. Furthermore, they also enable the design of a new class of compact logic gates with higher expressive power and flexibility than conventional forms, e.g., implementing 12 unique Boolean functions using only four transistors. The gates are designed and calibrated using the University of Florida double-gate model into a technology library. Synthesis results for 14 benchmark circuits from the ISCAS and OpenSPARC suites indicate that on average, the enhanced library reduces delay, power, and area by 9%, 21%, and 27%, respectively, over a conventional library designed using FinFETs in 32nm technology.NSF CAREER Award CCF-074685

Low Power SoC Design

The design of Low Power Systems-on-Chips (SoC) in very deep submicron technologies becomes a very complex task that has to bridge very high level system description with low-level considerations due to technology defaults and variations and increasing system and circuit complexity. This paper describes the major low-level issues, such as dynamic and static power consumption, temperature, technology variations, interconnect, DFM, reliability and yield, and their impact on high-level design, such as the design of multi-Vdd, fault-tolerant, redundant or adaptive chip architectures. Some very low power System-on-Chip (SoC) will be presented in three domains: wireless sensor networks, vision sensors and mobile TV

Design Automation and Application for Emerging Reconfigurable Nanotechnologies

In the last few decades, two major phenomena have revolutionized the electronic industry – the ever-increasing dependence on electronic circuits and the Complementary Metal Oxide Semiconductor (CMOS) downscaling. These two phenomena have been complementing each other in a way that while electronics, in general, have demanded more computations per functional unit, CMOS downscaling has aptly supported such needs. However, while the computational demand is still rising exponentially, CMOS downscaling is reaching its physical limits. Hence, the need to explore viable emerging nanotechnologies is more imperative than ever. This thesis focuses on streamlining the existing design automation techniques for a class of emerging reconfigurable nanotechnologies. Transistors based on this technology exhibit duality in conduction, i.e. they can be configured dynamically either as a p-type or an n-type device on the application of an external bias. Owing to this dynamic reconfiguration, these transistors are also referred to as Reconfigurable Field-Effect Transistors (RFETs). Exploring and developing new technologies just like CMOS, require tackling two main challenges – first, design automation flow has to be modified to enable tailor- made circuit designs. Second, possible application opportunities should be explored where such technologies can outsmart the existing CMOS technologies. This thesis targets the above two objectives for emerging reconfigurable nanotechnologies by proposing approaches for enabling an Electronic Design Automation (EDA) flow for circuits based on RFETs and exploring hardware security as an application that exploits the transistor-level dynamic reconfiguration offered by this technology. This thesis explains the bottom-up approach adopted to propose a logic synthesis flow by identifying new logic gates and circuit design paradigms that can particularly exploit the dynamic reconfiguration offered by these novel nanotechnologies. This led to the subsequent need of finding natural Boolean logic abstraction for emerging reconfigurable nanotechnologies as it is shown that the existing abstraction of negative unate logic for CMOS technologies is sub-optimal for RFETs-based circuits. In this direction, it has been shown that duality in Boolean logic is a natural abstraction for this technology and can truly represent the duality in conduction offered by individual transistors. Finding this abstraction paved the way for defining suitable primitives and proposing various algorithms for logic synthesis and technology mapping. The following step is to explore compatible physical synthesis flow for emerging reconfigurable nanotechnologies. Using silicon nanowire-based RFETs, .lef and .lib files have been provided which can provide an end-to-end flow to generate .GDSII file for circuits exclusively based on RFETs. Additionally, new approaches have been explored to improve placement and routing for circuits based on reconfigurable nanotechnologies. It has been demonstrated how these approaches led to superior results as compared to the native flow meant for CMOS. Lastly, the unique property of transistor-level reconfiguration offered by RFETs is utilized to implement efficient Intellectual Property (IP) protection schemes against adversarial attacks. The ability to control the conduction of individual transistors can be argued as one of the impactful features of this technology and suitably fits into the paradigm of security measures. Prior security schemes based on CMOS technology often come with large overheads in terms of area, power, and delay. In contrast, RFETs-based hardware security measures such as logic locking, split manufacturing, etc. proposed in this thesis, demonstrate affordable security solutions with low overheads. Overall, this thesis lays a strong foundation for the two main objectives – design automation, and hardware security as an application, to push emerging reconfigurable nanotechnologies for commercial integration. Additionally, contributions done in this thesis are made available under open-source licenses so as to foster new research directions and collaborations.:Abstract List of Figures List of Tables 1 Introduction 1.1 What are emerging reconfigurable nanotechnologies? 1.2 Why does this technology look so promising? 1.3 Electronics Design Automation 1.4 The game of see-saw: key challenges vs benefits for emerging reconfigurable nanotechnologies 1.4.1 Abstracting ambipolarity in logic gate designs 1.4.2 Enabling electronic design automation for RFETs 1.4.3 Enhanced functionality: a suitable fit for hardware security applications 1.5 Research questions 1.6 Entire RFET-centric EDA Flow 1.7 Key Contributions and Thesis Organization 2 Preliminaries 2.1 Reconfigurable Nanotechnology 2.1.1 1D devices 2.1.2 2D devices 2.1.3 Factors favoring circuit-flexibility 2.2 Feasibility aspects of RFET technology 2.3 Logic Synthesis Preliminaries 2.3.1 Circuit Model 2.3.2 Boolean Algebra 2.3.3 Monotone Function and the property of Unateness 2.3.4 Logic Representations 3 Exploring Circuit Design Topologies for RFETs 3.1 Contributions 3.2 Organization 3.3 Related Works 3.4 Exploring design topologies for combinational circuits: functionality-enhanced logic gates 3.4.1 List of Combinational Functionality-Enhanced Logic Gates based on RFETs 3.4.2 Estimation of gate delay using the logical effort theory 3.5 Invariable design of Inverters 3.6 Sequential Circuits 3.6.1 Dual edge-triggered TSPC-based D-flip flop 3.6.2 Exploiting RFET’s ambipolarity for metastability 3.7 Evaluations 3.7.1 Evaluation of combinational logic gates 3.7.2 Novel design of 1-bit ALU 3.7.3 Comparison of the sequential circuit with an equivalent CMOS-based design 3.8 Concluding remarks 4 Standard Cells and Technology Mapping 4.1 Contributions 4.2 Organization 4.3 Related Work 4.4 Standard cells based on RFETs 4.4.1 Interchangeable Pull-Up and Pull-Down Networks 4.4.2 Reconfigurable Truth-Table 4.5 Distilling standard cells 4.6 HOF-based Technology Mapping Flow for RFETs-based circuits 4.6.1 Area adjustments through inverter sharings 4.6.2 Technology Mapping Flow 4.6.3 Realizing Parameters For The Generic Library 4.6.4 Defining RFETs-based Genlib for HOF-based mapping 4.7 Experiments 4.7.1 Experiment 1: Distilling standard-cells from a benchmark suite 4.7.2 Experiment 2A: HOF-based mapping . 4.7.3 Experiment 2B: Using the distilled standard-cells during mapping 4.8 Concluding Remarks 5 Logic Synthesis with XOR-Majority Graphs 5.1 Contributions 5.2 Organization 5.3 Motivation 5.4 Background and Preliminaries 5.4.1 Terminologies 5.4.2 Self-duality in NPN classes 5.4.3 Majority logic synthesis 5.4.4 Earlier work on XMG 5.4.5 Classification of Boolean functions 5.5 Preserving Self-Duality 5.5.1 During logic synthesis 5.5.2 During versatile technology mapping 5.6 Advanced Logic synthesis techniques 5.6.1 XMG resubstitution 5.6.2 Exact XMG rewriting 5.7 Logic representation-agnostic Mapping 5.7.1 Versatile Mapper 5.7.2 Support of supergates 5.8 Creating Self-dual Benchmarks 5.9 Experiments 5.9.1 XMG-based Flow 5.9.2 Experimental Setup 5.9.3 Synthetic self-dual benchmarks 5.9.4 Cryptographic benchmark suite 5.10 Concluding remarks and future research directions 6 Physical synthesis flow and liberty generation 6.1 Contributions 6.2 Organization 6.3 Background and Related Work 6.3.1 Related Works 6.3.2 Motivation 6.4 Silicon Nanowire Reconfigurable Transistors 6.5 Layouts for Logic Gates 6.5.1 Layouts for Static Functional Logic Gates 6.5.2 Layout for Reconfigurable Logic Gate 6.6 Table Model for Silicon Nanowire RFETs 6.7 Exploring Approaches for Physical Synthesis 6.7.1 Using the Standard Place & Route Flow 6.7.2 Open-source Flow 6.7.3 Concept of Driver Cells 6.7.4 Native Approach 6.7.5 Island-based Approach 6.7.6 Utilization Factor 6.7.7 Placement of the Island on the Chip 6.8 Experiments 6.8.1 Preliminary comparison with CMOS technology 6.8.2 Evaluating different physical synthesis approaches 6.9 Results and discussions 6.9.1 Parameters Which Affect The Area 6.9.2 Use of Germanium Nanowires Channels 6.10 Concluding Remarks 7 Polymporphic Primitives for Hardware Security 7.1 Contributions 7.2 Organization 7.3 The Shift To Explore Emerging Technologies For Security 7.4 Background 7.4.1 IP protection schemes 7.4.2 Preliminaries 7.5 Security Promises 7.5.1 RFETs for logic locking (transistor-level locking) 7.5.2 RFETs for split manufacturing 7.6 Security Vulnerabilities 7.6.1 Realization of short-circuit and open-circuit scenarios in an RFET-based inverter 7.6.2 Circuit evaluation on sub-circuits 7.6.3 Reliability concerns: A consequence of short-circuit scenario 7.6.4 Implication of the proposed security vulnerability 7.7 Analytical Evaluation 7.7.1 Investigating the security promises 7.7.2 Investigating the security vulnerabilities 7.8 Concluding remarks and future research directions 8 Conclusion 8.1 Concluding Remarks 8.2 Directions for Future Work Appendices A Distilling standard-cells B RFETs-based Genlib C Layout Extraction File (.lef) for Silicon Nanowire-based RFET D Liberty (.lib) file for Silicon Nanowire-based RFET

DCCII-Based Novel Lossless Grounded Inductance Simulators With No Element Matching Constrains

In 1996, the differential current conveyor (DCCII) was introduced as a versatile active element with current differencing capability. Therefore, in this study, the usefulness of the DCCII is shown on six novel lossless grounded inductance simulator circuits. Proposed circuits simultaneously employ minimum number of elements, i.e. single DCCII, one capacitor, and two resistors. No passive element matching restriction is needed and all solutions are electronically tunable in case that one of resistors is replaced by MOSFET-based voltage-controlled resistor. The internal structure of the active element has been implemented using the TSMC 0.25 um SCN025 CMOS process BSIM3v3.1 parameters. Firstly, the performance of the selected inductor simulator is evaluated and subsequently verified in the design of 5th-order high-pass ladder and 2nd-order frequency filters. In addition, experimental results using commercially available AD844/ADs are given to verify the theoretical analysis and SPICE simulations