FVF-Based Low-Dropout Voltage Regulator with Fast Charging/Discharging Paths for Fast Line and Load Regulation

A new internally compensated low drop-out voltage regulator based on the cascoded flipped voltage follower is presented in this paper. Adaptive biasing current and fast charging/discharging paths have been added to rapidly charge and discharge the parasitic capacitance of the pass transistor gate, thus improving the transient response. The proposed regulator was designed with standard 65-nm CMOS technology. Measurements show load and line regulations of 433.80 μV/mA and 5.61 mV/V, respectively. Furthermore, the output voltage spikes are kept under 76 mV for 0.1 mA to 100 mA load variations and 0.9 V to 1.2 V line variations with rise and fall times of 1 μs. The total current consumption is 17.88 μA (for a 0.9 V supply voltage).Ministerio de Economía y Competitividad TEC2015-71072-C3-3-RConsejería de Economía, Innovación y Ciencia. Junta de Andalucía P12-TIC-186

Reducing MOSFET 1/f Noise and Power Consumption by "Switched Biasing"

Switched biasing is proposed as a technique for reducing the 1/f noise in MOSFET's. Conventional techniques, such as chopping or correlated double sampling, reduce the effect of 1/f noise in electronic circuits, whereas the switched biasing technique reduces the 1/f noise itself. Whereas noise reduction techniques generally lead to more power consumption, switched biasing can reduce the power consumption. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its intrinsic 1/f noise. As the 1/f noise is reduced at its physical roots, high frequency circuits, in which 1/f noise is being upconverted, can also benefit. This is demonstrated by applying switched biasing in a 0.8 ¿m CMOS sawtooth oscillator. By periodically switching off the bias currents, during time intervals that they are not contributing to the circuit operation, a reduction of the 1/f noise induced phase noise by more than 8 dB is achieved, while the power consumption is also reduced by 30

Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors.

Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. The proposed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm2 of area. Four tested microchips were measured to consume only 113 pW with a resolution of 0.21 °C and an inaccuracy of ±1.65 °C, which represents a 628× reduction in power compared to prior-art without a significant reduction in performance

Generating All Two-MOS-Transistor Amplifiers Leads to New Wide-Band LNAs

This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-µm CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V

Ultra-low Quiescent Current NMOS Low Dropout Regulator With Fast Transient response for Always-On Internet-of-Things Applications

abstract: The increased adoption of Internet-of-Things (IoT) for various applications like smart home, industrial automation, connected vehicles, medical instrumentation, etc. has resulted in a large scale distributed network of sensors, accompanied by their power supply regulator modules, control and data transfer circuitry. Depending on the application, the sensor location can be virtually anywhere and therefore they are typically powered by a localized battery. To ensure long battery-life without replacement, the power consumption of the sensor nodes, the supply regulator and, control and data transmission unit, needs to be very low. Reduction in power consumption in the sensor, control and data transmission is typically done by duty-cycled operation such that they are on periodically only for short bursts of time or turn on only based on a trigger event and are otherwise powered down. These approaches reduce their power consumption significantly and therefore the overall system power is dominated by the consumption in the always-on supply regulator. Besides having low power consumption, supply regulators for such IoT systems also need to have fast transient response to load current changes during a duty-cycled operation. Supply regulation using low quiescent current low dropout (LDO) regulators helps in extending the battery life of such power aware always-on applications with very long standby time. To serve as a supply regulator for such applications, a 1.24 µA quiescent current NMOS low dropout (LDO) is presented in this dissertation. This LDO uses a hybrid bias current generator (HBCG) to boost its bias current and improve the transient response. A scalable bias-current error amplifier with an on-demand buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. Switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA for a low-ESR output capacitor range of 1 - 47µF. Designed in a 0.25 µm CMOS process, the LDO has an output voltage range of 1V – 3V, a dropout voltage of 240 mV, and a core area of 0.11 mm2.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

A neural probe with up to 966 electrodes and up to 384 configurable channels in 0.13 μm SOI CMOS

In vivo recording of neural action-potential and local-field-potential signals requires the use of high-resolution penetrating probes. Several international initiatives to better understand the brain are driving technology efforts towards maximizing the number of recording sites while minimizing the neural probe dimensions. We designed and fabricated (0.13-μm SOI Al CMOS) a 384-channel configurable neural probe for large-scale in vivo recording of neural signals. Up to 966 selectable active electrodes were integrated along an implantable shank (70 μm wide, 10 mm long, 20 μm thick), achieving a crosstalk of −64.4 dB. The probe base (5 × 9 mm2) implements dual-band recording and a 1

FPGA Design Techniques for Stable Cryogenic Operation

In this paper we show how a deep-submicron FPGA can be modified to operate at extremely low temperatures through modifications in the supporting hardware and in the firmware programming it. Though FPGAs are not designed to operate at a few Kelvin, it is possible to do so on virtue of the extremely high doping levels found in deep-submicron CMOS technology nodes. First, any PCB component, that does not conform with this requirement, is removed. Both the majority of decoupling capacitor types and voltage regulators are not well behaved at cryogenic temperatures, asking for an ad-hoc solution to stabilize the FPGA supply voltage, especially for sensitive applications. Therefore, we have designed a firmware that enforces a constant power consumption, so as to stabilize the supply voltage in the interior of the FPGA chip. The FPGA is powered with a supply at several meters distance, causing significant IR drop and thus fluctuations on the local supply voltage. To achieve the stabilization, the variation in digital logic speed, which directly corresponds to changes in supply voltage, is constantly measured and corrected for through a tunable oscillator farm, implemented on the FPGA. The method is versatile and robust, enabling seamless porting to other FPGA families and configurations.Comment: The following article has been submitted to Review of Scientific Instruments. If it is published, it will be available on http://rsi.aip.or

Analog VLSI Circuit Design: Linear Voltage Regulator

The project outlined in this report is the design, layout, and routing of a linear voltage regulator using Cadence VLSI (very-large-scale integration) software. The design specifications for this regulator are as follows: input voltage range of 5V + 1V, load current capabilities of 150mA, and output voltage range of 1.15V to 3.3V. Furthermore, the design of this circuit was broken into three main sub-circuits: an error amplifier, bandgap reference circuitry, and biasing circuitry for the bandgap. Together, these sub-circuits integrated to make the final design. Research for different topologies for a voltage regulator was done and the Brokaw bandgap reference circuit by Paul Brokaw was used for the reference voltage. The layout and routing of these sub-circuits was performed by breaking these sub-circuits into even smaller sub-circuits and routing these individually. In the end, the group was able to layout and route all of the sub-circuits. However, several DRC and LVS errors were encountered throughout the layout process. Main sources of errors were due to the bipolar junction transistors and resistors used in this design. To the best knowledge of the group, layout and routing of the bipolar junction transistors used in this design have never been attempted at California Polytechnic State University San Luis Obispo. Therefore, it was expected that the group ran into several problems with these devices and it is outlined in the report how some of these problems were resolved. From the final design, it was found that the voltage regulator that was created in Cadence has an output voltage of about 3.4V; 100mV more than the intended 3.3V, yielding a discrepancy of 3% from the design specifications. In regards to temperature, the design deviates about 85mV across the industrial temperature range of -40℃ to 100℃. Another metric that was used to test the final design is the voltage deviation when the load current is swept from 0-150mA,which was found to be 170mV. It was found that the subcircuits created for this project performed fairly close to the intended purpose and therefore the design of the voltage regulator is seen as a success. Thus, the next step for this project will be to fix the DRC and LVS errors associated with BJTs and resistors. After that, extraction of the circuit should be done to determine the parasitic capacitance and inductance associated with this circuit. And finally, the GDSII file should be made to be sent to the chip manufacturer to tape-out the chip

Modified Kuijk Bandgap Reference with VGO Extraction

This creative component presents an innovative CMOS Bandgap Reference Generator topology targeting sub-ppm temperature coefficient over a wide temperature range. The proposed circuit consists of extracting VGO from the temperature characteristics of VBE. VGO is the bandgap voltage of the silicon that is extrapolated at 0K and is temperature independent over a wide range of temperature (-40°C to 125°C). Analytical constraints are carefully investigated which lead to the output voltage that is proportional to VGO when certain mismatches and opamp offsets are accurately trimmed using two temperatures trimming. The modified circuit, less number of operational amplifiers and resistors which make the circuit less complex, reduces area and power requirements. Transistor level simulations are implemented in GlobalFoundries 130nm process and achieve temperature coefficient about 3.5ppm/°C across the industrial temperature range (-40 °C to 80 °C)

A Silicon Carbide Power Management Solution for High Temperature Applications

The increasing demand for discrete power devices capable of operating in high temperature and high voltage applications has spurred on the research of semiconductor materials with the potential of breaking through the limitations of traditional silicon. Gallium nitride (GaN) and silicon carbide (SiC), both of which are wide bandgap materials, have garnered the attention of researchers and gradually gained market share. Although these wide bandgap power devices enable more ambitious commercial applications compared to their silicon-based counterparts, reaching their potential is contingent upon developing integrated circuits (ICs) capable of operating in similar environments. The foundation of any electrical system is the ability to efficiently condition and supply power. The work presented in this thesis explores integrated SiC power management solutions in the form of linear regulators and switched capacitor converters. While switched-mode converters provide high efficiency, the requirement of an inductor hinders the development of a compact, integrated solution that can endure harsh operating environments. Although the primary research motivation for wide bandgap ICs has been to provide control and protection circuitry for power devices, the circuitry designed in this work can be incorporated in stand-alone applications as well. Battery or generator powered data acquisition systems targeted towards monitoring industrial machinery is one potential usage scenario