Single-Event Upset Analysis and Protection in High Speed Circuits

The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at the input of a flip-flop and consequently is latched in the flip-flop and generates a soft-error. When an SET conjoined with a transition at a node along a critical path of the combinational part of a design, a transient delay fault may occur at the input of a flip-flop. On the other hand, increasing pipeline depth and using low power techniques such as multi-level power supply, and multi-threshold transistor convert almost all paths in a circuit to critical ones. Thus, studying the behavior of the SET in these kinds of circuits needs special attention. This paper studies the dynamic behavior of a circuit with massive critical paths in the presence of an SET. We also propose a novel flip-flop architecture to mitigate the effects of such SETs in combinational circuits. Furthermore, the proposed architecture can tolerant a single event upset (SEU) caused by particle strike on the internal nodes of a flip-flo

Transient fault behavior in a microprocessor: A case study

An experimental analysis is described which studies the susceptibility of a microprocessor based jet engine controller to upsets caused by current and voltage transients. A design automation environment which allows the run time injection of transients and the tracing from their impact device to the pin level is described. The resulting error data are categorized by the charge levels of the injected transients by location and by their potential to cause logic upsets, latched errors, and pin errors. The results show a 3 picoCouloumb threshold, below which the transients have little impact. An Arithmetic and Logic Unit transient is most likely to result in logic upsets and pin errors (i.e., impact the external environment). The transients in the countdown unit are potentially serious since they can result in latched errors, thus causing latent faults. Suggestions to protect the processor against these errors, by incorporating internal error detection and transient suppression techniques, are also made

Study of Radiation Effects on 28nm UTBB FDSOI Technology

With the evolution of modern Complementary Metal-Oxide-Semiconductor (CMOS) technology, transistor feature size has been scaled down to nanometers. The scaling has resulted in tremendous advantages to the integrated circuits (ICs), such as higher speed, smaller circuit size, and lower operating voltage. However, it also creates some reliability concerns. In particular, small device dimensions and low operating voltages have caused nanoscale ICs to become highly sensitive to operational disturbances, such as signal coupling, supply and substrate noise, and single event effects (SEEs) caused by ionizing particles, like cosmic neutrons and alpha particles. SEEs found in ICs can introduce transient pulses in circuit nodes or data upsets in storage cells. In well-designed ICs, SEEs appear to be the most troublesome in a space environment or at high altitudes in terrestrial environment. Techniques from the manufacturing process level up to the system design level have been developed to mitigate radiation effects. Among them, silicon-on-insulator (SOI) technologies have proven to be an effective approach to reduce single-event effects in ICs. So far, 28nm ultra-thin body and buried oxide (UTBB) Fully Depleted SOI (FDSOI) by STMicroelectronics is one of the most advanced SOI technologies in commercial applications. Its resilience to radiation effects has not been fully explored and it is of prevalent interest in the radiation effects community. Therefore, two test chips, namely ST1 and AR0, were designed and tested to study SEEs in logic circuits fabricated with this technology. The ST1 test chip was designed to evaluate SET pulse widths in logic gates. Three kinds of the on-chip pulse-width measurement detectors, namely the Vernier detector, the Pulse Capture detector and the Pulse Filter detector, were implemented in the ST1 chip. Moreover, a Circuit for Radiation Effects Self-Test (CREST) chain with combinational logic was designed to study both SET and SEU effects. The ST1 chip was tested using a heavy ion irradiation beam source in Radiation Effects Facility (RADEF), Finland. The experiment results showed that the cross-section of the 28nm UTBB-FDSOI technology is two orders lower than its bulk competitors. Laser tests were also applied to this chip to research the pulse distortion effects and the relationship between SET, SEU and the clock frequency. Total Ionizing Dose experiments were carried out at the University of Saskatchewan and European Space Agency with Co-60 gammacell radiation sources. The test results showed the devices implemented in the 28nm UTBB-FDSOI technology can maintain its functionality up to 1 Mrad(Si). In the AR0 chip, we designed five ARM Cortex-M0 cores with different logic protection levels to investigate the performance of approximate logic protecting methods. There are three custom-designed SRAM blocks in the test chip, which can also be used to measure the SEU rate. From the simulation result, we concluded that the approximate logic methodology can protect the digital logic efficiently. This research comprehensively evaluates the radiation effects in the 28nm UTBB-FDSOI technology, which provides the baseline for later radiation-hardened system designs in this technology

INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS

Radiation-induced single-event upsets (SEUs) pose a serious threat to the reliability of registers. The existing SEU analyses for static CMOS registers focus on the circuit-level impact and may underestimate the pertinent SEU information provided through node analysis. This thesis proposes SEU node analysis to evaluate the sensitivity of static registers and apply the obtained node information to improve the robustness of the register through selective node hardening (SNH) technique. Unlike previous hardening techniques such as the Triple Modular Redundancy (TMR) and the Dual Interlocked Cell (DICE) latch, the SNH method does not introduce larger area overhead. Moreover, this thesis also explores the impact of SEUs in dynamic flip-flops, which are appealing for the design of high-performance microprocessors. Previous work either uses the approaches for static flip-flops to evaluate SEU effects in dynamic flip-flops or overlook the SEU injected during the precharge phase. In this thesis, possible SEU sensitive nodes in dynamic flip-flops are re-examined and their window of vulnerability (WOV) is extended. Simulation results for SEU analysis in non-hardened dynamic flip-flops reveal that the last 55.3 % of the precharge time and a 100% evaluation time are affected by SEUs

An experimental study of fault propagation in a jet-engine controller

An experimental analysis of the impact of transient faults on a microprocessor-based jet engine controller, used in the Boeing 747 and 757 aircrafts is described. A hierarchical simulation environment which allows the injection of transients during run-time and the tracing of their impact is described. Verification of the accuracy of this approach is also provided. A determination of the probability that a transient results in latch, pin or functional errors is made. Given a transient fault, there is approximately an 80 percent chance that there is no impact on the chip. An empirical model to depict the process of error exploration and degeneration in the target system is derived. The model shows that, if no latch errors occur within eight clock cycles, no significant damage is likely to happen. Thus, the overall impact of a transient is well contained. A state transition model is also derived from the measured data, to describe the error propagation characteristics within the chip, and to quantify the impact of transients on the external environment. The model is used to identify and isolate the critical fault propagation paths, the module most sensitive to fault propagation and the module with the highest potential of causing external pin errors

Apparatus for and method of eliminating single event upsets in combinational logic

An apparatus for and method of eliminating single event upsets (or SEU) in combinational logic are used to prevent error propagation as a result of cosmic particle strikes to the combinational logic. The apparatus preferably includes a combinational logic block electrically coupled to a delay element, a latch and an output buffer. In operation, a signal from the combinational logic is electrically coupled to a first input of the latch. In addition, the signal is routed through the delay element to produce a delayed signal. The delayed signal is routed to a second input of the latch. The latch used in the apparatus for preventing SEU preferably includes latch outputs and a feature that the latch outputs will not change state unless both latch inputs are correct. For example, the latch outputs may not change state unless both latch inputs have the same logical state. When a cosmic particle strikes the combinational logic, a transient disturbance with a predetermined length may appear in the signal. However, a function of the delay element is to preferably provide a time delay greater than the length of the transient disturbance. Therefore, the transient disturbance will not reach both latch inputs simultaneously. As a result, the latch outputs will not permanently change state in error due to the transient disturbance. In addition, the output buffer preferably combines the latch outputs in such a way that the correct state is preserved at all times. Thus, combinational logic with protection from SEU is provided

Radiation Effects Measurement Test Structure using GF 32-nm SOI process

abstract: This thesis describes the design of a Single Event Transient (SET) duration measurement test-structure on the Global Foundries (previously IBM) 32-nm silicon-on insulator (SOI) process. The test structure is designed for portability and allows quick design and implementation on a new process node. Such a test structure is critical in analyzing the effects of radiation on complementary metal oxide semi-conductor (CMOS) circuits. The focus of this thesis is the change in pulse width during propagation of SET pulse and build a test structure to measure the duration of a SET pulse generated in real time. This test structure can estimate the SET pulse duration with 10ps resolution. It receives the input SET propagated through a SET capture structure made using a chain of combinational gates. The impact of propagation of the SET in a >200 deep collection structure is studied. A novel methodology of deploying Thick Gate TID structure is proposed and analyzed to build multi-stage chain of combinational gates. Upon using long chain of combinational gates, the most critical issue of pulse width broadening and shortening is analyzed across critical process corners. The impact of using regular standard cells on pulse width modification is compared with NMOS and/or PMOS skewed gates for the chain of combinational gates. A possible resolution to pulse width change is demonstrated using circuit and layout design of chain of inverters, two and three inputs NOR gates. The SET capture circuit is also tested in simulation by introducing a glitch signal that mimics an individual ion strike that could lead to perturbation in SET propagation. Design techniques and skewed gates are deployed to dampen the glitch that occurs under the effect of radiation. Simulation results, layout structures of SET capture circuit and chain of combinational gates are presented.Dissertation/ThesisMasters Thesis Electrical Engineering 201