Tunable n-path notch filters for blocker suppression: modeling and verification

N-path switched-RC circuits can realize filters with very high linearity and compression point while they are tunable by a clock frequency. In this paper, both differential and single-ended N-path notch filters are modeled and analyzed. Closed-form equations provide design equations for the main filtering characteristics and nonidealities such as: harmonic mixing, switch resistance, mismatch and phase imbalance, clock rise and fall times, noise, and insertion loss. Both an eight-path single-ended and differential notch filter are implemented in 65-nm CMOS technology. The notch center frequency, which is determined by the switching frequency, is tunable from 0.1 to 1.2 GHz. In a 50- environment, the N-path filters provide power matching in the passband with an insertion loss of 1.4–2.8 dB. The rejection at the notch frequency is 21–24 dB,P1 db> + 2 dBm, and IIP3 > + 17 dBm

A Differential 4-Path Highly Linear Widely Tunable On-Chip Band-Pass Filter

A passive switched capacitor RF band-pass filter with clock controlled center frequency is realized in 65nm CMOS. An off-chip transformer which acts as a balun, improves filter-Q and realizes impedance matching. The differential architecture reduces clock-leakage and suppresses selectivity around even harmonics of the clock. The filter has a constant -3dB bandwidth of 35MHz and can be tuned from 100MHz up to 1GHz. IIP3 is better than 19dBm, P1dB=2dBm and NF<;5.5dB at Pdiss=2mW to 16mW.\u

A 4-element phased-array system with simultaneous spatial- and frequency-domain filtering at the antenna inputs

To reject strong interference in excess of 0 dBm, a 4- element LO-phase shifting phased-array receiver with 8-phase passive mixers terminated by baseband capacitors is presented. The passive mixers upconvert both the spatial and frequency domain filtering from baseband to RF, hence realizing blocker suppression directly at the antenna inputs. A comprehensive mathematical model provides a set of closed-form equations describing the spatial and frequency domain filtering including imperfections. A prototype is realized in 28 nm CMOS. It exploits third harmonic reception to achieve a wide RF-frequency range from 0.6–4.5 GHz at 34–119 mW power dissipation, while also providing impedance matching. Out of the band/beam, a 1 dB-compression point as high as +12/+10 dBm has been measured. The 1-element noise figure over the RF-frequency range is 4–6.3 dB, while in-beam/band IIP3 values of 0– +2.6 dBm are measured. This proposed technique can be instrumental to make RF receivers more robust for interference, while still being flexibly tunable in frequency

Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios

Analysis and Design Methodologies for Switched-Capacitor Filter Circuits in Advanced CMOS Technologies

Analog filters are an extremely important block in several electronic systems, such as RF transceivers, data acquisition channels, or sigma-delta modulators. They allow the suppression of unwanted frequencies bands in a signal, improving the system’s performance. These blocks are typically implemented using active RC filters, gm-C filters, or switched-capacitor (SC) filters. In modern deep-submicron CMOS technologies, the transistors intrinsic gain is small and has a large variability, making the design of moderate and high-gain amplifiers, used in the implementation of filter blocks, extremely difficult. To avoid this difficulty, in the case of SC filters, the opamp can be replaced with a voltage buffer or a low-gain amplifier (< 2), simplifying the amplifier’s design and making it easier to achieve higher bandwidths, for the same power. However, due to the loss of the virtual ground node, the circuit becomes sensitive to the effects of parasitic capacitances, which effect needs to be compensated during the design process. This thesis addresses the task of optimizing SC filters (mainly focused on implementations using low-gain amplifiers), helping designers with the complex task of designing high performance SC filters in advanced CMOS technologies. An efficient optimization methodology is introduced, based on hybrid cost functions (equation-based/simulation-based) and using genetic algorithms. The optimization software starts by using equations in the cost function to estimate the filter’s frequency response reducing computation time, when compared with the electrical simulation of the circuit’s impulse response. Using equations, the frequency response can be quickly computed (< 1 s), allowing the use of larger populations in the genetic algorithm (GA) to cover the entire design space. Once the specifications are met, the population size is reduced and the equation-based design is fine-tuned using the more computationally intensive, but more accurate, simulation-based cost function, allowing to accurately compensate the parasitic capacitances, which are harder to estimate using equations. With this hybrid approach, it is possible to obtain the final optimized design within a reasonable amount of computation time. Two methods are described for the estimation of the filter’s frequency response. The first method is hierarchical in nature where, in the first step, the frequency response is optimized using the circuit’s ideal transfer function. The following steps are used to optimize circuits, at transistor level, to replace the ideal blocks (amplifier and switches) used in the first step, while compensating the effects of the circuit’s parasitic capacitances in the ideal design. The second method uses a novel efficient numerical methodology to obtain the frequency response of SC filters, based on the circuit’s first-order differential equations. The methodology uses a non-hierarchical approach, where the non-ideal effects of the transistors (in the amplifier and in the switches) are taken into consideration, allowing the accurate computation of the frequency response, even in the case of incomplete settling in the SC branches. Several design and optimization examples are given to demonstrate the performance of the proposed methods. The prototypes of a second order programmable bandpass SC filter and a 50 Hz notch SC filter have been designed in UMC 130 nm CMOS technology and optimized using the proposed optimization software with a supply voltage of 0.9 V. The bandpass SC filter has a total power consumption of 249 uW. The filter’s central frequency can be tuned between 3.9 kHz and 7.1 kHz, the gain between -6.4 dB and 12.6 dB, and the quality factor between 0.9 and 6.9. Depending on the bit configuration, the circuit’s THD is between -54.7 dB and -61.7 dB. The 50 Hz notch SC filter has a total power consumption of 273 uW. The transient simulation of the circuit’s extracted view (C+CC) shows an attenuation of 52.3 dB in the 50 Hz interference and that the desired 5 kHz signal has a THD of -92.3 dB

EMC in Power Electronics and PCB Design

This dissertation consists of two parts. Part I is about Electromagnetic Compatibility (EMC) in power electronics and part II is about the Maximum Radiated Electromagnetic Emissions Calculator (MREMC), which is a software tool for EMC in printed circuit board (PCB) design. Switched-mode power converters can be significant sources of electromagnetic fields that interfere with the proper operation of nearby circuits or distant radio receivers. Part I of this dissertation provides comprehensive and organized information on the latest EMC developments in power converters. It describes and evaluates different technologies to ensure that power converters meet electromagnetic compatibility requirements. Chapters 2 and 3 describe EMC noise sources and coupling mechanisms in power converters. Chapter 4 reviews the measurements used to characterize and troubleshoot EMC problems. Chapters 5 - 8 cover passive filter solutions, active filter solutions, noise cancellation methods and reduced-noise driving schemes. Part II describes the methods used, calculations made, and implementation details of the MREMC, which is a software tool that allows the user to calculate the maximum possible radiated emissions that could occur due to specific source geometries on a PCB. Chapters 9 - 13 covers the I/O coupling EMI algorithm, Common-mode EMI algorithm, Power Bus EMI algorithm and Differential-Mode EMI algorithm used in the MREMC

Design of sigma-delta modulators for analog-to-digital conversion intensively using passive circuits

This thesis presents the analysis, design implementation and experimental evaluation of passiveactive discrete-time and continuous-time Sigma-Delta (ΣΔ) modulators (ΣΔMs) analog-todigital converters (ADCs). Two prototype circuits were manufactured. The first one, a discrete-time 2nd-order ΣΔM, was designed in a 130 nm CMOS technology. This prototype confirmed the validity of the ultra incomplete settling (UIS) concept used for implementing the passive integrators. This circuit, clocked at 100 MHz and consuming 298 μW, achieves DR/SNR/SNDR of 78.2/73.9/72.8 dB, respectively, for a signal bandwidth of 300 kHz. This results in a Walden FoMW of 139.3 fJ/conv.-step and Schreier FoMS of 168 dB. The final prototype circuit is a highly area and power efficient ΣΔM using a combination of a cascaded topology, a continuous-time RC loop filter and switched-capacitor feedback paths. The modulator requires only two low gain stages that are based on differential pairs. A systematic design methodology based on genetic algorithm, was used, which allowed decreasing the circuit’s sensitivity to the circuit components’ variations. This continuous-time, 2-1 MASH ΣΔM has been designed in a 65 nm CMOS technology and it occupies an area of just 0.027 mm2. Measurement results show that this modulator achieves a peak SNR/SNDR of 76/72.2 dB and DR of 77dB for an input signal bandwidth of 10 MHz, while dissipating 1.57 mW from a 1 V power supply voltage. The ΣΔM achieves a Walden FoMW of 23.6 fJ/level and a Schreier FoMS of 175 dB. The innovations proposed in this circuit result, both, in the reduction of the power consumption and of the chip size. To the best of the author’s knowledge the circuit achieves the lowest Walden FOMW for ΣΔMs operating at signal bandwidth from 5 MHz to 50 MHz reported to date

Discrete-Time Mixing Receiver Architecture for RF-Sampling Software-Defined Radio

A discrete-time (DT) mixing architecture for RF-sampling receivers is presented. This architecture makes RF sampling more suitable for software-defined radio (SDR) as it achieves wideband quadrature demodulation and wideband harmonic rejection. The paper consists of two parts. In the first part, different downconversion techniques are classified and compared, leading to the definition of a DT mixing concept. The suitability of CT-mixing and RF-sampling receivers to SDR is also discussed. In the second part, we elaborate the DT-mixing architecture, which can be realized by de-multiplexing. Simulation shows a wideband 90° phase shift between I and Q outputs without systematic channel bandwidth limitation. Oversampling and harmonic rejection relaxes RF pre-filtering and reduces noise and interference folding. A proof-of-concept DT-mixing downconverter has been built in 65 nm CMOS, for 0.2 to 0.9 GHz RF band employing 8-times oversampling. It can reject 2nd to 6th harmonics by 40 dB typically and without systematic channel bandwidth limitation. Without an LNA, it achieves a gain of -0.5 to 2.5 dB, a DSB noise figure of 18 to 20 dB, an IIP3 = +10 dBm, and an IIP2 = +53 dBm, while consuming less than 19 mW including multiphase clock generation