Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Im Rahmen der vorliegenden Dissertation zum Thema „Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications“ wurde auf Basis einer 130 nm SiGe BiCMOS Technologie ein Through-Silicon Via (TSV) Technologiemodul zur Herstellung elektrischer Durchkontaktierungen für die Anwendung im Millimeterwellen und Sub-THz Frequenzbereich entwickelt. TSVs wurden mittels elektromagnetischer Simulationen modelliert und in Bezug auf ihre elektrischen Eigenschaften bis in den sub-THz Bereich bis zu 300 GHz optimiert. Es wurden die Wechselwirkungen zwischen Modellierung, Fertigungstechnologie und den elektrischen Eigenschaften untersucht. Besonderes Augenmerk wurde auf die technologischen Einflussfaktoren gelegt. Daraus schlussfolgernd wurde das TSV Technologiemodul entwickelt und in eine SiGe BiCMOS Technologie integriert. Hierzu wurde eine Via-Middle Integration gewählt, welche eine Freilegung der TSVs von der Wafer Rückseite erfordert. Durch die geringe Waferdicke von ca. 75 μm wird einen Carrier Wafer Handling Prozess verwendet. Dieser Prozess wurde unter der Randbedingung entwickelt, dass eine nachfolgende Bearbeitung der Wafer innerhalb der BiCMOS Pilotlinie erfolgen kann. Die Rückseitenbearbeitung zielt darauf ab, einen Redistribution Layer auf der Rückseite der BiCMOS Wafer zu realisieren. Hierzu wurde ein Prozess entwickelt, um gleichzeitig verschiedene TSV Strukturen mit variablen Geometrien zu realisieren und damit eine hohe TSV Design Flexibilität zu gewährleisten. Die TSV Strukturen wurden von DC bis über 300 GHz charakterisiert und die elektrischen Eigenschaften extrahiert. Dabei wurde gezeigt, dass TSV Verbindungen mit sehr geringer Dämpfung <1 dB bis 300 GHz realisierbar sind und somit ausgezeichnete Hochfrequenzeigenschaften aufweisen. Zuletzt wurden vielfältige Anwendungen wie das Grounding von Hochfrequenzschaltkreisen, Interposer mit Waveguides und 300 GHz Antennen dargestellt. Das Potential für Millimeterwellen Packaging und 3D Integration wurde evaluiert. TSV Technologien sind heutzutage in vielen Anwendungen z.B. im Bereich der Systemintegration von Digitalschaltkreisen und der Spannungsversorgung von integrierten Schaltkreisen etabliert. Im Rahmen dieser Arbeit wurde der Einsatz von TSVs für Millimeterwellen und dem sub-THz Frequenzbereich untersucht und die Anwendung für den sub-THz Bereich bis 300 GHz demonstriert. Dadurch werden neue Möglichkeiten der Systemintegration und des Packaging von Höchstfrequenzsystemen geschaffen.:Bibliographische Beschreibung List of symbols and abbreviations Acknowledgement 1. Introduction 2. FEM Modeling of BiCMOS & Interposer Through-Silicon Vias 3. Fabrication of BiCMOS & Silicon Interposer with TSVs 4. Characterization of BiCMOS Embedded Through-Silicon Vias 5. Applications 6. Conclusion and Future Work 7. Appendix 8. Publications & Patents 9. Bibliography 10. List of Figures and Table

RF-MEMS Switch Module in a 0.25 µm SiGe:C BiCMOS Process

Drahtlose Kommunikationstechnologien im Frequenzbereich bis 6 GHz wurden in der Vergangenheit in Bezug auf Leistungsfaehigkeit und Frequenzbereich kontinuierlich verbessert. Aufgrund der Skalierung nach dem Mooreschen Gesetz koennen heutzutage mm-Wellen Schaltkreise in CMOS-Technologien hergestellt werden. Durch die Einfuehrung von SiGe zur Realisierung einer leistungsfaehigen BiCMOS-Technologie wurde ebenfalls eine Verbesserung der Frequenzeigenschaften und Ausgangsleistungen erreicht, wodurch aktive CMOS- oder BiCMOS-Bauelemente vergleichbare Leistungsparameter zu III-V Technologien bei geringeren Kosten bereitstellen koennen. Bedingt durch das niederohmige Silizium-Substrat der BiCMOS-Technologie weisen vor allem passive Komponenten hoehere Verluste auf und weder III-V- noch BiCMOS-Technologien bieten hochlineare Schaltkomponenten mit geringen Verlusten und geringen Leistungsaufnahmen im mm-Wellen Bereich. RF-MEMS Schalter sind bekannt fuer ihre ausgezeichneten HF-Eigenschaften. Die Leistungsaufnahme von elektrostatisch angetriebenen RF-MEMS Schaltern ist vernachlaessigbar und es koennen im Vergleich zu halbleiter-basierten Schaltern hoehere Leistungen verarbeitet werden. Nichtsdestotrotz wurden RF-MEMS Schalter hauptsaechlich als eigenstaendige Komponenten entwickelt. Zur Systemintegration wird meist ein System-in-Package (SiP) Ansatz angewandt, der fuer niedrige Frequenzen geeignet ist, aber bei mm-Wellenanwendungen durch parasitaere Verluste an seine Grenzen stoesst. In dieser Arbeit wird ein in eine BiCMOS-Technologie integrierter RF-MEMS Schalter fuer mm-Wellen Anwendungen gezeigt. Das Design, die Integration und die experimentellen Ergebnisse sowie verschiedene Packaging-Konzepte werden beschrieben Zur Bereitstellung der hohen Auslenkungs-Spannungen wurde eine Ladungspumpe auf dem Chip integriert. Zum Schluss werden verschiedene, rekonfigurierbare mm-Wellen Schaltkreise zur Demonstration der Leistungsfaehigkeit des Schalters gezeigt.Wireless communication technologies have continuously advanced for both performance and frequency aspects, mainly for the frequencies up to 6 GHz. The results of Moore’s law now also give the opportunity to design mm-wave circuits using advanced CMOS technologies. The introduction of SiGe into CMOS, providing high performance BiCMOS, has also enhanced both the frequency and the power performance figures. The current situation is that the active devices of both CMOS and BiCMOS technologies can provide performance figures competitive with III-V technologies while having still the advantage of low cost. However, similar competition cannot be pronounced for the passive components considering the low-resistive substrates of BiCMOS technologies. Moreover, both III-V and BiCMOS technologies have the lack of low-loss and low-power consumption, as well as highly linear switching and tuning components at mm-wave frequencies. RF-MEMS switch technologies have been well-known with excellent RF- performance figures. The power consumption of electrostatic RF-MEMS switches is negligible and they can handle higher power levels compared to their semiconductor counterparts. However, RF-MEMS switches have been mostly demonstrated as standalone processes and have started to be used as commercial off-the-shelf (COTS) devices recently. The full system integration is typically done by a System-in-Package (SiP) approach. Although SiP is suitable for lower frequencies, the packaging parasitics limit the use of this approach for the mm-wave frequencies. In this thesis, a fully BiCMOS embedded RF-MEMS switch for mm-wave applications is proposed. The design, the implementation and the experimental results of the switch are provided. The developed RF-MEMS switch is packaged using different packaging approaches. To actuate the RF-MEMS switch, an on-chip high voltage generation circuit is designed and characterized. The robustness and the reliability performance of the switch are also presented. Finally, the developed RF-MEMS switch is successfully demonstrated in re-configurable mm-wave circuits

BiCMOS Millimetre-wave low-noise amplifier

Abstract: Please refer to full text to view abstract.D.Phil. (Electrical and Electronic Engineering

An X-Band power amplifier design for on-chip RADAR applications

Tremendous growth of RAdio Detecting And Ranging (RADAR) and communication electronics require low manufacturing cost, excellent performance, minimum area and highly integrated solutions for transmitter/receiver (T/R) modules, which are one of the most important blocks of RADAR systems. New circuit topologies and process technologies are investigated to fulfill these requirements of next generation RADAR systems. With the recent improvements, Silicon-Germanium Bipolar CMOS technology became a good candidate for recently used III-V technologies, such as GaAs, InP, and GaN, to meet high speed and performance requirements of present RADAR applications. As new process technologies are used, new solutions and circuit architectures have to be provided while taking into account the advantages and disadvantageous of used technologies. In this thesis, a new T/R module system architecture is presented for single/onchip X-Band phased array RADAR applications. On-chip T/R module consists of five blocks; T/R switch, single-pole double-throw (SPDT) switch, low noise amplifier (LNA), power amplifier (PA), and phase shifter. As the main focus of this thesis, a two-stage power amplifier is realized, discussed and measured. Designed in IHP's 0.25 [micrometer] SiGe BiCMOS process technology, the power amplifier operates in Class-A mode to achieve high linearity and presents a measured small-signal gain of 25 dB at 10 GHz. While achieving an output power of 22 dBm, the power amplifier has drain efficiency of 30 % in saturation. The total die area is 1 [square millimeters], including RF and DC pads. To our knowledge, these results are comparable to and/or better than those reported in the literature

Future Missions to Titan: Scientific and Engineering Challenges

Saturn’s largest moon, Titan, has been an enigma at every stage of its exploration. For three decades after the hazy atmosphere was discovered from the ground in the 1940s, debate ensued over whether it was a thin layer of methane or a dense shield of methane and nitrogen. Voyager 1 settled the matter in favor of the latter in 1980, but the details of the thick atmosphere discovered raised even more intriguing questions about the nature of the hidden surface, and the sources of resupply of methane to the atmosphere. The simplest possibility, that an ocean of methane and its major photochemical product ethane might cover the globe, was cast in doubt by Earth-based radar studies and then eliminated by Hubble Space Telescope and adaptive optics imaging in the near-infrared from large ground-based telescopes in the 1990s. These data, however, did not reveal the complexity of the surface that Cassini-Huygens would uncover beginning in 2004. A hydrological cycle appears to exist in which methane (in concert with ethane in some processes) plays the role on Titan that water plays on Earth. Channels likely carved by liquid methane and/or ethane, lakes and seas of these materials—some rivaling or exceeding North America’s Great Lakes in size—vast equatorial dune fields of complex organics made high in the atmosphere and shaped by wind, and intriguing hints of geologic activity suggest a world with a balance of geologic and atmospheric processes that is the solar system’s best analogue to Earth. Deep underneath Titan’s dense atmosphere and active, diverse surface is an interior ocean discovered by Cassini and thought to be largely composed of liquid water. Cassini-Huygens has provided spectacular data and has enabled us to glimpse the mysterious surface of Titan. However the mission will leave us with many questions that require future missions to answer. These include determining the composition of the surface and the geographic distribution of various organic constituents. Key questions remain about the ages of surface features, specifically whether cryovolcanism and tectonism are actively ongoing or are relics of a more active past. Ammonia, circumstantially suggested to be present by a variety of different kinds of Cassini-Huygens data, has yet to be seen. Is methane out-gassing from the interior or ice crust today? Are the lakes fed primarily by rain or underground methane-ethane aquifers (more properly, “alkanofers”) and how often have heavy methane rains come to the equatorial region? We should investigate whether Titan’s surface supported vaster seas of methane in the past, and whether complex self-organizing chemical systems have come and gone in the water volcanism, or even exist in exotic form today in the high latitude lakes. The presence of a magnetic field has yet to be established. A large altitude range in the atmosphere, from 400–900 km in altitude, will remain poorly explored after Cassini. Much remains to be understood about seasonal changes of the atmosphere at all levels, and the long-term escape of constituents to space. Other than Earth, Titan is the only world in our solar system known to have standing liquids and an active “hydrologic cycle” with clouds, rains, lakes and streams. The dense atmosphere and liquid lakes on Titan’s surface can be explored with airborne platforms and landed probes, but the key aspect ensuring the success of future investigations is the conceptualization and design of instruments that are small enough to fit on the landed probes and airborne platforms, yet sophisticated enough to conduct the kinds of detailed chemical (including isotopic), physical, and structural analyses needed to investigate the history and cycling of the organic materials. In addition, they must be capable of operating at cryogenic temperatures while maintaining the integrity of the sample throughout the analytic process. Illuminating accurate chemistries also requires that the instruments and tools are not simultaneously biasing the measurements due to localized temperature increases. While the requirements for these techniques are well understood, their implementation in an extremely low temperature environment with limited mass, power and volume is acutely challenging. No such instrument systems exist today. Missions to Titan are severely limited in both mass and power because spacecraft have to travel over a billion miles to get there and require a large amount of fuel, not only to reach Titan, but to maintain the ability to maneuver when they arrive. Landed missions have additional limitations, in that they must be packaged in a sealed aeroshell for entry into Titan’s atmosphere. Increases in landed mass and volume translate to increased aeroshell mass and size, requiring even more fuel for delivery to Titan. Nevertheless, missions during which such systems and instruments could be employed range from Discovery and New Frontiers class in situ probes that might be launched in the next decade, to a full-up Flagship class mission anticipated to follow the Europa Jupiter System Mission. Capitalizing on recent breakthroughs in cryo-technologies and smart materials fabrication, we developed conceptual designs of sample acquisition systems and instruments capable of in situ operation under low temperature environments. The study included two workshops aimed at brainstorming and actively discussing a broad range of ideas and associated challenges with landing instruments on Titan, as well as more focused discussions during the intervening part of the study period. The workshops each lasted ~4 days (Monday-Thursday/Friday), included postdoctoral fellows and students in addition to the core team members, and generated active engagement from the Caltech and JPL team participants, as well as from the outside institutions. During the workshops, new instruments and sampling methodologies were identified to handle the challenges of characterizing everything from small molecules in Titan’s upper atmosphere to gross mixtures of high molecular weight complex organics in condensed phases, including atmospheric aerosols and “organic sand” in dunes, to highly dilute components in ices and lakes. To enable these advances in cryogenic instrumentation breakthroughs in a wide range of disciplines, including electronics, chemical and mechanical engineering, and materials science were identified

Design of Optical Interconnect Transceiver Circuits and Network-on-chip Architectures for Inter- and Intra-chip Communication

The rapid expansion in data communication due to the increased multimedia applications and cloud computing services necessitates improvements in optical transceiver circuitry power efficiency as these systems scale well past 10 Gb/s. In order to meet these requirements, a 26 GHz transimpedance amplifier (TIA) is presented in a 0.25-µm SiGe BiCMOS technology. It employs a transformer-based regulated cascode (RGC) input stage which provides passive negative-feedback gain that enhances the effective transconductance of the TIA’s input common-base transistor; reducing the input resistance and pro- viding considerable bandwidth extension without significant noise degradation or power consumption. The TIA achieves a 53 dBΩ single-ended transimpedance gain with a 26√ GHz bandwidth and 21.3 pA/H z average input-referred noise current spectral density. Total chip power including output buffering is 28.2 mW from a 2.5 V supply, with the core TIA consuming 8.2 mW, and the chip area including pads is 960 µm × 780 µm. With the advance of photonic devices, optical interconnects becomes a promising technology to replace the conventional electrical channels for the high-bandwidth and power efficient inter/intra-chip interconnect. Second, a silicon photonic transceiver is presented for a silicon ring resonator-based optical interconnect architecture in a 1V standard 65nm CMOS technology. The transmitter circuits incorporate high-swing drivers with non-linear pre-emphasis and automatic bias-based tuning for resonance wavelength stabilization. An optical forwarded-clock adaptive inverter-based transimpedance amplifier (TIA) receiver trades-off power for varying link budgets by employing an on-die eye monitor and scaling the TIA supply for the required sensitivity. At 5 GB/s operation, the ring modulator un- der 4Vpp driver achieves 12.7dB extinction ratio with 4.04mW power consumption, while a 0.28nm tuning range is obtained at 6.8µW/GHz efficiency with the bias-based tuning scheme implemented with the 2Vpp transmitter. When tested with a wire-bonded 150f- F p-i-n photodetector, the receiver achieves -12.7dBm sensitivity at a BER=10−15 and consumes 2.2mW at 8 GB/s. Third, a novel Nano-Photonic Network-on-Chip (NoC) architecture, called LumiNoC, is proposed for high performance and power-efficient interconnects for the chip-multi- processors (CMPs). A 64-node LumiNoC under synthetic traffic enjoys 50% less latency at low loads versus other reported photonic NoCs, and ∼25% less latency versus the electrical 2D mesh NoCs on realistic workloads. Under the same ideal throughput, LumiNoC achieves laser power reduction of 78%, and overall power reduction of 44% versus competing designs

Future Missions to Titan: Scientific and Engineering Challenges

Saturn’s largest moon, Titan, has been an enigma at every stage of its exploration. For three decades after the hazy atmosphere was discovered from the ground in the 1940s, debate ensued over whether it was a thin layer of methane or a dense shield of methane and nitrogen. Voyager 1 settled the matter in favor of the latter in 1980, but the details of the thick atmosphere discovered raised even more intriguing questions about the nature of the hidden surface, and the sources of resupply of methane to the atmosphere. The simplest possibility, that an ocean of methane and its major photochemical product ethane might cover the globe, was cast in doubt by Earth-based radar studies and then eliminated by Hubble Space Telescope and adaptive optics imaging in the near-infrared from large ground-based telescopes in the 1990s. These data, however, did not reveal the complexity of the surface that Cassini-Huygens would uncover beginning in 2004. A hydrological cycle appears to exist in which methane (in concert with ethane in some processes) plays the role on Titan that water plays on Earth. Channels likely carved by liquid methane and/or ethane, lakes and seas of these materials—some rivaling or exceeding North America’s Great Lakes in size—vast equatorial dune fields of complex organics made high in the atmosphere and shaped by wind, and intriguing hints of geologic activity suggest a world with a balance of geologic and atmospheric processes that is the solar system’s best analogue to Earth. Deep underneath Titan’s dense atmosphere and active, diverse surface is an interior ocean discovered by Cassini and thought to be largely composed of liquid water. Cassini-Huygens has provided spectacular data and has enabled us to glimpse the mysterious surface of Titan. However the mission will leave us with many questions that require future missions to answer. These include determining the composition of the surface and the geographic distribution of various organic constituents. Key questions remain about the ages of surface features, specifically whether cryovolcanism and tectonism are actively ongoing or are relics of a more active past. Ammonia, circumstantially suggested to be present by a variety of different kinds of Cassini-Huygens data, has yet to be seen. Is methane out-gassing from the interior or ice crust today? Are the lakes fed primarily by rain or underground methane-ethane aquifers (more properly, “alkanofers”) and how often have heavy methane rains come to the equatorial region? We should investigate whether Titan’s surface supported vaster seas of methane in the past, and whether complex self-organizing chemical systems have come and gone in the water volcanism, or even exist in exotic form today in the high latitude lakes. The presence of a magnetic field has yet to be established. A large altitude range in the atmosphere, from 400–900 km in altitude, will remain poorly explored after Cassini. Much remains to be understood about seasonal changes of the atmosphere at all levels, and the long-term escape of constituents to space. Other than Earth, Titan is the only world in our solar system known to have standing liquids and an active “hydrologic cycle” with clouds, rains, lakes and streams. The dense atmosphere and liquid lakes on Titan’s surface can be explored with airborne platforms and landed probes, but the key aspect ensuring the success of future investigations is the conceptualization and design of instruments that are small enough to fit on the landed probes and airborne platforms, yet sophisticated enough to conduct the kinds of detailed chemical (including isotopic), physical, and structural analyses needed to investigate the history and cycling of the organic materials. In addition, they must be capable of operating at cryogenic temperatures while maintaining the integrity of the sample throughout the analytic process. Illuminating accurate chemistries also requires that the instruments and tools are not simultaneously biasing the measurements due to localized temperature increases. While the requirements for these techniques are well understood, their implementation in an extremely low temperature environment with limited mass, power and volume is acutely challenging. No such instrument systems exist today. Missions to Titan are severely limited in both mass and power because spacecraft have to travel over a billion miles to get there and require a large amount of fuel, not only to reach Titan, but to maintain the ability to maneuver when they arrive. Landed missions have additional limitations, in that they must be packaged in a sealed aeroshell for entry into Titan’s atmosphere. Increases in landed mass and volume translate to increased aeroshell mass and size, requiring even more fuel for delivery to Titan. Nevertheless, missions during which such systems and instruments could be employed range from Discovery and New Frontiers class in situ probes that might be launched in the next decade, to a full-up Flagship class mission anticipated to follow the Europa Jupiter System Mission. Capitalizing on recent breakthroughs in cryo-technologies and smart materials fabrication, we developed conceptual designs of sample acquisition systems and instruments capable of in situ operation under low temperature environments. The study included two workshops aimed at brainstorming and actively discussing a broad range of ideas and associated challenges with landing instruments on Titan, as well as more focused discussions during the intervening part of the study period. The workshops each lasted ~4 days (Monday-Thursday/Friday), included postdoctoral fellows and students in addition to the core team members, and generated active engagement from the Caltech and JPL team participants, as well as from the outside institutions. During the workshops, new instruments and sampling methodologies were identified to handle the challenges of characterizing everything from small molecules in Titan’s upper atmosphere to gross mixtures of high molecular weight complex organics in condensed phases, including atmospheric aerosols and “organic sand” in dunes, to highly dilute components in ices and lakes. To enable these advances in cryogenic instrumentation breakthroughs in a wide range of disciplines, including electronics, chemical and mechanical engineering, and materials science were identified

Investigation of radiation-hardened design of electronic systems with applications to post-accident monitoring for nuclear power plants

This research aims at improving the robustness of electronic systems used-in high level radiation environments by combining with radiation-hardened (rad-hardened) design and fault-tolerant techniques based on commercial off-the-shelf (COTS) components. A specific of the research is to use such systems for wireless post-accident monitoring in nuclear power plants (NPPs). More specifically, the following methods and systems are developed and investigated to accomplish expected research objectives: analysis of radiation responses, design of a radiation-tolerant system, implementation of a wireless post-accident monitoring system for NPPs, performance evaluation without repeat physical tests, and experimental validation in a radiation environment. A method is developed to analyze ionizing radiation responses of COTS-based devices and circuits in various radiation conditions, which can be applied to design circuits robust to ionizing radiation effects without repeated destructive tests in a physical radiation environment. Some mathematical models of semiconductor devices for post-irradiation conditions are investigated, and their radiation responses are analyzed using Technology Computer Aided Design (TCAD) simulator. Those models are then used in the analysis of circuits and systems under radiation condition. Based on the simulation results, method of rapid power off may be effectively to protect electronic systems under ionizing radiation. It can be a potential solution to mitigate damages of electronic components caused by radiation. With simulation studies of photocurrent responses of semiconductor devices, two methods are presented to mitigate the damages of total ionizing dose: component selection and radiation shielding protection. According to the investigation of radiation-tolerance of regular COTS components, most COTS-based semiconductor components may experience performance degradation and radiation damages when the total dose is greater than 20 K Rad (Si). A principle of component selection is given to obtain the suitable components, as well as a method is proposed to assess the component reliability under radiation environments, which uses radiation degradation factors, instead of the usual failure rate data in the reliability model. Radiation degradation factor is as the input to describe the radiation response of a component under a total radiation dose. In addition, a number of typical semiconductor components are also selected as the candidate components for the application of wireless monitoring in nuclear power plants. On the other hand, a multi-layer shielding protection is used to reduce the total dose to be less than 20 K Rad (Si) for a given radiation condition; the selected semiconductor devices can then survive in the radiation condition with the reduced total dose. The calculation method of required shielding thickness is also proposed to achieve the design objectives. Several shielding solutions are also developed and compared for applications in wireless monitoring system in nuclear power plants. A radiation-tolerant architecture is proposed to allow COTS-based electronic systems to be used in high-level radiation environments without using rad-hardened components. Regular COTS components are used with some fault-tolerant techniques to mitigate damages of the system through redundancy, online fault detection, real-time preventive remedial actions, and rapid power off. The functions of measurement, processing, communication, and fault-tolerance are integrated locally within all channels without additional detection units. A hardware emulation bench with redundant channels is constructed to verify the effectiveness of the developed radiation-tolerant architecture. Experimental results have shown that the developed architecture works effectively and redundant channels can switch smoothly in 500 milliseconds or less when a single fault or multiple faults occur. An online mechanism is also investigated to timely detect and diagnose radiation damages in the developed redundant architecture for its radiation tolerance enhancement. This is implemented by the built-in-test technique. A number of tests by using fault injection techniques have been carried out in the developed hardware emulation bench to validate the proposed detection mechanism. The test results have shown that faults and errors can be effectively detected and diagnosed. For the developed redundant wireless devices under given radiation dose (20 K Rad (Si)), the fault detection coverage is about 62.11%. This level of protection could be improved further by putting more resources (CPU consumption, etc.) into the function of fault detection, but the cost will increase. To apply the above investigated techniques and systems, under a severe accident condition in a nuclear power plant, a prototype of wireless post-accident monitoring system (WPAMS) is designed and constructed. Specifically, the radiation-tolerant wireless device is implemented with redundant and diversified channels. The developed system operates effectively to measure up-to-date information from a specific area/process and to transmit that information to remote monitoring station wirelessly. Hence, the correctness of the proposed architecture and approaches in this research has been successfully validated. In the design phase, an assessment method without performing repeated destructive physical tests is investigated to evaluate the radiation-tolerance of electronic systems by combining the evaluation of radiation protection and the analysis of the system reliability under the given radiation conditions. The results of the assessment studies have shown that, under given radiation conditions, the reliability of the developed radiation-tolerant wireless system can be much higher than those of non-redundant channels; and it can work in high-level radiation environments with total dose up to 1 M Rad (Si). Finally, a number of total dose tests are performed to investigate radiation effects induced by gamma radiation on distinct modern wireless monitoring devices. An experimental setup is developed to monitor the performance of signal measurement online and transmission of the developed distinct wireless electronic devices directly under gamma radiator at The Ohio State University Nuclear Reactor Lab (OSU-NRL). The gamma irradiator generates dose rates of 20 K Rad/h and 200 Rad/h on the samples, respectively. It was found that both measurement and transmission functions of distinct wireless measurement and transmission devices work well under gamma radiation conditions before the devices permanently damage. The experimental results have also shown that the developed radiation-tolerant design can be applied to effectively extend the lifespan of COTS-based electronic systems in the high-level radiation environment, as well as to improve the performance of wireless communication systems. According to testing results, the developed radiation-tolerant wireless device with a shielding protection can work at least 21 hours under the highest dose rate (20 K Rad/h). In summary, this research has addressed important issues on the design of radiation-tolerant systems without using rad-hardened electronic components. The proposed methods and systems provide an effective and economical solution to implement monitoring systems for obtaining up-to-date information in high-level radiation environments. The reported contributions are of significance both academically and in practice

Quantum and spin-based tunneling devices for memory systems

Rapid developments in information technology, such as internet, portable computing, and wireless communication, create a huge demand for fast and reliable ways to store and process information. Thus far, this need has been paralleled with the revolution in solid-state memory technologies. Memory devices, such as SRAM, DRAM, and flash, have been widely used in most electronic products. The primary strategy to keep up the trend is miniaturization. CMOS devices have been scaled down beyond sub-45 nm, the size of only a few atomic layers. Scaling, however, will soon reach the physical limitation of the material and cease to yield the desired enhancement in device performance. In this thesis, an alternative method to scaling is proposed and successfully realized. The proposed scheme integrates quantum devices, Si/SiGe resonant interband tunnel diodes (RITD), with classical CMOS devices forming a microsystem of disparate devices to achieve higher performance as well as higher density. The device/circuit designs, layouts and masks involving 12 levels were fabricated utilizing a process that incorporates nearly a hundred processing steps. Utilizing unique characteristics of each component, a low-power tunneling-based static random access memory (TSRAM) has been demonstrated. The TSRAM cells exhibit bistability operation with a power supply voltage as low as 0.37 V. Various TSRAM cells were also constructed and their latching mechanisms have been extensively investigated. In addition, the operation margins of TSRAM cells are evaluated based on different device structures and temperature variation from room temperature up to 200oC. The versatility of TSRAM is extended beyond the binary system. Using multi-peak Si/SiGe RITD, various multi-valued TSRAM (MV-TSRAM) configurations that can store more than two logic levels per cell are demonstrated. By this virtue, memory density can be substantially increased. Using two novel methods via ambipolar operation and utilization of enable/disable transistors, a six-valued MV-TSRAM cell are demonstrated. A revolutionary novel concept of integrating of Si/SiGe RITD with spin tunnel devices, magnetic tunnel junctions (MTJ), has been developed. This hybrid approach adds non-volatility and multi-valued memory potential as demonstrated by theoretical predictions and simulations. The challenges of physically fabricating these devices have been identified. These include process compatibility and device design. A test bed approach of fabricating RITD-MTJ structures has been developed. In conclusion, this body of work has created a sound foundation for new research frontiers in four different major areas: integrated TSRAM system, MV-TSRAM system, MTJ/RITD-based nonvolatile MRAM, and RITD/CMOS logic circuits

Integrated Circuits/Microchips

With the world marching inexorably towards the fourth industrial revolution (IR 4.0), one is now embracing lives with artificial intelligence (AI), the Internet of Things (IoTs), virtual reality (VR) and 5G technology. Wherever we are, whatever we are doing, there are electronic devices that we rely indispensably on. While some of these technologies, such as those fueled with smart, autonomous systems, are seemingly precocious; others have existed for quite a while. These devices range from simple home appliances, entertainment media to complex aeronautical instruments. Clearly, the daily lives of mankind today are interwoven seamlessly with electronics. Surprising as it may seem, the cornerstone that empowers these electronic devices is nothing more than a mere diminutive semiconductor cube block. More colloquially referred to as the Very-Large-Scale-Integration (VLSI) chip or an integrated circuit (IC) chip or simply a microchip, this semiconductor cube block, approximately the size of a grain of rice, is composed of millions to billions of transistors. The transistors are interconnected in such a way that allows electrical circuitries for certain applications to be realized. Some of these chips serve specific permanent applications and are known as Application Specific Integrated Circuits (ASICS); while, others are computing processors which could be programmed for diverse applications. The computer processor, together with its supporting hardware and user interfaces, is known as an embedded system.In this book, a variety of topics related to microchips are extensively illustrated. The topics encompass the physics of the microchip device, as well as its design methods and applications