Wide Band Gap Devices and Their Application in Power Electronics

Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the environment, such as global warming effects and greenhouse gas emission. Power devices based on wide band gap (WBG) material have the potential to deliver a paradigm shift in regard to energy efficiency and working with respect to the devices based on mature silicon (Si). Gallium nitride (GaN) and silicon carbide (SiC) have been treated as one of the most promising WBG materials that allow the performance limits of matured Si switching devices to be significantly exceeded. WBG-based power devices enable fast switching with lower power losses at higher switching frequency and hence, allow the development of high power density and high efficiency power converters. This paper reviews popular SiC and GaN power devices, discusses the associated merits and challenges, and finally their applications in power electronics

Diamond power devices: State of the art, modelling and figures of merit

With its remarkable electro-thermal properties such as the highest known thermal conductivity (~22W/cmbold dotK at room temperature) of any material, high hole mobility (> 2000cm2/Vbold dots), high critical electric field (>10MV/cm), and large bandgap (5.47eV), diamond has overwhelming advantages over silicon and other wide bandgap semiconductors (WBG) for ultra-high- voltage and high temperature applications (>3kV and >450 K, respectively). However, despite their tremendous potential, fabricated devices based on this material have not delivered yet the expected high-performance. The main reason behind this is the absence of shallow donor and acceptor species. The second reason is the lack of consistent physical models and design approaches specific to diamond-based devices that could significantly accelerate their development. The third reason is that the best performances of diamond devices are expected only when the highest electric field in reverse bias can be achieved, something that has not been widely obtained yet. In this context, high temperature operation and unique device structures based on the 2DHG formation represent two alternatives which could alleviate the issue of the incomplete ionization of dopant species. Nevertheless, ultra-high temperature operations and device parallelization could result in severe thermal management issues and affect the overall stability and long-term reliability. Additionally, problems connected to the reproducibility and the long-term stability of 2DHG based-devices still need to be resolved. This review paper aims at addressing these issues by providing the power device research community with a detailed set of physical models, device designs and challenges associated to all the aspects of the diamond power device value chain, from the definition of figures of merits, the material growth and processing conditions, to packaging solutions and targeted applications. Finally, the paper will conclude with suggestions on how to design power converters with diamond devices and will provide the roadmap of diamond devices development for power electronics.This work was supported by the U.K. Engineering and Physical Sciences Research Council for the University of Cambridge Centre for Doctoral Training under Grant EP/M506485/1 and by the French ANR Research Agency under grant ANR-16-CE05-0023 #Diamond-HVDC. The research leading to these results has been performed within the GREENDIAMOND project and received funding from the European Community's Horizon 2020 Programme (H2020/2014–2020) under grant agreement no. 640947

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Abstract: With its remarkable electro-thermal properties such as the highest known thermal conductivity (~22 W cm−1∙K−1 at RT of any material, high hole mobility (>2000 cm2 V−1 s−1), high critical electric field (>10 MV cm−1), and large band gap (5.47 eV), diamond has overwhelming advantages over silicon and other wide bandgap semiconductors (WBGs) for ultra-high-voltage and high-temperature (HT) applications (>3 kV and >450 K, respectively). However, despite their tremendous potential, fabricated devices based on this material have not yet delivered the expected high performance. The main reason behind this is the absence of shallow donor and acceptor species. The second reason is the lack of consistent physical models and design approaches specific to diamond-based devices that could significantly accelerate their development. The third reason is that the best performances of diamond devices are expected only when the highest electric field in reverse bias can be achieved, something that has not been widely obtained yet. In this context, HT operation and unique device structures based on the two-dimensional hole gas (2DHG) formation represent two alternatives that could alleviate the issue of the incomplete ionization of dopant species. Nevertheless, ultra-HT operations and device parallelization could result in severe thermal management issues and affect the overall stability and long-term reliability. In addition, problems connected to the reproducibility and long-term stability of 2DHG-based devices still need to be resolved. This review paper aims at addressing these issues by providing the power device research community with a detailed set of physical models, device designs and challenges associated with all the aspects of the diamond power device value chain, from the definition of figures of merit, the material growth and processing conditions, to packaging solutions and targeted applications. Finally, the paper will conclude with suggestions on how to design power converters with diamond devices and will provide the roadmap of diamond device development for power electronics

Role of wide bandgap materials in power electronics for smart grids applications

At present, the energy transition is leading to the replacement of large thermal power plants by distributed renewable generation and the introduction of different assets. Consequently, a massive deployment of power electronics is expected. A particular case will be the devices destined for urban environments and smart grids. Indeed, such applications have some features that make wide bandgap (WBG) materials particularly relevant. This paper analyzes the most important features expected by future smart applications from which the characteristics that their power semiconductors must perform can be deduced. Following, not only the characteristics and theoretical limits of wide bandgap materials already available on the market (SiC and GaN) have been analyzed, but also those currently being researched as promising future alternatives (Ga2O3, AlN, etc.). Finally, wide bandgap materials are compared under the needs determined by the smart applications, determining the best suited to them. We conclude that, although SiC and GaN are currently the only WBG materials available on the semiconductor portfolio, they may be displaced by others such as Ga2O3 in the near futur

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems

A High-Temperature, High-Voltage SOI Gate Driver Integrated Circuit with High Drive Current for Silicon Carbide Power Switches

High-temperature integrated circuit (IC) design is one of the new frontiers in microelectronics that can significantly improve the performance of the electrical systems in extreme environment applications, including automotive, aerospace, well-logging, geothermal, and nuclear. Power modules (DC-DC converters, inverters, etc.) are key components in these electrical systems. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing silicon carbide (SiC) based power switches which are capable of operating at much higher temperature than silicon (Si) and gallium arsenide (GaAs) based conventional devices. For successful realization of such high-temperature power electronic circuits, associated control electronics also need to perform at high temperature. In any power converter, gate driver circuit performs as the interface between a low-power microcontroller and the semiconductor power switches. This dissertation presents design, implementation, and measurement results of a silicon-on-insulator (SOI) based high-temperature (\u3e200 _C) and high-voltage (\u3e30 V) universal gate driver integrated circuit with high drive current (\u3e3 A) for SiC power switches. This mixed signal IC has primarily been designed for automotive applications where the under-hood temperature can reach 200 _C. Prototype driver circuits have been designed and implemented in a Bipolar-CMOS- DMOS (BCD) on SOI process and have been successfully tested up to 200 _C ambient temperature driving SiC switches (MOSFET and JFET) without any heat sink and thermal management. This circuit can generate 30V peak-to-peak gate drive signal and can source and sink 3A peak drive current. Temperature compensating and temperature independent design techniques are employed to design the critical functional units like dead-time controller and level shifters in the driver circuit. Chip-level layout techniques are employed to enhance the reliability of the circuit at high temperature. High-temperature test boards have been developed to test the prototype ICs. An ultra low power on-chip temperature sensor circuit has also been designed and integrated into the gate-driver die to safeguard the driver circuit against excessive die temperature (_ 220 _C). This new temperature monitoring approach utilizes a reverse biased p-n junction diode as the temperature sensing element. Power consumption of this sensor circuit is less than 10 uW at 200 _C

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

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Experimental Evaluation of Medium-Voltage Cascode Gallium Nitride (GaN) Devices for Bidirectional DC–DC Converters

As renewable energy sources, such as photovoltaic (PV) cells and wind turbines, are rapidly implemented in DC microgrids, energy storage systems play an increasingly significant role in ensuring uninterrupted power supply and in supporting the reliability and stability of microgrid operations. Power electronics, especially bidirectional DC–DC converters, are essential parts in distributed energy storage and alternative energy systems because of their grid synchronization, DC power management, and bidirectional power flow capabilities. While there is increasing demand for more efficient, compact, and reliable power converters in numerous applications, most existing power converters are hindered by traditional silicon (Si) based semiconductors, which are reaching their theoretical and material limits as there is an insignificant possibility for further improvements. Wide bandgap (WBG) semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), exhibit superior physical properties and demonstrate great potential for replacing conventional Si semiconductors with WBG technology, pushing the boundaries of power devices to handle higher switching frequencies, output power levels, blocking voltages, and operating temperatures. However, tradeoffs in switching performance and converter efficiency when substituting GaN devices for Si and SiC counterparts are not well defined, especially in a cascode configuration. Additional research with further detailed investigation and analysis is necessitated for medium-voltage GaN devices in power converter applications. Therefore, the objective of this research is to experimentally investigate the impact of emerging 650/900 V cascode GaN switching devices on bidirectional DC–DC converters that are suitable for energy storage and distributed renewable energy systems. Dynamic characteristics of Si, SiC, and cascode GaN power devices are examined through the double-pulse test (DPT) at different gate resistance values, device currents, and DC-bus voltages. Furthermore, the switching behavior and energy loss as well as the rate of voltage and current changes over the time are studied and analyzed at different operating conditions. A 500 W experimental converter prototype is designed and implemented to validate the benefits of cascode GaN devices on the converter operation and performance. Comprehensive analysis of the power losses and efficiency improvements for Si- based, SiC-based, and GaN-based converters are performed and evaluated as the switching frequency, working temperature, and output power level are increased. The experimental results reveal a significant improvement in switching performance and energy efficiency from cascode GaN power devices used in the bidirectional converters

Integralni pristup sustavima energetske elektronike

Today\u27s power electronics systems are typically manufactured using non-standard parts, resulting in labor-intensive manufacturing processes, increased cost and poor reliability. As a possible way to overcome these problems, this paper discusses an integrated approach to design and manufacture power electronics systems to improve performance, reliability and cost effectiveness. Addressed in the paper are the technologies being developed for integration of both power supplies and motor drives. These technologies include the planar metalization to eliminate bonding wires, the integration of power passives, the integration of current sensors, the development of power devices to facilitate integration as well as to improve performance, and the integration of necessary CAD tools to address the multidisciplinary aspects of integrated systems. The development of Integrated Power Electronics Modules (IPEMs) is demonstrated for two applications: (1) 1 kW asymmetrical half-bridge DC-DC converter and (2) 1–3 kW motor drive for heating, ventilation and air conditioning (HVAC). Electrical and thermal design tradeoffs of IPEMs and related enabling technologies are described in the paper.Današnji sustavi energetske elektronike se obično proizvode iz nestandardnih dijelova. Posljedica toga je laboratorijska proizvodnja elektroničkih učinskih pretvarača, povećani troškovi i smanjena pouzdanost. Jedan od mogućih načina prevladavanja ovih poteškoća jest integralni pristup projektiranju i proizvodnji sustava energetske elektronike. Posebice se razmatraju tehnologije razvijene za integraciju učinskih krugova i motora. Ove tehnologije uključuju postupke planarne metalizacije za izbjegavanje žičanih vodova, integraciju pasivnih dijelova učinskih krugova, integraciju strujnih senzora, te razvoj takvih poluvodičkih komponenata koje olakšavaju integraciju i poboljšavaju karakteristike uređaja. Pri projektiranju, zbog multidisciplinarnih aspekata integriranih sustava, treba primijeniti nužne CAD alate. Razvoj integriranih modula elektroničkih učinskih pretvarača (engl. integrated power electronics modules, IPEM) ilustriran je na dvije primjene: (1) istosmjerni pretvarač snage 1 kW u asimetričnom polumosnom spoju i (2) elektromotorni pogon snage 1 . . . 3 kW za grijanje, ventilaciju i klimatizaciju (engl. heating, ventilation and air conditioning, HVAC). Na IPEM-u objašnjeni su projektantski i tehnološki kompromisi električkog i toplinskog projekta