Ab initio study of semiconducting carbon nanotubes adsorbed on the Si(100) surface: diameter- and registration-dependent atomic configurations and electronic properties

We present a first-principles study of semiconducting carbon nanotubes adsorbed on the unpassivated Si(100) surface. We have found metallicity for the combined system caused by n-doping of the silicon slab representing the surface by the SWNT. We confirm this metallicity for nanotubes of different diameters and chiral angles, and find the effect to be independent of the orientation of the nanotubes on the surface. We also present adsorption energetics and configurations which show semiconducting SWNTs farther apart from the surface and transferring less charge, in comparison with metallic SWNTs of similar diameter.Comment: Replaces old (Jan 2006) version; more supporting material. 11 pages, 8 figures, 7 table

Bromophenyl functionalization of carbon nanotubes : an ab initio study

We study the thermodynamics of bromophenyl functionalization of carbon nanotubes with respect to diameter and metallic/insulating character using density-functional theory (DFT). On one hand, we show that the activation energy for the grafting of a bromophenyl molecule onto a semiconducting zigzag nanotube ranges from 0.73 eV to 0.76 eV without any clear trend with respect to diameter within numerical accuracy. On the other hand, the binding energy of a single bromophenyl molecule shows a clear diameter dependence and ranges from 1.51 eV for a (8,0) zigzag nanotube to 0.83 eV for a (20,0) zigzag nanotube. This is in part explained by the transition from sp2 to sp3 bonding occurring to a carbon atom of a nanotube when a phenyl is grafted to it and the fact that smaller nanotubes are closer to a sp3 hybridization than larger ones due to increased curvature. Since a second bromophenyl unit can attach without energy barrier next to an isolated grafted unit, they are assumed to exist in pairs. The para configuration is found to be favored for the pairs and their binding energy decreases with increasing diameter, ranging from 4.34 eV for a (7,0) nanotube to 2.27 eV for a (29,0) nanotube. An analytic form for this radius dependence is derived using a tight binding hamiltonian and first order perturbation theory. The 1/R^2 dependance obtained (where R is the nanotube radius) is verified by our DFT results within numerical accuracy. Finally, metallic nanotubes are found to be more reactive than semiconducting nanotubes, a feature that can be explained by a non-zero density of states at the Fermi level for metallic nanotubes.Comment: 7 pages, 5 figures and 3 table

Large Magnetic Susceptibility Anisotropy of Metallic Carbon Nanotubes

Through magnetic linear dichroism spectroscopy, the magnetic susceptibility anisotropy of metallic single-walled carbon nanotubes has been extracted and found to be 2-4 times greater than values for semiconducting single-walled carbon nanotubes. This large anisotropy is consistent with our calculations and can be understood in terms of large orbital paramagnetism of electrons in metallic nanotubes arising from the Aharonov-Bohm-phase-induced gap opening in a parallel field. We also compare our values with previous work for semiconducting nanotubes, which confirm a break from the prediction that the magnetic susceptibility anisotropy increases linearly with the diameter.Comment: 4 pages, 4 figure

Exciton Energy Transfer in Pairs of Single-Walled Carbon Nanotubes

We studied the exciton energy transfer in pairs of semiconducting nanotubes using high-resolution optical microscopy and spectroscopy on the nanoscale. Photoluminescence from large band gap nanotubes within bundles is observed with spatially varying intensities due to distance-dependent internanotube transfer. The range of efficient energy transfer is found to be limited to a few nanometers because of competing fast nonradiative relaxation responsible for low photoluminescence quantum yield

Process for separating metallic from semiconducting single-walled carbon nanotubes

A method for separating semiconducting single-walled carbon nanotubes from metallic single-walled carbon nanotubes is disclosed. The method utilizes separation agents that preferentially associate with semiconducting nanotubes due to the electrical nature of the nanotubes. The separation agents are those that have a planar orientation, .pi.-electrons available for association with the surface of the nanotubes, and also include a soluble portion of the molecule. Following preferential association of the separation agent with the semiconducting nanotubes, the agent/nanotubes complex is soluble and can be solubilized with the solution enriched in semiconducting nanotubes while the residual solid is enriched in metallic nanotubes

Chemical doping of individual semiconducting carbon-nanotube ropes

We report the effects of potassium doping on the conductance of individual semiconducting single-walled carbon nanotube ropes. We are able to control the level of doping by reversibly intercalating and de-intercalating potassium. Potassium doping changes the carriers in the ropes from holes to electrons. Typical values for the carrier density are found to be ∼100–1000 electrons/μm. The effective mobility for the electrons is μeff∼20–60 cm2 V-1 s-1, a value similar to that reported for the hole effective mobility in nanotubes [R. Martel et al., Appl. Phys. Lett. 73, 2447 (1998)]

Electronic Devices Based on Purified Carbon Nanotubes Grown By High Pressure Decomposition of Carbon Monoxide

The excellent properties of transistors, wires, and sensors made from single-walled carbon nanotubes (SWNTs) make them promising candidates for use in advanced nanoelectronic systems. Gas-phase growth procedures such as the high pressure decomposition of carbon monoxide (HiPCO) method yield large quantities of small diameter semiconducting SWNTs, which are ideal for use in nanoelectronic circuits. As-grown HiPCO material, however, commonly contains a large fraction of carbonaceous impurities that degrade properties of SWNT devices. Here we demonstrate a purification, deposition, and fabrication process that yields devices consisting of metallic and semiconducting nanotubes with electronic characteristics vastly superior to those of circuits made from raw HiPCO. Source-drain current measurements on the circuits as a function of temperature and backgate voltage are used to quantify the energy gap of semiconducting nanotubes in a field effect transistor geometry. This work demonstrates significant progress towards the goal of producing complex integrated circuits from bulk-grown SWNT material.Comment: 6 pages, 4 figures, to appear in Nature Material

Orbital and spin magnetic moments of transforming 1D iron inside metallic and semiconducting carbon nanotubes

The orbital and spin magnetic properties of iron inside transforming metallic and semiconducting 1D carbon nanotube hybrids are studied by means of local x-ray magnetic circular dichroism (XMCD) and bulk superconducting quantum interference device (SQUID) measurements. Nanotube hybrids are initially ferrocene filled single-walled carbon nanotubes (SWCNT) of different metallicities. After a high temperature nanochemical reaction ferrocene molecules react with each other to form iron nano clusters. We show that the ferrocenes molecular orbitals interact differently with the SWCNT of different metallicities without significant XMCD response. This XMCD at various temperatures and magnetic fields reveals that the orbital and/or spin magnetic moments of the encapsulated iron are altered drastically as the transformation to 1D Fe nanoclusters takes place. The orbital and spin magnetic moments are both found to be larger in filled semiconducting nanotubes than in the metallic sample. This could mean that the magnetic polarizations of the encapsulated material is dependent on the metallicity of the tubes. From a comparison between the iron 3d magnetic moments and the bulk magnetism measured by SQUID, we conclude that the delocalized magnetisms dictate the magnetic properties of these 1D hybrid nanostructures