Methodology for standard cell compliance and detailed placement for triple patterning lithography

As the feature size of semiconductor process further scales to sub-16nm technology node, triple patterning lithography (TPL) has been regarded one of the most promising lithography candidates. M1 and contact layers, which are usually deployed within standard cells, are most critical and complex parts for modern digital designs. Traditional design flow that ignores TPL in early stages may limit the potential to resolve all the TPL conflicts. In this paper, we propose a coherent framework, including standard cell compliance and detailed placement to enable TPL friendly design. Considering TPL constraints during early design stages, such as standard cell compliance, improves the layout decomposability. With the pre-coloring solutions of standard cells, we present a TPL aware detailed placement, where the layout decomposition and placement can be resolved simultaneously. Our experimental results show that, with negligible impact on critical path delay, our framework can resolve the conflicts much more easily, compared with the traditional physical design flow and followed layout decomposition

Lithography aware physical design and layout optimization for manufacturability

textAs technology continues to scale down, semiconductor manufacturing with 193nm lithography is greatly challenging because the required half pitch size is beyond the resolution limit. In order to bridge the gap between design requirements and manufacturing limitations, various resolution enhancement techniques have been proposed to avoid potentially problematic patterns and to improve product yield. In addition, co-optimization between design performance and manufacturability can further provide flexible and significant yield improvement, and it has become necessary for advanced technology nodes. This dissertation presents the methodologies to consider the lithography impact in different design stages to improve layout manufacturability. Double Patterning Lithography (DPL) has been a promising solution for sub-22nm node volume production. Among DPL techniques, self-aligned double patterning (SADP) provides good overlay controllability when two masks are not aligned perfectly. However, SADP process places several limitations on design flexibility and still exists many challenges in physical design stages. Starting from the early design stage, we analyze the standard cell designs and construct a set of SADP-aware cell placement candidates, and show that placement legalization based on this SADP awareness information can effectively resolve DPL conflicts. In the detailed routing stage, we propose a new routing cost formulation based on SADP-compliant routing guidelines, and achieve routing and layout decomposition simultaneously. In the case that limited routing perturbation is allowed, we propose a post-routing flow based on lithography simulation and lithography-aware design rules. Both routing methods, one in detailed routing stage and one in post routing stage, reduce DPL conflicts/violations significantly with negligible wire length impact. In the layout decomposition stage, layout modification is restricted and thus the manufacturability is even harder to guaranteed. By taking the advantage of complementary lithography, we present a new layout decomposition approach with e-beam cutting, which optimizes SADP overlay error and e-beam lithography throughput simultaneously. After the mask layout is defined, optical proximity correction (OPC) is one of the resolution enhancement techniques that is commonly required to compensate the image distortion from the lithography process. We propose an inverse lithography technique to solve the OPC problem considering design target and process window co-optimization. Our mask optimization is pixel based and thus can enable better contour fidelity. In the final physical verification stage, a complex and time-consuming lithography simulation needs to be performed to identify faulty patterns. We provide a classification method based on support vector machine and principle component analysis that detects lithographic hotspots efficiently and accurately.Electrical and Computer Engineerin

Standard cell optimization and physical design in advanced technology nodes

Integrated circuits (ICs) are at the heart of modern electronics, which rely heavily on the state-of-the-art semiconductor manufacturing technology. The key to pushing forward semiconductor technology is IC feature-size miniaturization. However, this brings ever-increasing design complexities and manufacturing challenges to the $340 billion semiconductor industry. The manufacturing of two-dimensional layout on high-density metal layers depends on complex design-for-manufacturing techniques and sophisticated empirical optimizations, which introduces huge amounts of turnaround time and yield loss in advanced technology nodes. Our study reveals that unidirectional layout design can significantly reduce the manufacturing complexities and improve the yield, which is becoming increasingly adopted in semiconductor industry [61, 89]. The lithography printing of unidirectional layout can be tightly controlled using advanced patterning techniques, such as self-aligned double and quadruple patterning. Despite the manufacturing benefits, unidirectional layout leads to more restrictive solution space and brings significant impacts on the IC design automation ow for routing closure. Notably, unidirectional routing limits the standard cell pin accessibility, which further exacerbates the resource competitions during routing. Moreover, for post-routing optimization, traditional redundant-via insertion has become obsolete under unidirectional routing style, which makes the yield enhancement task extremely challenging. Regardless of complex multiple patterning and design-for-manufacturing approaches, mask optimization through resolution enhancement techniques remains as the key strategy to improve the yield of the semiconductor manufacturing processes. Among them, Sub-Resolution Assist Feature (SRAF) generation is a very important method to improve lithographic process windows. Model-based SRAF generation has been widely used to achieve high accuracy but it is time-consuming and hard to obtain consistent SRAFs. This dissertation proposes novel CAD algorithms and methodologies for standard cell optimization and physical design in advanced technology nodes, which ultimately reduces the design cycle and manufacturing cost of IC design. First, a standard cell pin access optimization engine is proposed to evaluate the pin accessibility of a given standard cell library. We further propose novel pin access planning techniques and concurrent pin access optimizations to efficiently resolve the routing resource competitions, which generates much better routing solutions than state-of-the-art, manufacturing-friendly routers. To systematically improve the manufacturing yield in the post-routing stage, a global optimization engine has been introduced for redundant local-loop insertion considering advanced manufacturing constraints. Finally, we propose the first machine learning-based framework for fast yet consistent SRAF generation with the high quality of results.Electrical and Computer Engineerin

EDA Solutions for Double Patterning Lithography

Expanding the optical lithography to 32-nm node and beyond is impossible using existing single exposure systems. As such, double patterning lithography (DPL) is the most promising option to generate the required lithography resolution, where the target layout is printed with two separate imaging processes. Among different DPL techniques litho-etch-litho-etch (LELE) and self-aligned double patterning (SADP) methods are the most popular ones, which apply two complete exposure lithography steps and an exposure lithography followed by a chemical imaging process, respectively. To realize double patterning lithography, patterns located within a sub-resolution distance should be assigned to either of the imaging sub-processes, so-called layout decomposition. To achieve the optimal design yield, layout decomposition problem should be solved with respect to characteristics and limitations of the applied DPL method. For example, although patterns can be split between the two sub-masks in the LELE method to generate conflict free masks, this pattern split is not favorable due to its sensitivity to lithography imperfections such as the overlay error. On the other hand, pattern split is forbidden in SADP method because it results in non-resolvable gap failures in the final image. In addition to the functional yield, layout decomposition affects parametric yield of the designs printed by double patterning. To deal with both functional and parametric challenges of DPL in dense and large layouts, EDA solutions for DPL are addressed in this thesis. To this end, we proposed a statistical method to determine the interconnect width and space for the LELE method under the effect of random overlay error. In addition to yield maximization and achieving near-optimal trade-off between different parametric requirements, the proposed method provides valuable insight about the trend of parametric and functional yields in future technology nodes. Next, we focused on self-aligned double patterning and proposed layout design and decomposition methods to provide SADP-compatible layouts and litho-friendly decomposed layouts. Precisely, a grid-based ILP formulation of SADP decomposition was proposed to avoid decomposition conflicts and improve overall printability of layout patterns. To overcome the limited applicability of this ILP-based method to fully-decomposable layouts, a partitioning-based method is also proposed which is faster than the grid-based ILP decomposition method too. Moreover, an A∗-based SADP-aware detailed routing method was proposed which performs detailed routing and layout decomposition simultaneously to avoid litho-limited layout configurations. The proposed router preserves the uniformity of pattern density between the two sub-masks of the SADP process. We finally extended our decomposition method for double patterning to triple patterning and formulated SATP decomposition by integer linear programming. In addition to conventional minimum width and spacing constraints, the proposed decomposition method minimizes the mandrel-trim co-defined edges and maximizes the layout features printed by structural spacers to achieve the minimum pattern distortion. This thesis is one of the very early researches that investigates the concept of litho-friendliness in SADP-aware layout design and decomposition. Provided by experimental results, the proposed methods advance prior state-of-the-art algorithms in various aspects. Precisely, the suggested SADP decomposition methods improve total length of sensitive trim edges, total EPE and overall printability of attempted designs. Additionally, our SADP-detailed routing method provides SADP-decomposable layouts in which trim patterns are highly robust to lithography imperfections. The experimental results for SATP decomposition show that total length of overlay-sensitive layout patterns, total EPE and overall printability of the attempted designs are also improved considerably by the proposed decomposition method. Additionally, the methods in this PhD thesis reveal several insights for the upcoming technology nodes which can be considered for improving the manufacturability of these nodes

Regular cell design approach considering lithography-induced process variations

The deployment delays for EUVL, forces IC design to continue using 193nm wavelength lithography with innovative and costly techniques in order to faithfully print sub-wavelength features and combat lithography induced process variations. The effect of the lithography gap in current and upcoming technologies is to cause severe distortions due to optical diffraction in the printed patterns and thus degrading manufacturing yield. Therefore, a paradigm shift in layout design is mandatory towards more regular litho-friendly cell designs in order to improve line pattern resolution. However, it is still unclear the amount of layout regularity that can be introduced and how to measure the benefits and weaknesses of regular layouts. This dissertation is focused on searching the degree of layout regularity necessary to combat lithography variability and outperform the layout quality of a design. The main contributions that have been addressed to accomplish this objective are: (1) the definition of several layout design guidelines to mitigate lithography variability; (2) the proposal of a parametric yield estimation model to evaluate the lithography impact on layout design; (3) the development of a global Layout Quality Metric (LQM) including a Regularity Metric (RM) to capture the degree of layout regularity of a layout implementation and; (4) the creation of different layout architectures exploiting the benefits of layout regularity to outperform line-pattern resolution, referred as Adaptive Lithography Aware Regular Cell Designs (ALARCs). The first part of this thesis provides several regular layout design guidelines derived from lithography simulations so that several important lithography related variation sources are minimized. Moreover, a design level methodology, referred as gate biasing, is proposed to overcome systematic layout dependent variations, across-field variations and the non-rectilinear gate effect (NRG) applied to regular fabrics by properly configuring the drawn transistor channel length. The second part of this dissertation proposes a lithography yield estimation model to predict the amount of lithography distortion expected in a printed layout due to lithography hotspots with a reduced set of lithography simulations. An efficient lithography hotspot framework to identify the different layout pattern configurations, simplify them to ease the pattern analysis and classify them according to the lithography degradation predicted using lithography simulations is presented. The yield model is calibrated with delay measurements of a reduced set of identical test circuits implemented in a CMOS 40nm technology and thus actual silicon data is utilized to obtain a more realistic yield estimation. The third part of this thesis presents a configurable Layout Quality Metric (LQM) that considering several layout aspects provides a global evaluation of a layout design with a single score. The LQM can be leveraged by assigning different weights to each evaluation metric or by modifying the parameters under analysis. The LQM is here configured following two different set of partial metrics. Note that the LQM provides a regularity metric (RM) in order to capture the degree of layout regularity applied in a layout design. Lastly, this thesis presents different ALARC designs for a 40nm technology using different degrees of layout regularity and different area overheads. The quality of the gridded regular templates is demonstrated by automatically creating a library containing 266 cells including combinational and sequential cells and synthesizing several ITC'99 benchmark circuits. Note that the regular cell libraries only presents a 9\% area penalty compared to the 2D standard cell designs used for comparison and thus providing area competitive designs. The layout evaluation of benchmark circuits considering the LQM shows that regular layouts can outperform other 2D standard cell designs depending on the layout implementation.Los continuos retrasos en la implementación de la EUVL, fuerzan que el diseño de IC se realice mediante litografía de longitud de onda de 193 nm con innovadoras y costosas técnicas para poder combatir variaciones de proceso de litografía. La gran diferencia entre la longitud de onda y el tamaño de los patrones causa severas distorsiones debido a la difracción óptica en los patrones impresos y por lo tanto degradando el yield. En consecuencia, es necesario realizar un cambio en el diseño de layouts hacia diseños más regulares para poder mejorar la resolución de los patrones. Sin embargo, todavía no está claro el grado de regularidad que se debe introducir y como medir los beneficios y los perjuicios de los diseños regulares. El objetivo de esta tesis es buscar el grado de regularidad necesario para combatir las variaciones de litografía y mejorar la calidad del layout de un diseño. Las principales contribuciones para conseguirlo son: (1) la definición de diversas reglas de diseño de layout para mitigar las variaciones de litografía; (2) la propuesta de un modelo para estimar el yield paramétrico y así evaluar el impacto de la litografía en el diseño de layout; (3) el diseño de una métrica para analizar la calidad de un layout (LQM) incluyendo una métrica para capturar el grado de regularidad de un diseño (RM) y; (4) la creación de diferentes tipos de layout explotando los beneficios de la regularidad, referidos como Adaptative Lithography Aware Regular Cell Designs (ALARCs). La primera parte de la tesis, propone las diversas reglas de diseño para layouts regulares derivadas de simulaciones de litografía de tal manera que las fuentes de variación de litografía son minimizadas. Además, se propone una metodología de diseño para layouts regulares, referida como "gate biasing" para contrarrestar las variaciones sistemáticas dependientes del layout, las variaciones en la ventana de proceso del sistema litográfico y el efecto de puerta no rectilínea para configurar la longitud del canal del transistor correctamente. La segunda parte de la tesis, detalla el modelo de estimación del yield de litografía para predecir mediante un número reducido de simulaciones de litografía la cantidad de distorsión que se espera en un layout impreso debida a "hotspots". Se propone una eficiente metodología que identifica los distintos patrones de un layout, los simplifica para facilitar el análisis de los patrones y los clasifica en relación a la degradación predecida mediante simulaciones de litografía. El modelo de yield se calibra utilizando medidas de tiempo de un número reducido de idénticos circuitos de test implementados en una tecnología CMOS de 40nm y de esta manera, se utilizan datos de silicio para obtener una estimación realista del yield. La tercera parte de este trabajo, presenta una métrica para medir la calidad del layout (LQM), que considera diversos aspectos para dar una evaluación global de un diseño mediante un único valor. La LQM puede ajustarse mediante la asignación de diferentes pesos para cada métrica de evaluación o modificando los parámetros analizados. La LQM se configura mediante dos conjuntos de medidas diferentes. Además, ésta incluye una métrica de regularidad (RM) para capturar el grado de regularidad que se aplica en un diseño. Finalmente, esta disertación presenta los distintos diseños ALARC para una tecnología de 40nm utilizando diversos grados de regularidad y diferentes impactos en área. La calidad de estos diseños se demuestra creando automáticamente una librería de 266 celdas incluyendo celdas combinacionales y secuenciales y, sintetizando diversos circuitos ITC'99. Las librerías regulares solo presentan un 9% de impacto en área comparado con diseños de celdas estándar 2D y por tanto proponiendo diseños competitivos en área. La evaluación de los circuitos considerando la LQM muestra que los diseños regulares pueden mejorar otros diseños 2D dependiendo de la implementación del layout

Algorithmic techniques for physical design : macro placement and under-the-cell routing

With the increase of chip component density and new manufacturability constraints imposed by modern technology nodes, the role of algorithms for electronic design automation is key to the successful implementation of integrated circuits. Two of the critical steps in the physical design flows are macro placement and ensuring all design rules are honored after timing closure. This thesis proposes contributions to help in these stages, easing time-consuming manual steps and helping physical design engineers to obtain better layouts in reduced turnaround time. The first contribution is under-the-cell routing, a proposal to systematically connect standard cell components via lateral pins in the lower metal layers. The aim is to reduce congestion in the upper metal layers caused by extra metal and vias, decreasing the number of design rule violations. To allow cells to connect by abutment, a standard cell library is enriched with instances containing lateral pins in a pre-selected sharing track. Algorithms are proposed to maximize the numbers of connections via lateral connection by mapping placed cell instances to layouts with lateral pins, and proposing local placement modifications to increase the opportunities for such connections. Experimental results show a significant decrease in the number of pins, vias, and in number of design rule violations, with negligible impact on wirelength and timing. The second contribution, done in collaboration with eSilicon (a leading ASIC design company), is the creation of HiDaP, a macro placement tool for modern industrial designs. The proposed approach follows a multilevel scheme to floorplan hierarchical blocks, composed of macros and standard cells. By exploiting RTL information available in the netlist, the dataflow affinity between these blocks is modeled and minimized to find a macro placement with good wirelength and timing properties. The approach is further extended to allow additional engineer input, such as preferred macro locations, and also spectral and force methods to guide the floorplanning search. Experimental results show that the layouts generated by HiDaP outperforms those obtained by a state-of-the-art EDA physical design software, with similar wirelength and better timing when compared to manually designed tape-out ready macro placements. Layouts obtained by HiDaP have successfully been brought to near timing closure with one to two rounds of small modifications by physical design engineers. HiDaP has been fully integrated in the design flows of the company and its development remains an ongoing effort.A causa de l'increment de la densitat de components en els xip i les noves restriccions de disseny imposades pels últims nodes de fabricació, el rol de l'algorísmia en l'automatització del disseny electrònic ha esdevingut clau per poder implementar circuits integrats. Dos dels passos crucials en el procés de disseny físic és el placement de macros i assegurar la correcció de les regles de disseny un cop les restriccions de timing del circuit són satisfetes. Aquesta tesi proposa contribucions per ajudar en aquests dos reptes, facilitant laboriosos passos manuals en el procés i ajudant als enginyers de disseny físic a obtenir millors resultats en menys temps. La primera contribució és el routing "under-the-cell", una proposta per connectar cel·les estàndard usant pins laterals en les capes de metall inferior de manera sistemàtica. L'objectiu és reduir la congestió en les capes de metall superior causades per l'ús de metall i vies, i així disminuir el nombre de violacions de regles de disseny. Per permetre la connexió lateral de cel·les, estenem una llibreria de cel·les estàndard amb dissenys que incorporen connexions laterals. També proposem modificacions locals al placement per permetre explotar aquest tipus de connexions més sovint. Els resultats experimentals mostren una reducció significativa en el nombre de pins, vies i nombre de violacions de regles de disseny, amb un impacte negligible en wirelength i timing. La segona contribució, desenvolupada en col·laboració amb eSilicon (una empresa capdavantera en disseny ASIC), és el desenvolupament de HiDaP, una eina de macro placement per a dissenys industrials actuals. La proposta segueix un procés multinivell per fer el floorplan de blocks jeràrquics, formats per macros i cel·les estàndard. Mitjançant la informació RTL disponible en la netlist, l'afinitat de dataflow entre els mòduls es modela i minimitza per trobar macro placements amb bones propietats de wirelength i timing. La proposta també incorpora la possibilitat de rebre input addicional de l'enginyer, com ara suggeriments de les posicions de les macros. Finalment, també usa mètodes espectrals i de forçes per guiar la cerca de floorplans. Els resultats experimentals mostren que els dissenys generats amb HiDaP són millors que els obtinguts per eines comercials capdavanteres de EDA. Els resultats també mostren que els dissenys presentats poden obtenir un wirelength similar i millor timing que macro placements obtinguts manualment, usats per fabricació. Alguns dissenys obtinguts per HiDaP s'han dut fins a timing-closure en una o dues rondes de modificacions incrementals per part d'enginyers de disseny físic. L'eina s'ha integrat en el procés de disseny de eSilicon i el seu desenvolupament continua més enllà de les aportacions a aquesta tesi.Postprint (published version

Algorithmic techniques for physical design : macro placement and under-the-cell routing

With the increase of chip component density and new manufacturability constraints imposed by modern technology nodes, the role of algorithms for electronic design automation is key to the successful implementation of integrated circuits. Two of the critical steps in the physical design flows are macro placement and ensuring all design rules are honored after timing closure. This thesis proposes contributions to help in these stages, easing time-consuming manual steps and helping physical design engineers to obtain better layouts in reduced turnaround time. The first contribution is under-the-cell routing, a proposal to systematically connect standard cell components via lateral pins in the lower metal layers. The aim is to reduce congestion in the upper metal layers caused by extra metal and vias, decreasing the number of design rule violations. To allow cells to connect by abutment, a standard cell library is enriched with instances containing lateral pins in a pre-selected sharing track. Algorithms are proposed to maximize the numbers of connections via lateral connection by mapping placed cell instances to layouts with lateral pins, and proposing local placement modifications to increase the opportunities for such connections. Experimental results show a significant decrease in the number of pins, vias, and in number of design rule violations, with negligible impact on wirelength and timing. The second contribution, done in collaboration with eSilicon (a leading ASIC design company), is the creation of HiDaP, a macro placement tool for modern industrial designs. The proposed approach follows a multilevel scheme to floorplan hierarchical blocks, composed of macros and standard cells. By exploiting RTL information available in the netlist, the dataflow affinity between these blocks is modeled and minimized to find a macro placement with good wirelength and timing properties. The approach is further extended to allow additional engineer input, such as preferred macro locations, and also spectral and force methods to guide the floorplanning search. Experimental results show that the layouts generated by HiDaP outperforms those obtained by a state-of-the-art EDA physical design software, with similar wirelength and better timing when compared to manually designed tape-out ready macro placements. Layouts obtained by HiDaP have successfully been brought to near timing closure with one to two rounds of small modifications by physical design engineers. HiDaP has been fully integrated in the design flows of the company and its development remains an ongoing effort.A causa de l'increment de la densitat de components en els xip i les noves restriccions de disseny imposades pels últims nodes de fabricació, el rol de l'algorísmia en l'automatització del disseny electrònic ha esdevingut clau per poder implementar circuits integrats. Dos dels passos crucials en el procés de disseny físic és el placement de macros i assegurar la correcció de les regles de disseny un cop les restriccions de timing del circuit són satisfetes. Aquesta tesi proposa contribucions per ajudar en aquests dos reptes, facilitant laboriosos passos manuals en el procés i ajudant als enginyers de disseny físic a obtenir millors resultats en menys temps. La primera contribució és el routing "under-the-cell", una proposta per connectar cel·les estàndard usant pins laterals en les capes de metall inferior de manera sistemàtica. L'objectiu és reduir la congestió en les capes de metall superior causades per l'ús de metall i vies, i així disminuir el nombre de violacions de regles de disseny. Per permetre la connexió lateral de cel·les, estenem una llibreria de cel·les estàndard amb dissenys que incorporen connexions laterals. També proposem modificacions locals al placement per permetre explotar aquest tipus de connexions més sovint. Els resultats experimentals mostren una reducció significativa en el nombre de pins, vies i nombre de violacions de regles de disseny, amb un impacte negligible en wirelength i timing. La segona contribució, desenvolupada en col·laboració amb eSilicon (una empresa capdavantera en disseny ASIC), és el desenvolupament de HiDaP, una eina de macro placement per a dissenys industrials actuals. La proposta segueix un procés multinivell per fer el floorplan de blocks jeràrquics, formats per macros i cel·les estàndard. Mitjançant la informació RTL disponible en la netlist, l'afinitat de dataflow entre els mòduls es modela i minimitza per trobar macro placements amb bones propietats de wirelength i timing. La proposta també incorpora la possibilitat de rebre input addicional de l'enginyer, com ara suggeriments de les posicions de les macros. Finalment, també usa mètodes espectrals i de forçes per guiar la cerca de floorplans. Els resultats experimentals mostren que els dissenys generats amb HiDaP són millors que els obtinguts per eines comercials capdavanteres de EDA. Els resultats també mostren que els dissenys presentats poden obtenir un wirelength similar i millor timing que macro placements obtinguts manualment, usats per fabricació. Alguns dissenys obtinguts per HiDaP s'han dut fins a timing-closure en una o dues rondes de modificacions incrementals per part d'enginyers de disseny físic. L'eina s'ha integrat en el procés de disseny de eSilicon i el seu desenvolupament continua més enllà de les aportacions a aquesta tesi

Design for Manufacturing in IC Fabrication: Mask Cost, Circuit Performance and Convergence

Ph.DDOCTOR OF PHILOSOPH