6,844 research outputs found

    Baseband analog front-end and digital back-end for reconfigurable multi-standard terminals

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    Multimedia applications are driving wireless network operators to add high-speed data services such as Edge (E-GPRS), WCDMA (UMTS) and WLAN (IEEE 802.11a,b,g) to the existing GSM network. This creates the need for multi-mode cellular handsets that support a wide range of communication standards, each with a different RF frequency, signal bandwidth, modulation scheme etc. This in turn generates several design challenges for the analog and digital building blocks of the physical layer. In addition to the above-mentioned protocols, mobile devices often include Bluetooth, GPS, FM-radio and TV services that can work concurrently with data and voice communication. Multi-mode, multi-band, and multi-standard mobile terminals must satisfy all these different requirements. Sharing and/or switching transceiver building blocks in these handsets is mandatory in order to extend battery life and/or reduce cost. Only adaptive circuits that are able to reconfigure themselves within the handover time can meet the design requirements of a single receiver or transmitter covering all the different standards while ensuring seamless inter-interoperability. This paper presents analog and digital base-band circuits that are able to support GSM (with Edge), WCDMA (UMTS), WLAN and Bluetooth using reconfigurable building blocks. The blocks can trade off power consumption for performance on the fly, depending on the standard to be supported and the required QoS (Quality of Service) leve

    Systematic Comparison of HF CMOS Transconductors

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    Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties. Based on bandwidth considerations, simple V-I kernels with few or no internal nodes are preferred. In a systematic way, virtually all simple kernels published in literature are generated. This is done in two steps: 1) basic 3-terminal transconductors are covered and 2) then five different techniques to combine two of them in a composite V-I kernel. In order to compare transconductors in a fair way, a normalized signal-to-noise ratio (NSNR) is defined. The basic V-I kernels and the five classes of composite V-I kernels are then compared, leading to insight in the key mechanisms that affect NSNR. Symbolic equations are derived to estimate NSNR, while simulations with more advanced MOSFET models verify the results. The results show a strong tradeoff between NSNR and transconductance tuning range. Resistively generated MOSFETs render the best NSNR results and are robust for future technology developments

    Low-power transceiver design for mobile wireless chemical biological sensors

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    The design of a smart integrated chemical sensor system that will enhance sensor performance and compatibility to Ad hoc network architecture remains a challenge. This work involves the design of a Transceiver for a mobile chemical sensor. The transceiver design integrates all building blocks on-chip, including a low-noise amplifier with an input-matching network, a Voltage Controlled Oscillator with injection locking, Gilbert cell mixers, and a Class E Power amplifier making it as a single-chip transceiver. This proposed low power 2GHz transceiver has been designed in TSMC 0.35~lm CMOS process using Cadence electronic design automation tools. Post layout HSPICE simulation indicates that Design meets the separation of noise levels by 52dB and 42dB in transmitter and receiver respectively with power consumption of 56 mW and 38 mW in transmit and receive mode

    Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

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    The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

    Low-Power Wireless Medical Systems and Circuits for Invasive and Non-Invasive Applications

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    Approximately 75% of the health care yearly budget of public health systems around the world is spent on the treatment of patients with chronic diseases. This, along with advances on the medical and technological fields has given rise to the use of preventive medicine, resulting on a high demand of wireless medical systems (WMS) for patient monitoring and drug safety research. In this dissertation, the main design challenges and solutions for designing a WMS are addressed from system-level, using off-the-shell components, to circuit implementation. Two low-power oriented WMS aiming to monitor blood pressure of small laboratory animals (implantable) and cardiac-activity (12-lead electrocardiogram) of patients with chronic diseases (wearable) are presented. A power consumption vs. lifetime analysis to estimate the monitoring unit lifetime for each application is included. For the invasive/non-invasive WMS, in-vitro test benches are used to verify their functionality showing successful communication up to 2.1 m/35 m with the monitoring unit consuming 0.572 mA/33 mA from a 3 V/4.5 V power supply, allowing a two-year/ 88-hour lifetime in periodic/continuous operation. This results in an improvement of more than 50% compared with the lifetime commercial products. Additionally, this dissertation proposes transistor-level implementations of an ultra-low-noise/low-power biopotential amplifier and the baseband section of a wireless receiver, consisting of a channel selection filter (CSF) and a variable gain amplifier (VGA). The proposed biopotential amplifier is intended for electrocardiogram (ECG)/ electroencephalogram (EEG)/ electromyogram (EMG) monitoring applications and its architecture was designed focused on improving its noise/power efficiency. It was implemented using the ON-SEMI 0.5 µm standard process with an effective area of 360 µm2. Experimental results show a pass-band gain of 40.2 dB (240 mHz - 170 Hz), input referred noise of 0.47 Vrms, minimum CMRR of 84.3 dBm, NEF of 1.88 and a power dissipation of 3.5 µW. The CSF was implemented using an active-RC 4th order inverse-chebyshev topology. The VGA provides 30 gain steps and includes a DC-cancellation loop to avoid saturation on the sub-sequent analog-to-digital converter block. Measurement results show a power consumption of 18.75 mW, IIP3 of 27.1 dBm, channel rejection better than 50 dB, gain variation of 0-60dB, cut-off frequency tuning of 1.1-2.29 MHz and noise figure of 33.25 dB. The circuit was implemented in the standard IBM 0.18 µm CMOS process with a total area of 1.45 x 1.4 mm^(2). The presented WMS can integrate the proposed biopotential amplifier and baseband section with small modifications depending on the target signal while using the low-power-oriented algorithm to obtain further power optimization

    Low Voltage Low Power Analogue Circuits Design

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    Disertační práce je zaměřena na výzkum nejběžnějších metod, které se využívají při návrhu analogových obvodů s využití nízkonapěťových (LV) a nízkopříkonových (LP) struktur. Tyto LV LP obvody mohou být vytvořeny díky vyspělým technologiím nebo také využitím pokročilých technik návrhu. Disertační práce se zabývá právě pokročilými technikami návrhu, především pak nekonvenčními. Mezi tyto techniky patří využití prvků s řízeným substrátem (bulk-driven - BD), s plovoucím hradlem (floating-gate - FG), s kvazi plovoucím hradlem (quasi-floating-gate - QFG), s řízeným substrátem s plovoucím hradlem (bulk-driven floating-gate - BD-FG) a s řízeným substrátem s kvazi plovoucím hradlem (quasi-floating-gate - BD-QFG). Práce je také orientována na možné způsoby implementace známých a moderních aktivních prvků pracujících v napěťovém, proudovém nebo mix-módu. Mezi tyto prvky lze začlenit zesilovače typu OTA (operational transconductance amplifier), CCII (second generation current conveyor), FB-CCII (fully-differential second generation current conveyor), FB-DDA (fully-balanced differential difference amplifier), VDTA (voltage differencing transconductance amplifier), CC-CDBA (current-controlled current differencing buffered amplifier) a CFOA (current feedback operational amplifier). Za účelem potvrzení funkčnosti a chování výše zmíněných struktur a prvků byly vytvořeny příklady aplikací, které simulují usměrňovací a induktanční vlastnosti diody, dále pak filtry dolní propusti, pásmové propusti a také univerzální filtry. Všechny aktivní prvky a příklady aplikací byly ověřeny pomocí PSpice simulací s využitím parametrů technologie 0,18 m TSMC CMOS. Pro ilustraci přesného a účinného chování struktur je v disertační práci zahrnuto velké množství simulačních výsledků.The dissertation thesis is aiming at examining the most common methods adopted by analog circuits' designers in order to achieve low voltage (LV) low power (LP) configurations. The capability of LV LP operation could be achieved either by developed technologies or by design techniques. The thesis is concentrating upon design techniques, especially the non–conventional ones which are bulk–driven (BD), floating–gate (FG), quasi–floating–gate (QFG), bulk–driven floating–gate (BD–FG) and bulk–driven quasi–floating–gate (BD–QFG) techniques. The thesis also looks at ways of implementing structures of well–known and modern active elements operating in voltage–, current–, and mixed–mode such as operational transconductance amplifier (OTA), second generation current conveyor (CCII), fully–differential second generation current conveyor (FB–CCII), fully–balanced differential difference amplifier (FB–DDA), voltage differencing transconductance amplifier (VDTA), current–controlled current differencing buffered amplifier (CC–CDBA) and current feedback operational amplifier (CFOA). In order to confirm the functionality and behavior of these configurations and elements, they have been utilized in application examples such as diode–less rectifier and inductance simulations, as well as low–pass, band–pass and universal filters. All active elements and application examples have been verified by PSpice simulator using the 0.18 m TSMC CMOS parameters. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of structures.

    Novel Floating General Element Simulators Using CBTA

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    In this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed. The presented circuit can realize floating FDNR, inductor, capacitor or resistor depending on the passive component selection. Since the passive elements are all grounded, this circuit is suitable for fully integrated circuit design. The circuit does not require any component matching conditions, and it has a good sensitivity performance with respect to tracking errors. Moreover, the proposed FDNR, inductance, capacitor and resistor simulator can be tuned electronically by changing the biasing current of the CBTA or can be controlled through the grounded resistor or capacitor. The high-order frequency dependent element simulator circuit is also presented. Depending on the passive component selection, it realizes high-order floating circuit defining as V(s) = snAI(s) or V(s) = s-nBI(s). The proposed floating FDNR simulator circuit and floating high-order frequency dependent element simulator circuit are demonstrated by using PSPICE simulation for 0.25 μm, level 7, TSMC CMOS technology parameters
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