A Survey on Wireless Sensor Network Security

Wireless sensor networks (WSNs) have recently attracted a lot of interest in the research community due their wide range of applications. Due to distributed nature of these networks and their deployment in remote areas, these networks are vulnerable to numerous security threats that can adversely affect their proper functioning. This problem is more critical if the network is deployed for some mission-critical applications such as in a tactical battlefield. Random failure of nodes is also very likely in real-life deployment scenarios. Due to resource constraints in the sensor nodes, traditional security mechanisms with large overhead of computation and communication are infeasible in WSNs. Security in sensor networks is, therefore, a particularly challenging task. This paper discusses the current state of the art in security mechanisms for WSNs. Various types of attacks are discussed and their countermeasures presented. A brief discussion on the future direction of research in WSN security is also included.Comment: 24 pages, 4 figures, 2 table

Scalable and Secure Aggregation in Distributed Networks

We consider the problem of computing an aggregation function in a \emph{secure} and \emph{scalable} way. Whereas previous distributed solutions with similar security guarantees have a communication cost of $O(n^3)$, we present a distributed protocol that requires only a communication complexity of $O(n\log^3 n)$, which we prove is near-optimal. Our protocol ensures perfect security against a computationally-bounded adversary, tolerates $(1/2-\epsilon)n$ malicious nodes for any constant $1/2 > \epsilon > 0$ (not depending on $n$), and outputs the exact value of the aggregated function with high probability

Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation

Recent advances in quantum information processing with trapped ions have demonstrated the need for new ion trap architectures capable of holding and manipulating chains of many (>10) ions. Here we present the design and detailed characterization of a new linear trap, microfabricated with scalable complementary metal-oxide-semiconductor (CMOS) techniques, that is well-suited to this challenge. Forty-four individually controlled DC electrodes provide the many degrees of freedom required to construct anharmonic potential wells, shuttle ions, merge and split ion chains, precisely tune secular mode frequencies, and adjust the orientation of trap axes. Microfabricated capacitors on DC electrodes suppress radio-frequency pickup and excess micromotion, while a top-level ground layer simplifies modeling of electric fields and protects trap structures underneath. A localized aperture in the substrate provides access to the trapping region from an oven below, permitting deterministic loading of particular isotopic/elemental sequences via species-selective photoionization. The shapes of the aperture and radio-frequency electrodes are optimized to minimize perturbation of the trapping pseudopotential. Laboratory experiments verify simulated potentials and characterize trapping lifetimes, stray electric fields, and ion heating rates, while measurement and cancellation of spatially-varying stray electric fields permits the formation of nearly-equally spaced ion chains.Comment: 17 pages (including references), 7 figure

Deterministic integration of quantum dots into on-chip multi-mode interference beamsplitters using in-situ electron beam lithography

The development of multi-node quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of pre-selected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multi-mode interference beamsplitter via in-situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with $g^{(2)}(0) = 0.13\pm 0.02$. Due to its high patterning resolution as well as spectral and spatial control, in-situ electron beam lithography allows for integration of pre-selected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way towards multi-node, fully integrated quantum photonic chips.Comment: 20 pages, 5 figure