Printed dose-recording tag based on organic complementary circuits and ferroelectric nonvolatile memories.

We have demonstrated a printed electronic tag that monitors time-integrated sensor signals and writes to nonvolatile memories for later readout. The tag is additively fabricated on flexible plastic foil and comprises a thermistor divider, complementary organic circuits, and two nonvolatile memory cells. With a supply voltage below 30 V, the threshold temperatures can be tuned between 0 °C and 80 °C. The time-temperature dose measurement is calibrated for minute-scale integration. The two memory bits are sequentially written in a thermometer code to provide an accumulated dose record

Printed analogue filter structures

The authors report progress in conductive lithographic film (CLF) technology, which uses the offset lithographic printing process to form electrically conductive patterns on flexible substrates. Networks of planar passive components and interconnects fabricated simultaneously via the CLF process form notch filter networks at 85 kHz

Mono-Type TFT Logic Architectures for Low Power Systems on Panel Applications

This paper introduces novel 7-T pseudo-CMOS for enhancement mode and 6-T pseudo-CMOS for depletion mode inverter circuit architectures. The designs are built around mono-type of TFTs and consume less power consumption than existing 4-T pseudo-CMOS circuits. In addition, they provide steep transfer curves, along with embedded control for compensation of device parameter variations. Analysis of the transient behavior for the various circuit architectures is presented, providing quantitative insight into capacitive loading taking into account the effects of overlap capacitances

Variation-based design of an AM demodulator in a printed complementary organic technology

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A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed-loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135° under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%