A Case Study in CMOS Design Scaling for Analog Applications: The Ringamp LDO

As CMOS process nodes scale to smaller feature sizes, process optimizations are made to achieve improvements in digital circuit performance, such as increasing speed and memory, while decreasing power consumption. Unfortunately for analog design, these optimizations usually come at the expense of poorer transistor performance, such as reduced small signal output resistance and increased channel length modulation. The ring amplifier has been proposed as a digital solution to the analog scaling problem, by configuring digital inverters to function as analog amplifiers through deadzone biasing. As digital inverters naturally scale, the ring amplifier is a promising area of exploration for analog design. This work presents a ring amplifier scaling study by demonstration of scaling an output capacitor-less, ring amplifier based low-dropout voltage regulator designed in a standard 180 nm CMOS process down to a standard 90 nm CMOS process

Energy Efficient Pipeline ADCs Using Ring Amplifiers

Pipeline ADCs require accurate amplification. Traditionally, an operational transconductance amplifier (OTA) configured as a switched-capacitor (SC) amplifier performs such amplification. However, traditional OTAs limit the power efficiency of ADCs since they require high quiescent current for slewing and bandwidth. In addition, it is difficult to design low-voltage OTAs in modern, scaled CMOS. The ring amplifier is an energy efficient and high output swing alternative to an OTA for SC circuits which is basically a three-stage inverter amplifier stabilized in a feedback configuration. However, the conventional ring amplifier requires external biases, which makes the ring amplifier less practical when we consider process, supply voltage, and temperature (PVT) variation. In this dissertation, three types of innovative ring amplifiers are presented and verified with state-of-the-art energy efficient pipeline ADCs. These new ring amplifiers overcome the limitations of the conventional ring amplifier and further improve energy efficiency. The first topic of this dissertation is a self-biased ring amplifier that makes the ring amplifier more practical and power efficient, while maintaining the benefits of efficient slew-based charging and an almost rail-to-rail output swing. In addition, the ring amplifiers are also used as comparators in the 1.5b sub-ADCs by utilizing the unique characteristics of the ring amplifier. This removes the need for dedicated comparators in sub-ADCs, thus further reducing the power consumption of the ADC. The prototype 10.5b 100 MS/s comparator-less pipeline ADC with the self-biased ring amplifiers has measured SNDR, SNR and SFDR of 56.6 dB (9.11b), 57.5 dB and 64.7 dB, respectively, and consumes 2.46 mW, which results in Walden Figure-of-Merit (FoM) of 46.1 fJ/ conversion∙step. The second topic is a fully-differential ring amplifier, which solves the problems of single-ended ring amplifiers while maintaining the benefits of the single-ended ring amplifiers. This differential ring-amplifier is applied in a 13b 50 MS/s SAR-assisted pipeline ADC. Furthermore, an improved capacitive DAC switching method for the first stage SAR reduces the DAC linearity errors and switching energy. The prototype ADC achieves measured SNDR, SNR and SFDR of 70.9 dB (11.5b), 71.3 dB and 84.6 dB, respectively, and consumes 1 mW. This measured performance is equivalent to Walden and Schreier FoMs of 6.9 fJ/conversion∙step and 174.9 dB, respectively. Finally, a four-stage fully-differential ring amplifier improves the small-signal gain to over 90 dB without compromising speed. In addition, a new auto-zero noise filtering method reduces noise without consuming additional power. This is more area efficient than the conventional auto-zero noise folding reduction technique. A systematic mismatch free SAR CDAC layout method is also presented. The prototype 15b 100 MS/s calibration-free SAR-assisted pipeline ADC using the four-stage ring amplifier achieves 73.2 dB SNDR (11.9b) and 90.4 dB SFDR with a 1.1 V supply. It consumes 2.3 mW resulting in Schreier FoM of 176.6 dB.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138759/1/yonglim_1.pd

Design of Inverter Based CMOS Amplifiers in Deep Nanoscale Technologies

In this work, it is proposed a fully differential ring amplifier topology with a deadzone voltage created by a CMOS resistor with a biasing circuit to increase the robustness over PVT variations. The study focuses on analyzing the performance of the ring amplifier over process, temperature, and supply voltage variations, in order to guarantee a viable industrial employment in a 7 nm FinFET CMOS technology node for being used as residue amplifier in ADCs. A ring amplifier is a small modular amplifier, derived from a ring oscillator. It is simple enough that it can quickly be designed using only a few inverters, capacitors, and switches. It can amplify with rail-to-rail output swing, competently charge large capacitive loads using slew-based charging, and scale well in performance according to process trends. In typical process corner, a gain of 72 dB is achieved with a settling time of 150 ps. Throughout the study, the proposed topology is compared with others presented in literature showing better results over corners and presenting a faster response. The proposed topology isn’t yet suitable for industry use, because it presents one corner significantly slower than the rest, namely process corner FF 125 °C, and process corner FS -40 °C with a small oscillation throughout the entire amplification period. Nevertheless, it proved itself to be a promising technique, showing a high gain and a fast settling without oscillation phase, with room for improvement.Neste trabalho, é proposta uma topologia de ring amplifier com a deadzone a ser criada através de uma resistência CMOS com um circuito de polarização para aumentar a robustez para as variações PVT. O estudo foca-se em analisar a performance do ring amplifier nas variações de processo, temperatura e tensão de alimentação, de forma a garantir um uso viável em indústria na tecnologia de 7 nm FinFET CMOS, para ser usado como amplificador de resíduo em ADCs. Um ring amplifier é um pequeno amplificador modular, derivado do ring oscillator. É simples o suficiente para ser facilmente projetado usando apenas poucos inversores, condensadores e interruptores. Consegue amplificar com rail-to-rail output swing, carregar grandes cargas capacitivas com carregamento slew-based e escalar bem em termos de performance de acordo com o processo. No typical process corner, foi obtido um ganho de 72 dB com um tempo de estabilização de 150 ps. Durante o estudo, a topologia proposta é comparada com outras presentes na literatura mostrando melhores resultados over corners e apresentando uma resposta mais rápida. A topologia proposta ainda não está preparada para uso industrial uma vez que apresenta um corner significativamente mais lento que os restantes, nomeadamente, process corner FF 125 °C, e outro process corner, FS -40 °C, com uma pequena oscilação durante todo o período de amplificação. Todavia, provou ser uma técnica promissora, apresentando um ganho elevado e uma rápida estabilização sem fase de oscilação, com espaço para melhoria

Injection seeded, diode pumped regenerative ring Nd:YAG amplifier for spaceborne laser ranging technology development

A small, all solid state, regenerative ring amplifier designed as a prototype for space application is discussed. Novel features include dual side pumping of the Nd:YAG crystal and a triangular ring cavity design which minimizes the number of optical components and losses. The amplifier is relatively small (3 ns round trip time) even though standard optical elements are employed. The ring regeneratively amplifies a 100 ps single pulse by approximately 10(exp 5) at a repetition rate of 10 to 100 Hz. The amplifier is designed to be injection seeded with a pulsed, 100 ps laser diode at 1.06 microns, but another Nd:YAG laser system supplying higher pulse energies was employed for laboratory experiment. This system is a prototype laser oscillator for the Geoscience Laser Ranging System (GLRS) platform. Results on measurements of beam quality, astigmatism, and gain are given

An economical arterial-pulse-wave transducer

Transducer records arterial pulses externally. Device uses thin plastic membrane which is fluid coupled to pressure sensitive transistor. Transistor is connected to amplifier which, in turn, is connected to recorder. End section is threaded to accept suitable holder and contains pressure relief vent allowing transistor to sense only pressure levels greater than atmospheric

A Ringamp-Assisted, Output Capacitor-less Analog CMOS Low-Dropout Voltage Regulator

Continued advancements in state-of-the-art integrated circuits have furthered trends toward higher computational performance and increased functionality within smaller circuit area footprints, all while improving power efficiencies to meet the demands of mobile and battery-powered applications. A significant portion of these advancements have been enabled by continued scaling of CMOS technology into smaller process node sizes, facilitating faster digital systems and power optimized computation. However, this scaling has degraded classic analog amplifying circuit structures with reduced voltage headroom and lower device output resistance; and thus, lower available intrinsic gain. This work investigates these trends and their impact for fine-grain Low-Dropout (LDO) Voltage Regulators, leading to a presented design methodology and implementation of a state-of-the-art Ringamp-Assisted, Output Capacitor-less Analog CMOS LDO Voltage Regulator capable of both power scaling and process node scaling for general SoC applications

Dynamic biasing for ring amplification

New amplifier architectures are presented using non-traditional methods of biasing. Time-based dynamic biasing and signal-based dynamic biasing are discussed in the context of new architectures. This includes a new form of ring amplification with a dynamic deadzone, allowing for a structure whose coarse path does not consume static power.Keywords: dynamic biasing, ring amplifier, ring amplificatio