Development of correction algorithm for pulsed terahertz computed tomography (THz-CT)

For last couple of decades, there has been a considerable improvement in Terahertz (THz) science, technology, and imaging. In particular, the technique of 3-D computed tomography has been adapted to the THz range. However, it has been widely recognized that a fundamental limitation to THz computed tomography imaging is the refractive effects of the sample under study. The finite refractive index of materials in the THz range can severally refract THz beams which probe the internal structure of a sample during the acquisition of tomography data. Refractive effects lead to anomalously high local absorption coefficients in the reconstructed image near the material’s boundaries. Three refractive effects are identified: (a) Fresnel reflection power losses at the boundaries, (b) an increase in path length of the probing THz radiation, and (c) steering of the THz beam by the sample such that the emerging THz radiation is no longer collected by the THz detector. In addition, the finite size of the THz beam dominates the measured THz transmission when the edges of the sample are probed using THz tomography. These boundary phenomena can dominate in the reconstructed THz-CT images making it difficult to distinguish any hidden finer structural defect(s) inside the material. In this dissertation, an algorithm has been developed to remove these refractive and finite beam size effects from THz-CT reconstructed images. The algorithm is successfully implemented on cylindrical shaped objects. A longer term goal of the research is to study the internal structure of natural cork wine stoppers by pulsed Terahertz tomography (THz-CT). It has previously been shown that THz imaging can detect the internal structure of natural cork. Moreover, the internal structure of natural cork stoppers dominates the diffusion of gasses and liquids through the cork. By using THz computed tomography, one can recreate a 3D image of the sample’s internal structure which could then be used to predict non-destructively the diffusion properties of the cork. However, refractive and boundary effects which arise in the THz tomographic image masks the presence of the cork’s internal structure. Applying the correction algorithms which are developed in this dissertation to natural cork stoppers suppresses the refractive and boundary anomalies enabling better visualization of the cork’s internal structure

Material and Process Engineering for Bulk Single Crystal Growth of High Performance Scintillator Potassium Calcium Iodide

Protection against threats of nuclear terrorism relies on the deployment of an enormous number of radiation detection devices with energy resolution to differentiate the radiological signatures of special nuclear materials amongst naturally occurring radiation and other nuisance sources. The capabilities of these devices rely upon the availability of high performance scintillator and semiconductor materials which provide useful responses in the presence of radiation. So far, few materials have been developed to a level that can supplant the use of underperforming NaI:Tl [thallium doped sodium iodide] crystals in the field due to their high cost and/or low yields of production. KCaI3[potassium calcium tri-iodide] doped with divalent europium has shown significant promise as a high performance scintillator and development to explore its potential for large scale production is necessary. KCaI3 crystallizes into an orthorhombic symmetry and exhibits a moderate amount of anisotropy in thermal expansion between its melting point of 524°C [Celsius] and room temperature. Production of large single crystals up to 1.5” in diameter can be facilitated through the vertical Bridgman method of melt growth using pyrolytic carbon-coated ampoules which eliminate cracking upon cooling. Low dopant amounts of 0.5-1.0 at% of Eu can achieve excellent energy resolutions of 3-4% at 662 keV while minimizing deleterious self-absorption effects, making it comparable to the highest performing scintillators discovered. A purpose-built multi-ampoule growth station was constructed and through the course of the investigation, a process was developed whereby several high quality, uncracked KCaI3 crystals at 1” in diameter could be grown simultaneously, in parallel, using a randomly oriented self-seeded approach. The demonstration shows great promise as a potential pathway to reduce the costs of scintillator production that is limited to a large number of boules at the 1”- 2” diameter size. Furthermore, KCaI3 possesses internal radioactivity due to the presence of naturally abundant 40K [potassium – 40] and will restrict its utility to applications where an elevated background is not critical. A significant obstacle to production of KCaI3 crystals doped with europium is the uniform distribution of the activator which can result in concentration gradients in bulk crystals and degrade spectroscopic performance

Alice: The Rosetta Ultraviolet Imaging Spectrograph

We describe the design, performance and scientific objectives of the NASA-funded ALICE instrument aboard the ESA Rosetta asteroid flyby/comet rendezvous mission. ALICE is a lightweight, low-power, and low-cost imaging spectrograph optimized for cometary far-ultraviolet (FUV) spectroscopy. It will be the first UV spectrograph to study a comet at close range. It is designed to obtain spatially-resolved spectra of Rosetta mission targets in the 700-2050 A spectral band with a spectral resolution between 8 A and 12 A for extended sources that fill its ~0.05 deg x 6.0 deg field-of-view. ALICE employs an off-axis telescope feeding a 0.15-m normal incidence Rowland circle spectrograph with a concave holographic reflection grating. The imaging microchannel plate detector utilizes dual solar-blind opaque photocathodes (KBr and CsI) and employs a 2 D delay-line readout array. The instrument is controlled by an internal microprocessor. During the prime Rosetta mission, ALICE will characterize comet 67P/Churyumov-Gerasimenko's coma, its nucleus, and the nucleus/coma coupling; during cruise to the comet, ALICE will make observations of the mission's two asteroid flyby targets and of Mars, its moons, and of Earth's moon. ALICE has already successfully completed the in-flight commissioning phase and is operating normally in flight. It has been characterized in flight with stellar flux calibrations, observations of the Moon during the first Earth fly-by, and observations of comet Linear T7 in 2004 and comet 9P/Tempel 1 during the 2005 Deep Impact comet-collision observing campaignComment: 11 pages, 7 figure

Submicron Systems Architecture Project : Semiannual Technical Report

The Mosaic C is an experimental fine-grain multicomputer based on single-chip nodes. The Mosaic C chip includes 64KB of fast dynamic RAM, processor, packet interface, ROM for bootstrap and self-test, and a two-dimensional selftimed router. The chip architecture provides low-overhead and low-latency handling of message packets, and high memory and network bandwidth. Sixty-four Mosaic chips are packaged by tape-automated bonding (TAB) in an 8 x 8 array on circuit boards that can, in turn, be arrayed in two dimensions to build arbitrarily large machines. These 8 x 8 boards are now in prototype production under a subcontract with Hewlett-Packard. We are planning to construct a 16K-node Mosaic C system from 256 of these boards. The suite of Mosaic C hardware also includes host-interface boards and high-speed communication cables. The hardware developments and activities of the past eight months are described in section 2.1. The programming system that we are developing for the Mosaic C is based on the same message-passing, reactive-process, computational model that we have used with earlier multicomputers, but the model is implemented for the Mosaic in a way that supports finegrain concurrency. A process executes only in response to receiving a message, and may in execution send messages, create new processes, and modify its persistent variables before it either exits or becomes dormant in preparation for receiving another message. These computations are expressed in an object-oriented programming notation, a derivative of C++ called C+-. The computational model and the C+- programming notation are described in section 2.2. The Mosaic C runtime system, which is written in C+-, provides automatic process placement and highly distributed management of system resources. The Mosaic C runtime system is described in section 2.3

Contributions à l’intégration des procédés de fabrication et d'encapsulation d’un commutateur MEMS RF ohmique

Abstract : This dissertation presents studies to resolve process integration problems in the fabrication of packaged radio frequency microelectromechanical system (RF MEMS) ohmic switches with a Au-Ru contact metallurgy and Al-Ge eutectic wafer bonding for wafer-level packaging (WLP). While unpackaged RF MEMS switches have shown promising attributes poor reliability has limited their development into practical products, demanding compatibility with a hermetic sealing solution. The first article, titled ‘Exploring Ru compatibility with Al-Ge eutectic wafer bonding,’ and its supplemental material examine bond impacts associated with the refractory metal ruthenium (Ru). The compatibility of Ru with a wafer bonding process has been virtually unexplored. The main text of this section outlines the results of blanket deposition annealing experiments with Ru, Al and Ge configurations to address concerns of ternary alloy poisoning, melt wettability on Ru, and Ru as a diffusing contaminant in Al and Ge. A brief exploration of the composition process window for Al-Ge alloys contaminated with Ru is made from available phase diagrams, and strong bond outcomes with real product wafers with Ru contacts are presented. The article concludes that Ru has high compatibility within an expected narrow composition process window of marginally reduced melting temperature for Al-Ge alloy. Supplemental material addresses additional process integration problems in the real bond process associated with Ru: alumina thickening, Ru contamination and Al hillock aggravation. These are challenges for the Al surface, which progressively loses bonding ability with Ge through the fabrication process, and can be obviated with unprocessed bonding Al without Ru exposure. The second article, titled ‘Mitigating re-entrant etch profile undercut in Au etch with an aqua regia variant,’ and its supplemental material examine processed Au outcomes and bond-on-contact consequences primarily inflicted on Au. Thermally-stable Au metallization to Si for microswitch contacts in packaged devices is a considerable integration challenge. The main text of this section outlines an etch profile investigation of Au metallization stack variants with adhesion layers to discriminate delamination-based undercutting from galvanic undercutting when using an aqua regia-based solution, showing which mechanism is applicable for this etchant. A brief examination of the electrochemistry of the etchant is made to explain the unusual outcome of mitigated galvanic undercut confirmed by this analysis, with delamination control eliminating or minimizing undercut for thick Au films. In the supplemental material Au surface evolution is tracked across the fabrication process, with the wafer bonding thermal cycle being deemed most significant. Au hillocking and delamination are the primary challenges, and segmentation of Au features is a leading mitigation option that increases the impact of any Au undercut. Together these chapters develop an improved understanding of contact/bond compatibility. Necessary and promising future work for RF MEMS microfabrication and packaging is outlined at the conclusion of this dissertation.Cette thèse présente des études visant à résoudre les problèmes d’intégration de procédés dans la fabrication de commutateurs radiofréquence ohmiques de systèmes microélectromécaniques de (RF MEMS) encapsulés par une métallurgie de contact Au-Ru et un collage eutectique de gaufres Al-Ge pour l'encapsulation au niveau des gaufres (Wafer-Level Packaging, WLP). Bien que les commutateurs MEMS RF non encapsules aient montré des attributs prometteurs, leur faible fiabilité a limité leur développement en produits pratiques, exigeant la compatibilité avec une solution de collage hermétique. Le premier article, intitulé ‹‹Exploring Ru compatibility with Al-Ge eutectic wafer bonding››, et son supplément examinent les effets de liaison associés au ruthénium (Ru), un métal réfractaire. La compatibilité du Ru avec un procédé de collage de gaufres a été très par inexplorée. Le texte principal de cette section présente les résultats d'expériences de recuit des dépôts pleine plaque avec des configurations de Ru, Al et Ge pour répondre aux préoccupations concernant l'empoisonnement des alliages ternaires, la mouillabilité de la masse fondue sur le Ru, et le Ru en tant que contaminant diffusant dans Al et Ge. Une brève exploration de la fenêtre de procédé de composition pour les alliages Al-Ge contaminés par Ru est faite à partir des diagrammes de phase disponibles, et des résultats de collage fort avec des gaufres de produits réels avec des contacts Ru sont présentés. L'article conclut que Ru a une compatibilité élevée dans une fenêtre de procédé de composition étroite attendue de température de fusion marginalement réduite pour l'alliage Al-Ge. Des documents complémentaires traitent de problèmes d'intégration autres dans le procédé de collage réel associés au Ru: épaississement de l'alumine, contamination par le Ru et aggravation de la topographie d'Al. Il s'agit de défis pour la surface de l'aluminium, qui perd progressivement sa capacité de collage avec le Ge au cours du procédé de fabrication, et qui peuvent être évités avec de l'aluminium de collage non traité sans exposition au Ru. Le deuxième article, intitulé ‹‹Mitigating re-entrant etch profile undercut in Au etch with an aqua regia variant››, et son matériel supplémentaire examinent les résultats de la gravure de l'Au et les conséquences de la liaison sur le contact principalement infligées à l'Au. La métallisation thermiquement stable de l'Au sur le Si pour les contacts dans les dispositifs encapsulés est un défi d'intégration considérable. Le texte principal de cette section décrit une étude sur le profil de gravure de variantes d'empilement de métallisation Au avec des couches d'adhérence pour distinguer la sous-coupe basée sur la délamination de la sous-coupe galvanique lors de l'utilisation d'une solution à base d'eau régale, montrant quel mécanisme est applicable pour ce réactif de gravure. Un bref examen de l'électrochimie de l'agent de gravure est effectué pour expliquer le résultat inhabituel de la surgravure galvanique atténuée confirmée par cette analyse, le contrôle de la délamination éliminant ou minimisant la surgravure pour les films d'Au épais. Dans les documents complémentaires, l'évolution de la surface de l'or est suivie tout au long du procédé de fabrication, le cycle thermique de collage des gaufres étant considéré comme le plus important. La formation de bosses et le délaminage de l'or sont les principaux défis à relever, et la segmentation des caractéristiques de l'or est une option d'atténuation importante qui augmente l'impact de toute contre-dépouille de l'or. Ensemble, ces chapitres permettent de mieux comprendre la compatibilité contact/liaison. Les travaux futurs nécessaires et prometteurs pour la microfabrication et le conditionnement des MEMS RF sont présentés en conclusion de cette thèse

The Three-Dimensional Circumstellar Environment of SN 1987A

We present the detailed construction and analysis of the most complete map to date of the circumstellar environment around SN 1987A, using ground and space-based imaging from the past 16 years. PSF-matched difference-imaging analyses of data from 1988 through 1997 reveal material between 1 and 28 ly from the SN. Careful analyses allows the reconstruction of the probable circumstellar environment, revealing a richly-structured bipolar nebula. An outer, double-lobed ``Peanut,'' which is believed to be the contact discontinuity between red supergiant and main sequence winds, is a prolate shell extending 28 ly along the poles and 11 ly near the equator. Napoleon's Hat, previously believed to be an independent structure, is the waist of this Peanut, which is pinched to a radius of 6 ly. Interior to this is a cylindrical hourglass, 1 ly in radius and 4 ly long, which connects to the Peanut by a thick equatorial disk. The nebulae are inclined 41\degr south and 8\degr east of the line of sight, slightly elliptical in cross section, and marginally offset west of the SN. From the hourglass to the large, bipolar lobes, echo fluxes suggest that the gas density drops from 1--3 cm^{-3} to >0.03 cm^{-3}, while the maximum dust-grain size increases from ~0.2 micron to 2 micron, and the Si:C dust ratio decreases. The nebulae have a total mass of ~1.7 Msun. The geometry of the three rings is studied, suggesting the northern and southern rings are located 1.3 and 1.0 ly from the SN, while the equatorial ring is elliptical (b/a < 0.98), and spatially offset in the same direction as the hourglass.Comment: Accepted for publication in the ApJ Supplements. 38 pages in apjemulate format, with 52 figure

Experimental Investigation of a Broadband High-Temperature Superconducting Terahertz Mixer Operating at Temperatures Between 40 and 77 K

© 2017, Springer Science+Business Media, LLC. This paper presents a systematic investigation of a broadband thin-film antenna-coupled high-temperature superconducting (HTS) terahertz (THz) harmonic mixer at relatively high operating temperature from 40 to 77 K. The mixer device chip was fabricated using the CSIRO established step-edge YBa2Cu3O7-x (YBCO) Josephson junction technology, packaged in a well-designed module and cooled in a temperature adjustable cryocooler. Detailed experimental characterizations were carried out for the broadband HTS mixer at both the 200 and 600 GHz bands in harmonic mixing mode. The DC current-voltage characteristics (IVCs), bias current condition, local oscillator (LO) power requirement, frequency response, as well as conversion efficiency under different bath temperatures were thoroughly investigated for demonstrating the frequency down-conversion performance

Low-Cost, Water Pressure Sensing and Leakage Detection Using Micromachined Membranes

This work presents the only known SOI membrane approach, using Microelectromechanical systems (MEMS) fabrication techniques, to address viable water leakage sensing requirements at low cost. In this research, membrane thickness and diameter are used in concert to target specific stiffness values that will result in targeted operational pressure ranges of approximately 0-120 psi. A MEMS membrane device constructed using silicon-on-insulator (SOI) wafers, has been tested and packaged for the water environment. MEMS membrane arrays will be used to determine operational pressure range by bursting.Two applications of these SOI membranes in aqueous environment are investigated in this research. The first one is water pressure sensing. We demonstrate that robustness of these membranes depends on their thickness and surface area. Their mechanical strength and robustness against applied pressure are determined using Finite Element Analysis (FEA). The mechanical response of a membrane pressure sensor is determined by physical factors such as surface area, thickness and material properties. The second application of this device is water leak detection. In devices such as pressure sensors, microvalves and micropumps, membranes can be subjected to immense pressure that causes them to fail or burst. However, this event can be used to indicate the precise pressure level that malfunction occurred. These membrane arrays can be used to determine pressure values by bursting. We discuss the background information related to the proposed device: MEMS fabrication processes (especially related to proposed device), common MEMS materials, general micromachining process steps, packaging and wire bonding techniques, and common micromachined pressure sensors. Besides, FEA on SOLIDWORKS simulation module is utilized to understand membrane sensitivity and robustness. In addition, we focus on theories supporting the simulated results. We also discuss the device fabrication process, which consists of the tested device’s fabrication process, Deep Reactive Ion Etching (DRIE) for membrane formation, two different realizable fabrication technique (depending on sensing material) of sensing element, metal contact pads, and connectors deposition. In addition, a brief description and operation procedures of the device fabrication tools are provided as well. We also include detailed electrical and mechanical testing procedures and the collected data