Accelerated degradation modeling considering long-range dependence and unit-to-unit variability

Accelerated degradation testing (ADT) is an effective way to evaluate the reliability and lifetime of highly reliable products. Existing studies have shown that the degradation processes of some products are non-Markovian with long-range dependence due to the interaction with environments. Besides, the degradation processes of products from the same population generally vary from each other due to various uncertainties. These two aspects bring great difficulty for ADT modeling. In this paper, we propose an improved ADT model considering both long-range dependence and unit-to-unit variability. To be specific, fractional Brownian motion (FBM) is utilized to capture the long-range dependence in the degradation process. The unit-to-unit variability among multiple products is captured by a random variable in the degradation rate function. To ensure the accuracy of the parameter estimations, a novel statistical inference method based on expectation maximization (EM) algorithm is proposed, in which the maximization of the overall likelihood function is achieved. The effectiveness of the proposed method is fully verified by a simulation case and a microwave case. The results show that the proposed model is more suitable for ADT modeling and analysis than existing ADT models

Prognostics health management: perspectives in engineering systems reliability prognostics

The Prognostic Health Management (PHM) has been asserting itself as the most promising methodology to enhance the effective reliability and availability of a product or system during its life-cycle conditions by detecting current and approaching failures, thus, providing mitigation of the system risks with reduced logistics and support costs. However, PHM is at an early stage of development, it also expresses some concerns about possible shortcomings of its methods, tools, metrics and standardization. These factors have been severely restricting the applicability of PHM and its adoption by the industry. This paper presents a comprehensive literature review about the PHM main general weaknesses. Exploring the research opportunities present in some recent publications, are discussed and outlined the general guide-lines for finding the answer to these issues.(undefined

Two-stage shape memory alloy identification based on the Hammerstein - Wiener model

from the two stages was obtained for a specific shape memory alloy wire and for specific environmental conditions. This data was used in the modeling process. The final model consists of a combination of the models from the two stages, which represent the behavior of the shape memory alloy actuator where the input signal is the pulse-width modulation signal and the output signal are the position of the actuator. Our results indicate that our model has a very similar response to the behavior of the real actuator. This model can be used to tune different control algorithms, simulate the entry system before manufacture and test on real devices.The research leading to these results has received funding from the Exoesqueleto para Diagnostico y Asistencia en Tareas de Manipulación (DPI2016-75346-R) Spanish research project and from RoboCity2030-DIH-CM, Madrid Robotics Digital Innovation Hub, S2018/NMT-4331, funded by Programas de Actividades I + D en la Comunidad de Madrid and cofunded by Structural Funds of the EU

Reliability Analysis of Nanocrystal Embedded High-k Nonvolatile Memories

The evolution of the MOSFET technology has been driven by the aggressive shrinkage of the device size to improve the device performance and to increase the circuit density. Currently, many research demonstrated that the continuous polycrystalline silicon film in the floating-gate dielectric could be replaced with nanocrystal (nc) embedded high-k thin film to minimize the charge loss due to the defective thin tunnel dielectric layer. This research deals with both the statistical aspect of reliability and electrical aspect of reliability characterization as well. In this study, the Zr-doped HfO2 (ZrHfO) high-k MOS capacitors, which separately contain the nanocrystalline zinc oxide (nc-ZnO), silicon (nc-Si), Indium Tin Oxide (nc-ITO) and ruthenium (nc-Ru) are studied on their memory properties, charge transportation mechanism, ramp-relax test, accelerated life tests, failure rate estimation and thermal effect on the above reliability properties. C-V hysteresis result show that the amount of charges trapped in nanocrystal embedded films is in the order of nc-ZnO\u3enc-Ru\u3enc-Si~nc-ITO, which might probably be influenced by the EOT of each sample. In addition, all the results show that the nc-ZnO embedded ZrHfO non-volatile memory capacitor has the best memory property and reliability. In this study, the optimal burn-in time for this kind of device has been also investigated with nonparametric Bayesian analysis. The results show the optimal burn-in period for nc-ZnO embedded high-k device is 5470s with the maximum one-year mission reliability

System identification and adaptive current balancing ON/OFF control of DC-DC switch mode power converter

PhD ThesisReliability becomes more and more important in industrial application of Switch Mode Power Converters (SMPCs). A poorly performing power supply in a power system can influence its operation and potentially compromise the entire system performance in terms of efficiency. To maintain a high reliability, high performance SMPC effective control is necessary for regulating the output of the SMPC system. However, an uncertainty is a key factor in SMPC operation. For example, parameter variations can be caused by environmental effects such as temperature, pressure and humidity. Usually, fixed controllers cannot respond optimally and generate an effective signal to compensate the output error caused by time varying parameter changes. Therefore, the stability is potentially compromised in this case. To resolve this problem, increasing interest has been shown in employing online system identification techniques to estimate the parameter values in real time. Moreover, the control scheme applied after system identification is often called “adaptive control” due to the control signal selfadapting to the parameter variation by receiving the information from the system identification process. In system identification, the Recursive Least Square (RLS) algorithm has been widely used because it is well understood and easy to implement. However, despite the popularity of RLS, the high computational cost and slow convergence speed are the main restrictions for use in SMPC applications. For this reason, this research presents an alternative algorithm to RLS; Fast Affline Projection (FAP). Detailed mathematical analysis proves the superior computational efficiency of this algorithm. Moreover, simulation and experiment result verify this unique adaptive algorithm has improved performance in terms of computational cost and convergence speed compared with the conventional RLS methods. Finally, a novel adaptive control scheme is designed for optimal control of a DC-DC buck converter during transient periods. By applying the proposed adaptive algorithm, the control signal can be successfully employed to change the ON/OFF state of the power transistor in the DC-DC buck converter to improve the dynamic behaviour. Simulation and experiment result show the proposed adaptive control scheme significantly improves the transient response of the buck converter, particularly during an abrupt load change conditio

Journal of Telecommunications and Information Technology, 2010, nr 1

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Characterization and modeling of low-frequency noise in Hf-based high -kappa dielectrics for future cmos applications

The International Technology Roadmap for Semiconductors outlines the need for high-K dielectric based gate-oxide Metal Oxide Semiconductor Field Effect Transistors for sub-45 nm technology nodes. Gate oxides of hafnium seem to be the nearest and best alternative for silicon dioxide, when material, thermal and structural properties are considered. Usage of poly-Si as a gate electrode material degrades the performance of the device and hence gate stacks based on metal gate electrodes are gaining high interest. Though a substantial improvement in the performance has been achieved with these changes, reliability issues are a cause of concern. For analog and mixed-signal applications, low-frequency (I /f~ noise is a major reliability factor. Also in recent years. low frequency noise diagnostics has become a powerful tool for device performance and reliability characterization. This dissertation work demonstrates the necessity of gate stack engineering for achieving a low I/f noise performance. Changes in the material and process parameters of the devices, impact the 1/f noise behavior. The impact of 1/f noise on gate technology and processing parameters xvere identified and investigated. The thickness and the quality of the interfacial oxide, the nitridation effects of the layers, high-K oxide, bulk properties of the high-K layer. percentage of hafnium content in the high-K, post deposition anneal (PDA) treatments, effects of gate electrode material (poly-silicon. fully silicided or metal). Gate electrode processing are investigated in detail. The role of additional interfaces and bulk layers of the gate stack is understood. The dependence of low-frequency noise on high and low temperatures was also investigated. A systematic and a deeper understanding of these parameters on 1/f noise behavior are deduced which also forms the basis for improved physics-based 1/f noise modeling. The model considers the effect of the interfacial layer and also temperature, based on tunneling based thermally activated model. The simulation results of improved drain-current noise model agree well with the experimentally calculated values