Semiclassical and relaxation limits of bipolar quantum hydrodynamic model

The global in-time semiclassical and relaxation limits of the bipolar quantum hydrodynamic model for semiconductors are investigated in $R^3$. We prove that the unique strong solution converges globally in time to the strong solution of classical bipolar hydrodynamical equation in the process of semiclassical limit and to that of the classical Drift-Diffusion system under the combined relaxation and semiclassical limits.Comment: 21 page

Algebraic time-decay for the bipolar quantum hydrodynamic model

The initial value problem is considered in the present paper for bipolar quantum hydrodynamic model for semiconductors (QHD) in $\mathbb{R}^3$. We prove that the unique strong solution exists globally in time and tends to the asymptotical state with an algebraic rate as $t\to+\infty$. And, we show that the global solution of linearized bipolar QHD system decays in time at an algebraic decay rate from both above and below. This means in general, we can not get exponential time-decay rate for bipolar QHD system, which is different from the case of unipolar QHD model (where global solutions tend to the equilibrium state at an exponential time-decay rate) and is mainly caused by the nonlinear coupling and cancelation between two carriers. Moreover, it is also shown that the nonlinear dispersion does not affect the long time asymptotic behavior, which by product gives rise to the algebraic time-decay rate of the solution of the bipolar hydrodynamical model in the semiclassical limit.Comment: 23 page

Transport models and advanced numerical simulation of silicon-germanium heterojunction bipolar transistors

Applications in the emerging high-frequency markets for millimeter wave applications more and more use SiGe components for cost reasons. To support the technology effort, a reliable TCAD platform is required. The main issue in the simulation of scaled devices is related to the limitations of the physical models used to describe charge carrier transport. Inherent approximations in the HD formalism are discussed over different technology nodes, providing for the first time a complete survey of HD models capability and restrictions with scaling for simulation of SiGe HBTs. Moreover, a complete set of models for transport parameters of SiGe HBTs is reported, including low-field mobility, energy relaxation time, saturation velocity, high-field mobility and effective density of state. Implementation in a commercial device simulator is drawn and findings are compared with simulation results obtained using a standard set of models and with trustworthy results (i.e. MC and SHE simulation results and experimental data), validating proposed models and clarifying their reliability and accuracy over different technologies. Finally, electrical breakdown phenomena in SiGe HBTs are analyzed: a novel complete model for multiplication factor is reported and validated by experimental results; new M model provides an exhaustive accuracy over a wide range of collector voltages

Simulation of Heterojunction Bipolar Transistors in Two Dimensions

This work describes the formulation and, development of a two-- dimensional drift-diffusion simulation program for accurate modeling of heterojunction bipolar transistors (HBT\u27s). The model described is a versatile tool for studying HBT\u27s, allowing the user to determine the terminal characteristics and physical operation of devices. Nonplanar structures can be treated, response to transient conditions can be computed, and the high frequency characteristics of transistors may be projected. The formulation of an electron energy balance equation is presented and included in the model in an attempt to more accurately compute high-field transport characteristics. The model is applied to some common design questions and experimental results are reproduced

Electrical and Thermal Transport in Alternative Device Technologies

abstract: The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit solves the Boltzmann transport equation for electrons; and an extension to this code that solves for the bulk properties of strained silicon. One scattering table is needed for conventional silicon, whereas, because of the strain breaking the symmetry of the system, three scattering tables are needed for modeling strained silicon material. Simulation results for the average drift velocity and the average electron energy are in close agreement with published data. A Monte Carlo device simulation tool has also been employed to integrate the effects of self-heating into device simulation for Silicon on Insulator devices. The effects of different types of materials for buried oxide layers have been studied. Sapphire, Aluminum Nitride (AlN), Silicon dioxide (SiO2) and Diamond have been used as target materials of interest in the analysis and the effects of varying insulator layer thickness have also been investigated. It was observed that although AlN exhibits the best isothermal behavior, diamond is the best choice when thermal effects are accounted for.Dissertation/ThesisM.S. Electrical Engineering 201

Stationary and Transient Simulations for a One-Dimensional Resonant Tunneling Diode

We investigate the validity of stationary simulations for semiconductor quantum charge transport in a one-dimensional resonant tunneling diode via fluid type models. Careful numerical investigations to a quantum hydrodynamic model reveal that the transient simulations do not always converge to the steady states. In particular, growing oscillations are observed at relatively large applied voltage. A dynamical bifurcation is responsible for the stability interchange of the steady state. Transient and stationary computations are also performed for a unipolar quantum drift-diffusion model