Emerging physical unclonable functions with nanotechnology

Physical unclonable functions (PUFs) are increasingly used for authentication and identification applications as well as the cryptographic key generation. An important feature of a PUF is the reliance on minute random variations in the fabricated hardware to derive a trusted random key. Currently, most PUF designs focus on exploiting process variations intrinsic to the CMOS technology. In recent years, progress in emerging nanoelectronic devices has demonstrated an increase in variation as a consequence of scaling down to the nanoregion. To date, emerging PUFs with nanotechnology have not been fully established, but they are expected to emerge. Initial research in this area aims to provide security primitives for emerging integrated circuits with nanotechnology. In this paper, we review emerging nanotechnology-based PUFs

Reconfigurable horizontal-vertical carrier transport in graphene/HfZrO field-effect transistors

We have fabricated at wafer level field-effect-transistors (FETs) having as channel graphene monolayers transferred on a HfZrO ferroelectric, grown by atomic layer deposition on a doped Si (100) substrate. These FETs display either horizontal or vertical carrier transport behavior, depending on the applied gate polarity. In one polarity, the FETs behave as a graphene FET where the transport is horizontal between two contacts (drain and grounded source) and is modulated by a back-gate. Changing the polarity, the transport is vertical between the drain and the back-gate and, irrespective of the metallic contact type, Ti/Au or Cr/Au, the source-drain bias modulates the height of the potential barrier between HfZrO and the doped Si substrate, the carrier transport being described by a Schottky mechanism at high gate voltages and by a space-charge limited mechanism low gate voltages. Vertical transport is required by three-dimensional integration technologies for increasing the density of transistors on chip

Fault tolerance issues in nanoelectronics

The astonishing success story of microelectronics cannot go on indefinitely. In fact, once devices reach the few-atom scale (nanoelectronics), transient quantum effects are expected to impair their behaviour. Fault tolerant techniques will then be required. The aim of this thesis is to investigate the problem of transient errors in nanoelectronic devices. Transient error rates for a selection of nanoelectronic gates, based upon quantum cellular automata and single electron devices, in which the electrostatic interaction between electrons is used to create Boolean circuits, are estimated. On the bases of such results, various fault tolerant solutions are proposed, for both logic and memory nanochips. As for logic chips, traditional techniques are found to be unsuitable. A new technique, in which the voting approach of triple modular redundancy (TMR) is extended by cascading TMR units composed of nanogate clusters, is proposed and generalised to other voting approaches. For memory chips, an error correcting code approach is found to be suitable. Various codes are considered and a lookup table approach is proposed for encoding and decoding. We are then able to give estimations for the redundancy level to be provided on nanochips, so as to make their mean time between failures acceptable. It is found that, for logic chips, space redundancies up to a few tens are required, if mean times between failures have to be of the order of a few years. Space redundancy can also be traded for time redundancy. As for memory chips, mean times between failures of the order of a few years are found to imply both space and time redundancies of the order of ten

Performance analysis of fault-tolerant nanoelectronic memories

Performance growth in microelectronics, as described by Moore’s law, is steadily approaching its limits. Nanoscale technologies are increasingly being explored as a practical solution to sustaining and possibly surpassing current performance trends of microelectronics. This work presents an in-depth analysis of the impact on performance, of incorporating reliability schemes into the architecture of a crossbar molecular switch nanomemory and demultiplexer. Nanoelectronics are currently in their early stages, and so fabrication and design methodologies are still in the process of being studied and developed. The building blocks of nanotechnology are fabricated using bottom-up processes, which leave them highly susceptible to defects. Hence, it is very important that defect and fault-tolerant schemes be incorporated into the design of nanotechnology related devices. In this dissertation, we focus on the study of a novel and promising class of computer chip memories called crossbar molecular switch memories and their demultiplexer addressing units. A major part of this work was the design of a defect and fault tolerance scheme we called the Multi-Switch Junction (MSJ) scheme. The MSJ scheme takes advantage of the regular array geometry of the crossbar nanomemory to create multiple switches in the fabric of the crossbar nanomemory for the storage of a single bit. Implementing defect and fault tolerant schemes come at a performance cost to the crossbar nanomemory; the challenge becomes achieving a balance between device reliability and performance. We have studied the reliability induced performance penalties as they relate to the time (delay) it takes to access a bit, and the amount of power dissipated by the process. Also, MSJ was compared to the banking and error correction coding fault tolerant schemes. Studies were also conducted to ascertain the potential benefits of integrating our MSJ scheme with the banking scheme. Trade-off analysis between access time delay, power dissipation and reliability is outlined and presented in this work. Results show the MSJ scheme increases the reliability of the crossbar nanomemory and demultiplexer. Simulation results also indicated that MSJ works very well for smaller nanomemory array sizes, with reliabilities of 100% for molecular switch failure rates in the 10% or less range

Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing

For the last decade, semiconducting nanowires synthesized by bottom-up methods have opened up new opportunities, stimulated innovative scientific research, and led to applications in materials science, electronics, optics, and biology at the nanoscale. Notably, nanowire building blocks with precise control of size, structure, morphology, and even composition in one, two, and three dimensions can successfully demonstrate high-performance electrical characteristics of field-effect transistors (FETs) and highly sensitive, selective, label-free, real-time biosensors in the fields of nanoelectronics and nano-biosensing, respectively. This thesis has focused on the design, synthesis, assembly, fabrication and electrical characterization of nanowire heterostructures for a proof-of-concept nanoprocessor and morphology-modulated kinked nanowire molecular nanosensor.Physic

Emerging physical unclonable functions with nanotechnology

Physical unclonable functions (PUFs) are increasingly used for authentication and identification applications as well as the cryptographic key generation. An important feature of a PUF is the reliance on minute random variations in the fabricated hardware to derive a trusted random key. Currently, most PUF designs focus on exploiting process variations intrinsic to the CMOS technology. In recent years, progress in emerging nanoelectronic devices has demonstrated an increase in variation as a consequence of scaling down to the nanoregion. To date, emerging PUFs with nanotechnology have not been fully established, but they are expected to emerge. Initial research in this area aims to provide security primitives for emerging integrated circuits with nanotechnology. In this paper, we review emerging nanotechnology-based PUFs