55 research outputs found

    ์ˆ˜์†Œ์— ๋…ธ์ถœ๋œ ๋‹จ๊ฒน ํƒ„์†Œ๋‚˜๋…ธํŠœ๋ธŒ์˜ ์ „๊ธฐ์  ํŠน์„ฑ

    Get PDF
    ํ•™์œ„๋…ผ๋ฌธ (๋ฐ•์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› : ์ž์—ฐ๊ณผํ•™๋Œ€ํ•™ ๋ฌผ๋ฆฌยท์ฒœ๋ฌธํ•™๋ถ€(๋ฌผ๋ฆฌํ•™์ „๊ณต), 2020. 8. ๋ฐ•์˜์šฐ.Carbon nanotube (CNT) is one of the most promising materials for the next generation electronics. However, there still have been many challenges for the realization of CNT-based electronics. Especially, the hole-favored electronic property of CNT in ambient condition has been the huge obstacle. To form an integrated circuit for logic computation, both n-type and p-type transistors are necessary. Hence, reliably working n-type CNT transistors have been desired. We report changes in the electrical property of single-walled carbon nanotube (SWNT) caused by exposure to high-pressure hydrogen gas. First, we report the electron doping effect of SWNT. In-situ 3-terminal electrical measurements with hexagonal boron nitride (hBN) substrate were used to observe the intrinsic electronic properties of hydrogen-exposed SWNT. Comparing to the planar graphene sheet device, we observed the curved structure of SWNT is advantages on the reaction with hydrogen molecules. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy verified the formation of C-H bond on SWNT surface after the hydrogen exposure process. The covalent bond yielded short-range scattering in the graphene device and band gap widening in the SWNT devices. Second, the metal work function-dependent doping effect on SWNT field effect transistor (FET) is investigated. To obtain the SWNT FET with higher Schottky barrier (SB) for the hole injection, we adapted the different contact metals that have lower work functions such as Cr and Ti replacing the Au/Ti electrodes. Comparing to the Au/Ti-contacted SWNT FET case, we observed noticeable hole carrier reduction after the hydrogen exposure in Cr- and Ti-contacted devices. It suggest the doping induced SB thickness change relies on the SB height. In other words, the changes in thickness (via electron doping) of higher SB (via low work function metal contact) causes more significant effect on the Ids-Vgs curve. Consequently, we achieved the SWNT FET that nearly perfectly working as an n-type semiconductor by hydrogen exposure to SWNT FET with Ti contacts. Since the electron doping effect was also reproduced in SWNT network devices, we expect the useful electrical properties and the stable nature of C-H bond observed in the hydrogen-exposed SWNT can leads a step forward to the application of SWNT for the next generation electronics.ํƒ„์†Œ๋‚˜๋…ธํŠœ๋ธŒ (CNT)๋Š” ์ฐจ์„ธ๋Œ€ ์ „์ž ์†Œ์ž๋กœ ๊ฐ€์žฅ ์œ ๋งํ•œ ๋ฌผ์งˆ ์ค‘ ํ•˜๋‚˜๋กœ ์† ๊ผฝํžŒ๋‹ค. ํ•˜์ง€๋งŒ CNT ๊ธฐ๋ฐ˜ ์ „์ž๊ณตํ•™์„ ์‹คํ˜„ํ•˜๊ธฐ ์œ„ํ•œ ๋ช‡ ๊ฐ€์ง€ ์žฅ์• ๋ฌผ๋“ค์ด ์กด์žฌํ•œ๋‹ค. ํŠนํžˆ, ๊ณต๊ธฐ ์ค‘์—์„œ pํ˜• ๋ฐ˜๋„์ฒด ์„ฑํ–ฅ์„ ๊ฐ•ํ•˜๊ฒŒ ๋ ๋Š” ๊ฒƒ์ด ๋ฌธ์ œ์ด๋‹ค. ์ง‘์ ํšŒ๋กœ๋ฅผ ๊ตฌ์„ฑํ•˜๊ธฐ ์œ„ํ•ด์„œ๋Š” nํ˜• ๋„ ํ•„์š”ํ•˜๋‹ค. ๋”ฐ๋ผ์„œ ์•ˆ์ •์ ์œผ๋กœ ์ž‘๋™ํ•˜๋Š” nํ˜• CNT ํŠธ๋žœ์ง€์Šคํ„ฐ์˜ ๊ฐœ๋ฐœ์ด ์š”๊ตฌ๋˜๊ณ  ์žˆ๋‹ค. ์ด ๋…ผ๋ฌธ์—์„œ๋Š” ๋‹จ๊ฒน ํƒ„์†Œ๋‚˜๋…ธํŠœ๋ธŒ (SWNT) ๋ฅผ ๊ณ ์˜จ ๊ณ ์•• ์ˆ˜์†Œ์— ๋…ธ์ถœ ์‹œํ‚จ ๋’ค ๋ณ€ํ™”ํ•˜๋Š” ์ „๊ธฐ์  ํŠน์„ฑ์„ ์†Œ๊ฐœ ํ•œ๋‹ค. ์ฒซ ๋ฒˆ์งธ๋กœ๋Š” ์ „์ž ๋„ํ•‘ ํ˜„์ƒ์„ ๋ณด๊ณ ํ•œ๋‹ค. 2์ฐจ์› ๋ถ€๋„์ฒด์ด์ž ๋ถˆํฌํ™” ๊ฒฐํ•ฉ์ด ์ตœ์†Œํ™” ๋œ ๊ฒƒ์œผ๋กœ ์•Œ๋ ค์ง„ hexagonal boron nitride ๊ธฐํŒ์„ ์‚ฌ์šฉํ•œ ์†Œ์ž๋ฅผ ์ œ์ž‘ํ•˜์—ฌ ๊ธฐํŒ์œผ๋กœ๋ถ€ํ„ฐ ์•ผ๊ธฐ๋˜๋Š” ์™ธ๋ถ€ ํ™˜๊ฒฝ์˜ ์˜ํ–ฅ์„ ์ตœ์†Œํ™” ํ•˜์˜€๋‹ค. ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ์ด ์†Œ์ž์˜ ์ˆ˜์†Œ ๋…ธ์ถœ ์ „ ๊ณผ์ •์„ in-situ ์ธก์ •๋ฒ•์œผ๋กœ ์ธก์ •ํ•˜์—ฌ, ์™ธ๋ถ€ ํ™˜๊ฒฝ์— ์˜ํ•œ ์˜ํ–ฅ์„ ๋ฐฐ์ œํ•œ SWNT ๊ณ ์œ ์˜ ์ „๊ธฐ์  ํŠน์„ฑ์„ ์ธก์ • ํ•  ์ˆ˜ ์žˆ์—ˆ๋‹ค. ๊ทธ ๊ฒฐ๊ณผ, ์ˆ˜์†Œ์— ๋…ธ์ถœ๋œ SWNT์— ์ „์ž๊ฐ€ ๋„ํ•‘ ๋˜๋Š” ํ˜„์ƒ์„ ๊ด€์ธกํ•˜์˜€๋‹ค. SWNT์˜ ๊ณก๋ฅ ์ด ์ˆ˜์†Œ์™€์˜ ๋ฐ˜์‘์— ์ด์ ์œผ๋กœ ์ž‘์šฉํ•œ๋‹ค๋Š” ๊ฒฐ๊ณผ๋ฅผ ํ‰๋ฉด ๊ตฌ์กฐ์ธ graphene ์†Œ์ž์™€์˜ ์ˆ˜์†Œ๋…ธ์ถœ ๋น„๊ต์‹คํ—˜์—์„œ ํ™•์ธ ํ•  ์ˆ˜ ์žˆ์—ˆ๋‹ค. ์—‘์Šค์„  ๊ด‘์ „์ž ๋ถ„๊ด‘๋ฒ• ์™€ ๋ผ๋งŒ ๋ถ„๊ด‘๋ฒ•์„ ํ†ตํ•ด ๊ณ ์˜จ, ๊ณ ์••์— ๋…ธ์ถœ๋œ SWNT์— C-H ๊ฒฐํ•ฉ์ด ํ™”ํ•™์ ์œผ๋กœ ์ƒ์„ฑ๋œ ๊ฒƒ์„ ํ™•์ธ ํ•˜์˜€๋‹ค. ๋งˆ์ง€๋ง‰์œผ๋กœ ์ด ๊ณต์œ ๊ฒฐํ•ฉ์— ์˜ํ•ด graphene์—์„œ๋Š” short-range scattering ํ˜„์ƒ์ด, SWNT ์—์„œ๋Š” ์—๋„ˆ์ง€ ๋ฐด๋“œ ๊ฐญ ํ™•์žฅ ํ˜„์ƒ์ด ๊ด€์ธก ๋˜๋Š” ๊ฒƒ์„ ํ™•์ธํ•˜์˜€๋‹ค. ๋‘ ๋ฒˆ์งธ๋กœ SWNT ์ „๊ณ„ ํšจ๊ณผ ํŠธ๋žœ์ง€์Šคํ„ฐ (field effect transistor, FET) ์˜ ์ „๊ธฐ์  ์ปจํƒ์„ ๋ณ€ํ™”ํ•˜๋Š” ์—ฐ๊ตฌ๋ฅผ ์ง„ํ–‰ํ•˜์˜€๋‹ค. SWNT์™€ ๊ธˆ์† ์ปจํƒ์—์„œ ๋ฐœ์ƒํ•˜๋Š” ์‡ผํŠธํ‚ค ์žฅ๋ฒฝ์˜ ๋†’์ด๊ฐ€ ๊ธˆ์†๊ณผ SWNT์˜ ์ผ ํ•จ์ˆ˜ ์ฐจ์ด์— ์˜์กดํ•˜๊ธฐ ๋•Œ๋ฌธ์—, ๊ธˆ ๋ณด๋‹ค ๋‚ฎ์€ ์ผ ํ•จ์ˆ˜๋ฅผ ๊ฐ–๋Š” ๊ธˆ์†์ธ ํฌ๋กฌ, ํ‹ฐํƒ€๋Š„์„ ์ „๊ธฐ์ ์ธ ์ปจํƒ ๋ฌผ์งˆ๋กœ ์‚ฌ์šฉํ•˜์—ฌ ๊ทธ ์ฐจ์ด์ ์„ ์—ฐ๊ตฌํ•œ ๊ฒƒ์ด๋‹ค. ๊ทธ ๊ฒฐ๊ณผ ์ผ ํ•จ์ˆ˜๊ฐ€ ๋‚ฎ์€ ํฌ๋กฌ, ํ‹ฐํƒ€๋Š„์„ ์ปจํƒ์œผ๋กœ ์‚ฌ์šฉ ํ–ˆ์„ ๋•Œ ๊ธˆ์„ ์‚ฌ์šฉํ•œ ๊ฒฝ์šฐ๋ณด๋‹ค ํ›จ์”ฌ ์ ์€ ์–‘์˜ ํ™€(hole) ํƒ€์ž… ์ „๋ฅ˜๊ฐ€ ํ๋ฅธ๋‹ค๋Š” ์‚ฌ์‹ค์ด ๊ด€์ธก๋˜์—ˆ๋‹ค. ์ด ๊ด€์ธก์„ ํ†ตํ•ด ์ „์ž ๋„ํ•‘์œผ๋กœ ์ธํ•ด ์•ผ๊ธฐ๋œ ์‡ผํŠธํ‚ค ์žฅ๋ฒฝ์˜ ๋‘๊ป˜ ๋ณ€ํ™”์˜ ์˜ํ–ฅ์ด ์‡ผํŠธํ‚ค ์žฅ๋ฒฝ์˜ ๋†’์ด์— ์˜ํ•ด ํฌ๊ฒŒ ์ขŒ์šฐ ๋  ์ˆ˜ ์žˆ๋‹ค๋Š” ๊ฒƒ์„ ์•Œ ์ˆ˜ ์žˆ๋‹ค. ์ฆ‰, ํฌ๋กฌ๊ณผ ํ‹ฐํƒ€๋Š„๊ณผ ๊ฐ™์ด ๋†’์€ ์‡ผํŠธํ‚ค ์žฅ๋ฒฝ์„ ๊ฐ–๋Š” ๊ธˆ์† ์ปจํƒ์˜ ๊ฒฝ์šฐ์—, ์ „์ž ๋„ํ•‘์— ๋”ฐ๋ฅธ ์‡ผํŠธํ‚ค ์žฅ๋ฒฝ์˜ ๋‘๊ป˜ ์ฆ๊ฐ€๊ฐ€ ํฌ๊ฒŒ ๋‚˜ํƒ€๋‚˜ ํ™€ ํƒ€์ž… ์ „๋ฅ˜๋ฅผ ํฌ๊ฒŒ ๊ฐ์†Œ์‹œํ‚จ๋‹ค๋Š” ๊ฒƒ์ด๋‹ค. ๋”ฐ๋ผ์„œ ์šฐ๋ฆฌ๋Š” ์ด ํ˜„์ƒ์„ ์ด์šฉํ•˜์—ฌ ๊ฑฐ์˜ ์™„๋ฒฝํ•˜๊ฒŒ nํ˜• ํŠธ๋žœ์ง€์Šคํ„ฐ๋กœ ์ž‘๋™ ํ•˜๋Š” SWNT FET๋ฅผ ์ œ์ž‘ ํ•  ์ˆ˜ ์žˆ์—ˆ๋‹ค. ์ˆ˜์†Œ์— ๋…ธ์ถœ๋œ SWNT์— ํ˜•์„ฑ๋œ ์•ˆ์ •์ ์ธ C-H ๊ฒฐํ•ฉ์— ์˜ํ•œ ์ „์ž ๋„ํ•‘ ํ˜„์ƒ์ด SWNT ๋„คํŠธ์›Œํฌ ์†Œ์ž์—์„œ๋„ ๋‚˜ํƒ€๋‚จ์„ ํ™•์ธ ํ•จ์œผ๋กœ์จ, ์•ž์œผ๋กœ ์ด ๊ธฐ์ˆ ์ด ๋Œ€ ๋ฉด์  ๋‚˜๋…ธํŠœ๋ธŒ ์†Œ์ž์˜ ์ „์ž ๋„ํ•‘์— ์‘์šฉ๋  ์ˆ˜ ์žˆ์Œ์„ ํ™•์ธํ•˜์˜€๋‹ค.Chapter 1. Introduction 1 1.1 Introduction of carbon nanotubes 1 1.2 Electronic structure of single-walled carbon nanotubes (SWNT) 2 1.3 Electrical contact to SWNT and Schottky barrier 5 1.4 Outline of thesis 8 Chapter 2. Backgrounds on hydrogen-exposed SWNTs 11 2.1 Hydrogen storage 11 2.2 Unzipping of SWNT 15 2.2 Energy band gap widening of hydrogenated SWNT 17 Chapter 3. SWNT field-effect transistor (FET) exposed to hydrogen 25 3.1 Introduction 25 3.1.1 Electron doping effect of hydrogenated graphitic materials 25 3.1.2 Motivation of SWNT exposure to hydrogen 27 3.2 Experimental 28 3.3 Result and discussion 31 3.3.1 In-situ electrical measurements of hydrogen-exposed SWNT 31 3.3.2 Surface potential spectroscopy of hydrogen-exposed SWNTs 35 3.3.3 Exposure time-dependent electrical property 36 3.3.4 Effect of curved structure 38 3.3.5 Raman spectroscopy and XPS of hydrogen-exposed SWNT 44 3.3.6 Electrical properties with covalent bond 47 3.3.7 SWNT network FET exposed to hydrogen 53 3.4 Summary of Chapter 3 55 Chapter 4. Hydrogen-exposed SWNT FETs with low work function metal contacts 61 4.1 Introduction 61 4.1.1 Schottky barrier formation of SWNT with low work function metal contacts 61 4.1.2 Strategies for n-type SWNT FETs : Electron doping and contact engineering 64 4.2 Experimental 66 4.3 Result and discussion 68 4.3.1 Hydrogen exposure of SWNT FETs with different metal contacts 68 4.3.2 Electron doping induced significant reduction of the hole injection in Cr-contacted SWNT FET 72 4.3.3 H2 Exposure time dependence of Ids-Vgs curve shift in different metal contacts 76 4.4 Summary of Chapter 4 79 Chapter 5. Conclusion 83Docto

    Carbon Nanotubes:Adsorption, Point Defects and Structural Deformation from Quantum and Classical Simulations

    Get PDF
    This thesis studies carbon nanotubes using state-of-the-art computational methods. Using large-scale quantum-mechanical calculations, based on density-functional-theory, we investigate several important aspects of the physics and chemistry of single-walled-nanotubes. The focus is on the effect of defects, namely adparticles and vacancies, on the structural, electronic and dynmical properties of the nanotubes. We also present preliminary results of simulations exploring a possible route for the formation of SWNTs from graphene nanoflakes. Adparticles include atomic hydrogen, oxygen, sulfur at different concentrations as well as nitrogen--oxides. Chemisorption of hydrogen as well as oxygen and isoelectronic species results in the formation of clusters on the sidewall, with characteristic structures corresponding to characteristic signatures in the electronic spectra. Especially in the case of oxygen, we find that relatively high energy barriers separate different structures: this shows that not only thermodynamically favored configurations are relevant for the understanding of oxygen chemisorption but the presence of traps cannot be neglected. The fingerpint of these traps is confirmed by scanning-tunneling spectroscopy. Trends with size and chirality of the nanotubes and oxygen coverage are studied in detail and also explained in terms of simple chemical descriptors. The importance of large-scale atomistic models is also emphasized to obtain convergent results and thus reliable predictions, and comparison is made of results we obtain using different gradient-corrected exchange-correlation functionals and in part with hybrid functionals. The study of nitrogen-oxides faces the difficulty to correctly represent physisorption, also with empirically corrected gradient-corrected exchange-correlation and hybrid functionals. Still our calculations of vibrational frequencies of different molecules on the sidewall, once compared with experiment, are able to distinguish the specific species observed in infrared spectra. Part of our work is centered on the comparison of widely used classical potentials (reactive force fields) with DFT results. Specifically we use them to study hydrogen and oxygen chemisorption, and especially examine the validity of several different force-fields for the description of the structure and energetics of single and double vacancies. In all cases, we find rather limited agreement with DFT results, showing the intrinsic difficulty to represent the subtle and intrinsic quantum effects governing the physico-chemical behavior of carbon nanotubes. Still, the wealth of results we have obtained might be useful for an improvement of these classical schemes for a specific application or other semi-classical models

    Standardized Testing Program for Solid-State Hydrogen Storage Technologies

    Full text link

    Surface Plasmon Resonance for Biosensing

    Get PDF
    The rise of photonics technologies has driven an extremely fast evolution in biosensing applications. Such rapid progress has created a gap of understanding and insight capability in the general public about advanced sensing systems that have been made progressively available by these new technologies. Thus, there is currently a clear need for moving the meaning of some keywords, such as plasmonic, into the daily vocabulary of a general audience with a reasonable degree of education. The selection of the scientific works reported in this book is carefully balanced between reviews and research papers and has the purpose of presenting a set of applications and case studies sufficiently broad enough to enlighten the reader attention toward the great potential of plasmonic biosensing and the great impact that can be expected in the near future for supporting disease screening and stratification

    DEVELOPMENT OF ADSORBENTS FOR THE CAPTURE AND STORAGE OF HYDROGEN AND CARBON DIOXIDE BY MAGNETRON SPUTTERING

    Get PDF
    Concerns about climate change have rejuvenated global efforts in reducing carbon dioxide (CO2) emissions. Tactics include capture and sequestration of CO2 from point sources and the promotion of hydrogen (H2) as a โ€œtransport fuelโ€. Current H2 vehicles use high pressure H2 tanks which lack the convenience of their fossil fuel counterparts and present potential safety hazards. Development of adsorbent materials that reduce the energetic costs of H2 and CO2 capture, facilitating reversible storage under safer conditions, are hoped to increase the viability of these technologies for industrial application. This thesis is the first to utilise magnetron sputtering, a technique allowing fine control over nano-material synthesis, for the design of novel solid adsorbents and deposition of novel dopants for H2 storage and CO2 capture. Work includes an in-depth study of the influence of nitrogen as a sputter gas on the growth of carbonaceous films, and is the first to explore these films performance as H2 and CO2 adsorbents. Several conflicting nitrogen effects were identified, their influence on the films growth dependent upon the nitrogen fraction of the sputter gas. Performance of the deposited films as adsorbents was also dependent on the growth conditions. The H2 storage capacity at 77 K and 20 bar of an optimised adsorbent, synthesised by magnetron sputtering, was 4.7 wt.%, comparable in performance to alternatives from the literature. Further work provides the first evidence that cerium, deposited by magnetron sputtering, can function as an adsorbent catalyst and identified that sputtering is a worthwhile, yet slow process for adsorbent doping as it facilitates intimate binding between the adsorbent and the dopant. The novel synthesis of graphene by magnetron sputtering was also attempted. Whilst tests failed, results collected could provide guidance for more successful attempts in the future

    Contact Metal-Dependent Electrical Transport in Carbon Nanotubes and Fabrication of Graphene Nanoribbons

    Get PDF
    In this thesis, we fabricate and characterize carbon nanotube (CNT) and graphene-based field effect transistor devices. The CNT-based work centers on the physics of metal contacts to CNT, particularly relating the work function of contact metals to carrier transport across the junction. The graphene work is motivated by the desire to utilize the high carrier mobility of graphene in field effect transistors. We introduce a surface-inversion channel (SIC) model based on low temperature and electrical measurements of a distinct single-walled semiconducting CNT contacted by Hf, Cr, Ti and Pd electrodes. Anomalous barrier heights and metal-contact dependent band-to-band tunneling phenomena are utilized to show that dependent upon contact work function and gate field, transport occurs either directly between the metal and CNT channel or indirectly via injection of carriers from the metal-covered CNT region to the CNT channel. The model is consistent with previously contradictory experimental results, and the methodology is simple enough to apply in other contact-dominant systems. We further develop a model explain Isd-Vsd tendencies in CNT FETs. Using experimental and analytical analysis, we demonstrate a relationship between the contact metal work function and electrical transport properties saturation current (Isat) and differential conductance in ambient exposed CNT. A single chemical vapor deposition (CVD)-grown 6 millimeter long semiconducting single-walled CNT is electrically contacted with a statistically significant number of Hf, Cr, Ti, Pd, and Ti, Au electrodes, respectively. The observed exponentially increasing relationship of Isat and with metal-contact work function that is explained by a theoretical model derived from thermionic field emission. Next, a performance analysis on CNT Schottky diodes using source-drain current anisotropy is explored. An analytical model is derived based on thermionic field emission and used to correlate experimental data from Pd-Hf, Ti-Hf, Cr-Hf, Ti-Cr, and Pd-Au mixed metal devices fabricated on one single 6 mm-long CNT. Results suggest that the difference in work functions of the two contact-metals, and not a dominant Schottky contact, determines diode performance. Results are further applied and demonstrated in a reversible polarity diode. Lastly, we investigate the effect of UV irradiation of graphene, CNT, and graphene/CNT hybrids in an oxygen environment. Samples were irradiated by 254/185 nm UV light in an oxygen environment for up to two hours. Results suggest a unique method to generate graphene nanoribbons using aligned carbon nanotubes (CNT) as a graphene etch mask. Ambient and cryogenic Gsd-Vg measurements of resulting ultra-thin graphene nanoribbons show p-type character and field effect GOn/GOff > 10^4

    A novel transparent and flexible pressure sensor for the human machine interface

    Get PDF
    The movement towards flexible and transparent electronics for use in displays, electronic skins, musical instruments and automotive industries, demands electrical components such as pressure sensors to evolve alongside circuitry and electrodes to ensure a fully flexible and transparent system. In the past, piezoresistive pressure sensors made with flexible electrodes have been fabricated, however, many of these systems are opaque. For the first time, we present a technology that exploits the natural self-assembly of polystyrene nanospheres to reproducibly create nanostructured materials to be used in optically transparent pressure sensors with sensing performance comparable to opaque industry standards. The performance of the piezoresistive pressure sensor relies on uniform elastic nano-dome arrays. A thin and homogeneous lining of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) renders the domes conductive and retains the transparent and flexible qualities of the underlying polymer. The film transparency is primarily dependant on PEDOT:PSS film thickness where transparencies as high as 79.3 \% are achieved for films of less than 100 nm in thickness. The sensors demonstrate a resistance response across the force range appropriate for all human machine interface interactions, which correspond here to 0.07 to 26 N. The fabrication process involves the creation of an electroactive mould which is used to create nanostructred polymer layers. To enable mould reuse and enhance process efficiency, an anti-adhesive treatment in the form of a self-assembled monolayer of alkanethiols has been developed. Three chain lengths for the alkanethiol of chemical structure H3_{3}C-(CH2_{2})n_{n}-SH where n = 3, 5, and 11 are investigated and SAM functionalisation is confirmed with XPS. Peel tests prove that all three are effective at preventing adhesion between the mould and PEDOT:PSS and the treatment is shown not to be detrimental to the polymer electrodeposition process. An adapted fabrication procedure with custom designed electrode housing enables larger samples to be created for prototype devices. A simple functional prototype in the form of a multi-pixel force sensor atop of an LED display is successfully designed and fabricated to highlight the technology for use at the human machine interface.Open Acces

    Novel Wastewater Treatment Applications Using Polymeric Materials

    Get PDF
    This reprint focuses on the effective removal of organic and inorganic pollutants from water and wastewater using unique freestanding polymeric-based methods. It also examines innovative green methods for efficiently reusing various solid waste products. In addition, several new eco-friendly hybrid materials are being reviewed in order to alleviate the problem of water pollution in novel, rapid, and efficient methods

    Integration of thrombin-binding aptamers in point-of-care devices for continuous monitoring of thrombin in plasma

    Get PDF
    La thrombine est l'enzyme principale dans le processus d'hรฉmostase. Les dรฉrรจglements de la concentration de thrombine clinique prรฉdisposent les patients ร  des complications hรฉmorragiques ou thromboemboliques. Le suivi en temps rรฉel de la thrombine dans le sang est donc nรฉcessaire pour amรฉliorer le traitement de patients en รฉtat critique. Les aptamรจres, qui sont de courts nuclรฉotides monobrins semblent constituer des candidats prometteurs pour la reconnaissance molรฉculaire dans les biocapteurs. L'objectif de ces travaux est l'รฉtude de diffรฉrentes solutions d'intรฉgration des aptamรจres dans des dispositifs de diagnostic de type "point of care" pour le suivi en continu de la thrombine dans le plasma. La cinรฉtique d'interaction des aptamรจres avec la thrombine et leur spรฉcificitรฉ vis-ร -vis de la prothrombine et des inhibiteurs de la thrombine ont รฉtรฉ รฉtudiรฉs par rรฉsonance par plasmons de surface. Ces travaux ont dรฉmontrรฉ la faible spรฉcificitรฉ de l'aptamรจre HD1 vis-ร -vis de la thrombine, et la prรฉsence d'interactions non-spรฉcifiques avec la prothrombine, les inhibiteurs naturels de la thrombine et l'albumine. Inversement, nous avons observรฉ une bonne affinitรฉ de l'aptamรจre HD22 avec la mรชme liste de cible. Parallรจlement, nous avons รฉvaluรฉ des stratรฉgies d'intรฉgration d'aptamรจres dans des dispositifs d'analyse. Le principe de reconnaissance a ensuite รฉtรฉ validรฉ et la possibilitรฉ de dรฉtecter la thrombine dans des gammes de concentration de 5 ร  500nM a รฉtรฉ dรฉmontrรฉe. Enfin, afin d'augmenter la spรฉcificitรฉ de la dรฉtection de la thrombine, nous avons proposรฉ une nouvelle approche basรฉe sur l'ingรฉnierie de structures dimรจres interconnectant HD1 et HD22.Thrombin is the central enzyme in the process of hemostasis. Normally, in vivo concentration of thrombin is rigorously regulated; however, clinically impaired or unregulated thrombin generation predisposes patients either to hemorrhagic or thromboembolic complications. Monitoring thrombin in real-time is therefore needed to enable rapid and accurate determination of drug administration strategy for patients under vital threat. Aptamers, short single-stranded oligonucleotide ligands represent promising candidates as biorecognition elements for new-generation biosensors. The aim of this PhD work therefore is to investigate different solutions for the integration of thrombin-binding aptamers in point-of-care devices for continuous monitoring of thrombin in plasma. The kinetics of aptamer interaction with thrombin and specificity towards prothrombin and thrombin - inhibitor complexes was rigorously investigated using Surface Plasmon Resonance. These experiments unveiled the complex character of interaction of the HD1 with thrombin, confirming nonspecific interactions with prothrombin, natural inhibitors of thrombin, serum albumin whereas another 29-bp aptamer HD22 proved to be highly affine and specific towards thrombin. On the other hand we explored aptamer integration options. We validated the principle and at the same managed to detect different concentrations of thrombin (5-500 nM). We finally proposed a novel approach to increase sensitivity and specificity for thrombin detection based on the engineering of aptadimer structures bearing aptamers HD1and HD22 interconnected with a nucleic acid spacer
    • โ€ฆ
    corecore