5 research outputs found

    RF Circuit linearity optimization using a general weak nonlinearity model

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    This paper focuses on optimizing the linearity in known RF circuits, by exploring the circuit design space that is usually available in today’s deep submicron CMOS technologies. Instead of using brute force numerical optimizers we apply a generalized weak nonlinearity model that only involves AC transfer functions to derive simple equations for obtaining design insights. The generalized weak nonlinearity model is applied to three known RF circuits: a cascode common source amplifier, a common gate LNA and a CMOS attenuator. It is shown that in deep submicron CMOS technologies the cascode transistor in both the common source amplifier and in the common gate amplifier significantly contributes IM3 distortion. Some design insights are presented for reducing the cascode transistor related distortion, among which moderate inversion biasing that improves IIP3 by 10 dB up to 5 GHz in a 90 nm CMOS process. For the attenuator, a wideband IM3 cancellation technique is introduced and demonstrated using simulations

    Compact Models for Integrated Circuit Design

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    This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts
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