Parametric Macromodels of Digital I/O Ports

This paper addresses the development of macromodels for input and output ports of a digital device. The proposed macromodels consist of parametric representations that can be obtained from port transient waveforms at the device ports via a well established procedure. The models are implementable as SPICE subcircuits and their accuracy and efficiency are verified by applying the approach to the characterization of transistor-level models of commercial devices

Supply Current Modeling and Analysis of Deep Sub-Micron Cmos Circuits

Continued technology scaling has introduced many new challenges in VLSI design. Instantaneous switching of the gates yields high current flow through them that causes large voltage drop at the supply lines. Such high instantaneous currents and voltage drop cause reliability and performance degradation. Reliability is an issue as high magnitude of current can cause electromigration, whereas, voltage drop can slow down the circuit performance. Therefore, designing power supply lines emphasizes the need of computing maximum current through them. However, the development of digital integrated circuits in short design cycle requires accurate and fast timing and power simulation. Unfortunately, simulators that employ device modeling methods, such as HSPICE are prohibitively slow for large designs. Therefore, methods which can produce good maximum current estimates in short times are critical. In this work a compact model has been developed for maximum current estimation that speeds up the computation by orders of magnitude over the commercial tools

Leakage Current Analysis for Diagnosis of Bridge Defects in Power-Gating Designs

Manufacturing defects that do not affect the functional operation of low power Integrated Circuits (ICs) can nevertheless impact their power saving capability. We show that stuck-ON faults on the power switches and resistive bridges between the power networks can impair the power saving capability of power-gating designs. For quantifying the impact of such faults on the power savings of power-gating designs, we propose a diagnosis technique that targets bridges between the power networks. The proposed technique is based on the static power analysis of a power-gating design in stand-by mode and it utilizes a novel on-chip signature generation unit, which is sensitive to the voltage level between power rails, the measurements of which are processed off-line for the diagnosis of bridges that can adversely affect power savings. We explore, through SPICE simulation of the largest IWLS’05 benchmarks synthesised using a 32 nm CMOS technology, the trade-offs achieved by the proposed technique between diagnosis accuracy and area cost and we evaluate its robustness against process variation. The proposed technique achieves a diagnosis resolution that is higher than 98.6% and 97.9% for bridges of R ≳ 10MΩ(weak bridges) and bridges of R ≲ 10MΩ (strong bridges), respectively, and a diagnosis accuracy higher than 94.5% for all the examined defects. The area overhead is small and scalable: it is found to be 1.8% and 0.3% for designs with 27K and 157K gate equivalents, respectively

Parameter Variation Sensing and Estimation in Nanoscale Fabrics

Parameter variations introduced by manufacturing imprecision are becoming more influential on circuit performance. This is especially the case in emerging nanoscale fabrics due to unconventional manufacturing steps (e.g., nano-imprint) and aggressive scaling. These parameter variations can lead to performance deterioration and consequently yield loss. Parameter variations are typically addressed pre-fabrication with circuit design targeting worst-case timing scenarios. However, this approach is pessimistic and much of performance benefits can be lost. By contrast, if parameter variations can be estimated post-manufacturing, adaptive techniques or reconfiguration could be used to provide more optimal level of tolerance. To estimate parameter variations during run-time, on-chip variation sensors are gaining in importance because of their easy implementation. In this thesis, we propose novel on-chip variation sensors to estimate variations in physical parameters for emerging nanoscale fabrics. Based on the characteristics of systematic and random variations, two separate sensors are designed to estimate the extent of systematic variations and the statistical distribution of random variations from measured fall and rise times in the sensors respectively. The proposed sensor designs are evaluated through HSPICE Monte Carlo simulations with known variation cases injected. Simulation results show that the estimation error of the systematic-variation sensor is less than 1.2% for all simulated cases; and for the random-variation sensor, the worst-case estimation error is 12.7% and the average estimation error is 8% for all simulations. In addition, to address the placement of on-chip sensors, we calculate sensor area and the effective range of systematic-variation sensor. Then using a processor designed in nanoscale fabrics as a target, an example for sensor placement is introduced. Based on the sensor placement, external noises that may affect the measured fall and rise times of outputs are identified. Through careful analysis, we find that these noises do not deteriorate the accuracy of the systematic-variation sensor, but affect the accuracy of the random-variation sensor. We believe that the proposed on-chip variation sensors in conjunction with post-fabrication compensation techniques would be able to improve system-level performance in nanoscale fabrics, which may be an efficient alternative to making worst-case assumptions on parameter variations in nanoscale designs

Dynamic Frequency Scaling Regarding Memory for Energy Efficiency of Embedded Systems

Memory significantly affects the power consumption of embedded systems as well as performance. CPU frequency scaling for power management could fail in optimizing the energy efficiency without considering the memory access. In this paper, we analyze the power consumption and energy efficiency of an embedded system that supports dynamic scaling of frequency for both CPU and memory access. The power consumption of the CPU and the memory is modeled to show that the memory access rate affects the energy efficiency and the CPU frequency selection. Based on the power model, a method for frequency selection is presented to optimize the power efficiency which is measured using Energy-Delay Product (EDP). The proposed method is implemented and tested on a commercial smartphone to achieve about 3.3% - 7.6% enhancement comparing with the power management policy provided by the manufacturer in terms of EDP

Quantifying Near-Threshold CMOS Circuit Robustness

In order to build energy efficient digital CMOS circuits, the supply voltage must be reduced to near-threshold. Problematically, due to random parameter variation, supply scaling reduces circuit robustness to noise. Moreover, the effects of parameter variation worsen as device dimensions diminish, further reducing robustness, and making parameter variation one of the most significant hurdles to continued CMOS scaling. This paper presents a new metric to quantify circuit robustness with respect to variation and noise along with an efficient method of calculation. The method relies on the statistical analysis of standard cells and memories resulting an an extremely compact representation of robustness data. With this metric and method of calculation, circuit robustness can be included alongside energy, delay, and area during circuit design and optimization