Supply Current Modeling and Analysis of Deep Sub-Micron Cmos Circuits

Abstract

Continued technology scaling has introduced many new challenges in VLSI design. Instantaneous switching of the gates yields high current flow through them that causes large voltage drop at the supply lines. Such high instantaneous currents and voltage drop cause reliability and performance degradation. Reliability is an issue as high magnitude of current can cause electromigration, whereas, voltage drop can slow down the circuit performance. Therefore, designing power supply lines emphasizes the need of computing maximum current through them. However, the development of digital integrated circuits in short design cycle requires accurate and fast timing and power simulation. Unfortunately, simulators that employ device modeling methods, such as HSPICE are prohibitively slow for large designs. Therefore, methods which can produce good maximum current estimates in short times are critical. In this work a compact model has been developed for maximum current estimation that speeds up the computation by orders of magnitude over the commercial tools

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