A New Technique for the Design of Multi-Phase Voltage Controlled Oscillators

© 2017 World Scientific Publishing Company.In this work, a novel circuit structure for second-harmonic multi-phase voltage controlled oscillator (MVCO) is presented. The proposed MVCO is composed of (Formula presented.) ((Formula presented.) being an integer number and (Formula presented.)2) identical inductor–capacitor ((Formula presented.)) tank VCOs. In theory, this MVCO can provide 2(Formula presented.) different phase sinusoidal signals. A six-phase VCO based on the proposed structure is designed in a TSMC 0.18(Formula presented.)um CMOS process. Simulation results show that at the supply voltage of 0.8(Formula presented.)V, the total power consumption of the six-phase VCO circuit is about 1(Formula presented.)mW, the oscillation frequency is tunable from 2.3(Formula presented.)GHz to 2.5(Formula presented.)GHz when the control voltage varies from 0(Formula presented.)V to 0.8(Formula presented.)V, and the phase noise is lower than (Formula presented.)128(Formula presented.)dBc/Hz at 1(Formula presented.)MHz offset frequency. The proposed MVCO has lower phase noise, lower power consumption and more outputs than other related works in the literature.Peer reviewedFinal Accepted Versio

Broadband squeezing of quantum noise in a Michelson interferometer with Twin-Signal-Recycling

Twin-Signal-Recycling (TSR) builds on the resonance doublet of two optically coupled cavities and efficiently enhances the sensitivity of an interferometer at a dedicated signal frequency. We report on the first experimental realization of a Twin-Signal-Recycling Michelson interferometer and also its broadband enhancement by squeezed light injection. The complete setup was stably locked and a broadband quantum noise reduction of the interferometers shot noise by a factor of up to 4\,dB was demonstrated. The system was characterized by measuring its quantum noise spectra for several tunings of the TSR cavities. We found good agreement between the experimental results and numerical simulations

An Integrated Subharmonic Coupled-Oscillator Scheme for a 60-GHz Phased-Array Transmitter

This paper describes the design of an integrated coupled-oscillator array in SiGe for millimeter-wave applications. The design focuses on a scalable radio architecture where multiple dies are tiled to form larger arrays. A 2 × 2 oscillator array for a 60-GHz transmitter is fabricated with integrated power amplifiers and on-chip antennas. To lock between multiple dies, an injection-locking scheme appropriate for wire-bond interconnects is described. The 2 × 2 array demonstrates a 200–MHz locking range and 1 × 4 array formed by two adjacent chips has a 60-MHz locking range. The phase noise of the coupled oscillators is below 100 dBc/Hz at a 1-MHz offset when locked to an external reference. To the best of the authors’ knowledge, this is the highest frequency demonstration of coupled oscillators fabricated in a conventional silicon integrated-circuit process

Quantum Enhancement of the Zero-Area Sagnac Interferometer Topology for Gravitational Wave Detection

Only a few years ago, it was realized that the zero-area Sagnac interferometer topology is able to perform quantum nondemolition measurements of position changes of a mechanical oscillator. Here, we experimentally show that such an interferometer can also be efficiently enhanced by squeezed light. We achieved a nonclassical sensitivity improvement of up to 8.2 dB, limited by optical loss inside our interferometer. Measurements performed directly on our squeezed-light laser output revealed squeezing of 12.7 dB. We show that the sensitivity of a squeezed-light enhanced Sagnac interferometer can surpass the standard quantum limit for a broad spectrum of signal frequencies without the need for filter cavities as required for Michelson interferometers. The Sagnac topology is therefore a powerful option for future gravitational-wave detectors, such as the Einstein Telescope, whose design is currently being studied.Comment: 4 pages, 4 figure

A 12MHz Switched-Capacitor Relaxation Oscillator with a Nearly Minimal FoM of -161dBc/Hz

In this work the phase noise performance of relaxation oscillators has been analyzed resulting in simple though precise phase noise expressions. These expressions have lead to a new relaxation oscillator topology, which exploits a noise filtering technique implemented with a switched-capacitor circuit to minimize phase noise. Measurements on a 65nm CMOS design show a sawtooth waveform, a frequency tuning range between 1 and 12MHz and a rather constant frequency tuning gain. At 12MHz oscillation frequency it consumes 90μW while the phase noise is -109dBc/Hz at 100KHz offset frequency. By minimizing and balancing noise contributions of charge and discharge mechanisms, a nearly minimal FoM of -161dBc/Hz has been achieved, which is a 6dB improvement over state-of-the-art

Experimental characterization of frequency dependent squeezed light

We report on the demonstration of broadband squeezed laser beams that show a frequency dependent orientation of the squeezing ellipse. Carrier frequency as well as quadrature angle were stably locked to a reference laser beam at 1064nm. This frequency dependent squeezing was characterized in terms of noise power spectra and contour plots of Wigner functions. The later were measured by quantum state tomography. Our tomograph allowed a stable lock to a local oscillator beam for arbitrary quadrature angles with one degree precision. Frequency dependent orientations of the squeezing ellipse are necessary for squeezed states of light to provide a broadband sensitivity improvement in third generation gravitational wave interferometers. We consider the application of our system to long baseline interferometers such as a future squeezed light upgraded GEO600 detector.Comment: 8 pages, 8 figure

Michelson interferometer with diffractively-coupled arm resonators in second-order Littrow configuration

Michelson-type laser-interferometric gravitational-wave (GW) observatories employ very high light powers as well as transmissively- coupled Fabry-Perot arm resonators in order to realize high measurement sensitivities. Due to the absorption in the transmissive optics, high powers lead to thermal lensing and hence to thermal distortions of the laser beam profile, which sets a limit on the maximal light power employable in GW observatories. Here, we propose and realize a Michelson-type laser interferometer with arm resonators whose coupling components are all-reflective second-order Littrow gratings. In principle such gratings allow high finesse values of the resonators but avoid bulk transmission of the laser light and thus the corresponding thermal beam distortion. The gratings used have three diffraction orders, which leads to the creation of a second signal port. We theoretically analyze the signal response of the proposed topology and show that it is equivalent to a conventional Michelson-type interferometer. In our proof-of-principle experiment we generated phase-modulation signals inside the arm resonators and detected them simultaneously at the two signal ports. The sum signal was shown to be equivalent to a single-output-port Michelson interferometer with transmissively-coupled arm cavities, taking into account optical loss. The proposed and demonstrated topology is a possible approach for future all-reflective GW observatory designs

Basics of RF electronics

RF electronics deals with the generation, acquisition and manipulation of high-frequency signals. In particle accelerators signals of this kind are abundant, especially in the RF and beam diagnostics systems. In modern machines the complexity of the electronics assemblies dedicated to RF manipulation, beam diagnostics, and feedbacks is continuously increasing, following the demands for improvement of accelerator performance. However, these systems, and in particular their front-ends and back-ends, still rely on well-established basic hardware components and techniques, while down-converted and acquired signals are digitally processed exploiting the rapidly growing computational capability offered by the available technology. This lecture reviews the operational principles of the basic building blocks used for the treatment of high-frequency signals. Devices such as mixers, phase and amplitude detectors, modulators, filters, switches, directional couplers, oscillators, amplifiers, attenuators, and others are described in terms of equivalent circuits, scattering matrices, transfer functions; typical performance of commercially available models is presented. Owing to the breadth of the subject, this review is necessarily synthetic and non-exhaustive. Readers interested in the architecture of complete systems making use of the described components and devoted to generation and manipulation of the signals driving RF power plants and cavities may refer to the CAS lectures on Low-Level RF.Comment: 36 pages, contribution to the CAS - CERN Accelerator School: Specialised Course on RF for Accelerators; 8 - 17 Jun 2010, Ebeltoft, Denmar

Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications

In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is -110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm(2) on Si substrate, including DC and RF pads