Generation of terahertz-modulated optical signals using AlGaAs/GaAs laser diodes

The Thesis reports on the research activities carried out under the Semiconductor-Laser Terahertz-Frequency Converters Project at the Department of Electronics and Electrical Engineering, University of Glasgow. The Thesis presents the work leading to the demonstration of reproducible harmonic modelocked operation from a novel design of monolithic semiconductor laser, comprising a compound cavity formed by a 1-D photonic-bandgap (PBG) mirror. Modelocking was achieved at a harmonic of the fundamental round-trip frequency with pulse repetition rates from 131 GHz up to a record-high frequency of 2.1 THz. The devices were fabricated from GaAs/AlGaAs material emitting at a wavelength of 860 nm and incorporated two gain sections with an etched PBG reflector between them, and a saturable absorber section. Autocorrelation studies are reported, which allow the device behaviour for different modelocking frequencies, compound cavity ratios, and type and number of intra-cavity reflectors to be analyzed. The highly reflective PBG microstructures are shown to be essential for subharmonic-free modelocking operation of the high-frequency devices. It was also demonstrated that the multi-slot PBG reflector can be replaced with two separate slots with smaller reflectivity. Some work was also done on the realisation of a dual-wavelength source using a broad-area laser diode in an external grating-loaded cavity. However, the source failed to deliver the spectrally-narrow lines required for optical heterodyning applications. Photomixer devices incorporating a terahertz antenna for optical-to microwave down-conversion were fabricated, however, no down-conversion experiments were attempted. Finally, novel device designs are proposed that exploit the remarkable spectral and modelocking properties of compound-cavity lasers. The ultrafast laser diodes demonstrated in this Project can be developed for applications in terahertz imaging, medicine, ultrafast optical links and atmospheric sensing

Hybridly Integrated Diode Lasers for Emerging Applications: Design, Fabrication, and Characterization

The emerging applications of LiDAR, microresonator based frequency comb, and photon pair generation in photonic integrated circuits (PICs) have attracted lots of research interests recently. The single frequency, high power, narrow-linewidth, tunable semiconductor lasers are highly desired for the implementation of these emerging applications in future PICs. In this dissertation, we use the hybrid integration via edge coupling to obtain the integrated diode lasers for future PICs, since the active chip and the passive chip can be fabricated and optimized independently. We demonstrate hybridly integrated narrow-linewidth, tunable diode lasers in the Indium Phosphide/Gallium Arsenide-silicon nitride (InP/GaAs-Si3N4) platform. Silicon nitride photonic integrated circuits, instead of silicon waveguides that suffer from high optical loss near 1 µm, are chosen to build a tunable external cavity for both InP and GaAs gain chips at the same time. Single frequency lasing at 1.55 µm and 1 µm is simultaneously obtained on a single chip with spectral linewidths of 18-kHz and 70-kHz, a side mode suppression ratio of 52 dB and 46 dB, and tuning range of 46 nm and 38 nm, respectively. The resulting dual-band narrow-linewidth diode lasers have potential for use in a variety of novel applications such as integrated difference-frequency generation, quantum photonics, and nonlinear optics. We also demonstrate one potential application of the dual-band diode laser in beam steering. The dual-band diode laser combined with a waveguide surface grating can provide the beam steering by tuning the wavelength of the light signal. However, the output power of the hybridly integrated diode lasers is still limited. Integrated coherent beam combining (CBC) is a promising solution to overcome this limitation. In this dissertation, coherently combined, integrated diode laser systems are experimentally demonstrated through hybrid integration. A chip-scale coherently combined laser system is experimentally demonstrated in the InP-Si3N4 platform through the manipulation of optical feedbacks at different output ports of the coupled laser cavities. Coherent combining of two InP-based reflective semiconductor amplifiers is obtained by use of the cross-coupling provided by an adiabatic 3 dB coupler in silicon nitride, with a combining efficiency of ~92%. The novel system not only realizes the miniaturization of coherent laser beam combining but also provides a chip-scale platform to study the coherent coupling between coupled laser cavities. Besides, the emerging platforms (i.e., gain chips based on semiconductor quantum dots, silicon-carbide-on-insulator and lithium-niobate-on-insulator) have attracted intense interests in recent years. The hybridly integrated diode lasers through edge coupling are demonstrated in these emerging platforms. In addition, we study the Parity-Time (PT) symmetry in the chip-scale hybrid platform. PT symmetric coupled microresonators with judiciously modulated loss and gain have been widely studied to reveal many non-Hermitian features in optical systems. The phase transition at the exceptional points (EPs) is a unique feature of the PT symmetric non-Hermitian systems. In this dissertation, we propose and demonstrate an electrically pumped, hybridly integrated chip-scale non-Hermitian system, where the optical gain, loss and coupling are separately controlled to allow for the PT symmetry breaking and direct access of the EPs. We use the coupled Fabry-Perot resonators through the hybrid integration of two InP active chips with one Si3N4 passive chip to realize the versatile control of the gain and loss. We first demonstrate the PT symmetry breaking and access of the EPs by investigating the spectral and spatial transition processes of the hybrid system induced by the asymmetric gains in the InP active chips. We then control the loss distribution in the Si3N4 passive chip so that the system loss contrast exceeds the coupling coefficient, which leads to the PT symmetry breaking and coherent addition of the two coupled lasers. Our integrated non-Hermitian optical system in the chip-scale hybrid integration platform successfully bridges the non-Hermitian physics and photonic integrated circuits and is able to expand the practical applications of non-Hermitian optical systems to a whole new stage

Passband flattened binary-tree structured add-drop multiplexers using sion waveguide technology

When writing this introduction I saw the following press release on the Internet: “Nielsen//Netratings reports a record half billion people worldwide now have home internet access‿. The number of home users grew worldwide with 5 % over the last quarter of 2001. The growth was nearly doubled compared to Q3 2001. The growth in Europe was 4.9%, almost equal to the world growth. One in three households in Europe/Middle East and Africa have Internet access, compared with over half in the US. The Netherlands has 52 % of the households connected to the Internet and 82 % of the computers is connected to the Internet. Another press release also fromNielsen//Netratings was titled as “Broadband Usage Outpaces Narrowband for the first time.‿ 1.19 billion of the total 2.3 billion hours was spent by broadband surfers online in January 2002 in the US. The broadband time spent in January 2002 was 64 % higher than in January 2001. Nearly 21.9 million surfers (in the US) at-home accessed the Internet via broadband connection in January 2002 compared to 13.1 million in January 2001, a boost of 67% in one year time. So there is an unstoppable march towards broadband. (See www.nielsen-netratings.com) This demand can be fulfilled with the tremendous bandwidth of the optical fiber of 30 THz (1420-1670 nm). It is not possible to directly address this complete band, since the current maximum speed of the electronics and modulators is 40-100 GHZ. Wavelength division multiplexing (WDM) is used to divide the band in multiple sub bands. The spacing between the sub band channels is defined by the ITU grid. Common spacings between channels are 12.5, 25, 50, 100 and 200 GHz. The device that combines these channels onto one fiber is called a Multiplexer (Mux) and the device that does the opposite, spatial separation of frequency channels onto different fibers, is called a demultiplexer (Demux). When Mux and Demux are combined it is possible to select only one (or more) channel to be dropped or added and leaving the remaining channels undisturbed. Such a device is called an Add-drop multiplexer(ADM). Optical transmission systems 3.28 Tbit/s over a few hundred of kilometers[Nielsen 2000] or 2 Tbit/s over almost ten thousand kilometers [Yamada 2002] have already be reported

Hybrid integrated semiconductor lasers with silicon nitride feedback circuits

Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.Comment: 25 pages, 16 figure

High Efficiency Silicon Photonic Interconnects

Silicon photonic has provided an opportunity to enhance future processor speed by replacing copper interconnects with an on chip optical network. Although photonics are supposed to be efficient in terms of power consumption, speed, and bandwidth, the existing silicon photonic technologies involve problems limiting their efficiency. Examples of limitations to efficiency are transmission loss, coupling loss, modulation speed limited by electro-optical effect, large amount of energy required for thermal control of devices, and the bandwidth limit of existing optical routers. The objective of this dissertation is to investigate novel materials and methods to enhance the efficiency of silicon photonic devices. The first part of this dissertation covers the background, theory and design of on chip optical interconnects, specifically silicon photonic interconnects. The second part describes the work done to build a 300mm silicon photonic library, including its process flow, comprised of basic elements like electro-optical modulators, germanium detectors, Wavelength Division Multiplexing (WDM) interconnects, and a high efficiency grating coupler. The third part shows the works done to increase the efficiency of silicon photonic modulators, unitizing the χ(3) nonlinear effect of silicon nanocrystals to make DC Kerr effect electro-optical modulator, combining silicon with lithium niobate to make χ(2) electro-optical modulators on silicon, and increasing the efficiency of thermal control by incorporating micro-oven structures in electro-optical modulators. The fourth part introduces work done on dynamic optical interconnects including a broadband optical router, single photon level adiabatic wavelength conversion, and optical signal delay. The final part summarizes the work and talks about future development

The Third International Symposium on Space Terahertz Technology: Symposium proceedings

Papers from the symposium are presented that are relevant to the generation, detection, and use of the terahertz spectral region for space astronomy and remote sensing of the Earth's upper atmosphere. The program included thirteen sessions covering a wide variety of topics including solid-state oscillators, power-combining techniques, mixers, harmonic multipliers, antennas and antenna arrays, submillimeter receivers, and measurement techniques

3D mapping of nanoscale physical properties of VCSEL devices

There is clear lack of methods that allows studies of the nanoscale structure of the VCSEL devices1 that are mainly focused on the roughness of the DBR, or using FIB cross-sectioning and TEM analysis of failed devices to observe the mechanism of the degradation. Here we present a recently developed advanced approach that combines Ar-ion nano-cross-sectioning with material sensitive SPM2 to reveal the internal structure of the VCSEL across the whole stack of top and bottom DBR including active area. We report for the first time the direct observation of local mechanical properties, electric potential and conductance through the 3D VCSEL stack. In order to achieve this, we use beam exit cross-section polishing that creates an oblique section with sub-nm surface roughness through the whole VCSEL structure that is fully suitable for the subsequent cross-sectional SPM (xSPM) studies. We used three different SPM measurement modes – nanomechanical local elastic moduli mapping via Ultrasonic Force Microscopy (UFM) 3, surface potential mapping via Kelvin Probe Force Microscopy (KPFM) and mapping of injected current (local conductivity) via Scanning Spreading Resistance Microscopy (SSRM). xSPM allowed to observe the resulting geometry of the whole device, including active cavity multiple quantum wells (MQW), to obtain profiles of differential doping of the DBR stack, profile of electric potential in the active cavity, and spatial variation of current injection in the individual QW in MQW area. Moreover, by applying forward bias to the VCSEL to initiate laser emission, we were able to observe distribution of the potential in the working regime, paving the way to understanding the 3D current flow in the complete device. Finally, we use finite element modelling (FEM) that confirm the experimental results that of the measurements of the local doping profiles and charge distribution in the active area of the VCSEL around the oxide current confinement aperture. While we show that the new xSPM methodology allowed advanced in-situ studies of VCSELs, it establishes a highly efficient characterisation platform for much broader area of compound semiconductor materials and devices. REFERENCES. 1. D. T. Mathes, R. Hull, K. Choquette, K. Geib, A. Allerman, J. Guenter, B. Hawkins and B. Hawthorne, in Vertical-Cavity Surface-Emitting Lasers Vii, edited by C. Lei and S. P. Kilcoyne (2003), Vol. 4994, pp. 67-82. 2. A. J. Robson, I. Grishin, R. J. Young, A. M. Sanchez, O. V. Kolosov and M. Hayne, Acs Applied Materials & Interfaces 5 (8), 3241-3245 (2013). 3. J. L. Bosse, P. D. Tovee, B. D. Huey and O. V. Kolosov, Journal of Applied Physics 115 (14), 144304 (2014)