Analog Circuits in Ultra-Deep-Submicron CMOS

Modern and future ultra-deep-submicron (UDSM) technologies introduce several new problems in analog design. Nonlinear output conductance in combination with reduced voltage gain pose limits in linearity of (feedback) circuits. Gate-leakage mismatch exceeds conventional matching tolerances. Increasing area does not improve matching any more, except if higher power consumption is accepted or if active cancellation techniques are used. Another issue is the drop in supply voltages. Operating critical parts at higher supply voltages by exploiting combinations of thin- and thick-oxide transistors can solve this problem. Composite transistors are presented to solve this problem in a practical way. Practical rules of thumb based on measurements are derived for the above phenomena

DESIGN OF A LOW POWER FLIP-FLOP USING CMOS DEEP SUBMICRON TECHNOLOGY

This paper enumerates low power, high speed design of flip-flop having less number of transistors and only one transistor being clocked by short pulse train which is true single phase clocking (TSPC) flip-flop. Compared to Conventional flip-flop, it has 5 Transistors and one transistor clocked, thus has lesser size and lesser power consumption. It can be used in various applications like digital VLSI clocking system, buffers, registers, microprocessors etc. The analysis for various flip flops and latches for power dissipation and propagation delays at 0.13μm and 0.35μm technologies is carried out. The leakage power increases as technology is scaled down. The leakage power is reduced by using best technique among all run time techniques viz. MTCMOS. Thereby comparison of different conventional flip-flops, latches and TSPC flip-flop in terms of power consumption, propagation delays and product of power dissipation and propagation delay with SPICE simulation results is presented

A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

Estimation of leakage power and delay in CMOS circuits using parametric variation

SummaryWith the advent of deep-submicron technologies, leakage power dissipation is a major concern for scaling down portable devices that have burst-mode type integrated circuits. In this paper leakage reduction technique HTLCT (High Threshold Leakage Control Transistor) is discussed. Using high threshold transistors at the place of low threshold leakage control transistors, result in more leakage power reduction as compared to LCT (leakage control transistor) technique but at the scarifies of area and delay. Further, analysis of effect of parametric variation on leakage current and propagation delay in CMOS circuits is performed. It is found that the leakage power dissipation increases with increasing temperature, supply voltage and aspect ratio. However, opposite pattern is noticed for the propagation delay. Leakage power dissipation for LCT NAND gate increases up to 14.32%, 6.43% and 36.21% and delay decreases by 22.5%, 42% and 9% for variation of temperature, supply voltage and aspect ratio. Maximum peak of equivalent output noise is obtained as 127.531nV/Sqrt(Hz) at 400mHz

Single Event Effects in the Pixel readout chip for BTeV

In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 um CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.Comment: 15 pages, 6 Postscript figure

Analysis of Dynamic Logic Circuits in Deep Submicron CMOS Technologies

Dynamic logic circuits are utilized to minimize the delay in the critical path of high-performance designs such as the datapath circuits in state-of-the-art microprocessors. However, as integrated circuits (ICs) scale to the very deep submicron (VDSM) regime, dynamic logic becomes susceptible to a variety of failure modes due to decreasing noise margins and increasing leakage currents. The objective of this thesis is to characterize the performance of dynamic logic circuits in VDSM technologies and to evaluate various design strategies to mitigate the effects of leakage currents and small noise margins

Novel techniques for the design and practical realization of switched-capacitor circuits in deep-submicron CMOS technologies

Dissertação apresentada para obtenção do Grau de Doutor em Engenharia Electrotécnica e de Computadores pela Universidade Nova de Lisboa, Faculdade de Ciências e TecnologiaSwitches presenting high linearity are more and more required in switched-capacitor circuits,namely in 12 to 16 bits resolution analog-to-digital converters. The CMOS technology evolves continuously towards lower supply voltages and, simultaneously, new design techniques are necessary to fulfill the realization of switches exhibiting a high dynamic range and a distortion compatible with referred resolutions. Moreover, with the continuously downing of the sizes, the physic constraints of the technology must be considered to avoid the excessive stress of the devices when relatively high voltages are applied to the gates. New switch-linearization techniques, with high reliability, must be necessarily developed and demonstrated in CMOS integrated circuits. Also, the research of new structures of circuits with switched-capacitor is permanent. Simplified and efficient structures are mandatory, adequate to the new demands emerging from the proliferation of portable equipments, necessarily with low energy consumption while assuring high performance and multiple functions. The work reported in this Thesis comprises these two areas. The behavior of the switches under these new constraints is analyzed, being a new and original solution proposed, in order to maintain the performance. Also, proposals for the application of simpler clock and control schemes are presented, and for the use of open-loop structures and amplifiers with localfeedback. The results, obtained in laboratory or by simulation, assess the feasibility of the presented proposals