Miniaturized Transistors, Volume II

In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before

Intelligent Circuits and Systems

ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities for the social and economic benefits of society.　 This conference bridges the gap between academics and R&D institutions, social visionaries, and experts from all strata of society to present their ongoing research activities and foster research relations between them. It provides opportunities for the exchange of new ideas, applications, and experiences in the field of smart technologies and finding global partners for future collaboration. The ICICS-2020 was conducted in two broad categories, Intelligent Circuits & Intelligent Systems and Emerging Technologies in Electrical Engineering

Journal of Telecommunications and Information Technology, 2004, nr 1

kwartalni

STUDY OF CMOS COMPATIBLE RUTHENIUM OXIDE SCHOTTKY CONTACTS FOR ALGAN/GAN AND INALN/GAN DIODES AND HIGH MOBILITY TRANSISTORS GROWN ON SILICON (111) SUBSTRATES

Ph.DDOCTOR OF PHILOSOPH

Métodos de extracción de parámetros de un circuito equivalente de pequeña señal para transistores LDMOS de potencia para aplicaciones de RF

En la actualidad, la gran cantidad de aplicaciones que surgen dentro del ámbito de la radiofrecuencia hacen que el desarrollo de dispositivos dentro de este campo sea constante. Estos dispositivos cada vez requieren mayor potencia para frecuencias de trabajo elevadas, lo que sugiere abrir vías de investigación sobre dispositivos de potencia que ofrezcan los resultados deseados para altas frecuencias de operación (GHz). Dentro de este ámbito, el objetivo principal de este proyecto es el de realizar un estudio sobre este tipo de dispositivos, siendo el transistor LDMOS el candidato elegido para tal efecto, debido a su buen comportamiento en frecuencia para tensiones elevadas de funcionamiento.Actualment, la gran quantitat d'aplicacions que apareixen dins l'àmbit de la radiofreqüència fan que el desenvolupament de dispositius en aquest camp sigui constant. Aquests dispositius cada vegada treballen a una potència més elevada amb altes freqüències d'operació, cosa que ens suggereix obrir branques d'investigació sobre dispositius de potència que siguin capaços d'oferir els resultats desitjats per freqüències de treball elevades (GHz). En aquest entorn, l'objectiu principal d'aquest projecte serà el de realitzar un estudi sobre aquest tipus de dispositius, essent el transistor LDMOS el candidat elegit, atès el seu bon comportament en freqüència a tensions elevades de funcionament.At the present time, the great amount of applications that arise within the scope of the radio frequency does that the development of devices within this field is constant. These devices every time require greater power for elevated frequencies of work, which suggests to open investigation routes on power devices which they offer the results wished for high frequencies of operation (GHz). Within this scope, the primary target of this project is the one to make a study on this type of devices, being transistor LDMOS the candidate chosen for such effect, due to its good behaviour in frequency for elevated tensions of operation

Design and analysis of wideband passive microwave devices using planar structures

A selected volume of work consisting of 84 published journal papers is presented to demonstrate the contributions made by the author in the last seven years of his work at the University of Queensland in the area of Microwave Engineering. The over-arching theme in the author’s works included in this volume is the engineering of novel passive microwave devices that are key components in the building of any microwave system. The author’s contribution covers innovative designs, design methods and analyses for the following key devices and associated systems: Wideband antennas and associated systems Band-notched and multiband antennas Directional couplers and associated systems Power dividers and associated systems Microwave filters Phase shifters Much of the motivation for the work arose from the desire to contribute to the engineering o

Novel MMIC design process using waveform engineering

It has always been the case that talented individuals with an innate understanding of their subject have been able to produce works of outstanding performance. The purpose of engineering science is to define ways in which such achievements can be made on a regular,predictable basis with a high degree of confidence in success. Some tools, such as computers, have enabled an increase in speed and accuracy, whilst others have given a dramatic increase in the insight into the operation or behavior of materials; the electron microscope for instance. Still others have enabled the creation of devices on a scale unimaginable to our predecessors, Molecular Beam Epitaxy for example. This work is the product of the availability of an understanding of complex theory on microwave transistor operation, significant increases in mathematical processing and data handling, and the assembly of a ‘tool’ that not only allows the measurement of high frequency waveforms, but their manipulation to simultaneously create the environments envisioned by the design engineer. It extends the operation of previous narrow band active load pull measurement systems to 40GHz and importantly facilitates the design of high efficiency modes at X band. The main tenant of this work is to propose that rather than the linear approach of characterisation, design, test, re-iterate, that has been the standard approach to MMIC design to date, the first three stages should be integrated into a single approach which should obviate the need for design reiteration. The result of this approach should be better performance from amplifier designs, greater probability of success first time, and lower costs through less wafer real estate being consumed and fewer sign ‘spins’