A Scalable 6-to-18 GHz Concurrent Dual-Band Quad-Beam Phased-Array Receiver in CMOS

This paper reports a 6-to-18 GHz integrated phased- array receiver implemented in 130-nm CMOS. The receiver is easily scalable to build a very large-scale phased-array system. It concurrently forms four independent beams at two different frequencies from 6 to 18 GHz. The nominal conversion gain of the receiver ranges from 16 to 24 dB over the entire band while the worst-case cross-band and cross-polarization rejections are achieved 48 dB and 63 dB, respectively. Phase shifting is performed in the LO path by a digital phase rotator with the worst-case RMS phase error and amplitude variation of 0.5° and 0.4 dB, respectively, over the entire band. A four-element phased-array receiver system is implemented based on four receiver chips. The measured array patterns agree well with the theoretical ones with a peak-to-null ratio of over 21.5 dB

Automated design of microwave discrete tuning differential capacitance circuits in Si-integrated technologies

A genetic algorithm used to design radio-frequency binary-weighted differential switched capacitor arrays (RFDSCAs) is presented in this article. The algorithm provides a set of circuits all having the same maximum performance. This article also describes the design, implementation, and measurements results of a 0.25 lm BiCMOS 3-bit RFDSCA. The experimental results show that the circuit presents the expected performance up to 40 GHz. The similarity between the evolutionary solutions, circuit simulations, and measured results indicates that the genetic synthesis method is a very useful tool for designing optimum performance RFDSCAs

Device modelling for bendable piezoelectric FET-based touch sensing system

Flexible electronics is rapidly evolving towards devices and circuits to enable numerous new applications. The high-performance, in terms of response speed, uniformity and reliability, remains a sticking point. The potential solutions for high-performance related challenges bring us back to the timetested silicon based electronics. However, the changes in the response of silicon based devices due to bending related stresses is a concern, especially because there are no suitable models to predict this behavior. This also makes the circuit design a difficult task. This paper reports advances in this direction, through our research on bendable Piezoelectric Oxide Semiconductor Field Effect Transistor (POSFET) based touch sensors. The analytical model of POSFET, complimented with Verilog-A model, is presented to describe the device behavior under normal force in planar and stressed conditions. Further, dynamic readout circuit compensation of POSFET devices have been analyzed and compared with similar arrangement to reduce the piezoresistive effect under tensile and compressive stresses. This approach introduces a first step towards the systematic modeling of stress induced changes in device response. This systematic study will help realize high-performance bendable microsystems with integrated sensors and readout circuitry on ultra-thin chips (UTCs) needed in various applications, in particular, the electronic skin (e-skin)

Design of Power/Analog/Digital Systems Through Mixed-Level Simulations

In recent years the development of the applications in the field of telecommunications, data processing, control, renewable energy generation, consumer and automotive electronics determined the need for increasingly complex systems, also in shorter time to meet the growing market demand. The increasing complexity is mainly due to the mixed nature of these systems that must be developed to accommodate the new functionalities and to satisfy the more stringent performance requirements of the emerging applications. This means a more complex design and verification process. The key to managing the increased design complexity is a structured and integrated design methodology which allows the sharing of different circuit implementations that can be at transistor level and/or at a higher level (i.e.HDL languages).In order to expedite the mixed systems design process it is necessary to provide: an integrated design methodology; a suitable supporting tool able to manage the entire design process and design complexity and its successive verification.It is essential that the different system blocks (power, analog, digital), described at different level of abstraction, can be co-simulated in the same design context. This capability is referred to as mixed-level simulation.One of the objectives of this research is to design a mixed system application referred to the control of a coupled step-up dc-dc converter. This latter consists of a power stage designed at transistor-level, also including accurate power device models, and the analog controller implemented using VerilogA modules. Digital controllers are becoming very attractive in dc-dc converters for their programmability, ability to implement sophisticated control schemes, and ease of integration with other digital systems. Thus, in this dissertation it will be presented a detailed design of a Flash Analog-to-Digital Converter (ADC). The designed ADC provides medium-high resolution associated to high-speed performance. This makes it useful not only for the control application aforementioned but also for applications with huge requirements in terms of speed and signal bandwidth. The entire design flow of the overall system has been conducted in the Cadence Design Environment that also provides the ability to mixed-level simulations. Furthermore, the technology process used for the ADC design is the IHP BiCMOS 0.25 µm by using 50 GHz NPN HBT devices

High-speed Time-interleaved Digital-to-Analog Converter (TI-DAC) for Self-Interference Cancellation Applications

Nowadays, the need for higher data-rate is constantly growing to enhance the quality of the daily communication services. The full-duplex (FD) communication is exemplary method doubling the data-rate compared to half-duplex one. However, part of the strong output signal of the transmitter interferes to the receiver-side because they share the same antenna with limited attenuation and, as a result, the receiver’s performance is corrupted. Hence, it is critical to remove the leakage signal from the receiver’s path by designing another block called self-interference cancellation (SIC). The main goal of this dissertation is to develop the SIC block embedded in the current-mode FD receivers. To this end, the regenerated cancellation current signal is fed to the inputs of the base-band filter and after the mixer of a (direct-conversion) current-mode FD receiver. Since the pattern of the transmitter (the digital signal generated by DSP) is known, a high-speed digital-to-Analog converter (DAC) with medium-resolution can perfectly suppress main part of the leakage on the receiver path. A capacitive DAC (CDAC) is chosen among the available solutions because it is compatible with advanced CMOS technology for high-speed application and the medium-resolution designs. Although the main application of the design is to perform the cancellation, it can also be employed as a stand-alone DAC in the Analog (I/Q) transmitter. The SIC circuitry includes a trans-impedance amplifier (TIA), two DACs, high-speed digital circuits, and built-in-self-test section (BIST). According to the available specification for full-duplex communication system, the resolution and working frequency of the CDAC are calculated (designed) equal to 10-bit (3 binary+ 2 binary + 5 thermometric) and 1GHz, respectively. In order to relax the design of the TIA (settling time of the DAC), the CDAC implements using 2-way time-interleaved (TI) manner (the effective SIC frequency equals 2GHz) without using any calibration technique. The CDAC is also developed with the split-capacitor technique to lower the negative effects of the conventional binary-weighted DAC. By adding one extra capacitor on the left-side of the split-capacitor, LSB-side, the value of the split-capacitor can be chosen as an integer value of the unit capacitor. As a result, it largely enhances the linearity of the CADC and cancellation performance. If the block works as a stand-alone DAC with non-TI mode, the digital input code representing a Sinus waveform with an amplitude 1dB less than full-scale and output frequency around 10.74MHz, chosen by coherent sampling rule, then the ENOB, SINAD, SFDR, and output signal are 9.4-bit, 58.2 dB, 68.4dBc, and -9dBV. The simulated value of the |DNL| (static linearity) is also less than 0.7. The similar simulation was done in the SIC mode while the capacitive-array woks in the TI mode and cancellation current is set to the full-scale. Hence, the amount of cancelling the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. equals 51.3dB, 15.1 dB, 24dBc, 66.4 dB. The designed SIC cannot work as a closed-loop design. The layout was optimally drawn in order to minimize non-linearity, the power-consumption of the decoders, and reduce the complexity of the DAC. By distributing the thermometric cells across the array and using symmetrical switching scheme, the DAC is less subjected to the linear and gradient effect of the oxide. Based on the post-layout simulation results, the deviation of the design after drawing the layout is studied. To compare the results of the schematic and post-layout designs, the exact conditions of simulation above (schematic simulations) are used. When the block works as a stand-alone CDAC, the ENOB, SINAD, SFDR are 8.5-bit, 52.6 dB, 61.3 dBc. The simulated value of the |DNL| (static linearity) is also limited to 1.3. Likewise, the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. are equal to 44dB, 11.7 dB, 19 dBc, 55.7 dB

RF Power Transfer, Energy Harvesting, and Power Management Strategies

Energy harvesting is the way to capture green energy. This can be thought of as a recycling process where energy is converted from one form (here, non-electrical) to another (here, electrical). This is done on the large energy scale as well as low energy scale. The former can enable sustainable operation of facilities, while the latter can have a significant impact on the problems of energy constrained portable applications. Different energy sources can be complementary to one another and combining multiple-source is of great importance. In particular, RF energy harvesting is a natural choice for the portable applications. There are many advantages, such as cordless operation and light-weight. Moreover, the needed infra-structure can possibly be incorporated with wearable and portable devices. RF energy harvesting is an enabling key player for Internet of Things technology. The RF energy harvesting systems consist of external antennas, LC matching networks, RF rectifiers for ac to dc conversion, and sometimes power management. Moreover, combining different energy harvesting sources is essential for robustness and sustainability. Wireless power transfer has recently been applied for battery charging of portable devices. This charging process impacts the daily experience of every human who uses electronic applications. Instead of having many types of cumbersome cords and many different standards while the users are responsible to connect periodically to ac outlets, the new approach is to have the transmitters ready in the near region and can transfer power wirelessly to the devices whenever needed. Wireless power transfer consists of a dc to ac conversion transmitter, coupled inductors between transmitter and receiver, and an ac to dc conversion receiver. Alternative far field operation is still tested for health issues. So, the focus in this study is on near field. The goals of this study are to investigate the possibilities of RF energy harvesting from various sources in the far field, dc energy combining, wireless power transfer in the near field, the underlying power management strategies, and the integration on silicon. This integration is the ultimate goal for cheap solutions to enable the technology for broader use. All systems were designed, implemented and tested to demonstrate proof-of concept prototypes

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields