one6G white paper, 6G technology overview:Second Edition, November 2022

6G is supposed to address the demands for consumption of mobile networking services in 2030 and beyond. These are characterized by a variety of diverse, often conflicting requirements, from technical ones such as extremely high data rates, unprecedented scale of communicating devices, high coverage, low communicating latency, flexibility of extension, etc., to non-technical ones such as enabling sustainable growth of the society as a whole, e.g., through energy efficiency of deployed networks. On the one hand, 6G is expected to fulfil all these individual requirements, extending thus the limits set by the previous generations of mobile networks (e.g., ten times lower latencies, or hundred times higher data rates than in 5G). On the other hand, 6G should also enable use cases characterized by combinations of these requirements never seen before, e.g., both extremely high data rates and extremely low communication latency). In this white paper, we give an overview of the key enabling technologies that constitute the pillars for the evolution towards 6G. They include: terahertz frequencies (Section 1), 6G radio access (Section 2), next generation MIMO (Section 3), integrated sensing and communication (Section 4), distributed and federated artificial intelligence (Section 5), intelligent user plane (Section 6) and flexible programmable infrastructures (Section 7). For each enabling technology, we first give the background on how and why the technology is relevant to 6G, backed up by a number of relevant use cases. After that, we describe the technology in detail, outline the key problems and difficulties, and give a comprehensive overview of the state of the art in that technology. 6G is, however, not limited to these seven technologies. They merely present our current understanding of the technological environment in which 6G is being born. Future versions of this white paper may include other relevant technologies too, as well as discuss how these technologies can be glued together in a coherent system

Inside all-optical networks

Imagine a world where lightning speed Internet is as common as telephones today. Imagine when light, the fastest moving thing in the universe, is the signal-carrying transport medium. Imagine when bandwidth no more remains a constraint for any application. Imagine when imagination is the only limit! This all can be made possible with only one technology and that is optical communication. Optical networks have thus far provided a realization to a greater extent to the unlimited bandwidth dreams of this era, but as the demands are increasing, the electro-optic conversions seem to become bottlenecks in blended optical networks. The only answer to this is a complete migration to `All-Optical Networks\u27 (AONs) which promise an end-to-end optical transmission. This thesis will investigate various aspects of all-optical networks and prove that AONs perform better than currently existing electro-optical networks. In today\u27s\u27 electro-optical networks, routing and switching is performed in electronic domain. Performance analysis of electro-optical and all-optical networks would include node utilization, link utilization and percentage of traffic routed. It will be shown through Opnet Transport Planner simulations that AONs work better under various traffic conditions. The coming decade will see a great boom in demands on telecommunications networks. The development in bandwidth-hungry applications like real-time video transmission, telemedicine, distance learning and video on demand require both an unlimited amount of bandwidth and dependable QoS. It is well understood that electrically switched networks and copper cables will not be able to meet the future network demands effectively. The world has already agreed to move towards optical communication techniques through the introduction of fiber in access parts of the networks replacing copper. Now the race is to bring optics in higher layers of OSI reference model. Optical communication is on the horizon, and new discoveries are still underway to add to the value of available bandwidth through this technology. My research thesis will primarily focus on the design, architecture and network properties of AONs and challenges being faced by AONs in commercial deployment. Optical components required in AONs will be explored. A comparison between AONs and electro-optical networks will also be shown through optical transport planner simulations

Architecture aware parallel programming in Glasgow parallel Haskell (GPH)

General purpose computing architectures are evolving quickly to become manycore and hierarchical: i.e. a core can communicate more quickly locally than globally. To be effective on such architectures, programming models must be aware of the communications hierarchy. This thesis investigates a programming model that aims to share the responsibility of task placement, load balance, thread creation, and synchronisation between the application developer and the runtime system. The main contribution of this thesis is the development of four new architectureaware constructs for Glasgow parallel Haskell that exploit information about task size and aim to reduce communication for small tasks, preserve data locality, or to distribute large units of work. We define a semantics for the constructs that specifies the sets of PEs that each construct identifies, and we check four properties of the semantics using QuickCheck. We report a preliminary investigation of architecture aware programming models that abstract over the new constructs. In particular, we propose architecture aware evaluation strategies and skeletons. We investigate three common paradigms, such as data parallelism, divide-and-conquer and nested parallelism, on hierarchical architectures with up to 224 cores. The results show that the architecture-aware programming model consistently delivers better speedup and scalability than existing constructs, together with a dramatic reduction in the execution time variability. We present a comparison of functional multicore technologies and it reports some of the first ever multicore results for the Feedback Directed Implicit Parallelism (FDIP) and the semi-explicit parallelism (GpH and Eden) languages. The comparison reflects the growing maturity of the field by systematically evaluating four parallel Haskell implementations on a common multicore architecture. The comparison contrasts the programming effort each language requires with the parallel performance delivered. We investigate the minimum thread granularity required to achieve satisfactory performance for three implementations parallel functional language on a multicore platform. The results show that GHC-GUM requires a larger thread granularity than Eden and GHC-SMP. The thread granularity rises as the number of cores rises

Advanced management techniques for many-core communication systems

The way computer processors are built is changing. Nowadays, computer processor performance is increased by adding more processing cores on a single chip instead of making processors larger and faster. The traditional approach is no longer viable, due to limits in transistor scaling. Both industry and academia agree that scaling the number of processing cores to hundreds or thousands on a single chip is the only way to scale computer processor performance from now on. Consequently, the performance of these future many-core systems with thousands of cores will heavily depend on the Network-on-Chip (NoC) architecture to provide scalable communication. Therefore, as the number of cores increases the locality will only become more important. Communication locality is essential to reduce latency and increase performance. Many-core systems should be designed such that cores communicate mainly to the neighbouring cores, in order to minimise the communication cost. We investigate the network performance of different topologies using the ITRS physical data for the year 2023. For this reason, we propose abstract synthetic traffic generation models to explore the locality behaviour in many-core NoC systems. Using the synthetic traffic models - group clustering model and ring clustering model - traffic distance metrics may be adjusted with locality parameters. We choose two many-core NoC architectures - distributed memory architecture and shared memory architecture - to examine whether enforcing locality on different architectures may have a diverse effect on the network performance of different topologies. Distributed memory architecture uses the message passing method of communication to communicate between cores. Our results show that the degree of locality and the clustering model strongly affect the performance of the network. Scale-invariant topologies, such as the fat quadtree, perform worse than flat ones because the reduced hop count is outweighed by the longer wire delays. In shared memory architecture, threads communicate with each other by storing data in shared cache lines. We design a hierarchical cache model that benefits from communication locality because many-core cache hierarchy that fails to exploit locality may end up having more cores delayed, thereby decreasing the network performance. Our results show that the locality model of thread placement and the distance of placing them significantly affect the NoC performance. Furthermore, they show that scale-invariant topologies perform better than flat topologies. Then, we demonstrate that implementing directory-based cache coherency has only a small overhead on the cache size. Using cache coherency protocol in our proposed hierarchical cache model, we show that network performance decreases only slightly. Hence, cache coherency scales, and it is possible to have shared memory architecture with thousands of cores

Optical flow switched networks

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Includes bibliographical references (p. 253-279).In the four decades since optical fiber was introduced as a communications medium, optical networking has revolutionized the telecommunications landscape. It has enabled the Internet as we know it today, and is central to the realization of Network-Centric Warfare in the defense world. Sustained exponential growth in communications bandwidth demand, however, is requiring that the nexus of innovation in optical networking continue, in order to ensure cost-effective communications in the future. In this thesis, we present Optical Flow Switching (OFS) as a key enabler of scalable future optical networks. The general idea behind OFS-agile, end-to-end, all-optical connections-is decades old, if not as old as the field of optical networking itself. However, owing to the absence of an application for it, OFS remained an underdeveloped idea-bereft of how it could be implemented, how well it would perform, and how much it would cost relative to other architectures. The contributions of this thesis are in providing partial answers to these three broad questions. With respect to implementation, we address the physical layer design of OFS in the metro-area and access, and develop sensible scheduling algorithms for OFS communication. Our performance study comprises a comparative capacity analysis for the wide-area, as well as an analytical approximation of the throughput-delay tradeoff offered by OFS for inter-MAN communication. Lastly, with regard to the economics of OFS, we employ an approximate capital expenditure model, which enables a throughput-cost comparison of OFS with other prominent candidate architectures. Our conclusions point to the fact that OFS offers significant advantage over other architectures in economic scalability.(cont.) In particular, for sufficiently heavy traffic, OFS handles large transactions at far lower cost than other optical network architectures. In light of the increasing importance of large transactions in both commercial and defense networks, we conclude that OFS may be crucial to the future viability of optical networking.by Guy E. Weichenberg.Ph.D

Reliability-aware circuit design to mitigate impact of device defects and variability in emerging memristor-based applications

In the last decades, semiconductor industry has fostered a fast downscale in technology, propelling the large scale integration of CMOS-based systems. The benefits in miniaturization are numerous, highlighting faster switching frequency, lower voltage supply and higher device density. However, this aggressive scaling trend it has not been without challenges, such as leakage currents, yield reduction or the increase in the overall system power dissipation. New materials, changes in the device structures and new architectures are key to keep the miniaturization trend. It is foreseen that 2D integration will eventually come to an insurmountable physical and economic limit, in which new strategic directions are required, such as the development of new device structures, 3D architectures or heterogeneous systems that takes advantage of the best of different technologies, both the ones already consolidated as well as emergent ones that provide performance and efficiency improvements in applications. In this context, memristor arises as one of several candidates in the race to find suitable emergent devices. Memristor, a blend of the words memory and resistor, is a passive device postulated by Leon Chua in 1971. In contrast with the other fundamental passive elements, memristors have the distinctive feature of modifying their resistance according to the charge that passes through these devices, and remaining unaltered when charge no longer flows. Although when it appeared no physical device implementation was acknowledged, HP Labs claimed in 2008 the manufacture of the first real memristor. This milestone triggered an unexpectedly high research activity about memristors, both in searching new materials and structures as well as in potential applications. Nowadays, memristors are not only appreciated in memory systems by their nonvolatile storage properties, but in many other fields, such as digital computing, signal processing circuits, or non-conventional applications like neuromorphic computing or chaotic circuits. In spite of their promising features, memristors show a primarily downside: they show significant device variation and limited lifetime due degradation compared with other alternatives. This Thesis explores the challenges that memristor variation and malfunction imposes in potential applications. The main goal is to propose circuits and strategies that either avoid reliability problems or take advantage of them. Throughout a collection of scenarios in which reliability issues are present, their impact is studied by means of simulations. This thesis is contextualized and their objectives are exposed in Chapter 1. In Chapter 2 the memristor is introduced, at both conceptual and experimental levels, and different compact levels are presented to be later used in simulations. Chapter 3 deepens in the phenomena that causes the lack of reliability in memristors, and models that include these defects in simulations are provided. The rest of the Thesis covers different applications. Therefore, Chapter 4 exhibits nonvolatile memory systems, and specifically an online test method for faulty cells. Digital computing is presented in Chapter 5, where a solution for the yield reduction in logic operations due to memristors variability is proposed. Lastly, Chapter 6 reviews applications in the analog domain, and it focuses in the exploitation of results observed in faulty memristor-based interconnect mediums for chaotic systems synchronization purposes. Finally, the Thesis concludes in Chapter 7 along with perspectives about future work.Este trabajo desarrolla un novedoso dispositivo condensador basado en el uso de la nanotecnología. El dispositivo parte del concepto existente de metal-aislador-metal (MIM), pero en lugar de una capa aislante continua, se utilizan nanopartículas dieléctricas. Las nanopartículas son principalmente de óxido de silicio (sílice) y poliestireno (PS) y los valores de diámetro son 255nm y 295nm respectivamente. Las nanopartículas contribuyen a una alta relación superficie/volumen y están fácilmente disponibles a bajo costo. La tecnología de depósito desarrollada en este trabajo se basa en la técnica de electrospray, que es una tecnología de fabricación ascendente (bottom-up) que permite el procesamiento por lotes y logra un buen compromiso entre una gran superficie y un bajo tiempo de depósito. Con el objetivo de aumentar la superficie de depósito, la configuración de electrospray ha sido ajustada para permitir áreas de depósito de 1cm2 a 25cm2. El dispositivo fabricado, los llamados condensadores de metal aislante de nanopartículas (NP-MIM) ofrecen valores de capacidad más altos que un condensador convencional similar con una capa aislante continua. En el caso de los NP-MIM de sílice, se alcanza un factor de hasta 1000 de mejora de la capacidad, mientras que los NP-MIM de poliestireno exhibe una ganancia de capacidad en el rango de 11. Además, los NP-MIM de sílice muestran comportamientos capacitivos en específicos rangos de frecuencias que depende de la humedad y el grosor de la capa de nanopartículas, mientras que los NP-MIM de poliestireno siempre mantienen su comportamiento capacitivo. Los dispositivos fabricados se han caracterizado mediante medidas de microscopía electrónica de barrido (SEM) complementadas con perforaciones de haz de iones focalizados (FIB) para caracterizar la topografía de los NP-MIMs. Los dispositivos también se han caracterizado por medidas de espectroscopia de impedancia, a diferentes temperaturas y humedades. El origen de la capacitancia aumentada está asociado en parte a la humedad en las interfaces de las nanopartículas. Se ha desarrollado un modelo de un circuito basado en elementos distribuidos para ajustar y predecir el comportamiento eléctrico de los NP-MIMs. En resumen, esta tesis muestra el diseño, fabricación, caracterización y modelización de un nuevo y prometedor condensador nanopartículas metal-aislante-metal que puede abrir el camino al desarrollo de una nueva tecnología de supercondensadores MIM

Reliability-aware circuit design to mitigate impact of device defects and variability in emerging memristor-based applications

In the last decades, semiconductor industry has fostered a fast downscale in technology, propelling the large scale integration of CMOS-based systems. The benefits in miniaturization are numerous, highlighting faster switching frequency, lower voltage supply and higher device density. However, this aggressive scaling trend it has not been without challenges, such as leakage currents, yield reduction or the increase in the overall system power dissipation. New materials, changes in the device structures and new architectures are key to keep the miniaturization trend. It is foreseen that 2D integration will eventually come to an insurmountable physical and economic limit, in which new strategic directions are required, such as the development of new device structures, 3D architectures or heterogeneous systems that takes advantage of the best of different technologies, both the ones already consolidated as well as emergent ones that provide performance and efficiency improvements in applications. In this context, memristor arises as one of several candidates in the race to find suitable emergent devices. Memristor, a blend of the words memory and resistor, is a passive device postulated by Leon Chua in 1971. In contrast with the other fundamental passive elements, memristors have the distinctive feature of modifying their resistance according to the charge that passes through these devices, and remaining unaltered when charge no longer flows. Although when it appeared no physical device implementation was acknowledged, HP Labs claimed in 2008 the manufacture of the first real memristor. This milestone triggered an unexpectedly high research activity about memristors, both in searching new materials and structures as well as in potential applications. Nowadays, memristors are not only appreciated in memory systems by their nonvolatile storage properties, but in many other fields, such as digital computing, signal processing circuits, or non-conventional applications like neuromorphic computing or chaotic circuits. In spite of their promising features, memristors show a primarily downside: they show significant device variation and limited lifetime due degradation compared with other alternatives. This Thesis explores the challenges that memristor variation and malfunction imposes in potential applications. The main goal is to propose circuits and strategies that either avoid reliability problems or take advantage of them. Throughout a collection of scenarios in which reliability issues are present, their impact is studied by means of simulations. This thesis is contextualized and their objectives are exposed in Chapter 1. In Chapter 2 the memristor is introduced, at both conceptual and experimental levels, and different compact levels are presented to be later used in simulations. Chapter 3 deepens in the phenomena that causes the lack of reliability in memristors, and models that include these defects in simulations are provided. The rest of the Thesis covers different applications. Therefore, Chapter 4 exhibits nonvolatile memory systems, and specifically an online test method for faulty cells. Digital computing is presented in Chapter 5, where a solution for the yield reduction in logic operations due to memristors variability is proposed. Lastly, Chapter 6 reviews applications in the analog domain, and it focuses in the exploitation of results observed in faulty memristor-based interconnect mediums for chaotic systems synchronization purposes. Finally, the Thesis concludes in Chapter 7 along with perspectives about future work.Este trabajo desarrolla un novedoso dispositivo condensador basado en el uso de la nanotecnología. El dispositivo parte del concepto existente de metal-aislador-metal (MIM), pero en lugar de una capa aislante continua, se utilizan nanopartículas dieléctricas. Las nanopartículas son principalmente de óxido de silicio (sílice) y poliestireno (PS) y los valores de diámetro son 255nm y 295nm respectivamente. Las nanopartículas contribuyen a una alta relación superficie/volumen y están fácilmente disponibles a bajo costo. La tecnología de depósito desarrollada en este trabajo se basa en la técnica de electrospray, que es una tecnología de fabricación ascendente (bottom-up) que permite el procesamiento por lotes y logra un buen compromiso entre una gran superficie y un bajo tiempo de depósito. Con el objetivo de aumentar la superficie de depósito, la configuración de electrospray ha sido ajustada para permitir áreas de depósito de 1cm2 a 25cm2. El dispositivo fabricado, los llamados condensadores de metal aislante de nanopartículas (NP-MIM) ofrecen valores de capacidad más altos que un condensador convencional similar con una capa aislante continua. En el caso de los NP-MIM de sílice, se alcanza un factor de hasta 1000 de mejora de la capacidad, mientras que los NP-MIM de poliestireno exhibe una ganancia de capacidad en el rango de 11. Además, los NP-MIM de sílice muestran comportamientos capacitivos en específicos rangos de frecuencias que depende de la humedad y el grosor de la capa de nanopartículas, mientras que los NP-MIM de poliestireno siempre mantienen su comportamiento capacitivo. Los dispositivos fabricados se han caracterizado mediante medidas de microscopía electrónica de barrido (SEM) complementadas con perforaciones de haz de iones focalizados (FIB) para caracterizar la topografía de los NP-MIMs. Los dispositivos también se han caracterizado por medidas de espectroscopia de impedancia, a diferentes temperaturas y humedades. El origen de la capacitancia aumentada está asociado en parte a la humedad en las interfaces de las nanopartículas. Se ha desarrollado un modelo de un circuito basado en elementos distribuidos para ajustar y predecir el comportamiento eléctrico de los NP-MIMs. En resumen, esta tesis muestra el diseño, fabricación, caracterización y modelización de un nuevo y prometedor condensador nanopartículas metal-aislante-metal que puede abrir el camino al desarrollo de una nueva tecnología de supercondensadores MIM.Postprint (published version

Reliability-aware circuit design to mitigate impact of device defects and variability in emerging memristor-based applications

In the last decades, semiconductor industry has fostered a fast downscale in technology, propelling the large scale integration of CMOS-based systems. The benefits in miniaturization are numerous, highlighting faster switching frequency, lower voltage supply and higher device density. However, this aggressive scaling trend it has not been without challenges, such as leakage currents, yield reduction or the increase in the overall system power dissipation. New materials, changes in the device structures and new architectures are key to keep the miniaturization trend. It is foreseen that 2D integration will eventually come to an insurmountable physical and economic limit, in which new strategic directions are required, such as the development of new device structures, 3D architectures or heterogeneous systems that takes advantage of the best of different technologies, both the ones already consolidated as well as emergent ones that provide performance and efficiency improvements in applications. In this context, memristor arises as one of several candidates in the race to find suitable emergent devices. Memristor, a blend of the words memory and resistor, is a passive device postulated by Leon Chua in 1971. In contrast with the other fundamental passive elements, memristors have the distinctive feature of modifying their resistance according to the charge that passes through these devices, and remaining unaltered when charge no longer flows. Although when it appeared no physical device implementation was acknowledged, HP Labs claimed in 2008 the manufacture of the first real memristor. This milestone triggered an unexpectedly high research activity about memristors, both in searching new materials and structures as well as in potential applications. Nowadays, memristors are not only appreciated in memory systems by their nonvolatile storage properties, but in many other fields, such as digital computing, signal processing circuits, or non-conventional applications like neuromorphic computing or chaotic circuits. In spite of their promising features, memristors show a primarily downside: they show significant device variation and limited lifetime due degradation compared with other alternatives. This Thesis explores the challenges that memristor variation and malfunction imposes in potential applications. The main goal is to propose circuits and strategies that either avoid reliability problems or take advantage of them. Throughout a collection of scenarios in which reliability issues are present, their impact is studied by means of simulations. This thesis is contextualized and their objectives are exposed in Chapter 1. In Chapter 2 the memristor is introduced, at both conceptual and experimental levels, and different compact levels are presented to be later used in simulations. Chapter 3 deepens in the phenomena that causes the lack of reliability in memristors, and models that include these defects in simulations are provided. The rest of the Thesis covers different applications. Therefore, Chapter 4 exhibits nonvolatile memory systems, and specifically an online test method for faulty cells. Digital computing is presented in Chapter 5, where a solution for the yield reduction in logic operations due to memristors variability is proposed. Lastly, Chapter 6 reviews applications in the analog domain, and it focuses in the exploitation of results observed in faulty memristor-based interconnect mediums for chaotic systems synchronization purposes. Finally, the Thesis concludes in Chapter 7 along with perspectives about future work.Este trabajo desarrolla un novedoso dispositivo condensador basado en el uso de la nanotecnología. El dispositivo parte del concepto existente de metal-aislador-metal (MIM), pero en lugar de una capa aislante continua, se utilizan nanopartículas dieléctricas. Las nanopartículas son principalmente de óxido de silicio (sílice) y poliestireno (PS) y los valores de diámetro son 255nm y 295nm respectivamente. Las nanopartículas contribuyen a una alta relación superficie/volumen y están fácilmente disponibles a bajo costo. La tecnología de depósito desarrollada en este trabajo se basa en la técnica de electrospray, que es una tecnología de fabricación ascendente (bottom-up) que permite el procesamiento por lotes y logra un buen compromiso entre una gran superficie y un bajo tiempo de depósito. Con el objetivo de aumentar la superficie de depósito, la configuración de electrospray ha sido ajustada para permitir áreas de depósito de 1cm2 a 25cm2. El dispositivo fabricado, los llamados condensadores de metal aislante de nanopartículas (NP-MIM) ofrecen valores de capacidad más altos que un condensador convencional similar con una capa aislante continua. En el caso de los NP-MIM de sílice, se alcanza un factor de hasta 1000 de mejora de la capacidad, mientras que los NP-MIM de poliestireno exhibe una ganancia de capacidad en el rango de 11. Además, los NP-MIM de sílice muestran comportamientos capacitivos en específicos rangos de frecuencias que depende de la humedad y el grosor de la capa de nanopartículas, mientras que los NP-MIM de poliestireno siempre mantienen su comportamiento capacitivo. Los dispositivos fabricados se han caracterizado mediante medidas de microscopía electrónica de barrido (SEM) complementadas con perforaciones de haz de iones focalizados (FIB) para caracterizar la topografía de los NP-MIMs. Los dispositivos también se han caracterizado por medidas de espectroscopia de impedancia, a diferentes temperaturas y humedades. El origen de la capacitancia aumentada está asociado en parte a la humedad en las interfaces de las nanopartículas. Se ha desarrollado un modelo de un circuito basado en elementos distribuidos para ajustar y predecir el comportamiento eléctrico de los NP-MIMs. En resumen, esta tesis muestra el diseño, fabricación, caracterización y modelización de un nuevo y prometedor condensador nanopartículas metal-aislante-metal que puede abrir el camino al desarrollo de una nueva tecnología de supercondensadores MIM