Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade

This paper focuses on the performance of analog readout electronics (built-in amplifier) integrated on the high-voltage (HV) CMOS silicon sensor chip, as well as its radiation hardness. Since the total collected charge from minimum ionizing particle (MIP) for the CMOS sensor is 10 times lower than for a conventional planar sensor, it is crucial to integrate a low noise built-in amplifier on the sensor chip to improve the signal to noise ratio of the system. As part of the investigation for the ATLAS strip detector upgrade, a test chip that comprises several pixel arrays with different geometries, as well as standalone built-in amplifiers and built-in amplifiers in pixel arrays has been fabricated in a 0.35 μm high-voltage CMOS process. Measurements of the gain and the noise of both the standalone amplifiers and built-in amplifiers in pixel arrays were performed before and after gamma radiation of up to 60 Mrad. Of special interest is the variation of the noise as a function of the sensor capacitance. We optimized the configuration of the amplifier for a fast rise time to adapt to the LHC bunch crossing period of 25 ns, and measured the timing characteristics including jitter. Our results indicate an adequate amplifier performance for monolithic structures used in HV-CMOS technology. The results have been incorporated in the next submission of a large-structure chip

Phase Locked Loop Test Methodology

Phase locked loops are incorporated into almost every large-scale mixed signal and digital system on chip (SOC). Various types of PLL architectures exist including fully analogue, fully digital, semi-digital, and software based. Currently the most commonly used PLL architecture for SOC environments and chipset applications is the Charge-Pump (CP) semi-digital type. This architecture is commonly used for clock synthesis applications, such as the supply of a high frequency on-chip clock, which is derived from a low frequency board level clock. In addition, CP-PLL architectures are now frequently used for demanding RF (Radio Frequency) synthesis, and data synchronization applications. On chip system blocks that rely on correct PLL operation may include third party IP cores, ADCs, DACs and user defined logic (UDL). Basically, any on-chip function that requires a stable clock will be reliant on correct PLL operation. As a direct consequence it is essential that the PLL function is reliably verified during both the design and debug phase and through production testing. This chapter focuses on test approaches related to embedded CP-PLLs used for the purpose of clock generation for SOC. However, methods discussed will generally apply to CP-PLLs used for other applications

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis

A monolithic ASIC demonstrator for the Thin Time-of-Flight PET scanner

Time-of-flight measurement is an important advancement in PET scanners to improve image reconstruction with a lower delivered radiation dose. This article describes the monolithic ASIC for the TT-PET project, a novel idea for a high-precision PET scanner for small animals. The chip uses a SiGe Bi-CMOS process for timing measurements, integrating a fully-depleted pixel matrix with a low-power BJT-based front-end per channel, integrated on the same 100 $\mu{} m$ thick die. The target timing resolution is 30 ps RMS for electrons from the conversion of 511 keV photons. A novel synchronization scheme using a patent-pending TDC is used to allow the synchronization of 1.6 million channels across almost 2000 different chips at picosecond-level. A full-featured demonstrator chip with a 3x10 matrix of 500x500 $\mu{} m^{2}$ pixels was produced to validate each block. Its design and experimental results are presented here

A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

EndoTOFPET-US a Novel Multimodal Tool for Endoscopy and Positron Emission Tomography

The EndoTOFPET-US project aims to jointly exploit Time-Of-Flight Positron Emission Tomography (TOFPET) and ultrasound endoscopy with a multi-modal instrument for the development of new biomarkers for pancreas and prostate oncology. The paper outlines the functionality of the proposed instrument and the challenges for its realization. The high level of miniaturization and integration poses strong demands to the fields of scintillating crystallography, ultra-fast photon detection, highly integrated electronics and system integration. Solutions are presented to obtain a coincidence time resolution better than 200 ps and a spatial resolution of ~1 mm with an asymmetric TOFPET detector. A tracking system with better than 1 mm spatial resolution precision enables the online alignment of the system. The detector design, the production and test status of the single detecto

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification