On detection of resistive bridging defects by low-temperature and low-voltage testing

International audienceTest application at reduced power supply voltage (low-voltage testing) or reduced temperature (low-temperature testing) can improve the defect coverage of a test set, particularly of resistive short defects. Using a probabilistic model of two-line nonfeedback short defects, we quantify the coverage impact of low-voltage and low-temperature testing for different voltages and temperatures. Effects of statistical process variations are not considered in the model. When quantifying the coverage increase, we differentiate between defects missed by the test set at nominal conditions and undetectable defects (flaws) detected at nonnominal conditions. In our analysis, the performance degradation of the device caused by lower power supply voltage is accounted for. Furthermore, we describe a situation in which defects detected by conventional testing are missed by low-voltage testing and quantify the resulting coverage loss. Experimental results suggest that test quality is improved even if no cost increase is allowed. If multiple test applications are acceptable, a combination of low voltage and low temperature turns out to provide the best coverage of both hard defects and flaws

On Detection of Resistive Bridging Defects by Low-Temperature and Low-Voltage Testing

Resistive defects are gaining importance in very-deepsubmicron technologies, but their detection conditions are not trivial. Test application can be performed under reduced temperature and/or voltage in order to improve detection of these defects. This is the first analytical study of resistive bridge defect coverage of CMOS ICs under low-temperature and mixed low-temperature, low-voltage conditions. We extend a resistive bridging fault model in order to account for temperature-induced changes in detection conditions. We account for changes in both the parameters of transistors involved in the bridge and the resistance of the short defect itself. Using a resistive bridging fault simulator, we determine fault coverage for low-temperature testing and compare it to the numbers obtained at nominal conditions. We also quantify the coverage of flaws, i.e. defects that are redundant at nominal conditions but could deteriorate and become earlylife failures. Finally, we compare our results to the case of low-voltage testing and comment on combination of these two techniques. Keywords: Temperature testing, Low-voltage testing, Resistive defects, Early-life failure