MODELING AND SPICE IMPLEMENTATION OF SILICON-ON-INSULATOR (SOI) FOUR GATE (G4FET) TRANSISTOR

As the device dimensions have reduced from micrometer to nanometer range, new bulk silicon devices are now facing many undesirable effects of scaling leading device engineers to look for new process technologies. Silicon-on-insulator (SOI) has emerged as a very promising candidate for resolving the major problems plaguing the bulk silicon technology. G4FET [G4FET] is a SOI transistor with four independent gates. Although G4FET has already shown great potential in different applications, the widespread adoption of a technology in circuit design is heavily dependent upon good SPICE (Simulation Program with Integrated Circuit Emphasis) models. CAD (Computer Aided Design) tools are now ubiquitous in circuit design and a fast, robust and accurate SPICE model is absolutely necessary to transform G4FET into a mainstream technology. The research goal is to develop suitable SPICE models for G4FET to aid circuit designers in designing innovative analog and digital circuits using this new transistor. The first phase of this work is numerical modeling of the G4FET where four different numerical techniques are implemented, each with its merits and demerits. The first two methods are based on multivariate Lagrange interpolation and multidimensional Bernstein polynomial. The third numerical technique is based on multivariate regression polynomial to aid modeling with dense gridded data. Another suitable alternative namely multidimensional linear and cubic spline interpolation is explored as the fourth numerical modeling approach to solve some of the problems resulting from single polynomial approximation. The next phase of modeling involves developing a macromodel combining already existing SPICE models of MOSFET (metal–oxide–semiconductor field-effect transistor) and JFET (junction-gate field-effect transistor). This model is easy to implement in circuit simulators and provides good results compared to already demonstrated experimental works with innovative G4FET circuits. The final phase of this work involves the development of a physics-based compact model of G4FET with some empirical fitting parameters. A model for depletion-all-around operation is implemented in circuit simulator based on previous work. Another simplified model, combining MOS and JFET action, is implemented in circuit simulator to model the accumulation mode operation of G4FET

Physics based modeling of multiple gate transistors on Silicon-on-Insulator (SOI)

G⁴FET is a novel device built on Silicon-on-Isulator (SOI). Due to the presence of Bulk-Si, it is impossible to have more than one gate for each transistor in conventional process technology. However, it is possible to have multiple gates for each transistor in SOI devices due to the presence of buried oxide, which can be used as an independent gate. Besides the oxide gates, junction gates can also be introduced. Due to the presence of the thin active layer, the junction gate can reach to the bottom and can be used to isolate and control the conduction in the transistors. As a result, the maximum number of gates that can be achieved in SOI is four. A transistor with four gates is called G⁴FET. G⁴FET offers all the features of SOI technology. It offers remedies of the drawbacks of Bulk-Si technology. The operation of the multiple gates has applications for mixed-signal circuits, quantum wire, and single transistor multiple gates logic schemes, etc. The research goal is to understand the device physics of G⁴FET. Understanding device physics will provide enough information to set device parameters to optimize device performances. The operation of semiconductor devices depends on several material parameters, device dimensions and structure. The objective of this research is to develop a model that includes material parameters, device dimensions and structure. The second objective of this research is to develop a numerical model from available data. The numerical model is useful for circuit simulation of G⁴FET, which provides information about the characteristics of G⁴FET, when used as a circuit element

Semiconductor Device Modeling and Simulation for Electronic Circuit Design

This chapter covers different methods of semiconductor device modeling for electronic circuit simulation. It presents a discussion on physics-based analytical modeling approach to predict device operation at specific conditions such as applied bias (e.g., voltages and currents); environment (e.g., temperature, noise); and physical characteristics (e.g., geometry, doping levels). However, formulation of device model involves trade-off between accuracy and computational speed and for most practical operation such as for SPICE-based circuit simulator, empirical modeling approach is often preferred. Thus, this chapter also covers empirical modeling approaches to predict device operation by implementing mathematically fitted equations. In addition, it includes numerical device modeling approaches, which involve numerical device simulation using different types of commercial computer-based tools. Numerical models are used as virtual environment for device optimization under different conditions and the results can be used to validate the simulation models for other operating conditions

Modeling Emerging Semiconductor Devices for Circuit Simulation

Circuit simulation is an indispensable part of modern IC design. The significant cost of fabrication has driven researchers to verify the chip functionality through simulation before submitting the design for final fabrication. With the impending end of Moore’s Law, researchers all over the world are looking for new devices with enhanced functionality. A plethora of promising emerging devices has been proposed in recent years. In order to leverage the full potential of such devices, circuit designers need fast, reliable models for SPICE simulation to explore different applications. Most of these new devices have complex underlying physical mechanism rendering the model development an extremely challenging task. For the models to be of practical use, they have to enable fast and accurate simulation that rules out the possibility of numerically solving a system of partial differential equations to arrive at a solution. In this chapter, we show how different modeling approaches can be used to simulate three emerging semiconductor devices namely, silicon- on- insulator four gate transistor(G4FET), perimeter gated single photon avalanche diode (PG-SPAD) and insulator-metal transistor (IMT) device with volatile memristance. All the models have been verified against experimental /TCAD data and implemented in commercial circuit simulator

Design of Discrete-time Chaos-Based Systems for Hardware Security Applications

Security of systems has become a major concern with the advent of technology. Researchers are proposing new security solutions every day in order to meet the area, power and performance specifications of the systems. The additional circuit required for security purposes can consume significant area and power. This work proposes a solution which utilizes discrete-time chaos-based logic gates to build a system which addresses multiple hardware security issues. The nonlinear dynamics of chaotic maps is leveraged to build a system that mitigates IC counterfeiting, IP piracy, overbuilding, disables hardware Trojan insertion and enables authentication of connecting devices (such as IoT and mobile). Chaos-based systems are also used to generate pseudo-random numbers for cryptographic applications.The chaotic map is the building block for the design of discrete-time chaos-based oscillator. The analog output of the oscillator is converted to digital value using a comparator in order to build logic gates. The logic gate is reconfigurable since different parameters in the circuit topology can be altered to implement multiple Boolean functions using the same system. The tuning parameters are control input, bifurcation parameter, iteration number and threshold voltage of the comparator. The proposed system is a hybrid between standard CMOS logic gates and reconfigurable chaos-based logic gates where original gates are replaced by chaos-based gates. The system works in two modes: logic locking and authentication. In logic locking mode, the goal is to ensure that the system achieves logic obfuscation in order to mitigate IC counterfeiting. The secret key for logic locking is made up of the tuning parameters of the chaotic oscillator. Each gate has 10-bit key which ensures that the key space is large which exponentially increases the computational complexity of any attack. In authentication mode, the aim of the system is to provide authentication of devices so that adversaries cannot connect to devices to learn confidential information. Chaos-based computing system is susceptible to process variation which can be leveraged to build a chaos-based PUF. The proposed system demonstrates near ideal PUF characteristics which means systems with large number of primary outputs can be used for authenticating devices

Modeling and Simulation in Engineering

The general aim of this book is to present selected chapters of the following types: chapters with more focus on modeling with some necessary simulation details and chapters with less focus on modeling but with more simulation details. This book contains eleven chapters divided into two sections: Modeling in Continuum Mechanics and Modeling in Electronics and Engineering. We hope our book entitled "Modeling and Simulation in Engineering - Selected Problems" will serve as a useful reference to students, scientists, and engineers