146 research outputs found

    Design of A Low Power Low Voltage CMOS Opamp

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    In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on bias current. The unique behaviour of the MOS transistors in subthreshold region not only allows a designer to work at low input bias current but also at low voltage. While operating the device at weak inversion results low power dissipation but dynamic range is degraded. Optimum balance between power dissipation and dynamic range results when the MOS transistors are operated at moderate inversion. Power is again minimised by the application of input dependant bias current using feedback loops in the input transistors of the differential pair with two current substractors. In comparison with the reported low power low voltage opamps at 0.8 micron technology, this opamp has very low standby power consumption with a high driving capability and operates at low voltage. The opamp is fairly small (0.0084 mm 2) and slew rate is more than other low power low voltage opamps reported at 0.8 um technology [1,2]. Vittoz at al [3] reported that slew rate can be improved by adaptive biasing technique and power dissipation can be reduced by operating the device in weak inversion. Though lower power dissipation is achieved the area required by the circuit is very large and speed is too small. So, operating the device in moderate inversion is a good solution. Also operating the device in subthreshold region not only allows lower power dissipation but also a lower voltage operation is achieved.Comment: 8 Pages, VLSICS Journa

    Performance enhancement in the desing of amplifier and amplifier-less circuits in modern CMOS technologies.

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    In the context of nowadays CMOS technology downscaling and the increasing demand of high performance electronics by industry and consumers, analog design has become a major challenge. On the one hand, beyond others, amplifiers have traditionally been a key cell for many analog systems whose overall performance strongly depends on those of the amplifier. Consequently, still today, achieving high performance amplifiers is essential. On the other hand, due to the increasing difficulty in achieving high performance amplifiers in downscaled modern technologies, a different research line that replaces the amplifier by other more easily achievable cells appears: the so called amplifier-less techniques. This thesis explores and contributes to both philosophies. Specifically, a lowvoltage differential input pair is proposed, with which three multistage amplifiers in the state of art are designed, analysed and tested. Moreover, a structure for the implementation of differential switched capacitor circuits, specially suitable for comparator-based circuits, that features lower distortion and less noise than the classical differential structures is proposed, an, as a proof of concept, implemented in a ΔΣ modulator

    Advanced analog layout design automation in compliance with density uniformity

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    To fabricate a reliable integrated circuit chip, foundries follow specific design rules and layout processing techniques. One of the parameters, which affect circuit performance and final electronic product quality, is the variation of thickness for each semiconductor layer within the fabricated chips. The thickness is closely dependent on the density of geometric features on that layer. Therefore, to ensure consistent thickness, foundries normally have to seriously control distribution of the feature density on each layer by using post-processing operations. In this research, the methods of controlling feature density distribution on different layers of an analog layout during the process of layout migration from an old technology to a new one or updated design specifications in the same technology have been investigated. We aim to achieve density-uniformity-aware layout retargeting for facilitating manufacturing process in the advanced technologies. This can offer an advantage right to the design stage for the designers to evaluate the effects of applying density uniformity to their drafted layouts, which are otherwise usually done by the foundries at the final manufacturing stage without considering circuit performance. Layout modification for density uniformity includes component position change and size modification, which may induce crosstalk noise caused by extra parasitic capacitance. To effectively control this effect, we have also investigated and proposed a simple yet accurate analytic method to model the parasitic capacitance on multi-layer VLSI chips. Supported by this capacitance modeling research, a unique methodology to deal with density-uniformity-aware analog layout retargeting with the capability of parasitic capacitance control has been presented. The proposed operations include layout geometry position rearrangement, interconnect size modification, and extra dummy fill insertion for enhancing layout density uniformity. All of these operations are holistically coordinated by a linear programming optimization scheme. The experimental results demonstrate the efficacy of the proposed methodology compared to the popular digital solutions in terms of minimum density variation and acute parasitic capacitance control

    Electrical Design for Manufacturability Solutions: Fast Systematic Variation Analysis and Design Enhancement Techniques

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    The primary objectives in this research are to develop computer-aided design (CAD) tools for Design for Manufacturability (DFM) solutions that enable designers to conduct more rapid and more accurate systematic variation analysis, with different design enhancement techniques. Four main CAD tools are developed throughout my thesis. The first CAD tool facilitates a quantitative study of the impact of systematic variations for different circuits' electrical and geometrical behavior. This is accomplished by automatically performing an extensive analysis of different process variations (lithography and stress) and their dependency on the design context. Such a tool helps to explore and evaluate the systematic variation impact on any type of design. Secondly, solutions in the industry focus on the "design and then fix philosophy", or "fix during design philosophy", whereas the next CAD tool involves the "fix before design philosophy". Here, the standard cell library is characterized in different design contexts, different resolution enhancement techniques, and different process conditions, generating a fully DFM-aware standard cell library using a newly developed methodology that dramatically reduce the required number of silicon simulations. Several experiments are conducted on 65nm and 45nm designs, and demonstrate more robust and manufacturable designs that can be implemented by using the DFM-aware standard cell library. Thirdly, a novel electrical-aware hotspot detection solution is developed by using a device parameter-based matching technique since the state-of-the-art hotspot detection solutions are all geometrical based. This CAD tool proposes a new philosophy by detecting yield limiters, also known as hotspots, through the model parameters of the device, presented in the SPICE netlist. This novel hotspot detection methodology is tested and delivers extraordinary fast and accurate results. Finally, the existing DFM solutions, mainly address the digital designs. Process variations play an increasingly important role in the success of analog circuits. Knowledge of the parameter variances and their contribution patterns is crucial for a successful design process. This information is valuable to find solutions for many problems in design, design automation, testing, and fault tolerance. The fourth CAD solution, proposed in this thesis, introduces a variability-aware DFM solution that detects, analyze, and automatically correct hotspots for analog circuits

    High-Performance Fpaa Design For Hierarchical Implementation Of Analog And Mixed-Signal Systems

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    The design complexity of today's IC has increased dramatically due to the high integration allowed by advanced CMOS VLSI process. A key to manage the increased design complexity while meeting the shortening time-to-market is design automation. In digital world, the field-programmable gate arrays (FPGAs) have evolved to play a very important role by providing ASIC-compatible design methodologies that include design-for-testability, design optimization and rapid prototyping. On the analog side, the drive towards shorter design cycles has demanded the development of high performance analog circuits that are configurable and suitable for CAD methodologies. Field-programmable analog arrays (FPAAs) are intended to achieve the benefits for analog system design as FPGAs have in the digital field. Despite of the obvious advantages of hierarchical analog design, namely short time-to-market and low non-recurring engineering (NRE) costs, this approach has some apparent disadvantages. The redundant devices and routing resources for programmability requires extra chip area, while switch and interconnect parasitics cause considerable performance degradation. To deliver a high-performance FPAA, effective methodologies must be developed to minimize those adversary effects. In this dissertation, three important aspects in the FPAA design are studied to achieve that goal: the programming technology, the configurable analog block (CAB) design and the routing architecture design. Enabled by the Laser MakelinkTM technology, which provides nearly ideal programmable switches, channel segmentation algorithms are developed to improve channel routability and reduce interconnect parasitics. Segmented routing are studied and performance metrics accounting for interconnect parasitics are proposed for performance-driven analog routing. For large scale arrays, buffer insertions are considered to further reduce interconnection delay and cross-coupling noise. A high-performance, highly flexible CAB is developed to realized both continuous-mode and switched-capacitor circuits. In the end, the implementation of an 8-bit, 50MSPS pipelined A/D converter using the proposed FPAA is presented as an example of the hierarchical analog design approach, with its key performance specifications discussed

    LOW POWER AND HIGH SIGNAL TO NOISE RATIO BIO-MEDICAL AFE DESIGN TECHNIQUES

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    The research work described in this thesis was focused on finding novel techniques to implement a low-power and noise Bio-Medical Analog Front End (BMEF) circuit technique to enable high-quality Electrocardiography (ECG) sensing. Usually, an ECG signal and several bio-medical signals are sensed from the human body through a pair of electrodes. The electrical characteristics of the very small amplitude (1u-10mV) signals are corrupted by random noise and have a significant dc offset. 50/60Hz power supply coupling noise is one of the biggest cross-talk signals compared to the thermally generated random noise. These signals are even AFE composed of an Instrumentation Amplifier (IA), which will have a better Common Mode rejection ratio (CMRR). The main function of the AFE is to convert the weak electrical Signal into large signals whose amplitude is large enough for an Analog Digital Converter (ADC) to detect without having any errors. A Variable Gain Amplifier (VGA) is sometimes required to adjust signal amplitude to maintain the dynamic range of the ADC. Also, the Bio-medical transceiver needs an accurate and temperature-independent reference voltage and current for the ADC, commonly known as Bandgap Reference Circuit (BGR). These circuits need to consume as low power as possible to enable these circuits to be powered from the battery. The work started with analysing the existing circuit techniques for the circuits mentioned above and finding the key important improvements required to reach the target specifications. Previously proposed IA is generated based on voltage mode signal processing. To improve the CMRR (119dB), we proposed a current mode-based IA with an embedded DC cancellation technique. State-of-the-art VGA circuits were built based on the degeneration principle of the differential pair, which will enable the variable gain purpose, but none of these techniques discussed linearity improvement, which is very important in modern CMOS technologies. This work enhances the total Harmonic distortion (THD) by 21dB in the worst case by exploiting the feedback techniques around the differential pair. Also, this work proposes a low power curvature compensated bandgap with 2ppm/0C temperature sensitivity while consuming 12.5uW power from a 1.2V dc power supply. All circuits were built in 45nm TSMC-CMOS technology and simulated with all the performance metrics with Cadence (spectre) simulator. The circuit layout was carried out to study post-layout parasitic effect sensitivity

    Towards Very Large Scale Analog (VLSA): Synthesizable Frequency Generation Circuits.

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    Driven by advancement in integrated circuit design and fabrication technologies, electronic systems have become ubiquitous. This has been enabled powerful digital design tools that continue to shrink the design cost, time-to-market, and the size of digital circuits. Similarly, the manufacturing cost has been constantly declining for the last four decades due to CMOS scaling. However, analog systems have struggled to keep up with the unprecedented scaling of digital circuits. Even today, the majority of the analog circuit blocks are custom designed, do not scale well, and require long design cycles. This thesis analyzes the factors responsible for the slow scaling of analog blocks, and presents a new design methodology that bridges the gap between traditional custom analog design and the modern digital design. The proposed methodology is utilized in implementation of the frequency generation circuits – traditionally considered analog systems. Prototypes covering two different applications were implemented. The first synthesized all-digital phase-locked loop was designed for 400-460 MHz MedRadio applications and was fabricated in a 65 nm CMOS process. The second prototype is an ultra-low power, near-threshold 187-500 kHz clock generator for energy harvesting/autonomous applications. Finally, a digitally-controlled oscillator frequency resolution enhancement technique is presented which allows reduction of quantization noise in ADPLLs without introducing spurs.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/109027/1/mufaisal_1.pd

    Anaconda: simulation-based synthesis of analog circuits via stochastic pattern search

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    Low phase noise 2 GHz Fractional-N CMOS synthesizer IC

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    Low noise low division 2 GHz RF synthesizer integrated circuits (ICs) are conventionally implemented in some form of HBT process such as SiGe or GaAs. The research in this dissertation differs from convention, with the aim of implementing a synthesizer IC in a more convenient, low-cost Si-based CMOS process. A collection of techniques to push towards the noise and frequency limits of CMOS processes, and possibly other IC processes, is then one of the research outcomes. In a synthesizer low N-divider ratios are important, as high division ratios would amplify in-band phase noise. The design methods deployed as part of this research achieve low division ratios (4 ≤ N ≤ 33) and a high phase comparison frequency (>100 MHz). The synthesizer IC employs a first-order fractional-N topology to achieve increased frequency tuning resolution. The primary N-divider was implemented utilising current mode logic (CML) and the fractional accumulator utilising conventional CMOS. Both a conventional CMOS phase frequency detector (PFD) and a CML PFD were implemented for benchmarking purposes. A custom-built 4.4 GHz synthesizer circuit employing the IC was used to validate the research. In the 4.4 GHz synthesizer circuit, the prototype IC achieved a measured in-band phase noise plateau of L( f ) = -113 dBc/Hz at a 100 kHz frequency offset, which equates to a figure of merit (FOM) of -225 dBc/Hz. The FOM compares well with existing, but expensive, SiGe and GaAs HBT processes. Total IC power dissipation was 710 mW, which is considerably less than commercially available GaAs designs. The complete synthesizer IC was implemented in Austriamicrosystems‟ (AMS) 0.35 μm CMOS process and occupies an area of 3.15 x 2.18 mm2.Dissertation (MEng)--University of Pretoria, 2010.Electrical, Electronic and Computer Engineeringunrestricte
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