Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry

Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential terahertz transmission, compatible with an increase in the density of trapped holes in the polymer channel. Taken in combination with scanning probe potentionmetry measurements, these results indicate that device degradation is largely a consequence of hole trapping, rather than of changes to the mobility of free holes in the polymer.Comment: 4 pages, 3 figure

Terahertz electrical writing speed in an antiferromagnetic memory

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band

Foreign Object Detection and Quantification of Fat Content Using A Novel Multiplexing Electric Field Sensor

There is an ever growing need to ensure the quality of food and assess specific quality parameters in all the links of the food chain, ranging from processing, distribution and retail to preparing food. Various imaging and sensing technologies, including X-ray imaging, ultrasound, and near infrared reflectance spectroscopy have been applied to the problem. Cost and other constraints restrict the application of some of these technologies. In this study we test a novel Multiplexing Electric Field Sensor (MEFS), an approach that allows for a completely non-invasive and non-destructive testing approach. Our experiments demonstrate the reliable detection of certain foreign objects and provide evidence that this sensor technology has the capability of measuring fat content in minced meat. Given the fact that this technology can already be deployed at very low cost, low maintenance and in various different form factors, we conclude that this type of MEFS is an extremely promising technology for addressing specific food quality issues

Simultaneous Noncontact Precision Imaging of Microstructural and Thickness Variation in Dielectric Materials Using Terahertz Energy

This article describes a noncontact single-sided terahertz electromagnetic measurement and imaging method that simultaneously characterizes microstructural (egs. spatially-lateral density) and thickness variation in dielectric (insulating) materials. The method was demonstrated for two materials-Space Shuttle External Tank sprayed-on foam insulation and a silicon nitride ceramic. It is believed that this method can be used as an inspection method for current and future NASA thermal protection system and other dielectric material inspection applications, where microstructural and thickness variation require precision mapping. Scale-up to more complex shapes such as cylindrical structures and structures with beveled regions would appear to be feasible

Terahertz-based system for dehydration analysis of hydrogel contact lenses

The use of terahertz-based techniques has grown very fast since they are capable of performingevaluations at molecular level, being very suitable for the analysis of biological samples and bioma-terials such as those for contact lenses. These biomaterials are continuously evolving to enhancethe lens wearer’s comfort by improving their hydration state and surface wettability. Therefore, thisstudy examines a novel terahertz system for the assessment of the temporary in vitro dehydrationof hydrogel contact lenses, which provides a new index to assess their state of hydration. Severalconventional and silicone hydrogel contact lenses and lens care solutions were analysed. Traditionalmethods such as the gravimetric determination of water content and the measurement of the staticcontact angle were also carried out for the validation of the developed system. The dehydrationrate measurements of contact lenses obtained with the proposed system correlated with the valuesprovided by traditional methods. As a whole, conventional hydrogel contact lenses exhibited thelowest values for dehydration rate. The tests conducted on various solutions showed a correlationbetween the wetting action of the solution and the dehydration rate of the contact lens material.Peer ReviewedPostprint (published version

Terahertz pulse imaging in archaeology

The work presented in this article was performed at the Oriental Institute at the University of Chicago, on objects from their permanent collection: an ancient Egyptian bird mummy and three ancient Sumerian corroded copper-alloy objects. We used a portable, fiber-coupled terahertz time-domain spectroscopic imaging system, which allowed us to measure specimens in both transmission and reflection geometry, and present time- and frequency-based image modes. The results confirm earlier evidence that terahertz imaging can provide complementary information to that obtainable from x-ray CT scans of mummies, giving better visualisation of low density regions. In addition, we demonstrate that terahertz imaging can distinguish mineralized layers in metal artifacts

Ultrafast spatiotemporal photocarrier dynamics near GaN surfaces studied by terahertz emission spectroscopy

Gallium nitride (GaN) is a promising wide-bandgap semiconductor, and new characterization tools are needed to study its local crystallinity, carrier dynamics, and doping effects. Terahertz (THz) emission spectroscopy (TES) is an emerging experimental technique that can probe the ultrafast carrier dynamics in optically excited semiconductors. In this work, the carrier dynamics and THz emission mechanisms of GaN were examined in unintentionally doped n-type, Si-doped n-type, and Mg-doped p-type GaN films. The photocarriers excited near the surface travel from the excited-area in an ultrafast manner and generate THz radiation in accordance with the time derivative of the surge drift current. The polarity of the THz amplitude can be used to determine the majority carrier type in GaN films through a non-contact and non-destructive method. Unique THz emission excited by photon energies less than the bandgap was also observed in the p-type GaN film