Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper

In this work, a novel metal-insulator-metal (MIM) capacitor process is introduced and integrated in a Copper Interconnect technology, whose smallest feature size is 0.18mum process, which has good yield, reliability and repeatability. The MIM uses a one-photomask process and hence is termed as the Low-cost-integration (LCI) MIM. The LCI MIM uses copper as the bottom electrode, plasma enhanced silicon nitride as the dielectric, and Tantalum nitride as the top electrode. The target capacitance density is 1.5fF/mum2. The target leakage current is 1e-7A/cm2 at 3.3V at 125°C. The maximum operating voltages that the MIM is designed for is 5V. The voltage linearity is desired to be less than 100ppm/v; The purpose of the study is to determine the feasibility of integrating the low-cost-integration (LCI) MIM capacitor and to characterize the device to ensure that it meets the above mentioned target values for the various parameters. This is done by electrically characterizing the capacitor for the capacitance change with voltage, the leakage current at accelerated voltages and the time-dependent-dielectric breakdown (TDDB) under various electric fields. (Abstract shortened by UMI.)

Micro/Nano Structures and Systems

Micro/Nano Structures and Systems: Analysis, Design, Manufacturing, and Reliability is a comprehensive guide that explores the various aspects of micro- and nanostructures and systems. From analysis and design to manufacturing and reliability, this reprint provides a thorough understanding of the latest methods and techniques used in the field. With an emphasis on modern computational and analytical methods and their integration with experimental techniques, this reprint is an invaluable resource for researchers and engineers working in the field of micro- and nanosystems, including micromachines, additive manufacturing at the microscale, micro/nano-electromechanical systems, and more. Written by leading experts in the field, this reprint offers a complete understanding of the physical and mechanical behavior of micro- and nanostructures, making it an essential reference for professionals in this field

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems

A Review on Mechanics and Mechanical Properties of 2D Materials - Graphene and Beyond

Since the first successful synthesis of graphene just over a decade ago, a variety of two-dimensional (2D) materials (e.g., transition metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered. Among the many unique and attractive properties of 2D materials, mechanical properties play important roles in manufacturing, integration and performance for their potential applications. Mechanics is indispensable in the study of mechanical properties, both experimentally and theoretically. The coupling between the mechanical and other physical properties (thermal, electronic, optical) is also of great interest in exploring novel applications, where mechanics has to be combined with condensed matter physics to establish a scalable theoretical framework. Moreover, mechanical interactions between 2D materials and various substrate materials are essential for integrated device applications of 2D materials, for which the mechanics of interfaces (adhesion and friction) has to be developed for the 2D materials. Here we review recent theoretical and experimental works related to mechanics and mechanical properties of 2D materials. While graphene is the most studied 2D material to date, we expect continual growth of interest in the mechanics of other 2D materials beyond graphene

하드웨어 기반 신경망을 위한 SiO2 핀 기반 AND-형 플래시 시냅스 어레이

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022. 8. 최우영.Neuromorphic computing systems have emerged as a novel artificial intelligence paradigm to overcome the von Neumann bottleneck by mimicking the biological nervous system. Synaptic devices for hardware-based neural networks (HNNs) in neuromorphic computing systems require parallel computability, high scalability, low-power operation, and selective write operation. In this work, a SiO2 fin-based AND flash memory synaptic device for a HNN is proposed. The proposed device having a round-shaped channel structure with a 6 nm-wide thin oxide fin improves program performance compared to a flash synaptic device with planar-type channel by locally enhancing electric fields. The AND flash cell shows a high on/off current ratio over 105, a low sup-pA off-current, and a high dynamic range of synaptic weights over 103 with a low program voltage below 9 V. Selective write operation is performed using program and erase inhibition pulse schemes in the fabricated AND array based on SiO2 fin, and weighted sum operation is experimentally verified. In addition, a 3D AND flash synaptic array with round-shaped poly-Si channel is designed and fabricated to improve scalability. Key fabrication steps are proposed to address misalignment issues. The proposed 3D AND array performs selective write operation using program and erase inhibition pulse schemes. A novel synaptic architecture with two AND flash memory cells for off-chip learning is proposed. The novel synapse structure based on AND flash cells is used to perform parallel XNOR operation and bit-counting for binary neural networks (BNNs). Proposed BNN based on the AND flash array structure exhibits a classification accuracy of 89.9% on CIFAR-10 dataset, comparable to that of an ideal software-based BNN. Furthermore, differential synaptic architecture using AND flash array is proposed to improve robustness against on-current retention loss.뉴로모픽 컴퓨팅 시스템은 생물학적 신경계를 모방하여 폰 노이만 병목 현상을 극복하는 새로운 인공 지능 패러다임으로 등장하였다. 뉴로모픽 컴퓨팅 시스템의 하드웨어 기반 신경망을 위한 시냅스 소자는 병렬 연산 가능성, 높은 집적도, 저전력 동작, 선택적인 쓰기 동작을 필요로 한다. 본 논문에서는, 하드웨어 기반 신경망을 위한 SiO2 핀 기반의 AND 플래시 메모리 어레이를 제안한다. 6 nm 폭의 얇은 산화물 핀 기반의 원형 채널 구조를 갖는 제안된 소자는 국부적으로 전계를 강화하여 평면형 채널 구조의 플래시 시냅스 소자 대비 프로그램 성능을 향상시킨다. AND 플래시 셀은 105 이상의 높은 온/오프 전류 비율, pA 미만의 오프 전류, 그리고 9 V 이하의 낮은 프로그래밍 전압을 사용하여 103 이상의 높은 시냅스 가중치의 동적 범위를 보인다. SiO2 핀을 기반으로 제작된 AND 어레이에서는 프로그램 및 이레이즈 억제 펄스 방식을 사용하여 선택적 쓰기 동작이 효율적으로 수행되고 가중치 합 동작이 실험적으로 검증된다. 또한, 집적도를 높이기 위해 원형 폴리실리콘 채널을 갖는 3D AND 플래시 시냅틱 어레이가 설계 및 제작된다. 오정렬 문제를 해결하기 위한 주요 공정 단계가 제안된다. 제안된 3차원 AND 어레이는 프로그램 및 이레이즈 억제 펄스 방식을 사용하여 선택적 쓰기 동작을 수행한다. 오프 칩 학습을 위해 두 개의 AND 플래시 메모리 셀을 기반으로 하는 새로운 시냅스 아키텍처를 제안한다. AND 플래시 셀 기반의 새로운 시냅스 구조는 이진 신경망을 위한 병렬 XNOR 연산과 비트-셈을 수행하도록 사용된다. AND 플래시 어레이 기반의 제안된 이진 신경망은 CIFAR-10 데이터에서 이상적인 소프트웨어 기반 이진신경망의 인식 정확도와 유사한 89.9%의 정확도를 보인다. 나아가 우리는 AND 플래시 어레이를 이용한 차동 시냅스 아키텍처을 제안하여 전류 유지 손실에 대한 안정성을 높인다.1. Introduction 1 1.1 Neuromorphic computing 1 1.2 Synaptic devices 3 1.3 Purpose of research 5 1.4 Dissertation outline 7 2. SiO2 fin-based AND flash synaptic array 8 2.1 Device structure 8 2.2 Fabrication process 10 2.3 Cell characteristics 16 2.4 Array characteristics 25 3. 3D AND flash synaptic array with rounded channel 34 3.1 Device structure 34 3.2 Fabrication process 37 3.2.1 Cell process steps 39 3.2.2 WL contact pad process steps 54 3.3 Cell characteristics 57 3.4 Array characteristics 62 4. Off-chip learning based on AND flash synaptic Array 72 4.1 Binary neural networks based on AND flash synaptic array 72 4.1.1 AND flash synaptic architecture 72 4.1.2 Differential synaptic architecture 80 4.2 Quantized neural networks based on AND flash synaptic array 84 5. Conclusion 86 Bibliography 89 Abstract in Korean 96박

Feature Papers in Electronic Materials Section

This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book

Deposição de filmes do diamante para dispositivos electrónicos

This PhD thesis presents details about the usage of diamond in electronics. It presents a review of the properties of diamond and the mechanisms of its growth using hot filament chemical vapour deposition (HFCVD). Presented in the thesis are the experimental details and discussions that follow from it about the optimization of the deposition technique and the growth of diamond on various electronically relevant substrates. The discussions present an analysis of the parameters typically involved in the HFCVD, particularly the pre-treatment that the substrates receive- namely, the novel nucleation procedure (NNP), as well as growth temperatures and plasma chemistry and how they affect the characteristics of the thus-grown films. Extensive morphological and spectroscopic analysis has been made in order to characterise these films.Este trabalho discute a utilização de diamante em aplicações electrónicas. É apresentada uma revisão detalhada das propriedades de diamante e dos respectivos mecanismos de crescimento utilizando deposição química a partir da fase vapor com filament quente (hot filament chemical vapour deposition - HFCVD). Os detalhes experimentais relativos à otimização desta técnica tendo em vista o crescimento de diamante em vários substratos com relevância em eletrónica são apresentados e discutidos com detalhe. A discussão inclui a análise dos parâmetros tipicamente envolvidos em HFCVD, em particular do pré-tratamento que o substrato recebe e que é conhecido na literatura como "novel nucleation procedure" (NNP), assim como das temperaturas de crescimento e da química do plasma, bem como a influência de todos estes parâmetros nas características finais dos filmes. A caracterização morfológica dos filmes envolveu técnicas de microscopia e espetroscopia.Programa Doutoral em Engenharia Eletrotécnic

Remanufacturing and Advanced Machining Processes for New Materials and Components

"Remanufacturing and Advanced Machining Processes for Materials and Components presents current and emerging techniques for machining of new materials and restoration of components, as well as surface engineering methods aimed at prolonging the life of industrial systems. It examines contemporary machining processes for new materials, methods of protection and restoration of components, and smart machining processes. • Details a variety of advanced machining processes, new materials joining techniques, and methods to increase machining accuracy • Presents innovative methods for protection and restoration of components primarily from the perspective of remanufacturing and protective surface engineering • Discusses smart machining processes, including computer-integrated manufacturing and rapid prototyping, and smart materials • Provides a comprehensive summary of state-of-the-art in every section and a description of manufacturing methods • Describes the applications in recovery and enhancing purposes and identifies contemporary trends in industrial practice, emphasizing resource savings and performance prolongation for components and engineering systems The book is aimed at a range of readers, including graduate-level students, researchers, and engineers in mechanical, materials, and manufacturing engineering, especially those focused on resource savings, renovation, and failure prevention of components in engineering systems.