Design automation algorithms for advanced lithography

In circuit manufacturing, as the technology nodes keep shrinking, conventional 193 nm immersion lithography (193i) has reached its printability limit. To continue the scaling with Moore's law, different kinds of advanced lithography have been proposed, such as multiple patterning lithography (MPL), extreme ultraviolet (EUV), electron beam lithography (EBL) and directed self-assembly (DSA). While these new technologies create enormous opportunities, they also pose great design challenges due to their unique process characteristics and stringent constraints. In order to smoothly adopt these advanced lithography technologies in integrated circuit (IC) fabrication, effective electronic design automation (EDA) algorithms must be designed and integrated into computer-aided design (CAD) tools to address the underlying design constraints and help the circuit designer to better facilitate the lithography process. In this thesis, we focus on algorithmic design and efficient implementation of EDA algorithm for advanced lithography, including directed self-assembly (DSA) and self-aligned double patterning (SADP), to conquer the physical challenges and improve the manufacturing yield. The first advanced lithography technology we explore is self-aligned double patterning (SADP). SADP has the significant advantage over traditional litho-etch-litho-etch (LELE) double patterning in its ability to eliminate overlay, making it a preferable DPL choice for the 14 nm technology node. As in any DPL technology, layout decomposition is the key problem. While the layout decomposition problem for LELE DPL has been well studied in the literature, only a few attempts have been made for the SADP layout decomposition problem. This thesis studies the SADP decomposition problem in different scenarios. SADP has been successfully deployed in 1D patterns and has several applications; however, applying it to 2D patterns turns out to be much more difficult. All previous exact algorithms were based on computationally expensive methods such as SAT or ILP. Other previous algorithms were heuristics without a guarantee that an overlay-free solution can be found even if one exists. The SADP decomposition problem on general 2D layout is proven to be NP-complete. However, we show that if we restrict the overlay, the problem is polynomial-time solvable, and present an exact algorithm to determine if a given 2D layout has a no-overlay SADP decomposition. When designing the layout decomposition algorithms, it is usually useful to take the layout structure into consideration. As most of the current IC layouts adopt a row-based standard cell design style, we can take advantage of its characteristics and design more efficient algorithms compared to the algorithms for general 2D patterns. In particular, the fixed widths of standard cells and power tracks on top and bottom of cells suggest that improvements can be made over the algorithms for general decomposition problem. We present a shortest-path based polynomial time SADP decomposition algorithm for row-based standard cell layout that efficiently finds decompositions with minimum overlay violations. Our proposed algorithm takes advantage of the fixed width of the cells and the alternating power tracks between the rows to limit the possible decompositions and thus achieve high efficiency. The next advanced lithography technology we discuss in the thesis is directed self-assembly (DSA). Block copolymer directed self-assembly (DSA) is a promising technique for patterning contact holes and vias in 7 nm technology nodes. To pattern contacts/vias with DSA, guiding templates are usually printed first with conventional lithography (193i) that has a coarser pitch resolution. Contact holes are then patterned with DSA process. The guiding templates play the role of defining the DSA patterns, which have a finer resolution than the templates. As a result, different patterns can be obtained through controlling the templates. It is shown that DSA lithography is very promising in patterning contacts/vias in 7 nm technology node. However, to utilize DSA for full-chip manufacturing, EDA for DSA must be fully explored because EDA is the key enabler for manufacturing, and the EDA research for DSA is still lagging behind. To pattern the contact layer with DSA, we must ensure that all the contacts in the layout require only feasible DSA templates. Nevertheless, the original layout may not be designed in a DSA-friendly way. However, even with an optimized library, infeasible templates may be introduced after the physical design phase. We propose a simulated-annealing (SA) based scheme to perform full-chip level contact layer optimization. According to the experimental results, the DSA conflicts in the contact layer are reduced by close to 90% on average after applying the proposed optimization algorithm. It is a current trend that industry is transiting from the random 2D designs to highly regular 1D gridded designs for sub-20 nm nodes and fabricating circuit designs with print-cut technology. In this process, the randomly distributed cuts may be too dense to be printed by single patterning lithography. DSA has proven its success in contact hole patterning, and can be easily expanded to cut printing for 1D gridded designs. Nevertheless, the irregular distribution of cuts still presents a great challenge for DSA, as the self-assembly process usually forms regular patterns. As a result, the cut layer must be optimized for the DSA process. To address the above problem, we propose an efficient algorithm to optimize cut layers without hurting the original circuit logic. Our work utilizes a technique called `line-end extension' to move the cuts and extend the functional wires without changing the original functionality of the circuit. Consequently, the cuts can be redistributed and grouped into valid DSA templates. Multiple patterning lithography has been widely adopted for today's circuit manufacturing. However, increasing the number of masks will make the manufacturing process more expensive. By incorporating DSA into the multiple patterning process, it is possible to reduce the number of masks and achieve a cost-effective solution. We study the decomposition problem for the contact layer in row-based standard cell layout with DSA-MP complementary lithography. We explore several heuristic-based approaches, and propose an algorithm that decomposes a standard cell row optimally in polynomial-time. Our experiments show that our algorithm is guaranteed to find a minimum cost solution if one exists, while the heuristic cannot or only finds a sub-optimal solution. Our results show that the DSA-MP complementary approach is very promising for the future advanced nodes. As in any lithography technique, the process variation control and proximity correction are the most important issues. As the DSA templates are patterned by conventional lithography, the patterned templates are prone to deviate from mask shapes due to process variations, which will ultimately affect the contacts after the DSA process even for the same type of template. Therefore, in order to enable the DSA technology in contact/via layer printing, it is extremely important to accurately model and detect hotspots, as well as estimate the contact pitch and locations during the verification phase. We propose a machine learning based design automation framework for DSA verification. A novel DSA model and a set of features are included. We implemented the proposed ML-based flow and performed extensive experiments on comparing the performances of learning algorithms and features. The experimental results show that our approach is much more efficient than the traditional approach, and can produce highly accurate results

III-V Nanowire MOSFET High-Frequency Technology Platform

This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. The layout providesan option to scale device dimensions for the purpose of designing varioushigh-frequency circuits. The nanowire MOSFET device is described using1D transport theory, and modeled with a compact virtual source model.Device assessment is performed at high frequencies, where sidewall spaceroverlaps have been identified and mitigated in subsequent design iterations.In the final stage of the design, the device is simulated with fT > 500 GHz,and fmax > 700 GHz.Alongside the III-V vertical nanowire device technology platform, adedicated and adopted RF and mm-wave back-end-of-line (BEOL) hasbeen developed. Investigation into the transmission line parameters revealsa line attenuation of 0.5 dB/mm at 50 GHz, corresponding to state-ofthe-art values in many mm-wave integrated circuit technologies. Severalkey passive components have been characterized and modeled. The deviceinterface module - an interconnect via stack, is one of the prominentcomponents. Additionally, the approach is used to integrate ferroelectricMOS capacitors, in a unique setting where their ferroelectric behavior iscaptured at RF and mm-wave frequencies.Finally, circuits have been designed. A proof-of-concept circuit, designedand fabricated with III-V lateral nanowire MOSFETs and mm-wave BEOL, validates the accuracy of the BEOL models, and the circuit design. Thedevice scaling is shown to be reflected into circuit performance, in aunique device characterization through an amplifier noise-matched inputstage. Furthermore, vertical-nanowire-MOSFET-based circuits have beendesigned with passive feedback components that resonate with the devicegate-drain capacitance. The concept enables for device unilateralizationand gain boosting. The designed low-noise amplifiers have matching pointsindependent on the MOSFET gate length, based on capacitance balancebetween the intrinsic and extrinsic capacitance contributions, in a verticalgeometry. The proposed technology platform offers flexibility in device andcircuit design and provides novel III-V vertical nanowire MOSFET devicesand circuits as a viable option to future wireless communication systems

Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Im Rahmen der vorliegenden Dissertation zum Thema „Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications“ wurde auf Basis einer 130 nm SiGe BiCMOS Technologie ein Through-Silicon Via (TSV) Technologiemodul zur Herstellung elektrischer Durchkontaktierungen für die Anwendung im Millimeterwellen und Sub-THz Frequenzbereich entwickelt. TSVs wurden mittels elektromagnetischer Simulationen modelliert und in Bezug auf ihre elektrischen Eigenschaften bis in den sub-THz Bereich bis zu 300 GHz optimiert. Es wurden die Wechselwirkungen zwischen Modellierung, Fertigungstechnologie und den elektrischen Eigenschaften untersucht. Besonderes Augenmerk wurde auf die technologischen Einflussfaktoren gelegt. Daraus schlussfolgernd wurde das TSV Technologiemodul entwickelt und in eine SiGe BiCMOS Technologie integriert. Hierzu wurde eine Via-Middle Integration gewählt, welche eine Freilegung der TSVs von der Wafer Rückseite erfordert. Durch die geringe Waferdicke von ca. 75 μm wird einen Carrier Wafer Handling Prozess verwendet. Dieser Prozess wurde unter der Randbedingung entwickelt, dass eine nachfolgende Bearbeitung der Wafer innerhalb der BiCMOS Pilotlinie erfolgen kann. Die Rückseitenbearbeitung zielt darauf ab, einen Redistribution Layer auf der Rückseite der BiCMOS Wafer zu realisieren. Hierzu wurde ein Prozess entwickelt, um gleichzeitig verschiedene TSV Strukturen mit variablen Geometrien zu realisieren und damit eine hohe TSV Design Flexibilität zu gewährleisten. Die TSV Strukturen wurden von DC bis über 300 GHz charakterisiert und die elektrischen Eigenschaften extrahiert. Dabei wurde gezeigt, dass TSV Verbindungen mit sehr geringer Dämpfung <1 dB bis 300 GHz realisierbar sind und somit ausgezeichnete Hochfrequenzeigenschaften aufweisen. Zuletzt wurden vielfältige Anwendungen wie das Grounding von Hochfrequenzschaltkreisen, Interposer mit Waveguides und 300 GHz Antennen dargestellt. Das Potential für Millimeterwellen Packaging und 3D Integration wurde evaluiert. TSV Technologien sind heutzutage in vielen Anwendungen z.B. im Bereich der Systemintegration von Digitalschaltkreisen und der Spannungsversorgung von integrierten Schaltkreisen etabliert. Im Rahmen dieser Arbeit wurde der Einsatz von TSVs für Millimeterwellen und dem sub-THz Frequenzbereich untersucht und die Anwendung für den sub-THz Bereich bis 300 GHz demonstriert. Dadurch werden neue Möglichkeiten der Systemintegration und des Packaging von Höchstfrequenzsystemen geschaffen.:Bibliographische Beschreibung List of symbols and abbreviations Acknowledgement 1. Introduction 2. FEM Modeling of BiCMOS & Interposer Through-Silicon Vias 3. Fabrication of BiCMOS & Silicon Interposer with TSVs 4. Characterization of BiCMOS Embedded Through-Silicon Vias 5. Applications 6. Conclusion and Future Work 7. Appendix 8. Publications & Patents 9. Bibliography 10. List of Figures and Table

Mitigation of glass weave skew using a combination of low DK spread glass, multi-ply dielectric and routing direction

As the data rates increase into the multi-gigabit range, the bit periods fall in the range of few tens of picoseconds. At above few Gbps, it becomes very important to reduce skew between differential pairs as it can adversely impact the signal eye and thereby increase bit error rate. The goal of this study is to mitigate the skew contributed by woven glass fabric of PCB dielectrics. The glass weave skew between differential pairs in a PCB occurs due to the difference in dielectric constants (DK) of glass and resin. This thesis aims to mitigate the skew by reducing the effective DK difference experienced by the traces of a differential pair. Several strategies like using low DK glass, spread glass styles with less gaps in the glass fabric, 1-ply and 2-ply dielectrics, routing the traces in warp and fill directions are studied through measurements taken on several test vehicles. Since the relative location of traces with respect to glass bundles cannot be controlled, it is highly unlikely to capture the worst case skew from measurements on few test vehicles. Full wave simulation model of laminate with fiber weave is employed. A systematic approach using measurements and simulations to mitigate the differential pair skew is presented --Abstract, page iii

X-ray Absorption Fine Structure and X-ray Excited Optical Luminescence Studies of One-dimensional Nanomaterials

One dimensional nanomaterials have attracted extensive attention in recent years due to their superior electrical, optical, mechanical and chemical properties compared to their bulk counterparts. In this thesis, electronic structure and optical properties of three types of nanomaterials are investigated using synchrotron based X-ray absorption spectroscopy: X-ray absorption fine structure (XAFS) and X-ray excited optical luminescence (XEOL). Si nanowire arrays are synthesized using electroless chemical etching, and coated with platinum and gold nanoparticles. The interaction between metal nanoparticles and the nanowire substrate is investigated using X-ray absorption near-edge structure (XANES). The luminescence properties of thermally oxidized Si nanostructures, such as Si nanowires, porous Si nanowires, and porous Si are comparatively studied. Using XEOL in combination with XANES, luminescence from defect centers in SiO2 and from Si/SiO2 interface can be distinguished. Electronic structure and luminescence of silicon carbide micro- and nanostructures of different crystal structures (polytypes) are investigated. Although hexagonal and cubic SiC have similar electronic structures locally, they exhibit different luminescence properties. It is found that all SiC samples have a same defect emission regardless of crystal size and structure. Additional luminescence bands are observed when oxide is present. Cubic SiC has two luminescence bands, originated from SiC and surface native SiO2, respectively. SiC nanowires also exhibit quantum confined band gap luminescence. As for boron nitride nanotubes, the presence of oxygen atoms in BN lattice alters the luminescence significantly by introducing a new defect center. The presence of oxygen impurities results in an intense signal revealed by XANES which is associated with B-O bonding, but no noticeable difference is seen in XANES at N site

Task-based Runtime Optimizations Towards High Performance Computing Applications

The last decades have witnessed a rapid improvement of computational capabilities in high-performance computing (HPC) platforms thanks to hardware technology scaling. HPC architectures benefit from mainstream advances on the hardware with many-core systems, deep hierarchical memory subsystem, non-uniform memory access, and an ever-increasing gap between computational power and memory bandwidth. This has necessitated continuous adaptations across the software stack to maintain high hardware utilization. In this HPC landscape of potentially million-way parallelism, task-based programming models associated with dynamic runtime systems are becoming more popular, which fosters developers’ productivity at extreme scale by abstracting the underlying hardware complexity. In this context, this dissertation highlights how a software bundle powered by a task-based programming model can address the heterogeneous workloads engendered by HPC applications., i.e., data redistribution, geospatial modeling and 3D unstructured mesh deformation here. Data redistribution aims to reshuffle data to optimize some objective for an algorithm, whose objective can be multi-dimensional, such as improving computational load balance or decreasing communication volume or cost, with the ultimate goal of increasing the efficiency and therefore reducing the time-to-solution for the algorithm. Geostatistical modeling, one of the prime motivating applications for exascale computing, is a technique for predicting desired quantities from geographically distributed data, based on statistical models and optimization of parameters. Meshing the deformable contour of moving 3D bodies is an expensive operation that can cause huge computational challenges in fluid-structure interaction (FSI) applications. Therefore, in this dissertation, Redistribute-PaRSEC, ExaGeoStat-PaRSEC and HiCMA-PaRSEC are proposed to efficiently tackle these HPC applications respectively at extreme scale, and they are evaluated on multiple HPC clusters, including AMD-based, Intel-based, Arm-based CPU systems and IBM-based multi-GPU system. This multidisciplinary work emphasizes the need for runtime systems to go beyond their primary responsibility of task scheduling on massively parallel hardware system for servicing the next-generation scientific applications

Advanced Filter Solutions for High-performance Millimetre and Submillimetre-wave Systems

This thesis is devoted to the investigation of advanced filter design solutions for high-performance millimetre and submillimetre-wave systems. Each of the proposed design solutions are enabled using waveguide-based technologies with the aim of advancing future generations of satellite communications, radar, and remote sensing. As trends for frequency allocations move to higher and higher frequency bands, engineers are faced with increasingly complex challenges such as the degradation of component performance, the inability to correctively tune the performance, or scenarios that all together make circuits infeasible. In light of these challenges, this work seeks to advance the current literature on filter design and proposes many unique design solutions for overcoming manufacturing and accuracy limitations, reducing the transmission losses, and reducing the overall design complexity. Each of the proposed filter solutions that are presented in this thesis are based on either a novel structural design or a novel technology. Each of the proposed designs are presented with functional prototypes as a means of verifying the theory. In the majority of cases, prototypes have been manufactured using high-precision computer numerical control (CNC) milling, and in several articles, exploratory activities with the use of alternative technologies such as stereolithography (SLA) 3D-printing and deep-reactive ion etching (DRIE) are presented. Prior to the presentation of the filter designs, an overview on the design and synthesis of millimetre-wave filters and diplexers is provided and serves as a foundation for the coupling matrix descriptions of symmetric and asymmetric resonator designs throughout this work

Thermal performance enhancement of packaging substrates with integrated vapor chamber

The first part of this research investigates the effects of copper structures, such as copper through-package-vias (TPVs), and copper traces in redistribution layer (RDL), on the thermal performance of glass interposers through numerical and experimental approaches. Numerical parametric study on 2.5D interposers shows that as more copper structures are incorporated in glass interposers, the performance of silicon and glass interposers becomes closer, showing 31% difference in thermal resistance, compared to 53% difference without any copper structures in both interposers. In the second part of this study, a thermal model of glass interposer mounted on the vapor chamber integrated PCB is developed using multi-scale modeling scheme. The comparison of thermal performance between silicon and glass interposers shows that integration of vapor chamber with PCB makes thermal performance of both interposers almost identical, overcoming the limitation posed by low thermal conductivity of glass. The third part of this thesis focuses on design, fabrication, and performance measurement of PCB integrated with vapor chamber. Copper micropillar wick structure is fabricated on PCB with electroplating process, and its wettability is enhanced by silica nanoparticle coating. Design of the wick for the vapor chamber is determined based on the capillary performance and permeability test results. Fabricated device with ultra-thin thickness (~800 µm) shows higher thermal performance than copper plated PCB with the same thickness. Finally, 3D computational fluid dynamics/heat transfer model of the vapor chamber is developed, and modeling result is compared with test result.Ph.D