A Construction Kit for Efficient Low Power Neural Network Accelerator Designs

Implementing embedded neural network processing at the edge requires efficient hardware acceleration that couples high computational performance with low power consumption. Driven by the rapid evolution of network architectures and their algorithmic features, accelerator designs are constantly updated and improved. To evaluate and compare hardware design choices, designers can refer to a myriad of accelerator implementations in the literature. Surveys provide an overview of these works but are often limited to system-level and benchmark-specific performance metrics, making it difficult to quantitatively compare the individual effect of each utilized optimization technique. This complicates the evaluation of optimizations for new accelerator designs, slowing-down the research progress. This work provides a survey of neural network accelerator optimization approaches that have been used in recent works and reports their individual effects on edge processing performance. It presents the list of optimizations and their quantitative effects as a construction kit, allowing to assess the design choices for each building block separately. Reported optimizations range from up to 10'000x memory savings to 33x energy reductions, providing chip designers an overview of design choices for implementing efficient low power neural network accelerators

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2 O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit

Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy

In this work, we investigate the resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks using in-situ transmission electron microscopy and X-ray energy dispersive spectroscopy. Conductance of the HfO2/Al2O3 stack changes gradually upon electrical stressing which is related to the formation of extended nanoscale physical defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. The results suggest two competing physical mechanisms including the redistribution of oxygen ions and the migration of Al species from the Al electrode during the switching process. While the HfO2/Al2O3 bilayered stack appears to be a good candidate for RRAM technology, the low diffusion barrier of the active Al electrode causes severe Al migration in the bi-layered oxides leading to the device to fail in resetting, and thereby, largely limiting the overall switching performance and material reliability

Circuit Design, Architecture and CAD for RRAM-based FPGAs

Field Programmable Gate Arrays (FPGAs) have been indispensable components of embedded systems and datacenter infrastructures. However, energy efficiency of FPGAs has become a hard barrier preventing their expansion to more application contexts, due to two physical limitations: (1) The massive usage of routing multiplexers causes delay and power overheads as compared to ASICs. To reduce their power consumption, FPGAs have to operate at low supply voltage but sacrifice performance because the transistors drive degrade when working voltage decreases. (2) Using volatile memory technology forces FPGAs to lose configurations when powered off and to be reconfigured at each power on. Resistive Random Access Memories (RRAMs) have strong potentials in overcoming the physical limitations of conventional FPGAs. First of all, RRAMs grant FPGAs non-volatility, enabling FPGAs to be "Normally powered off, Instantly powered on". Second, by combining functionality of memory and pass-gate logic in one unique device, RRAMs can greatly reduce area and delay of routing elements. Third, when RRAMs are embedded into datpaths, the performance of circuits can be independent from their working voltage, beyond the limitations of CMOS circuits. However, researches and development of RRAM-based FPGAs are in their infancy. Most of area and performance predictions were achieved without solid circuit-level simulations and sophisticated Computer Aided Design (CAD) tools, causing the predicted improvements to be less convincing. In this thesis,we present high-performance and low-power RRAM-based FPGAs fromtransistorlevel circuit designs to architecture-level optimizations and CAD tools, using theoretical analysis, industrial electrical simulators and novel CAD tools. We believe that this is the first systematic study in the field, covering: From a circuit design perspective, we propose efficient RRAM-based programming circuits and routing multiplexers through both theoretical analysis and electrical simulations. The proposed 4T(ransitor)1R(RAM) programming structure demonstrates significant improvements in programming current, when compared to most popular 2T1R programming structure. 4T1R-based routingmultiplexer designs are proposed by considering various physical design parasitics, such as intrinsic capacitance of RRAMs and wells doping organization. The proposed 4T1R-based multiplexers outperformbest CMOS implementations significantly in area, delay and power at both nominal and near-Vt regime. From a CAD perspective, we develop a generic FPGA architecture exploration tool, FPGASPICE, modeling a full FPGA fabric with SPICE and Verilog netlists. FPGA-SPICE provides different levels of testbenches and techniques to split large SPICE netlists, in order to obtain better trade-off between simulation time and accuracy. FPGA-SPICE can capture area and power characteristics of SRAM-based and RRAM-based FPGAs more accurately than the currently best analyticalmodels. From an architecture perspective, we propose architecture-level optimizations for RRAMbased FPGAs and quantify their minimumrequirements for RRAM devices. Compared to the best SRAM-based FPGAs, an optimized RRAM-based FPGA architecture brings significant reduction in area, delay and power respectively. In particular, RRAM-based FPGAs operating in the near-Vt regime demonstrate a 5x power improvement without delay overhead as compared to optimized SRAM-based FPGA operating at nominal working voltage

COMPUTE-IN-MEMORY WITH EMERGING NON-VOLATILE MEMORIES FOR ACCELERATING DEEP NEURAL NETWORKS

The objective of this research is to accelerate deep neural networks (DNNs) with emerging non-volatile memories (eNVMs) based compute-in-memory (CIM) architecture. The research first focuses on the inference acceleration and proposes a resistive random access memory (RRAM) based CIM architecture. Two generations of RRAM testchips which monolithically integrate the RRAM memory array and CMOS peripheral circuits are designed and fabricated using Winbond 90 nm and TSMC 40 nm commercial embedded RRAM process respectively. The first generation of testchip named XNOR-RRAM is dedicated for binary neural networks (BNNs) and the second generation named Flex-RRAM features 1bit-to-8bit run-time configurable precision and leverages the input sparsity of the DNN model to improve the throughput and energy efficiency. However, the non-ideal characteristics of eNVM devices, especially when utilized as multi-level analog synaptic weights, may incur a notable accuracy degradation for both training and inference. This research develops a PyTorch based framework that incorporates the device characteristics into the DNN model to evaluate the impact of the eNVM nonidealities on training/inference accuracy. The results suggest that it is challenging to directly use eNVMs for in-situ training and resistance drift remains as a critical challenge to maintain a high inference accuracy. Furthermore, to overcome the challenges posed by the asymmetric conductance tuning behavior of typical eNVMs, which is found to be the most critical nonideality that prevents the model from achieving software equivalent training accuracy, this research proposes a novel 2-transistor-1-FeFET (ferroelectric field effect transistor) based synaptic weight cell that exploits hybrid precision for in situ training and inference, which achieves near-software classification accuracy on MNIST and CIFAR-10 dataset.Ph.D

Heterogeneous Reconfigurable Fabrics for In-circuit Training and Evaluation of Neuromorphic Architectures

A heterogeneous device technology reconfigurable logic fabric is proposed which leverages the cooperating advantages of distinct magnetic random access memory (MRAM)-based look-up tables (LUTs) to realize sequential logic circuits, along with conventional SRAM-based LUTs to realize combinational logic paths. The resulting Hybrid Spin/Charge FPGA (HSC-FPGA) using magnetic tunnel junction (MTJ) devices within this topology demonstrates commensurate reductions in area and power consumption over fabrics having LUTs constructed with either individual technology alone. Herein, a hierarchical top-down design approach is used to develop the HSCFPGA starting from the configurable logic block (CLB) and slice structures down to LUT circuits and the corresponding device fabrication paradigms. This facilitates a novel architectural approach to reduce leakage energy, minimize communication occurrence and energy cost by eliminating unnecessary data transfer, and support auto-tuning for resilience. Furthermore, HSC-FPGA enables new advantages of technology co-design which trades off alternative mappings between emerging devices and transistors at runtime by allowing dynamic remapping to adaptively leverage the intrinsic computing features of each device technology. HSC-FPGA offers a platform for fine-grained Logic-In-Memory architectures and runtime adaptive hardware. An orthogonal dimension of fabric heterogeneity is also non-determinism enabled by either low-voltage CMOS or probabilistic emerging devices. It can be realized using probabilistic devices within a reconfigurable network to blend deterministic and probabilistic computational models. Herein, consider the probabilistic spin logic p-bit device as a fabric element comprising a crossbar-structured weighted array. The Programmability of the resistive network interconnecting p-bit devices can be achieved by modifying the resistive states of the array\u27s weighted connections. Thus, the programmable weighted array forms a CLB-scale macro co-processing element with bitstream programmability. This allows field programmability for a wide range of classification problems and recognition tasks to allow fluid mappings of probabilistic and deterministic computing approaches. In particular, a Deep Belief Network (DBN) is implemented in the field using recurrent layers of co-processing elements to form an n x m1 x m2 x ::: x mi weighted array as a configurable hardware circuit with an n-input layer followed by i ≥ 1 hidden layers. As neuromorphic architectures using post-CMOS devices increase in capability and network size, the utility and benefits of reconfigurable fabrics of neuromorphic modules can be anticipated to continue to accelerate

2022 roadmap on neuromorphic computing and engineering

Modern computation based on von Neumann architecture is now a mature cutting-edge science. In the von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 10$^{18}$ calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges for each research area. We hope that this roadmap will be a useful resource by providing a concise yet comprehensive introduction to readers outside this field, for those who are just entering the field, as well as providing future perspectives for those who are well established in the neuromorphic computing community