MoRS: An approximate fault modelling framework for reduced-voltage SRAMs

On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g, GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks (DNNs) running on these heterogeneous fabrics are highly dependent on the on-chip memory architecture for efficient acceleration. Hence, improving the energy-efficiency of such memories directly leads to an efficient system. One of the common methods to save energy is undervolting i.e., supply voltage underscaling below the nominal level. Such systems can be safely undervolted without incurring faults down to a certain voltage limit. This safe range is also called voltage guardband. However, reducing voltage below the guardband level without decreasing frequency causes timing-based faults. In this paper, we propose MoRS, a framework that generates the first approximate undervolting fault model using real faults extracted from experimental undervolting studies on SRAMs to build the model. We inject the faults generated by MoRS into the on-chip memory of the DNN accelerator to evaluate the resilience of the system under the test. MoRS has the advantage of simplicity without any need for high-time overhead experiments while being accurate enough in comparison to a fully randomly-generated fault injection approach. We evaluate our experiment in popular DNN workloads by mapping weights to SRAMs and measure the accuracy difference between the output of the MoRS and the real data. Our results show that the maximum difference between real fault data and the output fault model of MoRS is 6.21%, whereas the maximum difference between real data and random fault injection model is 23.2%. In terms of average proximity to the real data, the output of MoRS outperforms the random fault injection approach by 3.21x.This work is partially funded by Open Transprecision Computing (OPRECOM) project, Summer of Code 2020.Peer ReviewedPostprint (author's final draft

MoRS: An approximate fault modelling framework for reduced-voltage SRAMs

On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g, GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks (DNNs) running on these heterogeneous fabrics are highly dependent on the on-chip memory architecture for efficient acceleration. Hence, improving the energy-efficiency of such memories directly leads to an efficient system. One of the common methods to save energy is undervolting i.e., supply voltage underscaling below the nominal level. Such systems can be safely undervolted without incurring faults down to a certain voltage limit. This safe range is also called voltage guardband. However, reducing voltage below the guardband level without decreasing frequency causes timing-based faults. In this paper, we propose MoRS, a framework that generates the first approximate undervolting fault model using real faults extracted from experimental undervolting studies on SRAMs to build the model. We inject the faults generated by MoRS into the on-chip memory of the DNN accelerator to evaluate the resilience of the system under the test. MoRS has the advantage of simplicity without any need for high-time overhead experiments while being accurate enough in comparison to a fully randomly-generated fault injection approach. We evaluate our experiment in popular DNN workloads by mapping weights to SRAMs and measure the accuracy difference between the output of the MoRS and the real data. Our results show that the maximum difference between real fault data and the output fault model of MoRS is 6.21%, whereas the maximum difference between real data and random fault injection model is 23.2%. In terms of average proximity to the real data, the output of MoRS outperforms the random fault injection approach by 3.21x.This work is partially funded by Open Transprecision Computing (OPRECOM) project, Summer of Code 2020.Peer ReviewedPostprint (author's final draft

Design and Analysis of Robust Low Voltage Static Random Access Memories.

Static Random Access Memory (SRAM) is an indispensable part of most modern VLSI designs and dominates silicon area in many applications. In scaled technologies, maintaining high SRAM yield becomes more challenging since they are particularly vulnerable to process variations due to 1) the minimum sized devices used in SRAM bitcells and 2) the large array sizes. At the same time, low power design is a key focus throughout the semiconductor industry. Since low voltage operation is one of the most effective ways to reduce power consumption due to its quadratic relationship to energy savings, lowering the minimum operating voltage (Vmin) of SRAM has gained significant interest. This thesis presents four different approaches to design and analyze robust low voltage SRAM: SRAM analysis method improvement, SRAM bitcell development, SRAM peripheral optimization, and advance device selection. We first describe a novel yield estimation method for bit-interleaved voltage-scaled 8-T SRAMs. Instead of the traditional trade-off between write and read, the trade-off between write and half select disturb is analyzed. In addition, this analysis proposes a method to find an appropriate Write Word-Line (WWL) pulse width to maximize yield. Second, low leakage 10-T SRAM with speed compensation scheme is proposed. During sleep mode of a sensor application, SRAM retaining data cannot be shut down so it is important to minimize leakage in SRAM. This work adopts several leakage reduction techniques while compensating performance. Third, adaptive write architecture for low voltage 8-T SRAMs is proposed. By adaptively modulating WWL width and voltage level, it is possible to achieve low power consumption while maintaining high yield without excessive performance degradation. Finally, low power circuit design based on heterojunction tunneling transistors (HETTs) is discussed. HETTs have a steep subthreshold swing beneficial for low voltage operation. Device modeling and design of logic and SRAM are proposed.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91569/1/daeyeonk_1.pd

Design of Low-Voltage Digital Building Blocks and ADCs for Energy-Efficient Systems

Increasing number of energy-limited applications continue to drive the demand for designing systems with high energy efficiency. This tutorial covers the main building blocks of a system implementation including digital logic, embedded memories, and analog-to-digital converters and describes the challenges and solutions to designing these blocks for low-voltage operation

Penelope: The NBTI-aware processor

Transistors consist of lower number of atoms with every technology generation. Such atoms may be displaced due to the stress caused by high temperature, frequency and current, leading to failures. NBTI (negative bias temperature instability) is one of the most important sources of failure affecting transistors. NBTI degrades PMOS transistors whenever the voltage at the gate is negative (logic inputPeer ReviewedPostprint (published version

Exceeding Conservative Limits: A Consolidated Analysis on Modern Hardware Margins

Modern large-scale computing systems (data centers, supercomputers, cloud and edge setups and high-end cyber-physical systems) employ heterogeneous architectures that consist of multicore CPUs, general-purpose many-core GPUs, and programmable FPGAs. The effective utilization of these architectures poses several challenges, among which a primary one is power consumption. Voltage reduction is one of the most efficient methods to reduce power consumption of a chip. With the galloping adoption of hardware accelerators (i.e., GPUs and FPGAs) in large datacenters and other large-scale computing infrastructures, a comprehensive evaluation of the safe voltage reduction levels for each different chip can be employed for efficient reduction of the total power. We present a survey of recent studies in voltage margins reduction at the system level for modern CPUs, GPUs and FPGAs. The pessimistic voltage guardbands inserted by the silicon vendors can be exploited in all devices for significant power savings. On average, voltage reduction can reach 12% in multicore CPUs, 20% in manycore GPUs and 39% in FPGAs.Comment: Accepted for publication in IEEE Transactions on Device and Materials Reliabilit

Cross-Layer Resiliency Modeling and Optimization: A Device to Circuit Approach

The never ending demand for higher performance and lower power consumption pushes the VLSI industry to further scale the technology down. However, further downscaling of technology at nano-scale leads to major challenges. Reduced reliability is one of them, arising from multiple sources e.g. runtime variations, process variation, and transient errors. The objective of this thesis is to tackle unreliability with a cross layer approach from device up to circuit level

Comprehensive Evaluation of Supply Voltage Underscaling in FPGA on-Chip Memories

In this work, we evaluate aggressive undervolting, i.e., voltage scaling below the nominal level to reduce the energy consumption of Field Programmable Gate Arrays (FPGAs). Usually, voltage guardbands are added by chip vendors to ensure the worst-case process and environmental scenarios. Through experimenting on several FPGA architectures, we measure this voltage guardband to be on average 39% of the nominal level, which in turn, delivers more than an order of magnitude power savings. However, further undervolting below the voltage guardband may cause reliability issues as the result of the circuit delay increase, i.e., start to appear faults. We extensively characterize the behavior of these faults in terms of the rate, location, type, as well as sensitivity to environmental temperature, with a concentration of on-chip memories, or Block RAMs (BRAMs). Finally, we evaluate a typical FPGA-based Neural Network (NN) accelerator under low-voltage BRAM operations. In consequence, the substantial NN energy savings come with the cost of NN accuracy loss. To attain power savings without NN accuracy loss, we propose a novel technique that relies on the deterministic behavior of undervolting faults and can limit the accuracy loss to 0.1% without any timing-slack overhead.Peer ReviewedPostprint (author's final draft