'Institute of Electrical and Electronics Engineers (IEEE)'
Doi
Abstract
Transistors consist of lower number of atoms with every technology generation. Such atoms may be displaced due to the stress caused by high temperature, frequency and current, leading to failures. NBTI (negative bias temperature instability) is one of the most important sources of failure affecting transistors. NBTI degrades PMOS transistors whenever the voltage at the gate is negative (logic inputPeer ReviewedPostprint (published version
