13,592 research outputs found
An efficient approach to noise analysis through multidimensional physics-based models
IEEE TRANS. EL. DEV
Investigation of FACTS devices to improve power quality in distribution networks
Flexible AC transmission system (FACTS) technologies are power electronic solutions
that improve power transmission through enhanced power transfer volume and stability,
and resolve quality and reliability issues in distribution networks carrying sensitive
equipment and non-linear loads. The use of FACTS in distribution systems is still in
its infancy. Voltages and power ratings in distribution networks are at a level where
realistic FACTS devices can be deployed. Efficient power converters and therefore loss
minimisation are crucial prerequisites for deployment of FACTS devices.
This thesis investigates high power semiconductor device losses in detail. Analytical
closed form equations are developed for conduction loss in power devices as a function
of device ratings and operating conditions. These formulae have been shown to predict
losses very accurately, in line with manufacturer data. The developed formulae enable
circuit designers to quickly estimate circuit losses and determine the sensitivity of those
losses to device voltage and current ratings, and thus select the optimal semiconductor
device for a specific application.
It is shown that in the case of majority carrier devices (such as power MOSFETs), the
conduction power loss (at rated current) increases linearly in relation to the varying rated
current (at constant blocking voltage), but is a square root of the variable blocking voltage
when rated current is fixed. For minority carrier devices (such as a pin diode or IGBT),
a similar relationship is observed for varying current, however where the blocking voltage
is altered, power losses are derived as a square root with an offset (from the origin).
Finally, this thesis conducts a power loss-oriented evaluation of cascade type multilevel
converters suited to reactive power compensation in 11kV and 33kV systems. The cascade
cell converter is constructed from a series arrangement of cell modules. Two prospective
structures of cascade type converters were compared as a case study: the traditional type
which uses equal-sized cells in its chain, and a second with a ternary relationship between
its dc-link voltages. Modelling (at 81 and 27 levels) was carried out under steady state
conditions, with simplified models based on the switching function and using standard
circuit simulators. A detailed survey of non punch through (NPT) and punch through
(PT) IGBTs was completed for the purpose of designing the two cascaded converters.
Results show that conduction losses are dominant in both types of converters in NPT
and PT IGBTs for 11kV and 33kV systems. The equal-sized converter is only likely to
be useful in one case (27-levels in the 33kV system). The ternary-sequence converter
produces lower losses in all other cases, and this is especially noticeable for the 81-level
converter operating in an 11kV network
Transient electrothermal simulation of power semiconductor devices
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature
Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models
The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models. The proposed technique exploits efficient intermediate mathematical models to perform the link between physics-based analysis and circuit-oriented simulations, and only requires the evaluation of dc and ac small-signal (dc charge) sensitivities under general quasi-static conditions. To illustrate the technique, the authors discuss examples of sensitivity evaluation, statistical analysis, and doping profile optimization of an implanted MESFET to minimize intermodulation which makes use of LS parametric sensitivities under two-tone excitatio
Method and apparatus for increasing resistance of bipolar buried layer integrated circuit devices to single-event upsets
Bipolar transistors fabricated in separate buried layers of an integrated circuit chip are electrically isolated with a built-in potential barrier established by doping the buried layer with a polarity opposite doping in the chip substrate. To increase the resistance of the bipolar transistors to single-event upsets due to ionized particle radiation, the substrate is biased relative to the buried layer with an external bias voltage selected to offset the built-in potential just enough (typically between about +0.1 to +0.2 volt) to prevent an accumulation of charge in the buried-layer-substrate junction
When self-consistency makes a difference
Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits. The slow thermal dynamics and the thermal nonlinearity should be accurately included in the model; otherwise, some response features subtly related to the detailed frequency behavior of the slow thermal dynamics would be inaccurately reproduced or completely distorted. In this contribution we show two examples, concerning current collapse in HBTs and modeling of IMPs in GaN HEMTs. Accurate thermal modeling is proved to be be made compatible with circuit-oriented CAD tools through a proper choice of system-level approximations; in the discussion we exploit a Wiener approach, but of course the strategy should be tailored to the specific problem under consideratio
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