592 research outputs found

    Low-power emerging memristive designs towards secure hardware systems for applications in internet of things

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    Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and in-memory computing (IMC), but there is a rising interest in using memristive technologies for security applications in the era of internet of things (IoT). In this review article, for achieving secure hardware systems in IoT, low-power design techniques based on emerging memristive technology for hardware security primitives/systems are presented. By reviewing the state-of-the-art in three highlighted memristive application areas, i.e. memristive non-volatile memory, memristive reconfigurable logic computing and memristive artificial intelligent computing, their application-level impacts on the novel implementations of secret key generation, crypto functions and machine learning attacks are explored, respectively. For the low-power security applications in IoT, it is essential to understand how to best realize cryptographic circuitry using memristive circuitries, and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their security. This review article aims to help researchers to explore security solutions, to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs

    Increasing pattern recognition accuracy for chemical sensing by evolutionary based drift compensation

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    Artificial olfaction systems, which mimic human olfaction by using arrays of gas chemical sensors combined with pattern recognition methods, represent a potentially low-cost tool in many areas of industry such as perfumery, food and drink production, clinical diagnosis, health and safety, environmental monitoring and process control. However, successful applications of these systems are still largely limited to specialized laboratories. Sensor drift, i.e., the lack of a sensor's stability over time, still limits real in dustrial setups. This paper presents and discusses an evolutionary based adaptive drift-correction method designed to work with state-of-the-art classification systems. The proposed approach exploits a cutting-edge evolutionary strategy to iteratively tweak the coefficients of a linear transformation which can transparently correct raw sensors' measures thus mitigating the negative effects of the drift. The method learns the optimal correction strategy without the use of models or other hypotheses on the behavior of the physical chemical sensors

    Applications of memristors in conventional analogue electronics

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    This dissertation presents the steps employed to activate and utilise analogue memristive devices in conventional analogue circuits and beyond. TiO2 memristors are mainly utilised in this study, and their large variability in operation in between similar devices is identified. A specialised memristor characterisation instrument is designed and built to mitigate this issue and to allow access to large numbers of devices at a time. Its performance is quantified against linear resistors, crossbars of linear resistors, stand-alone memristive elements and crossbars of memristors. This platform allows for a wide range of different pulsing algorithms to be applied on individual devices, or on crossbars of memristive elements, and is used throughout this dissertation. Different ways of achieving analogue resistive switching from any device state are presented. Results of these are used to devise a state-of-art biasing parameter finder which automatically extracts pulsing parameters that induce repeatable analogue resistive switching. IV measurements taken during analogue resistive switching are then utilised to model the internal atomic structure of two devices, via fittings by the Simmons tunnelling barrier model. These reveal that voltage pulses modulate a nano-tunnelling gap along a conical shape. Further retention measurements are performed which reveal that under certain conditions, TiO2 memristors become volatile at short time scales. This volatile behaviour is then implemented into a novel SPICE volatile memristor model. These characterisation methods of solid-state devices allowed for inclusion of TiO2 memristors in practical electronic circuits. Firstly, in the context of large analogue resistive crossbars, a crosspoint reading method is analysed and improved via a 3-step technique. Its scaling performance is then quantified via SPICE simulations. Next, the observed volatile dynamics of memristors are exploited in two separate sequence detectors, with applications in neuromorphic engineering. Finally, the memristor as a programmable resistive weight is exploited to synthesise a memristive programmable gain amplifier and a practical memristive automatic gain control circuit.Open Acces

    Advanced CMOS Integrated Circuit Design and Application

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    The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems

    21st Century Nanostructured Materials

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    Nanostructured materials (NMs) are attracting interest as low-dimensional materials in the high-tech era of the 21st century. Recently, nanomaterials have experienced breakthroughs in synthesis and industrial and biomedical applications. This book presents recent achievements related to NMs such as graphene, carbon nanotubes, plasmonic materials, metal nanowires, metal oxides, nanoparticles, metamaterials, nanofibers, and nanocomposites, along with their physical and chemical aspects. Additionally, the book discusses the potential uses of these nanomaterials in photodetectors, transistors, quantum technology, chemical sensors, energy storage, silk fibroin, composites, drug delivery, tissue engineering, and sustainable agriculture and environmental applications

    2022 roadmap on neuromorphic computing and engineering

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    Modern computation based on von Neumann architecture is now a mature cutting-edge science. In the von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018^{18} calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges for each research area. We hope that this roadmap will be a useful resource by providing a concise yet comprehensive introduction to readers outside this field, for those who are just entering the field, as well as providing future perspectives for those who are well established in the neuromorphic computing community

    AND-ํ˜• ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ์–ด๋ ˆ์ด๋ฅผ ํ™œ์šฉํ•œ ํ•˜๋“œ์›จ์–ด ๊ธฐ๋ฐ˜ ์ŠคํŒŒ์ดํ‚น ๋‰ด๋Ÿด ๋„คํŠธ์›Œํฌ ๊ตฌํ˜„

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    ํ•™์œ„๋…ผ๋ฌธ(๋ฐ•์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ „๊ธฐยท์ •๋ณด๊ณตํ•™๋ถ€, 2022.2. ์ด์ข…ํ˜ธ.Neuromorphic engineering aims to implement a brain-inspired computing architecture as an alternative paradigm to the von Neumann processor. In this work, hardware-based neural networks that enable on-chip training using a thin-film transistor-type AND flash memory array architecture are designed. The synaptic device constituting the array is characterized by a doped p-type body, a gate insulator stack composed of SiO2 / Si3N4 / Al2O3, and a partially curved poly-Si channel. The p-body reduces the circuit burden on the high voltage driver required for both the source and drain lines when changing the synaptic weights. The high-ฮบ material included in the gate insulator stack helps to lower the operating voltage of the device. As the device scales down, the structural characteristics of the device have the potential to increase the efficiency of the memory operation and the immunity to the voltage drop effect that occurs in the bit-lines of the array. In the AND array architecture using fabricated synaptic devices, a pulse scheme for selective memory operation is proposed and verified experimentally. Based on the measured characteristics of the fabricated synaptic devices and arrays, we design two types of hardware-based spiking neural networks (SNNs) according to the learning purpose. First, we propose a hardware-based SNN for unsupervised learning with spiking-timing-dependent plasticity (STDP) learning rule. The designed network does not use the pulses generated by the external circuitry, but the necessary pulses are generated in each spike neuron circuit. In this architecture, the STDP rule is implemented by the effective pulse scheme for using poly-silicon AND arrays. With the proposed pulse scheme and SNN, 91.63% of recognition accuracy is obtained in MNIST handwritten digit pattern learning using 200 output neurons. Second, we propose a hardware-based SNN for supervised learning with a direct feedback alignment (DFA) learning rule. Due to the DFA algorithm, which does not need to have the same synaptic weight in the forward path and backward path, the AND array architecture can be utilized in designing an efficient on-chip training neural network. Pulse schemes suitable for the proposed AND array architecture are also devised to implement the DFA algorithm in neural networks. In the system-level simulation, the recognition accuracy of up to 97.01% is obtained in the MNIST pattern learning task based on the proposed pulse scheme and computing architecture. In addition, we propose and verify the integration fabrication method of the proposed synaptic array and complementary metal-oxide-semiconductor (CMOS) circuits. Here, the CMOS circuits include either an integrate-and-fire circuit or a circuit that can change the width or amplitude of the spike signal. The proposed integration fabrication method has the advantage of reducing the number of masks and steps due to the shared process of the synaptic array and CMOS circuit. The proposed integration fabrication method is significant because it presents a methodology for efficient implantation of hardware-based neural networks as well as verification of excellent compatibility of the proposed synaptic device with CMOS.๋‰ด๋กœ๋ชจํ”ฝ ๊ธฐ์ˆ ์€ ํฐ ๋…ธ์ด๋งŒ ํ”„๋กœ์„ธ์„œ์˜ ๋Œ€์•ˆ์œผ๋กœ์„œ ๋‘๋‡Œ์—์„œ ์˜๊ฐ์„ ๋ฐ›์€ ์ปดํ“จํŒ… ์•„ํ‚คํ…์ฒ˜๋ฅผ ๊ตฌํ˜„ํ•˜๋Š” ๊ฒƒ์„ ๋ชฉํ‘œ๋กœ ํ•œ๋‹ค. ์ด ๋…ผ๋ฌธ์—์„œ๋Š” ๋ฐ•๋ง‰ ํŠธ๋žœ์ง€์Šคํ„ฐํ˜• ๋ฐ ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ์–ด๋ ˆ์ด ์•„ํ‚คํ…์ฒ˜๋ฅผ ์‚ฌ์šฉํ•˜์—ฌ ์˜จ์นฉ ํ›ˆ๋ จ์„ ๊ฐ€๋Šฅํ•˜๊ฒŒ ํ•˜๋Š” ํ•˜๋“œ์›จ์–ด ๊ธฐ๋ฐ˜ ์‹ ๊ฒฝ๋ง์„ ์„ค๊ณ„ํ•œ๋‹ค. ์–ด๋ ˆ์ด๋ฅผ ๊ตฌ์„ฑํ•˜๋Š” ์‹œ๋ƒ…์Šค ์†Œ์ž๋Š” ๋„ํ•‘๋œ pํ˜• ๋ฐ”๋””, SiO2 / Si3N4 / Al2O3๋กœ ๊ตฌ์„ฑ๋œ ๊ฒŒ์ดํŠธ ์ ˆ์—ฐ๋ง‰ ์Šคํƒ ๋ฐ ๋ถ€๋ถ„์ ์œผ๋กœ ๊ตฌ๋ถ€๋Ÿฌ์ง„ ํด๋ฆฌ์‹ค๋ฆฌ์ฝ˜ ์ฑ„๋„์„ ํŠน์ง•์œผ๋กœ ํ•œ๋‹ค. ์‹œ๋ƒ…์Šค ์†Œ์ž ๊ตฌ์กฐ์— ํฌํ•จ๋œ ๋ฐ”๋”” ์˜์—ญ์€ ์‹œ๋ƒ…์Šค ๊ฐ€์ค‘์น˜๋ฅผ ๋ณ€๊ฒฝํ•  ๋•Œ ์†Œ์Šค ๋ฐ ๋“œ๋ ˆ์ธ ๋ผ์ธ ๋ชจ๋‘์— ํ•„์š”ํ•œ ๊ณ ์ „์•• ๋“œ๋ผ์ด๋ฒ„์˜ ํšŒ๋กœ ๋ถ€๋‹ด์„ ์ค„์ผ ์ˆ˜ ์žˆ๋‹ค. ๋˜ํ•œ ๊ฒŒ์ดํŠธ ์ ˆ์—ฐ๋ง‰ ์Šคํƒ์— ํฌํ•จ๋œ high- ฮบ ๋ฌผ์งˆ์€ ์‹œ๋ƒ…์Šค ์†Œ์ž์˜ ๋™์ž‘ ์ „์••์„ ๋‚ฎ์ถœ ์ˆ˜ ์žˆ๋‹ค. ์‹œ๋ƒ…์Šค ์†Œ์ž์˜ ํฌ๊ธฐ๊ฐ€ ์ถ•์†Œ๋จ์— ๋”ฐ๋ผ ์†Œ์ž์˜ ๊ตฌ์กฐ์ ์ธ ํŠน์ง•์€ ๋ฉ”๋ชจ๋ฆฌ ๋™์ž‘์˜ ํšจ์œจ์„ฑ ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ์–ด๋ ˆ์ด์˜ ๋น„ํŠธ ๋ผ์ธ์—์„œ ๋ฐœ์ƒํ•˜๋Š” ์ „์•• ๊ฐ•ํ•˜ ํšจ๊ณผ์— ๋Œ€ํ•œ ๋‚ด์„ฑ์„ ์ฆ๊ฐ€์‹œํ‚จ๋‹ค. ์šฐ๋ฆฌ๋Š” ์ œ์ž‘๋œ ์‹œ๋ƒ…์Šค ์†Œ์ž๋ฅผ ์ด์šฉํ•œ ANDํ˜• ์–ด๋ ˆ์ด ๊ตฌ์กฐ์—์„œ ์„ ํƒ์ ์ธ ๋ฉ”๋ชจ๋ฆฌ ๋™์ž‘์„ ์œ„ํ•œ ํŽ„์Šค ๋ฐฉ์‹์„ ์ œ์•ˆํ•˜๊ณ  ์‹คํ—˜์ ์œผ๋กœ ๊ฒ€์ฆํ•œ๋‹ค. ์ดํ›„ ์ œ์ž‘๋œ ์‹œ๋ƒ…์Šค ์†Œ์ž ๋ฐ ์–ด๋ ˆ์ด์˜ ์ธก์ •๋œ ํŠน์„ฑ์„ ๊ธฐ๋ฐ˜์œผ๋กœ ํ•™์Šต ๋ชฉ์ ์— ๋”ฐ๋ผ 2๊ฐ€์ง€ ์œ ํ˜•์˜ ํ•˜๋“œ์›จ์–ด ๊ธฐ๋ฐ˜ ์ŠคํŒŒ์ดํฌ ์‹ ๊ฒฝ๋ง (SNN)์„ ์„ค๊ณ„ํ•œ๋‹ค. ๋จผ์ € ์ŠคํŒŒ์ดํฌ ์‹œ์  ์˜์กด ๊ฐ€์†Œ์„ฑ ๊ธฐ๋ฐ˜ ํ•™์Šต ๊ทœ์น™์„ ์ด์šฉํ•˜์—ฌ ๋น„์ง€๋„ ํ•™์Šต์„ ์œ„ํ•œ ํ•˜๋“œ์›จ์–ด ๊ธฐ๋ฐ˜ SNN์„ ์ œ์•ˆํ•œ๋‹ค. ์„ค๊ณ„๋œ ๋„คํŠธ์›Œํฌ๋Š” ์™ธ๋ถ€ ํšŒ๋กœ์—์„œ ํŽ„์Šค๋ฅผ ์ƒ์„ฑํ•˜์ง€ ์•Š์œผ๋ฉฐ ๊ฐ ์ŠคํŒŒ์ดํฌ ๋‰ด๋Ÿฐ ํšŒ๋กœ์—์„œ ํ•„์š”ํ•œ ํŽ„์Šค๋“ค์ด ์ƒ์„ฑ๋œ๋‹ค. ์ด๋Ÿฌํ•œ ๋„คํŠธ์›Œํฌ์—์„œ ์ŠคํŒŒ์ดํฌ ์‹œ์  ์˜์กด ๊ฐ€์†Œ์„ฑ ๊ธฐ๋ฐ˜ ํ•™์Šต ๊ทœ์น™์€ ํด๋ฆฌ์‹ค๋ฆฌ์ฝ˜ ANDํ˜• ์–ด๋ ˆ์ด๋ฅผ ์‚ฌ์šฉํ•˜๊ธฐ ์œ„ํ•œ ํšจ๊ณผ์ ์ธ ํŽ„์Šค ๊ตฌ๋™ ๋ฐฉ์‹์„ ํ†ตํ•ด ๊ตฌํ˜„๋œ๋‹ค. ์ œ์•ˆ๋œ ํŽ„์Šค ๊ตฌ๋™ ๋ฐฉ์‹๊ณผ SNN์„ ๊ธฐ๋ฐ˜์œผ๋กœ 200๊ฐœ์˜ ์ถœ๋ ฅ ๋‰ด๋Ÿฐ์„ ์‚ฌ์šฉํ•˜๋Š” MNIST ํ•„๊ธฐ ์ˆซ์ž ํŒจํ„ด ํ•™์Šต์—์„œ 91.63 %์˜ ์ธ์‹ ์ •ํ™•๋„๋ฅผ ์–ป์„ ์ˆ˜ ์žˆ๋‹ค. ๋‘ ๋ฒˆ์งธ๋กœ, ์šฐ๋ฆฌ๋Š” ์ง์ ‘ ํ”ผ๋“œ๋ฐฑ ์ •๋ ฌ ํ•™์Šต ๊ทœ์น™์„ ์‚ฌ์šฉํ•˜์—ฌ ์ง€๋„ ํ•™์Šต์„ ์œ„ํ•œ ํ•˜๋“œ์›จ์–ด ๊ธฐ๋ฐ˜ SNN์„ ์ œ์•ˆํ•œ๋‹ค. ์ˆœ๋ฐฉํ–ฅ ๊ฒฝ๋กœ์™€ ์—ญ๋ฐฉํ–ฅ ๊ฒฝ๋กœ์—์„œ ๋™์ผํ•œ ์‹œ๋ƒ…์Šค ๊ฐ€์ค‘์น˜๋ฅผ ๊ฐ€์งˆ ํ•„์š”๊ฐ€ ์—†๋Š” ์ง์ ‘ ํ”ผ๋“œ๋ฐฑ ์ •๋ ฌ ์•Œ๊ณ ๋ฆฌ์ฆ˜์œผ๋กœ ์ธํ•ด ANDํ˜• ์–ด๋ ˆ์ด ์•„ํ‚คํ…์ฒ˜๋Š” ํšจ์œจ์ ์ธ ์˜จ์นฉ ํ›ˆ๋ จ ์‹ ๊ฒฝ๋ง ์„ค๊ณ„์— ํ™œ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ANDํ˜• ์–ด๋ ˆ์ด ์•„ํ‚คํ…์ฒ˜์— ์ ํ•ฉํ•œ ํŽ„์Šค ๊ตฌ๋™ ๋ฐฉ์‹๋„ ์‹ ๊ฒฝ๋ง์—์„œ ์ง์ ‘ ํ”ผ๋“œ๋ฐฑ ์ •๋ ฌ ์•Œ๊ณ ๋ฆฌ์ฆ˜์„ ๊ตฌํ˜„ํ•˜๊ธฐ ์œ„ํ•ด ๊ณ ์•ˆ๋œ๋‹ค. ์‹œ์Šคํ…œ ์ˆ˜์ค€ ์‹œ๋ฎฌ๋ ˆ์ด์…˜์—์„œ ์ œ์•ˆ๋œ ํŽ„์Šค ๊ตฌ๋™ ๋ฐฉ์‹๊ณผ ์ปดํ“จํŒ… ์•„ํ‚คํ…์ฒ˜๋ฅผ ๊ธฐ๋ฐ˜์œผ๋กœ ํ•˜๋Š” MNIST ํŒจํ„ด ํ•™์Šต์—์„œ ์ตœ๋Œ€ 97.01%์˜ ์ธ์‹ ์ •ํ™•๋„๋ฅผ ์–ป์„ ์ˆ˜ ์žˆ๋‹ค. ๋˜ํ•œ, ์šฐ๋ฆฌ๋Š” ์ œ์•ˆ๋œ ์‹œ๋ƒ…์Šค ์–ด๋ ˆ์ด์™€ CMOS ํšŒ๋กœ์˜ ์ง‘์  ๊ณต์ • ๊ณผ์ •์„ ์ œ์•ˆํ•˜๊ณ  ์ด๋ฅผ ๊ฒ€์ฆํ•œ๋‹ค. ์ œ์•ˆํ•˜๋Š” ์ง‘์  ๊ณต์ • ๋ฐฉ๋ฒ•์€ ์‹œ๋ƒ…์Šค ์–ด๋ ˆ์ด์™€ CMOS ํšŒ๋กœ์˜ ๊ณต์ • ๊ณผ์ •์„ ๊ณต์œ ํ•จ์œผ๋กœ์จ ๋งˆ์Šคํฌ์™€ ๊ณต์ • ์ˆ˜๋ฅผ ์ค„์ผ ์ˆ˜ ์žˆ๋Š” ์žฅ์ ์ด ์žˆ๋‹ค. ์ œ์•ˆ๋œ ์ง‘์  ๊ณต์ • ๋ฐฉ๋ฒ•์€ ์ œ์•ˆํ•˜๋Š” ์‹œ๋ƒ…์Šค ์†Œ์ž์™€ CMOS์™€์˜ ์šฐ์ˆ˜ํ•œ ํ˜ธํ™˜์„ฑ์„ ๊ฒ€์ฆํ•  ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ, ํ•˜๋“œ์›จ์–ด ๊ธฐ๋ฐ˜ ์‹ ๊ฒฝ๋ง์„ ํšจ์œจ์ ์œผ๋กœ ๊ตฌํ˜„ํ•  ์ˆ˜ ์žˆ๋Š” ๋ฐฉ๋ฒ•๋ก ์„ ์ œ์‹œํ•œ๋‹ค๋Š” ์ ์—์„œ ์˜์˜๋ฅผ ๊ฐ–๋Š”๋‹ค.Abstract i Contents iv List of Figures viii List of Tables xxvi 1. Introduction 1 1.1 Neuromorphic computing 1 1.2 Hardware-based spiking neural network 5 1.3 Purpose of research 8 1.4 Dissertation outline 11 2. TFT-type AND flash memory array 12 2.1 Device structure and fabrication 12 2.2 Characteristics of the device 17 2.3 Measurement results as a synaptic device 22 2.4 Measurement results as a synaptic array 33 3. Hardware-based SNN for unsupervised learning 48 3.1 SNN using spike-timing-dependent plasticity (STDP) 48 3.2 Pulse scheme for STDP learning rule 54 3.3 MNIST pattern learning and classification 62 4. Hardware-based SNN for supervised learning 67 4.1 SNN using direct feedback alignment (DFA) 67 4.2 Pulse scheme for DFA learning rule 73 4.3 MNIST pattern learning and classification 81 5. Hardware implementation of neural networks 86 5.1 Integration of a synaptic array and CMOS circuits 86 5.2 Measurement results of a synaptic array 101 5.3 Measurement results of CMOS circuits 115 6. Conclusion 139 Appendix A. Neuron circuits to implement a hardware-based neural network using the STDP learning algorithm and the pulse scheme not including the inhibition pulses 142 Appendix B. Neuron circuits to implement a hardware-based neural network using the STDP learning algorithm and the pulse scheme including the inhibition pulses 158 Bibliography 172 Abstract in Korean 181 List of Publications 183๋ฐ•
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