Concertina: Squeezing in cache content to operate at near-threshold voltage

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Scaling supply voltage to values near the threshold voltage allows a dramatic decrease in the power consumption of processors; however, the lower the voltage, the higher the sensitivity to process variation, and, hence, the lower the reliability. Large SRAM structures, like the last-level cache (LLC), are extremely vulnerable to process variation because they are aggressively sized to satisfy high density requirements. In this paper, we propose Concertina, an LLC designed to enable reliable operation at low voltages with conventional SRAM cells. Based on the observation that for many applications the LLC contains large amounts of null data, Concertina compresses cache blocks in order that they can be allocated to cache entries with faulty cells, enabling use of 100 percent of the LLC capacity. To distribute blocks among cache entries, Concertina implements a compression- and fault-aware insertion/replacement policy that reduces the LLC miss rate. Concertina reaches the performance of an ideal system implementing an LLC that does not suffer from parameter variation with a modest storage overhead. Specifically, performance degrades by less than 2 percent, even when using small SRAM cells, which implies over 90 percent of cache entries having defective cells, and this represents a notable improvement on previously proposed techniques.Peer ReviewedPostprint (author's final draft

Embracing Visual Experience and Data Knowledge: Efficient Embedded Memory Design for Big Videos and Deep Learning

Energy efficient memory designs are becoming increasingly important, especially for applications related to mobile video technology and machine learning. The growing popularity of smart phones, tablets and other mobile devices has created an exponential demand for video applications in today?s society. When mobile devices display video, the embedded video memory within the device consumes a large amount of the total system power. This issue has created the need to introduce power-quality tradeoff techniques for enabling good quality video output, while simultaneously enabling power consumption reduction. Similarly, power efficiency issues have arisen within the area of machine learning, especially with applications requiring large and fast computation, such as neural networks. Using the accumulated data knowledge from various machine learning applications, there is now the potential to create more intelligent memory with the capability for optimized trade-off between energy efficiency, area overhead, and classification accuracy on the learning systems. In this dissertation, a review of recently completed works involving video and machine learning memories will be covered. Based on the collected results from a variety of different methods, including: subjective trials, discovered data-mining patterns, software simulations, and hardware power and performance tests, the presented memories provide novel ways to significantly enhance power efficiency for future memory devices. An overview of related works, especially the relevant state-of-the-art research, will be referenced for comparison in order to produce memory design methodologies that exhibit optimal quality, low implementation overhead, and maximum power efficiency.National Science FoundationND EPSCoRCenter for Computationally Assisted Science and Technology (CCAST

Exploiting Natural On-chip Redundancy for Energy Efficient Memory and Computing

Power density is currently the primary design constraint across most computing segments and the main performance limiting factor. For years, industry has kept power density constant, while increasing frequency, lowering transistors supply (Vdd) and threshold (Vth) voltages. However, Vth scaling has stopped because leakage current is exponentially related to it. Transistor count and integration density keep doubling every process generation (Moore’s Law), but the power budget caps the amount of hardware that can be active at the same time, leading to dark silicon. With each new generation, there are more resources available, but we cannot fully exploit their performance potential. In the last years, different research trends have explored how to cope with dark silicon and unlock the energy efficiency of the chips, including Near-Threshold voltage Computing (NTC) and approximate computing. NTC aggressively lowers Vdd to values near Vth. This allows a substantial reduction in power, as dynamic power scales quadratically with supply voltage. The resultant power reduction could be used to activate more chip resources and potentially achieve performance improvements. Unfortunately, Vdd scaling is limited by the tight functionality margins of on-chip SRAM transistors. When scaling Vdd down to values near-threshold, manufacture-induced parameter variations affect the functionality of SRAM cells, which eventually become not reliable. A large amount of emerging applications, on the other hand, features an intrinsic error-resilience property, tolerating a certain amount of noise. In this context, approximate computing takes advantage of this observation and exploits the gap between the level of accuracy required by the application and the level of accuracy given by the computation, providing that reducing the accuracy translates into an energy gain. However, deciding which instructions and data and which techniques are best suited for approximation still poses a major challenge. This dissertation contributes in these two directions. First, it proposes a new approach to mitigate the impact of SRAM failures due to parameter variation for effective operation at ultra-low voltages. We identify two levels of natural on-chip redundancy: cache level and content level. The first arises because of the replication of blocks in multi-level cache hierarchies. We exploit this redundancy with a cache management policy that allocates blocks to entries taking into account the nature of the cache entry and the use pattern of the block. This policy obtains performance improvements between 2% and 34%, with respect to block disabling, a technique with similar complexity, incurring no additional storage overhead. The latter (content level redundancy) arises because of the redundancy of data in real world applications. We exploit this redundancy compressing cache blocks to fit them in partially functional cache entries. At the cost of a slight overhead increase, we can obtain performance within 2% of that obtained when the cache is built with fault-free cells, even if more than 90% of the cache entries have at least a faulty cell. Then, we analyze how the intrinsic noise tolerance of emerging applications can be exploited to design an approximate Instruction Set Architecture (ISA). Exploiting the ISA redundancy, we explore a set of techniques to approximate the execution of instructions across a set of emerging applications, pointing out the potential of reducing the complexity of the ISA, and the trade-offs of the approach. In a proof-of-concept implementation, the ISA is shrunk in two dimensions: Breadth (i.e., simplifying instructions) and Depth (i.e., dropping instructions). This proof-of-concept shows that energy can be reduced on average 20.6% at around 14.9% accuracy loss

Reliability in the face of variability in nanometer embedded memories

In this thesis, we have investigated the impact of parametric variations on the behaviour of one performance-critical processor structure - embedded memories. As variations manifest as a spread in power and performance, as a first step, we propose a novel modeling methodology that helps evaluate the impact of circuit-level optimizations on architecture-level design choices. Choices made at the design-stage ensure conflicting requirements from higher-levels are decoupled. We then complement such design-time optimizations with a runtime mechanism that takes advantage of adaptive body-biasing to lower power whilst improving performance in the presence of variability. Our proposal uses a novel fully-digital variation tracking hardware using embedded DRAM (eDRAM) cells to monitor run-time changes in cache latency and leakage. A special fine-grain body-bias generator uses the measurements to generate an optimal body-bias that is needed to meet the required yield targets. A novel variation-tolerant and soft-error hardened eDRAM cell is also proposed as an alternate candidate for replacing existing SRAM-based designs in latency critical memory structures. In the ultra low-power domain where reliable operation is limited by the minimum voltage of operation (Vddmin), we analyse the impact of failures on cache functional margin and functional yield. Towards this end, we have developed a fully automated tool (INFORMER) capable of estimating memory-wide metrics such as power, performance and yield accurately and rapidly. Using the developed tool, we then evaluate the #effectiveness of a new class of hybrid techniques in improving cache yield through failure prevention and correction. Having a holistic perspective of memory-wide metrics helps us arrive at design-choices optimized simultaneously for multiple metrics needed for maintaining lifetime requirements

Cache designs for reliable hybrid high and ultra-low voltage operation

Increasing demand for implementing highly-miniaturized battery-powered ultra-low-cost systems (e.g., below 1 USD) in emerging applications such as body, urban life and environment monitoring, etc., has introduced many challenges in the chip design. Such applications require high performance occasionally, but very little energy consumption during most of the time in order to extend battery lifetime. In addition, they require real-time guarantees. The most suitable technological solution for those devices consists of using hybrid processors able to operate at: (i) high voltage to provide high performance and (ii) near-/sub-threshold (NST) voltage to provide ultra-low energy consumption. However, the most efficient SRAM memories for each voltage level differ and it is mandatory trading off different SRAM designs, especially in cache memories, which occupy most of the processor¿s area. In this Thesis, we analyze the performance/power tradeoffs involved in the design of SRAM L1 caches for reliable hybrid high and NST Vcc operation from a microarchitectural perspective. We develop new, simple, single-Vcc domain hybrid cache architectures and data management mechanisms that satisfy all stringent needs of our target market. Proposed solutions are shown to have high energy efficiency with negligible impact on average performance while maintaining strong performance guarantees as required for our target market