Supercapacitor assisted LDO (SCALDO) techniquean extra low frequency design approach to high efficiency DC-DC converters and how it compares with the classical switched capacitor converters

Supercapacitor assisted low dropout regulators (SCALDO) were proposed as an alternative design approach to DC-DC converters, where the supercapacitor circulation frequency (switching frequency) is in the order of few Hz to few 10s of Hz, with an output stage based on a low dropout regulator stage. For converters such as 12–5V, 5–3.3V and 5–1.5V, the technique provides efficiency improvement factors of 2, 1.33 and 3 respectively, in compared to linear converters with same input-output combinations. In a 5–1.5V SCALDO regulator, using thin profile supercapacitors in the range of fractional farads to few farads, this translates to an approximate end to end efficiency of near 90%. However, there were concerns that this patented technique is merely a variation of well-known switched capacitor (charge pump) converters. This paper is aimed at providing a broad overview of the capability of SCALDO technique with generalized theory, indicating its capabilities and limitations, and comparing the practical performance with a typical switched capacitor converter of similar current capability

A battery-less, self-sustaining RF energy harvesting circuit with TFETs for µW power applications

This paper proposes a Tunnel FET (TFET) power management circuit for RF energy harvesting applications. In contrast with conventional MOSFET technologies, the improved electrical characteristics of TFETs promise a better behavior in the process of rectification and conversion at ultra-low power (µW) and voltage (sub-0.25 V) levels. RF powered systems can not only benefit from TFETs in front-end rectifiers by harvesting the surrounding energy at levels where conventional technologies cannot operate but also in the minimization of energy required by the power management circuit. In this work we present an energy harvesting circuit for RF sources designed with TFETs. The TFET controller emulates an adequate impedance at the output of the rectifier in order to allow maximum transfer of power from the RF source to the input of the boost converter. The output load is activated once the output capacitor reaches a voltage value of 0.5 V. The results show an efficiency boost of 89 % for an output load consuming 1 µW with an available RF power of -25 dBm.Postprint (published version

Dynamic simulation of indirect air conditioning systems with optimized computational time

Peer ReviewedPostprint (published version

Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications

In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption. Compared with conventional thermionic technologies, the improved electrical characteristics of TFET devices are expected to increase the power conversion efficiency of front-end charge pumps and rectifiers powered at sub-µW power levels. However, under reverse bias conditions the TFET device presents particular electrical characteristics due to its different carrier injection mechanism. In this paper, it is shown that reverse losses in TFET-based circuits can be attenuated by changing the gate-to-source voltage of reverse-biased TFETs. Therefore, in order to take full advantage of the TFETs in front-end energy harvesting circuits, different circuit approaches are required. In this paper, we propose and discuss different topologies for TFET-based charge pumps and rectifiers for energy harvesting applications.Peer ReviewedPostprint (author's final draft

A 1.1 nW Energy-Harvesting System with 544 pW Quiescent Power for Next-Generation Implants

This paper presents a nW power management unit (PMU) for an autonomous wireless sensor that sustains itself by harvesting energy from the endocochlear potential (EP), the 70-100 mV electrochemical bio-potential inside the mammalian ear. Due to the anatomical constraints inside the inner ear, the total extractable power from the EP is limited close to 1.1-6.25 nW. A nW boost converter is used to increase the input voltage (30-55 mV) to a higher voltage (0.8-1.1 V) usable by CMOS circuits in the sensor. A pW charge pump circuit is used to minimize the leakage in the boost converter. Furthermore, ultralow-power control circuits consisting of digital implementations of input impedance adjustment circuits and zero current switching circuits along with Timer and Reference circuits keep the quiescent power of the PMU down to 544 pW. The designed boost converter achieves a peak power conversion efficiency of 56%. The PMU can sustain itself, and a duty-cyled ultralow-power load while extracting power from the EP of a live guinea pig. The PMU circuits have been implemented on a 0.18- μm CMOS process.Semiconductor Research Corporation. Focus Center for Circuit and System Solutions (C2S2)Interconnect Focus Center (United States. Defense Advanced Research Projects Agency and Semiconductor Research Corporation)National Institutes of Health (U.S.) (Grant K08 DC010419)National Institutes of Health (U.S.) (Grant T32 DC00038)Bertarelli Foundatio

High Efficiency Power Management Unit for Implantable Optical-Electrical Stimulators

Battery-less active implantable devices are of interest because they offer longer life span and eliminate costly battery replacement surgical interventions. This is possible as a result of advances in inductive power transfer and development of power management circuits to maximize the overall power transfer and provide various voltage levels for multi-functional implantable devices. Rehabilitation therapy using optical stimulation of genetically modified peripheral neurons requires high current loads. Standard rectification topologies are inefficient and have associated voltage drops unsuited for miniaturized implants. This paper presents an integrated power management unit (PMU) for an optical-electrical stimulator to be used in the treatment of motor neurone disease. It includes a power-efficient regulating rectifier with a novel body biased high-speed comparator providing 3.3 V for the operation of the stimulator, a 3-stage latch-up charge pump with 12 V output for the input stage of the optical-electrical stimulator, and 1.8 V for digital control logic. The chip was fabricated in a 0.18 μm CMOS process. Measured results show that for a regulated output of 3.3 V delivering 30.3 mW power, the peak power conversion efficiency is 84.2% at 6.78 MHz inductive link tunable frequency reducing to 70.3% at 13.56 MHz. The charge pump with on chip capacitors has 90.9% measured voltage conversion efficiency

Developing vanadium redox flow technology on a 9-kW 26-kWh industrial scale test facility: Design review and early experiments

Redox Flow Batteries (RFBs) have a strong potential for future stationary storage, in view of the rapid expansion of renewable energy sources and smart grids. Their development and future success largely depend on the research on new materials, namely electrolytic solutions, membranes and electrodes, which is typically conduced on small single cells. A vast literature on these topics already exists. However, also the technological development plays a fundamental role in view of the successful application of RFBs in large plants. Despite that, very little research is reported in literature on the technology of large RFB systems. This paper presents the design, construction and early operation of a vanadium redox flow battery test facility of industrial size, dubbed IS-VRFB, where such technologies are developed and tested. In early experiments a peak power of 8.9 kW has been achieved with a stack specific power of 77Wkg−1. The maximum tested current density of 635 mA cm−2 has been reached with a cell voltage of 0.5 V, indicating that higher values can be obtained. The test facility is ready to be complemented with advanced diagnostic devices, including multichannel electrochemical impedance spectroscopy for studying aging and discrepancies in the cell behaviors