DEVELOPMENT OF AN UWB RADAR SYSTEM

An ultra-wideband radar system is built at the University of Tennessee with the goal to develop a ground penetrating radar (GPR). The radar is required to transmit and receive a very narrow pulse signal in the time domain. The bistatic radar transmits a pulse through an ultrawide spiral antenna and receives the pulse by a similar antenna. Direct sampling is used to improve the performance of the impulse radar allowing up to 1.5 GHz of bandwidth to be used for signal processing and target detection with high resolution. Using direct sampling offers a less complex system design than traditional lower sample rate, super-heterodyne systems using continuous wave or step frequency methods while offering faster results than conventional equivalent time sampling techniques that require multiple data sets and significant post-processing. These two points are particularly important for a system that may be used in the field in potentially dangerous environments. Direct sampling radar systems, while still frequency limited, are continually improving their upper frequencies boundaries due to more power efficient, higher sampling rate analog to digital converters (ADCs) which relates directly to better subsurface resolution for potential target detection

Multi-band OFDM UWB receiver with narrowband interference suppression

A multi band orthogonal frequency division multiplexing (MB-OFDM) compatible ultra wideband (UWB) receiver with narrowband interference (NBI) suppression capability is presented. The average transmit power of UWB system is limited to -41.3 dBm/MHz in order to not interfere existing narrowband systems. Moreover, it must operate even in the presence of unintentional radiation of FCC Class-B compatible devices. If this unintentional radiation resides in the UWB band, it can jam the communication. Since removing the interference in digital domain requires higher dynamic range of analog front-end than removing it in analog domain, a programmable analog notch filter is used to relax the receiver requirements in the presence of NBI. The baseband filter is placed before the variable gain amplifier (VGA) in order to reduce the signal swing at the VGA input. The frequency hopping period of MB-OFDM puts a lower limit on the settling time of the filter, which is inverse proportional to notch bandwidth. However, notch bandwidth should be low enough not to attenuate the adjacent OFDM tones. Since these requirements are contradictory, optimization is needed to maximize overall performance. Two different NBI suppression schemes are tested. In the first scheme, the notch filter is operating for all sub-bands. In the second scheme, the notch filter is turned on during the sub-band affected by NBI. Simulation results indicate that the UWB system with the first and the second suppression schemes can handle up to 6 dB and 14 dB more NBI power, respectively. The results of this work are not limited to MB-OFDM UWB system, and can be applied to other frequency hopping systems

A development study for a short range, low capacity digital microwave link

Includes bibliographical references.A specific request for development of a short-range, low capacity digital microwave transmission system has been received from the South African Dept. Posts and Telecommunications. The aim of this project is to initiate development work by determining the optimum system configuration and modulation technique to meet the design specifications. In addition, it is proposed to develop and construct an I.F. modulator/demodulator module using which simulation tests chosen modulation application may be performed in order to assess the scheme's feasibi1ity in this specific application

A Low-Power BFSK/OOK Transmitter for Wireless Sensors

In recent years, significant improvements in semiconductor technology have allowed consistent development of wireless chipsets in terms of functionality and form factor. This has opened up a broad range of applications for implantable wireless sensors and telemetry devices in multiple categories, such as military, industrial, and medical uses. The nature of these applications often requires the wireless sensors to be low-weight and energy-efficient to achieve long battery life. Among the various functions of these sensors, the communication block, used to transmit the gathered data, is typically the most power-hungry block. In typical wireless sensor networks, transmission range is below 10 meters and required radiated power is below 1 milliwatt. In such cases, power consumption of the frequency-synthesis circuits prior to the power amplifier of the transmitter becomes significant. Reducing this power consumption is currently the focus of various research endeavors. A popular method of achieving this goal is using a direct-modulation transmitter where the generated carrier is directly modulated with baseband data using simple modulation schemes. Among the different variations of direct-modulation transmitters, transmitters using unlocked digitally-controlled oscillators and transmitters with injection or resonator-locked oscillators are widely investigated because of their simple structure. These transmitters can achieve low-power and stable operation either with the help of recalibration or by sacrificing tuning capability. In contrast, phase-locked-loop-based (PLL) transmitters are less researched. The PLL uses a feedback loop to lock the carrier to a reference frequency with a programmable ratio and thus achieves good frequency stability and convenient tunability. This work focuses on PLL-based transmitters. The initial goal of this work is to reduce the power consumption of the oscillator and frequency divider, the two most power-consuming blocks in a PLL. Novel topologies for these two blocks are proposed which achieve ultra-low-power operation. Along with measured performance, mathematical analysis to derive rule-of-thumb design approaches are presented. Finally, the full transmitter is implemented using these blocks in a 130 nanometer CMOS process and is successfully tested for low-power operation

Techniques for high-performance digital frequency synthesis and phase control

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.Includes bibliographical references (p. 183-190).This thesis presents a 3.6-GHz, 500-kHz bandwidth digital [delta][sigma] frequency synthesizer architecture that leverages a recently invented noise-shaping time-to-digital converter (TDC) and an all-digital quantization noise cancellation technique to achieve excellent in-band and out-of-band phase noise, respectively. In addition, a passive digital-to-analog converter (DAC) structure is proposed as an efficient interface between the digital loop filter and a conventional hybrid voltage-controlled oscillator (VCO) to create a digitally-controlled oscillator (DCO). An asynchronous divider structure is presented which lowers the required TDC range and avoids the divide-value-dependent delay variation. The prototype is implemented in a 0.13-am CMOS process and its active area occupies 0.95 mm². Operating under 1.5 V, the core parts, excluding the VCO output buffer, dissipate 26 mA. Measured phase noise at 3.67 GHz achieves -108 dBc/Hz and -150 dBc/Hz at 400 kHz and 20 MHz, respectively. Integrated phase noise at this carrier frequency yields 204 fs of jitter (measured from 1 kHz to 40 MHz). In addition, a 3.2-Gb/s delay-locked loop (DLL) in a 0.18-[mu]m CMOS for chip-tochip communications is presented. By leveraging the fractional-N synthesizer technique, this architecture provides a digitally-controlled delay adjustment with a fine resolution and infinite range. The provided delay resolution is less sensitive to the process, voltage, and temperature variations than conventional techniques. A new [delta][sigma] modulator enables a compact and low-power implementation of this architecture. A simple bang-bang detector is used for phase detection. The prototype operates at a 1.8-V supply voltage with a current consumption of 55 mA. The phase resolution and differential rms clock jitter are 1.4 degrees and 3.6 ps, respectively.by Chun-Ming Hsu.Ph.D

RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

A high-frequency quad-modulus prescaler for fractional-N frequency synthesizer

Master'sMASTER OF ENGINEERIN

Design and Analysis of a Discrete, PCB-Level Low-Power, Microwave Cross-Coupled Differential LC Voltage-Controlled Oscillator

Radio Frequency (RF) and Microwave devices are typically implemented in Integrated Circuit (IC) form to minimize parasitics, increase precision and tolerances, and minimize size. Although IC fabrication for students and independent engineers is cost-prohibitive, an abundance of low-cost, easily accessible printed circuit board (PCB) and electronic component manufacturers allows affordable PCB fabrication. While nearly all microwave voltage-controlled oscillator (VCO) designs are IC-based, this study presents a discrete PCB-level cross-coupled, differential LC VCO to demonstrate this more affordable and accessible approach. This thesis presents a 65 mW, discrete component VCO PCB with industry-comparable RF performance. A phase noise of -103.7 dBc/Hz is simulated at a 100 kHz offset from a 4.05 GHz carrier. This VCO achieves a 532 MHz (13.25%) tuning bandwidth. A figure of merit, FOMP, [1] value of -177.7 dB (includes phase noise and power consumption) is calculated at 4.05 GHz. This surpasses the performance of an industry standard VCO (HMC430LPx, Analog Devices), -176.5 dB, and four other commercially available VCOs. Furthermore, this study presents novel discrete design implementations to minimize both power consumption and capacitive loading effects, while optimizing phase noise. Finally, this project serves as a reference for analyzing and implementing low-level, complex RF and Microwave circuits on a PCB accessible to all students and independent engineers

Radio-frequency integrated-circuit design for CMOS single-chip UWB systems

Low cost, a high-integrated capability, and low-power consumption are the basic requirements for ultra wide band (UWB) system design in order for the system to be adopted in various commercial electronic devices in the near future. Thus, the highly integrated transceiver is trended to be manufactured by companies using the latest silicon based complimentary metal-oxide-silicon (CMOS) processes. In this dissertation, several new structural designs are proposed, which provide solutions for some crucial RF blocks in CMOS for UWB for commercial applications. In this dissertation, there is a discussion of the development, as well as an illustration, of a fully-integrated ultra-broadband transmit/receive (T/R) switch which uses nMOS transistors with deep n-well in a standard 0.18-μm CMOS process. The new CMOS T/R switch exploits patterned-ground-shield on-chip inductors together with MOSFET’s parasitic capacitances in order to synthesize artificial transmission lines which result in low insertion loss over an extremely wide bandwidth. Within DC-10 GHz, 10-18 GHz, and 18-20 GHz, the developed CMOS T/R switch exhibits insertion loss of less than 0.7, 1.0 and 2.5 dB and isolation between 32-60 dB, 25-32 dB, and 25-27 dB, respectively. The measured 1-dB power compression point and input third-order intercept point reach as high as 26.2 and 41 dBm, respectively. Further, there is a discussion and demonstration of a tunable Carrier-based Time-gated UWB transmitter in this dissertation which uses a broadband multiplier, a novel fully integrated single pole single throw (SPST) switch designed by the CMOS process, where a tunable instantaneous bandwidth from 500 MHz to 4 GHz is exhibited by adjusting the width of the base band impulses in time domain. The SPST switch utilizes the synthetic transmission line concept and multiple reflections technique in order to realize a flat insertion loss less than 1.5 dB from 3.1 GHz to 10.6 GHz and an extremely high isolation of more than 45 dB within this frequency range. A fully integrated complementary LC voltage control oscillator (VCO), designed with a tunable buffer, operates from 4.6 GHz to 5.9 GHz. The measurement results demonstrate that the integrated VCO has a very low phase noise of –117 dBc/ Hz at 1 MHz offset. The fully integrated VCO achieves a very high figure of merit (FOM) of 183.5 using standard CMOS process while consuming 4 mA DC current