Spacecraft Microminiature PAM Decommutator System

Operation and testing of spacecraft microminiature PAM decommutator syste

Multirate cascaded discrete-time low-pass ΔΣ modulator for GSM/Bluetooth/UMTS

This paper shows that multirate processing in a cascaded discrete-time ΔΣ modulator allows to reduce the power consumption by up to 35%. Multirate processing is possible in a discrete-time ΔΣ modulator by its adaptibility with the sampling frequency. The power reduction can be achieved by relaxing the sampling speed of the first stage and increasing it appropriately in the second stage. Furthermore, a cascaded ΔΣ modulator enables the power efficient implementation of multiple communication standards.@The advantages of multirate cascaded ΔΣ modulators are demonstrated by comparing the performance of single-rate and multirate implementations using behavioral-level and circuit-level simulations. This analysis has been further validated with the design of a multirate cascaded triple-mode discrete-time ΔΣ modulator. A 2-1 multirate low-pass cascade, with a sampling frequency of 80 MHz in the first stage and 320 MHz in the second stage, meets the requirements for UMTS. The first stage alone is suitable for digitizing Bluetooth and GSM with a sampling frequency of 90 and 50 MHz respectively. This multimode ΔΣ modulator is implemented in a 1.2 V 90 nm CMOS technology with a core area of 0.076 mm2. Measurement results show a dynamic range of 66/77/85 dB for UMTS/ Bluetooth/GSM with a power consumption of 6.8/3.7/3.4 mW. This results in an energy per conversion step of 1.2/0.74/2.86 pJ

Cross-Coupled Charge Pump Synthesis Based on Full Transistor-Level

This paper presents utility for the design of the cross-coupled charge pump, which is used for supplying peripherals with low current consumption on the chip, as the EEPROM or FLASH memories. The article summarizes the knowledge in the field of the theoretical and practical analysis of the cross-coupled charge pump (design relationships and their connection with the pump parameters, as the threshold voltage, power supply voltage, clock signal frequency, etc.) that are applicated in the design algorithm. Optimal MOSFETs sizes (W, L) were find based on the construct of the time response characteristics of the pump sub-block and finding of the maximal voltage increase in the active interval of the clock signal and minimizing of the pump losses, as the switch reverse current, inverter cross current, etc. Synthesis process includes the design of the pump functional blocks with dominant real properties, which are described based on BSIM equations for long channel MOSFET. The pump stage complex model is applicated for estimation of the number of pump stages via state-space model description and using of the interpolation polynomial functions in the algorithm. It involves the construction of the time response characteristic due to the state variables and prediction of the number of the pump stages for the next cycle based on the previous data. Optimization of the pump area is based on the minimizing of the main capacitor in each of the pump stages (number of the pump stages must be increased to obtain the desired output voltage value.) Access is designed to stress the maximum pump voltage efficiency. The whole procedure is summarized in the practical example, in which the solution is shown both in terms of maximal voltage efficiency and the optimal pump area on a chip with respect to the clock signal frequency. Added functions of the design environment are explained, inclusive of the designed pump netlist generating for professional design environment Mentor Graphics including the real models of components that are available in library MGC Design Kit. The procedure gives designer credible results without long timeconsuming optimization process. In addition, the complex model allows the inclusion effects of higher-levels

An 8-Bit Analog-to-Digital Converter for Battery Operated Wireless Sensor Nodes

Wireless sensing networks (WSNs) collect analog information transduced into the form of a voltage or current. This data is typically converted into a digital representation of the value and transmitted wirelessly using various modulation techniques. As the available power and size is limited for wireless sensor nodes in many applications, a medium resolution Analog-to-Digital Converter (ADC) is proposed to convert a sensed voltage with moderate speeds to lower power consumption. Specifications also include a rail-to-rail input range and minimized errors associated with offset, gain, differential nonlinearity, and integral nonlinearity. To achieve these specifications, an 8-bit successive approximation register ADC is developed which has a conversion time of nine clock cycles. This ADC features a charge scaling array included to achieve minimized power consumption and area by reducing unit capacitance in the digital-to-analog converter. Furthermore, a latched comparator provides fast decisions utilizing positive feedback. The ADC was designed and simulated using Cadence Virtuoso with parasitic extraction over expected operating temperature range of 0 – 85°C. The design was fabricated using TSMC’s 65 nanometer RF GP process and tested on a printed circuit board to verify design specifications. The measured results for the device show an offset and gain error of +7 LSB and 31.1 LSB, respectively, and a DNL range of -0.9 LSB to +0.8 LSB and an INL range of approximately -4.6 LSB to +12 LSB. The INL is much improved in regard to the application of the temperature sensor. The INL for this region of interest is from -3.5 LSB to +2.8 LSB

Clock-Feedthrough Compensation in MOS Sample-and-Hold Circuits

All MOS sample-and-hold circuits suffer to a greater or lesser extent from clock-feedthrough (CLFT), also called charge-injection. During the transition from sample to hold mode, charge is transferred from an MOS transistor switch onto the hold capacitor, thus the name charge-injection. This error can lead to considerable voltage change across the capacitor, and predicting the extent of the induced error potentials is important to circuit designers. Previous studies have shown a considerable dependency of CLFT on signal voltage, circuit impedances, clock amplitude and clock fall-time. The focus of this work was on the signal dependency of the CLFT error and on the CLFT induced signal distortion in open-loop sample-and-hold circuits. CLFT was found to have a strongly non-linear, signal dependent, component, which may cause considerable distortion of the sampled signal. The parameters influencing this distortion were established. It was discovered that distortion could be reduced by more than 20dB through careful adjustment of the clock fall-rate. Several circuit solutions that can help reduce the level of distortion arising from CLFT are presented. These circuits can also reduce the absolute level of CLFT. Simulations showed their effectiveness, which was also proven in silicon. The CLFT reduction methods used in these circuits are easily transferable to other switched-capacitor circuits and are suitable for applications where space is at a premium (as, for example, in analogue neural networks). A new saturation mode contribution to CLFT was found. It is shown to give rise to increased CLFT under high injection conditions

The BLIXER, a Wideband Balun-LNA-I/Q-Mixer Topology

This paper proposes to merge an I/Q current-commutating mixer with a noise-canceling balun-LNA. To realize a high bandwidth, the real part of the impedance of all RF nodes is kept low, and the voltage gain is not created at RF but in baseband where capacitive loading is no problem. Thus a high RF bandwidth is achieved without using inductors for bandwidth extension. By using an I/Q mixer with 25% duty-cycle LO waveform the output IF currents have also 25% duty-cycle, causing 2 times smaller DC-voltage drop after IF filtering. This allows for a 2 times increase in the impedance level of the IF filter, rendering more voltage gain for the same supply headroom. The implemented balun-LNA-I/Q-mixer topology achieves > 18 dB conversion gain, a flat noise figure < 5.5 dB from 500 MHz to 7 GHz, IIP2 = +20 dBm and IIP3 = -3 dBm. The core circuit consumes only 16 mW from a 1.2 V supply voltage and occupies less than 0.01 mm2 in 65 nm CMOS

Electronic circuits and systems: A compilation

Technological information is presented electronic circuits and systems which have potential utility outside the aerospace community. Topics discussed include circuit components such as filters, converters, and integrators, circuits designed for use with specific equipment or systems, and circuits designed primarily for use with optical equipment or displays